489results about How to "Suppress stress" patented technology

In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such thatthe direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel tothe direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.

A display apparatus with an active matrix display panel which can suppress gate stress to prevent a degradation of the display quality. Specified at least one pixel section having a light emitting element to driven for light emission in one row is supplied with a data pulse indicative of a first gate voltage of a thin film transistor upon supply of a display scanning pulse. Subsequently, each pixel in the one row is supplied with a reset scanning pulse, and when supplying a reset scanning pulse, the at least one pixel section is supplied with a reset pulse indicative of a second gate voltage of the thin film transistor for making the polarity of agate-to-source voltage or gate-to-drain voltage of the thin film transistor reverse to that during light emission driving.

A new anode configuration (20) is proposed for a lithium microbattery (10). The anode (20) preferably consists of nanotubes or of nanowires (24) such that the empty space (26) left between the different components (24) provides compensation for the inherent swelling upon discharging the microbattery (10). With the absence of stresses on the electrolyte (18), the lifetime of the battery (10) may be increased.

A control system for a power transmission unit of a vehicle transmitting power outputted from a prime mover, comprising: a resonance detecting / predicting device for detecting or predicting a generation of a resonance of the power transmission unit resulting from a power transmission; a driving condition detecting device for detecting a driving condition of a vehicle in case the generation of a resonance is detected or predicted by the resonance detecting / predicting device; and a resonance dampening control selecting device for changing contents of a control for dampening the detected or predicted resonance on the basis of the driving condition of the vehicle detected by the driving condition detecting device.

In a virtual image display device, direction adjustment of an image optical axis, i.e., angle adjustment of a direction of eyes of an observer can be performed by providing a cushion member or adjusting an amount of shift between an image display unit and a projection system, and thereby, strain on eyes of an observer in use may be reduced. Even when the virtual image display device is used over a long period, for example, stress on the observer may be suppressed.

A DNA encoding 20K hGH is connected directly to a gene encoding Escherichia coli OppA protein secretion signal, or a modified form thereof, and a DNA encoding signal peptidase 1 to construct a recombinant plasmid, E. coli is transformed by said plasmid and cells of the resulting E. coli transformant strain are cultured for secretory production of the 20K hGH in the E. coli periplasm. This method enables efficient secretory production of 20K hGH and easy isolation and purification of 20K hGH from the periplasm fraction because the level of impure proteins in the E. coli periplasm is low.

A vehicle control apparatus that for automatic steering control that reduces occupant discomfort and stress is provided. A lane width of a subject lane and a current in-lane ratio are detected. If an off-lane obstacle which may place stress on the occupant is present within a prescribed area, a relative position between each off-lane obstacle and the vehicle is determined. A target in-lane ratio is determined based on the relative position. Specifically, when the off-lane obstacles are present on both the left and right sides of the subject lane, the target in-lane ratio is such that lateral distances to both off-lane obstacles are equal. When the off-lane obstacle is present on only one of either the left or right of the subject lane, the target in-lane ratio is set such that a lateral position away from the off-lane obstacle by a lateral distance set in advance is the target lateral position.

A display unit of the present disclosure includes: a first plate-like member including a display device; a second plate-like member including a drive circuit, the drive circuit configured to control the display device; and one or two or more wiring sections having flexibility, the wiring sections configured to connect the first plate-like member and the second plate-like member to each other, in which a curvature of the second plate-like member is larger than 0 and equal to or smaller than a curvature of the first plate-like member.

The invention provides a high carbon high silicon martensite stainless steel billet. The steel billet is characterized by comprising the following components by weight percent: 0.41-0.47% of C, 2.80-3.20% of Si, 0.50-0.80% of Mn, 8.50-9.20% of Cr, 0.30% or less of Ni, 0.028% or less of P, 0.005% or less of S, 0.20% or less of W, 0.20% or less of Mo, 0.15% or less of V, 0.015% or less of Nb, 0.015% or less of Ti, 0.010% or less of Al and the balance Fe and inevitable impurities. The invention also provides a preparation method of the high carbon high silicon martensite stainless steel billet. The method comprises the following steps: performing primary smelting with an electric arc furnace (EAF), performing argon-oxygen decarburization (AOD) smelting, refining with a low frequency (LF) furnace, performing continuous casting, annealing and rolling. The method of the invention has simple operation, can stably control the quality of the continuous casting billet, completely suppresse cracks, overcome the defect of concentration of stress and increase the casting yield and quality stability of the martensite stainless steel.

A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

Disclosed are conductive particles wherein stress can be suppressed by improving spreadability while maintaining high hardness (cracks hardly occur even when the particles are crushed during the connection). The conductive particles assure sufficient electrical connection reliability not only for ITO substrates but also for IZO substrates. An anisotropic conductive film comprising the conductive particles, a joined body comprising the anisotropic conductive film, and a connecting method using the anisotropic conductive film are also disclosed. Each of the conductive particles comprises a polymer fine particle and a conductive layer formed on the surface of the polymer fine particle, and is characterized in that the outermost shell of the conductive layer is composed of a nickel-palladium alloy layer.

A rotor is provided with a rotor core, a magnet inserted into the rotor core and a filling portion arranged in a space between the rotor core and the magnet. The space between the rotor core and a radially outer side surface of the magnet has a uniform width in a central portion (portion (A)) with respect to a width direction (of arrow (DR4)) of the magnet. A width of the space in an end portion (portion (B)) with respect to the width direction (of arrow (DR4)) of the magnet is larger than that of the space in the portion (A).

An inductance element (1) comprises a core (2) having a multilayer body (6) composed of magnetic alloy thin ribbons (5) and an insulating coating layer (7) which covers the peripheral surface of the multilayer body without being bonded thereto, and a coil (4) wound around the core (2). The magnetic alloy thin ribbons (5) are stacked in a non-adhered state or with a flexible insulating adhesive layer therebetween. Having such a structure, the inductance element can stably attain good characteristics even when it is small-sized or made short.

An electrode for a non-aqueous electrolyte secondary battery 6 according to the present invention includes: a current collector 3; a first active material layer 2 formed on the current collector 3; and a second active material layer 5 provided on the first active material layer 2, the second active material layer 5 including a plurality of active material particles 4. The plurality of active material particles 4 is mainly of a chemical composition represented as SiOx(0≦x<1.2). The first active material layer 2 is mainly of a chemical composition represented as SiOy(1.0≦y<2.0, y>x). The area in which the first active material layer 2 is in contact with the plurality of active material particles 4 is smaller than the area in which the current collector 3 is in contact with the first active material layer 2.

A light bulb shaped lamp according to the present invention includes: a hollow globe; an LED module including a base platform and an LED chip mounted on the base platform, the LED module being provided in the globe; a lead wire for supplying power to the LED module; and a stem extending toward the interior of the globe, in which the base platform is directly fixed to the stem.

A system or apparatus and method for retrieving cable from water during marine operations is provided that reduces damage to the cable from pulling forces during the retrieval. A pulling device distributes the forces and stresses all along the cable components. In one embodiment, the pulling drive comprises a pulling drum powered by a clutching system or by a hydraulic torque conversion system set to slip or stall at a selectable force value. The apparatus may use a see-saw action to maintain the forces below damaging levels. The system may be adapted for deploying cable in marine operations as well.

An object is to suppress the stress applied to a transistor as well as suppressing generation of defective operation. In a pulse output circuit having a function of outputting a pulse signal and including a transistor that controls whether to set the pulse signal to high level, in a period during which the pulse signal output from the pulse output circuit is at low level, the potential of a gate of a transistor is not set to a constant value but intermittently set to a value higher than the potential VSS. Accordingly, the stress to the transistor can be suppressed.

In a system having plural terminals including terminals A, B, when the terminal A is editing a data object and editing information is shared among the plural terminals, if the terminal B performs a changeover operation of displayed page, the editing operation in the terminal A is cancelled, and the editing information is deleted in the other terminals. In the terminal A, the editing information by that time is held, and when the data object is restored, the held editing information is transmitted to the other terminals. Then the initial display status is restored in the other terminals.

An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and / or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.

The invention discloses a flexible display substrate thin film and a manufacturing method therefor, and a display apparatus. The flexible display substrate thin film comprises a glass thin film and a plastic thin film for coating the glass thin film, wherein multiple convex parts are arranged on the upper surface of the glass thin film; multiple concave parts for accommodating the convex parts are arranged on the lower surface of the plastic thin film; and the multiple convex parts are arranged transversely, vertically or in an array manner on the glass thin film. The flexible display substrate thin film has simple manufacturing process and excellent gas barrier property; for avoiding glass thin film fracture or cracks caused by mechanical impact or thermal impact, the weight of the flexible display substrate thin film can be lowered, and the buffering shock absorption function of the plastic thin film can be utilized, so that the anti-fall-off performance and impact-resistance of the flexible display substrate thin film are greatly improved.

A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.

A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.

An ECU calculates a drive torque request value Td0 (S102) when a creep torque generation condition is satisfied (YES in S100), calculates a creep torque reflection rate Kcrp using a gear rattle prevention map instead of an ordinary map (S110) when a vehicle speed V is substantially zero and an engine is in a load drive state (YES in S106 and NO in S108) while a forward drive range is being selected (YES in S104), and calculates a product of Td0 and Kcrp as a creep torque request value Tp (S114). The ordinary map is a map decreasing Kcrp to 0 with increase in brake torque, and the gear rattle prevention map is a map decreasing Kcrp to a predetermined value larger than 0 with increase in brake torque.

To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed.A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate;wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; andthe lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).