50results about How to "Improved characteristic" patented technology

To provide a method for manufacturing a perpendicular magnetic recording medium, which is capable of coping with the much higher recording density.Disclosed is a method for manufacturing a perpendicular magnetic recording medium to be used for recording information by a perpendicular magnetic recording system, including at least a soft magnetic layer, an intermediate layer, and a magnetic recording layer on a substrate, characterized in that the method includes the step of:composing the intermediate layer of consecutive N layers (provided that N is an integer of at least 3 or more), depositing a first layer containing ruthenium (Ru) as a main component, first; setting a gas pressure during the deposition to the pressure which is higher than or the same as that in the first layer; depositing a second layer containing ruthenium (Ru), or ruthenium (Ru) containing oxygen or an oxide as a main component; and adjusting so that the oxygen content remains constant, or increases toward the uppermost layer in the second layer and succeeding layers.

Articles of footwear, including athletic footwear, include cleat structures, strapping systems, sole structures, and / or improved natural motion characteristics are described. Also, methods for making such articles of footwear (and particularly sole structures for articles of footwear) are described.

The invention provides an anode capable of relaxing stress due to expansion and shrinkage of an anode active material layer associated with charge and discharge, or an anode capable of reducing structural destruction of the anode active material layer and reactivity between the anode active material layer and an electrolyte associated with charge and discharge, and a battery using it. The anode active material layer contains an element capable of forming an alloy with Li, for example, at least one from the group consisting of simple substances, alloys, and compounds of Si or Ge. An interlayer containing a material having superelasticity or shape-memory effect is provided between an anode current collector and the anode active material layer. Otherwise, the anode current collector is made of the material having superelasticity or shape-memory effect. Otherwise, a thin film layer containing the material having superelasticity or shape-memory effect is formed on the anode active material layer.

A cryptographic unit includes a first processing unit for determining an output signal on the basis of the AES algorithm and for determining a first comparison signal, a second processing unit for determining a second comparison signal, and a release unit for providing the output signal, wherein the release unit is designed to perform a defense measure against an external tapping of the output signal when the first comparison signal is not related to the second comparison signal in a predetermined relationship. The first comparison signal is determined in a different way as compared to the second comparison signal, so that, in the case of the injection of faults into the cryptographic unit, these faults may be detected very easily.

A solid-state imaging apparatus comprising multiple anti-reflective layers which can improve a smear characteristic while suppressing a dark defect and a method for fabricating the multiple anti-reflective layers are provided. The solid-state imaging apparatus includes a light receiving unit, a charge transfer unit, and multiple anti-reflective layers. The method includes forming a first anti-reflective layer, forming a second anti-reflective layer, forming a photoresist mask, removing the second anti-reflective layer, and removing the first anti-reflective layer.

A lithium ion battery control system includes a degradation rate calculating unit, a degradation rate storage unit, a degradation rate comparing unit, a charging and discharging control circuit, and a rechargeable battery. The degradation rate calculating unit calculates a degradation rate when receiving a trigger for starting the check of the degradation rate of the battery. The degradation rate comparing unit receives a present degradation rate from the degradation rate calculating unit and a previous degradation rate from the degradation rate storage unit and compares both degradation rates. As a result, when the present degradation rate is greater than the previous degradation rate by a predetermined value, a charging and discharging condition is limited.

A solid-state image pickup device includes a semiconductor substrate having a light-incident surface, a plurality of pixels arranged on the light-incident surface, a photodiode arranged in each of the pixels, an insulating film arranged on the semiconductor substrate and configured to cover the photodiodes, wirings embedded in the insulating film, an etching stopper film distant from the lowermost wiring among the wirings, arranged adjacent to the semiconductor substrate, configured to cover at least a region where each of the photodiodes is arranged, and composed of silicon carbide, a trench arranged above each of the photodiodes so as to reach the etching stopper film, and an optical waveguide with which each of the trenches is filled, the optical waveguide having a higher refractive index than the insulating film.

A secondary battery capable of improving battery characteristics is provided. The secondary battery includes a cathode 21 containing a cathode active material capable of inserting and extracting an electrode reactant, an anode 22 containing an anode active material capable of inserting and extracting the electrode reactant, and an electrolyte containing a solvent and an electrolyte salt. At least one of the cathode 21, the anode 22, and the electrolyte contains a radical scavenger compound. The radical scavenger compound is a compound in which a group having a radical scavenger function exists as a matrix, to which one or more carboxylic metal bases or one or more sulfonic metal bases are introduced. Chemical stability of the cathode 21, the anode 22, or the electrolyte containing the radical scavenger compound is improved. Thus, at the time of charge and discharge, decomposition reaction of the electrolytic solution is easily inhibited.

An electrode for a non-aqueous electrolyte secondary battery 6 according to the present invention includes: a current collector 3; a first active material layer 2 formed on the current collector 3; and a second active material layer 5 provided on the first active material layer 2, the second active material layer 5 including a plurality of active material particles 4. The plurality of active material particles 4 is mainly of a chemical composition represented as SiOx(0≦x<1.2). The first active material layer 2 is mainly of a chemical composition represented as SiOy(1.0≦y<2.0, y>x). The area in which the first active material layer 2 is in contact with the plurality of active material particles 4 is smaller than the area in which the current collector 3 is in contact with the first active material layer 2.

A stacked wafer structure includes a CIS wafer, an ISP wafer, a lamination layer, a through silicon via and a pixel device. The CIS wafer bonds to the ISP wafer through the lamination layer. The pixel device is disposed on the CIS wafer. The through silicon via penetrates either the CIS wafer or the ISP wafer to connect devices in CIS wafer to the devices in ISP wafer electrically.

Method of producing Ta powder for tantalum solid electrolytic capacitor capable of stably providing CV value of more than 220 k and to provide the Ta powder and its Ta granulated powder. In method of producing Ta powder by vaporizing TaCl5 through heating and reducing with H2 gas, the reduction is performed under conditions that feeding rate of TaCl5 vapor passing through section area of reaction field of 1 cm2 for 1 minute is 0.05˜5.0 g / cm2·min and residence time of TaCl5 vapor in the reduction reaction field is 0.1˜5 seconds and reduction temperature of TaCl5 is 1100˜1600° C., whereby Ta powder including a single phase of β-Ta of tetragonal system or mixed phase of β-Ta and α-Ta of cubic system and having average particle size of 30˜150 nm is obtained. Further, Ta granulated powder is obtained by granulating the Ta powder.

A system and method of generating a one-way function and thereby producing a random-value stream. Steps include: providing a plurality of memory cells addressed according to a domain value wherein any given domain value maps to all possible range values; generating a random domain value associated with one of the memory cells; reading a data value associated with the generated random domain value; generating dynamically enhanced data by providing an additional quantity of data; removing suspected non-random portions thereby creating source data; validating the source data according to a minimum randomness requirement, thereby creating a validated source data; and integrating the validated source data with the memory cell locations using a random edit process that is a masking, a displacement-in-time, a chaos engine, an XOR, an overwrite, an expand, a remove, a control plane, or an address plane module. The expand module inserts a noise chunk.

A micro lens array includes a plurality of convex micro lenses formed on a transparent substrate in an array. The micro lenses are convex toward a surface of the substrate in a position inward of the surface of the substrate and the top of the convex surface of the micro lenses is lower than the surface of the substrate.

A liquid crystal display apparatus includes a liquid crystal panel with a pad portion area, the pad portion area having an input pad portion, the input pad portion including a plurality of input pads and a plurality of dummy pads, an output pad portion, and a conducting wire portion, the conducting wire portion electrically connecting two dummy pads of the plurality of dummy pads in the input pad portion, a driving integrated circuit (IC) on the pad portion area, the driving IC including an input bump portion corresponding to the input pad portion and an output bump portion corresponding to the output pad portion, and a flexible printed circuit (FPC) electrically connected to the driving IC.

A printed circuit board (PCB) assembly provided with an insulation transformer, which acts as an insulation barrier between two electrical systems. The printed circuit board (PCB) assembly has at least two separate PCB sections, and the insulation transformer is used as a support structure to mechanically interconnect the sections. Since the PCB sections are separated, the PCB sections no longer affect the creepage distance for the insulation barrier. Instead the insulating material and the physical design of the transformer determines the minimum required creepage distance. The insulating material of the transformer generally has a considerably higher CTI value than the PCB material, leading to a relatively short creepage distance being required. By breaking the creepage path on the PCB, the size of transformer will be substantially reduced compared to the prior art arrangements.

Described are means and methods for providing a cell with a protein expression unit, the method comprising providing a nucleic acid sequence comprising the unit with a nucleic acid sequence encoding a binding site for a member of a chromatin modification system for rendering chromatin more accessible for transcription (opener), wherein the opener is present in the cell. Preferred openers comprise histone modification proteins, chromatin remodeling proteins and trithorax group proteins or equivalents. The cells thus generated and nucleic acid sequences encoding such openers are provided. Openers are preferred in the context of STAR and TRAP sequences.

Irradiation with laser light is conducted, whereby an external region of a semiconductor thin film located on the outer side relative to a pattern of a light absorbing layer is thermally melted, and the light absorbing layer is heated, without melting an internal region of the semiconductor thin film located on the inner side relative to the pattern. Next, the molten semiconductor thin film is cooled, whereby microcrystal grains are produced in the vicinity of the boundary between the external region and the internal region. Further, a first lateral crystal growth progresses from the boundary toward the outer side with the microcrystals as nuclei, whereby polycrystal grains are produced in an area of the external region. Finally, heat is transferred from the heated light absorbing layer to the semiconductor thin film, whereby the internal region is melted, and thereafter a second lateral crystal growth progresses from the boundary toward the inner side with the polycrystal grains as nuclei, whereby further enlarged polycrystal grains are produced in the internal region.

A semiconductor device including a cell region and a peripheral region, the semiconductor device comprising: a guard ring region provided between the cell region and the peripheral region, the guard ring region having a barrier structure.

A snow ski or snowboard having enhanced turning capability compared to traditional skis or snowboards has a split tip and / or tail portion. The split tip / tail provides enhanced turning characteristics of the ski or snowboard. The split tips and / or tails may have additional active turning edges may have the same, or similar, curvature as the primary turning edge, thereby effectively increasing the length of the turning edge. A symmetrical or asymmetrical ski tail may be provided to further enhance turning on skis. Such a symmetrical or asymmetrical tail may have varying tail edge lengths, varying widths of split tails, interior edges, varying thickness of split tails, and / or varying core material of split tails that provides such enhanced turning ability.

In a method of manufacturing a nonvolatile semiconductor memory device, a preliminary floating gate is formed on a substrate having an active region and an inactive region that extend in a first direction. A dielectric layer and a control gate layer are formed on the substrate. A control gate, a dielectric layer, and a remaining pattern structure are formed by etching the control gate layer and the dielectric layer in a second direction until the preliminary floating gate is partially exposed. The floating gate is formed by etching the preliminary floating gate and the remaining pattern structure until the silicon substrate is exposed. The remaining pattern structure may prevent the isolation layer defining the inactive region from being damaged, thereby suppressing a leakage current in the nonvolatile semiconductor memory device.

Disclosed herein are a method for manufacturing common mode filter and a common mode filter. The method includes: performing electroplating on first coil patterns made of a conductive material to form second coil patterns having a cross-sectional area increased as compared to the first coil patterns. Therefore, the common mode filter fulfilling a miniaturization demand and having the improved characteristics such as the inductance, the DC resistance, and the like, may be implemented.

The present invention relates to a chip inductor including: a metal-polymer composite in which metal particles and polymer are mixed; a wiring pattern provided inside the metal-polymer composite to form a coil; an external electrode provided in a portion of an outer peripheral surface of the metal-polymer composite; and an insulating portion provided between the metal-polymer composite and the wiring pattern and between the metal-polymer composite and the external electrode, and a method for manufacturing the same.

A method for the treatment of tungsten carbide is provided. The starting material contains tungsten carbide particles of a W—C system represented on a phase diagram showing a monophasic domain of a γ phase having a face-centered cubic structure, upwardly delimited by a liquidus line. The particles are subjected to a homogenization treatment in the monophasic domain, and may be subsequently melted to be spheroidized. They are then quenched to freeze at ambient temperature the monophased structure. Optionally, at least one alloying element may be added to the starting material to enlarge the monophasic domain, thereby increasing the hardenability of the monophased particles.

An organic light-emitting device including an anode, a cathode, an emission layer interposed between the anode and the cathode, and at least one of the hole injecting layer and the hole transporting layer interposed between the anode and the emission layer, wherein the at least one of the hole injecting layer and the hole transporting layer includes a host material, and a dopant material as an electron acceptor, wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV.

An anode capable of relaxing internal stress and thereby preventing deformation and a battery using it are provided. An anode provided with an anode active material layer is formed on an anode current collector. The anode active material layer has active material particles containing silicon (Si) as an element, and at least some of the active material particles contain a polymer component in the particle.

The invention provides a non-aqueous electrolyte solution containing a phosphonosulfonic acid compound represented by formula (I):wherein, in formula (I), R1, R2 and R3 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a haloalkyl group having 1 to 6 carbon atoms, a phenyl group, a benzyl group, or a group represented by formula (II); R4 and R5 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 6 carbon atoms; and n represents an integer from 1 to 6; andwherein, in formula (II), R6, R7 and R8 each independently represent an alkyl group having 1 to 6 carbon atoms, a phenyl group, or a benzyl group; m represents an integer from 0 to 2; and * represents a position of bonding with the oxygen atom in formula (I).

A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.

A lens system includes: a lens unit; a drive unit driving the lens unit in an optical axis direction; a detector detecting a position of the lens unit; a lens operation unit that operates driving of the lens unit; and a computing unit that computes a positional command value for controlling driving of the lens unit based on a signal input from the lens operation unit and controls driving of the lens unit; a time setting unit; and a threshold setting unit setting a positional difference threshold for switching the first and second current values set in the drive unit. When the difference between the positional command value and the lens position is larger than the positional difference threshold and duration after the second current value is set has not exceeded the high-current maximum time, the second current value is set. In other cases, the first current value is set.