76 results about "Oxygen atom" patented technology

As a charge-transporting varnish for forming a charge-transporting thin film with excellent hole transport properties, a charge-transporting varnish is provided, comprising copper halide (I) or pseudo-copper halide (I), one of an amine selected from formulas (1) to (3), SiO2 nanoparticles, and a solvent. (where R...) 1 ~R 4 Each can independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. L represents an alkylene group having 3 to 8 carbon atoms, and oxygen atoms may be present between the carbon atoms in the aforementioned alkylene groups. However, there must be at least 3 carbon atoms between H₂N⁻ and -OH. R 5 ~R 6 Each of these can independently represent an alkyl group having 1 to 6 carbon atoms that can be replaced by a hydroxyl group, and oxygen atoms may be present between the carbon atoms of these alkyl groups. However, R 5 and R 6 (At least one alkyl group is substituted with a hydroxyl group, or an oxygen atom is present between carbon atoms.)

The present disclosure is characterized by being represented by general formula G1. In general formula G1, ring C is an aromatic hydrocarbon ring or a heteroaromatic ring. A11-A15 and A21-A25 are each independently selected from the group consisting of CRA and a nitrogen atom. RA represents a hydrogen atom or a substituent of various types. When RA exists in a quantity of more than one, the plurality of RAs may be the same or different from each other. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, a selenium atom, and NRB. RB represents a hydrogen atom or a substituent of various types. When RB exists in a quantity of more than one, the plurality of RBs may be the same or different from each other. RAs adjacent to each other or RA and RB adjacent to each other are optionally bonded to form a ring.

To provide a photoresponsive material that solves at least one of the problems of conventional technology. [Solution] The material has a crystalline structure formed by crosslinking at least one lanthanide with an organic group having 1 to 3 carbon atoms, wherein the organic group contains at least carbon atoms which may be partially or entirely substituted with other nonmetallic carbon group elements, and oxygen atoms which may be partially or entirely substituted with other nonmetallic oxygen group elements. A photoresponsive material having a peak component in the range of 533 eV to 534 eV in the O1s spectrum obtained by hard X-ray photoelectron spectroscopy.

Aspects of the present disclosure provide a method of fabricating a resistive random access memory (RRAM). For example, the method can include providing a substrate, forming a first electrode on the substrate, and forming a first metal oxide layer on the first electrode. The first metal oxide layer can act as a sink or reservoir of oxygen atoms that interact with a current conducting filament. The method can further include forming a second metal oxide layer on the first metal oxide layer. The second metal oxide layer can be configured to form conduction paths. The method can further include forming a second electrode on the second metal oxide layer. In an embodiment, the first metal oxide layer can be formed on a portion of the first electrode.

A method of controlling nitrogen and oxygen content of synthetic air is disclosed. The method may include decomposing nitrous in a decomposition system by expanding liquid nitrous into gaseous nitrous in a decomposition chamber. A gaseous mixture of oxygen gas (O2), transient oxygen atoms (O), nitrogen gas (N2), and / or transient nitrogen atoms (N) may be obtained from the decomposition. The gaseous mixture may be provided to a test chamber that is at least initially devoid of receiving an additional nitrogen gas (N2) from either an N2 supply or a reservoir of air and / or at least initially devoid of receiving additional oxygen gas (O2) from the reservoir of air. The test material may be exposed to the gaseous mixture in the test chamber. A response of the test material to the gaseous mixture may be determined.

The present invention relates to: a copolymer a monomer unit comprising a heterocyclic structure of 2 to 6 carbon atoms containing at least one oxygen atom in an amount of 1% to 40% by weight, based on 100% by weight of the total weight of the copolymer; and core-shell particles, a slurry composition, a separator, and a secondary battery comprising same.

A compound having a molecular weight of 500 to 5,000, the compound being composed of hydrogen atoms, carbon atoms, and heteroatoms, the heteroatoms being at least one selected from the group consisting of oxygen atoms, sulfur atoms, fluorine atoms, and silicon atoms, the compound having: one or more alicyclic structures, one or more aromatic ring structures directly bonded to the alicyclic structures, and one or more monovalent substituents Ms directly bonded to the aromatic ring structures, the monovalent substituents Ms being at least one selected from the group consisting of monovalent fluorine-containing aliphatic groups, monovalent fluorine-containing sulfur-containing groups, monovalent siloxane groups, and monovalent saturated hydrocarbon groups.

The light-emitting element (2) has a light-emitting layer (23) located between an anode (21) and a cathode (25). The light-emitting layer includes a plurality of quantum dots (30) and an inorganic matrix (31) filled between the plurality of quantum dots and having a metal oxide. The inorganic matrix includes a first portion (41) having a metal oxide and a second portion (42). The ratio of oxygen atoms to metal atoms in the second portion is higher than the ratio of oxygen atoms to metal atoms in the first portion, and is equal to or less than the ratio of oxygen atoms to metal atoms in the stoichiometric metal oxide.

This invention discloses a method for preparing an electrically pulsed perovskite oxygen evolution reaction (OER) catalyst. The method involves overlapping electrodes on both sides of an SRIO thin film prepared from strontium nitrate, ruthenium oxide, and iridium oxide. Under an argon atmosphere, the SRIO thin film is subjected to a 2-second electrical pulse treatment via an external voltage source, with an electric field strength of 40 V / cm. This invention utilizes ruthenium oxide and iridium oxide powders as ruthenium and iridium sources, making it easier to obtain high-purity SRIO@E catalysts. This provides significant guidance for the synthesis of noble metal-based perovskite materials. Through a simple and easy-to-implement electrical pulse treatment strategy, this invention can remove some oxygen atoms from the catalyst, increasing the number of unpaired electrons available for the catalytic reaction and improving reaction activity. Furthermore, this electrical pulse treatment strategy is simple and controllable, has universal applicability, and is expected to meet the needs of industrial production.

The application provides a control-defect silicon carbide epitaxial structure and a preparation method and application thereof, and the preparation method comprises the following steps: (1) in-situ etching a silicon carbide substrate; (2) growing a first N-type buffer layer on the surface of the silicon carbide substrate; (3) introducing oxygen atoms in-situ in an inert gas atmosphere for oxygen etching; (4) growing a second N-type buffer layer on the surface of the first N-type buffer layer; and (5) growing a drift layer on the surface of the second N-type buffer layer. The preparation method provided by the application reduces the screw dislocation and the edge dislocation in the silicon carbide epitaxial crystal, thereby improving the growth quality of the silicon carbide epitaxial structure.

The invention relates to a method for manufacturing a receiving substrate to form a composite substrate, comprising a step of supplying a base substrate, a step of deposition in a deposition chamber of an electrically charge-trapping layer in contact with the base substrate. The trapping layer comprises 40% to 80% silicon atoms, 0.1% to 45% oxygen atoms, and 0.2% to 50% nitrogen atoms. The deposition step of the trapping layer uses a precursor gas mixture. The mixture comprises a silicon gas, an oxygen gas, and a nitrogen gas. The nitrogen gas is ammonia or a set of molecules that form ammonia in the deposition chamber during the deposition step. (See Figure 1A for the abstract.)

A method is disclosed for the selective formation of silicon-containing films on various substrates, comprising the use of a precursor containing at least one oxygen atom and at least one silicon-nitrogen bond, and a non-oxidizing plasma.

The present invention provides a filter capable of adjusting the concentration of CO2 in a mixed gas containing CO2 and other gases. [Solution] A filter comprising a film containing two-dimensional particles 10a, 10b, wherein the two-dimensional particles comprise one or more layers, and the layers are given by the following formula: M m X n A filter comprising layer bodies 1a, 1b represented by the formula (wherein M is at least one group 3, 4, 5, 6, or 7 metal, X is a carbon atom, a nitrogen atom, or a combination thereof, n is between 1 and 4, and m is greater than n and 5 or less), and modifications or terminations T (T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom) 3a, 5a, 3b, 5b present on the surface of the layer bodies, through which a mixed gas containing CO2 and other gases passes, wherein the concentration of CO2 in the mixed gas after passing through the filter is higher than the concentration of CO2 in the mixed gas before passing through the filter.

This disclosure provides a water electrolysis catalyst, its preparation method, a catalytic electrode, and a hydrogen production system. The water electrolysis catalyst includes: a support comprising a coordination structure with acid corrosion resistance, the coordination structure including at least one of a hydroxyl functional group, an oxygen vacancy, and a specific site metal defect; and noble metal atoms anchored to at least a portion of the surface of the coordination structure, forming an M-O-M' bridging coordination structure with atoms on the support surface, wherein M is a noble metal, M' is a metal atom on the support surface, and O is an oxygen atom. The noble metal is anchored to the support surface in an atomically dispersed manner, greatly improving the exposure and utilization rate of the noble metal atoms, making each noble metal atom an effective active site, thereby significantly enhancing the intrinsic activity of the water electrolysis catalyst.

To provide a sealant film that is resistant to the adsorption of various organic compounds, has excellent heat-sealing properties at 140°C, but has low heat-sealing strength at 100°C, and prevents the heat-seal layers from sticking together when used as a packaging bag and attempting to heat the contents by boiling them in hot water. [Solution] A low-adsorption sealant film having a heat-seal layer made of at least one polyester-based component, and satisfying the following conditions (1) to (3). (1) When heat-seal layers are sealed together at 120°C, 0.2 MPa, and for 2 seconds, the seal strength is 4N / 15mm or more and 15N / 15mm or less. (2) When heat-seal layers are sealed together at 140°C, 0.2 MPa, and for 2 seconds, the seal strength is 8 N / 15 mm or more and 30 N / 15 mm or less. (3) In the heat seal layer, the oxygen atom abundance determined by X-ray electron spectroscopy (ESCA) is between 26.6% and 31.0%.

An organic compound characterized by being represented by any one of general formulae G1-G6. In general formulae G1-G6, R12 to R18, R22 to R28, R31, R32, R111 to R114, R211 to R214 are each a hydrogen atom or any substituent. However, at least one of R31 and R32 is other than a hydrogen atom and a deuterium atom, and at least one of R12 to R18, R22 to R28, R111 to R114, and R211 to R214 is other than a hydrogen atom. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, and a selenium atom.

A photopolymerizable silicone composition for photoforming is provided, comprising (A) an organopolysiloxane having two or more free radical polymerizable groups (excluding groups containing heteroatoms other than oxygen atoms) in one molecule, (B) hydrophobic silica particles with an average particle size of 10 nm to 1000 nm and a hydrophobicity of 60% or more obtained by methanol titration, and (C) a photopolymerization initiator. 2 After being irradiated with ultraviolet light with a wavelength of 405nm, the material was cured at 85℃ and 85%RH for 24 hours. The resulting cured material with a thickness of 2.0mm had a tensile strength of over 4.5MPa and an elongation at break of over 300%.

In this lead-acid battery, a positive electrode plate comprises a plurality of porous tubes, a core metal, a positive electrode material, and a current collector. The positive electrode material includes 0.03 mass% or more of Sb, and the density of the positive electrode material is 3.2 g / cm3 or more. The tube includes an oxygen-containing organic compound, and the LC / MS spectrum of the oxygen-containing organic compound measured with chloroform as a solvent has multiple peaks in a region where the m / z value is 400-2000. The multiple peaks are present at intervals of m / z values 20-25 and 40-50. All oxygen atoms in the oxygen-containing organic compound are contained in at least one of an ether bond and a hydroxyl group. The ratio of the total mass of oxygen atoms in the oxygen-containing organic compound to the mass of the oxygen-containing organic compound is less than 0.320. The mass of the oxygen-containing organic compound contained in the tube is 0.03-0.6 mass% of the mass of the electrolyte.

The application belongs to the technical field of OLED and specifically comprises an organic compound for a blue light device and a blue light organic electroluminescent device. The structural general formula of the organic compound is shown in the following. The application directly connects a benzofuranphenanthrol group to the 12th position of a benzanthracene nucleus, which can utilize the oxygen atom on the furan to increase the polarity and intermolecular interaction of the molecule, improve the molecular orientation when the material is stacked, thereby strengthen the permanent spontaneous orientation polarization effect, and obtain a better voltage improvement effect; on the other hand, the direct connection of the phenanthrene ring on the benzofuranphenanthrol group to the 12th position of the benzanthracene can improve the electron mobility of the material, thereby improving the electron density in the light-emitting layer, and with the increase of the electron density, the carrier recombination probability can be significantly improved, thereby reducing the accumulation of holes in the light-emitting layer, reducing the exciton quenching condition, and improving the device efficiency.I

This technology provides advantages in improving antistatic properties and optical performance. [Solution] The optical film is disposed on a substrate and comprises one or more layers. At least one layer of the optical film contains a metal oxide and a metal oxynitride. When the oxygen atom content in at least one layer is [O]at% and the nitrogen atom content is [N]at%, the following condition is satisfied: 80.0% ≤ [O] / ([O]+[N]) ≤ 99.0%.

An ink jet head including an orifice plate. The orifice plate includes a substrate, a liquid-repellent film formed on an outermost surface of the substrate on an ink ejection surface side, and an underlying film formed between the substrate and the liquid-repellent film. The underlying film contains a silicon atom (Si), a carbon atom (C), and an oxygen atom (O). The liquid-repellent film forms a siloxane bond with the underlying film. A maximum peak P of a binding energy of a Si2p orbital of a surface part of the underlying film measured by X-ray photoelectron spectroscopy satisfies formula (1): 102.9 (eV)<P≤104.0 (eV) (1).

Provided is a reflective mask blank in which the ratio of the etching rate of an absorber film to the etching rate of a protective film is large.　A reflective mask blank according to the present invention comprises a substrate, a multi-layer reflective film that reflects EUV light, a protective film, and an absorber film in this order, wherein the absorber film contains platinum, the oxygen atom content in the absorber film is less than 20 at% with respect to all atoms of the absorber film, and the rhodium content in the outermost layer of the protective film on the absorber film side is not less than 50 at% with respect to all atoms of the outermost layer.

Provided is anode material and battery. The anode material includes a silicon-based core, and a coating layer at least partially coated on a surface of the silicon-based core; the anode material satisfies that a ratio B:A is 1 to 100, where A is a mass ratio of oxygen to lithium in the anode material, and B is an atomic ratio of the number of oxygen atoms to silicon atoms obtained by test with an X-ray photoelectron spectrometer on the anode material. The ratio B:A in the anode material actually represents an oxidation degree on a surface layer of the anode material. A larger ratio indicates a higher degree of surface oxidation.

The present application relates to the field of catalytic materials, in particular to a cerium lanthanum rare earth-based carbon-nitrogen-oxygen quinary eutectic nanomaterial, a preparation method and application thereof. The cerium lanthanum rare earth-based carbon-nitrogen-oxygen quinary eutectic nanomaterial is an ultrathin flake-shaped amorphous / short-range ordered quinary lattice eutectic structure formed by atom-level eutectic of cerium, lanthanum, carbon, nitrogen and oxygen, has excellent abnormal temperature stability, and has no decay in phase and catalytic activity after being placed at normal temperature and pressure for more than 30 days. The material has a catalytic degradation efficiency of biuret of more than 99%, has low energy consumption in the preparation process and is easy to be scaled up industrially, can be widely applied to the fields of urea solution purification and automobile exhaust SCR system anti-crystallization, and solves the industry bottleneck of difficult degradation of biuret.

The application provides an europium complex and a method for preparing a gallium nitride-based red light emitting diode by using the europium complex as a precursor. 28 H 24 Cl3EuN4, and the chemical formula is Eu(Dmphen)2Cl3, wherein Dmphen represents 4,7-dimethyl-1,10-phenanthroline; the complex does not contain oxygen atoms, can be used as an oxygen-free precursor for growing a gallium nitride-based micro red light LED, fundamentally avoids the fluorescence quenching problem caused by the introduction of oxygen impurities in the existing europium doping technology, significantly improves the red light emitting efficiency of the gallium nitride-based red light LED, and improves the light emitting performance and stability of the device.

Provided is a mixed material suitable for a practically useful organic EL element having high efficiency and a long life in spite of a low driving voltage.　The mixed material for an organic electroluminescent element contains a compound represented by general formula (1) and a compound represented by general formula (2). (Ring A is a nitrogen-containing five-membered heterocyclic ring expressed by formula (1a); Ar1 and Ar2 are each a C6-18 aromatic hydrocarbon group or the like; R1 is a C6-18 aromatic hydrocarbon group or the like; (a)-(c) are numbers of substitutions; and Ar3 is a connected phenyl group in which 2-6 phenyl groups are connected.) (X is an oxygen atom or a sulfur atom; Y1 to Y12 are each C-Ra; Z1 and Z2 are each a C6-18 aromatic hydrocarbon group or the like; and Ra is hydrogen, deuterium, or a substituted or unsubstituted C6-18 aromatic hydrocarbon group or the like.)

This invention provides a method for manufacturing a sulfide solid electrolyte with high water resistance. The method includes a step of treating the sulfide solid electrolyte in a solvent selected from mixing and depolymerization processes, wherein the solvent is an aprotic solvent containing oxygen atoms.

The application discloses a Mo-containing molecular sieve and a preparation method and application thereof. n The chemical composition of the Mo-containing molecular sieve is xM2O*ySiO2*xAl2O3*zMoO, and satisfies 0.005<=x / y<=0.2 and 5<=y / z<=80 in terms of moles; n is the total number of oxygen atoms required to satisfy the valence of elements in the molybdenum oxide; and M is selected from Na or K. The molecular sieve has a novel molecular sieve composition and structure, can be used as an adsorption material to capture and detect metal ions in a water body, especially cesium ions, and has the technical effects of high capture rate and fast capture speed.