191results about How to "High film stability" patented technology

A method is described for a plasma treatment of a TiCl₄ based CVD deposited TiN layer that reduces stress, lowers resistivity, and improves film stability. Resistivity is stable in an air ambient for up to 48 hours after the plasma treatment. A TiN layer is treated with a N-containing plasma that includes N₂, NH₃, or N₂H₄ at a temperature between 500° C. and 700° C. Optionally, H₂ may be added to N₂ in the plasma step which removes chloride impurities and densifies the TiN layer. The TiN layer may serve as a barrier layer, an ARC layer, or as a bottom electrode in a MIM capacitor. An improved resistance of the treated TiN layer to oxidation during formation of an oxide based insulator layer and a lower leakage current in the MIM capacitor is also achieved.

A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa.

Provided are an organic EL device material that reduce the driving voltage of an organic EL device and increase the lifetime of the device as compared with a conventional organic EL device material. Also provided are organic electroluminescence devices containing the organic EL device material.

In an organic electroluminescent device constructed by providing at least an emitting layer using an organic material between a hole injection electrode and an electron injection electrode, in forming an emitting layer having a dopant doped into a host material, a dopant having a condensed ring obtained by condensing three or more rings is used, and the difference between the highest occupied molecular orbital in the host material and the highest occupied molecular orbital in the dopant is in a range from -0.3 eV to +0.3 eV.

A polymer film substrate is irradiated with ions to make a large number of nano-sized through-holes and the substrate is further irradiated with an ionizing radiation so that a functional monomer is grafted or co-grafted onto a surface of the film and within the holes; in addition, the sulfonic acid group is introduced into the graft chains, thereby producing a polymer ion-exchange membrane that has high oxidation resistance, dimensional stability, electrical conductivity and methanol resistance, as well as an ion-exchange capacity controlled over a wide range.

An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1 Å.

Provided are a compound for an organic optoelectronic device represented by Chemical Formula 1, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The structure of Chemical Formula 1 is shown in the specification.

The compound for an organic optoelectronic device provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and having high luminous efficiency at a low driving voltage.

The present invention provides a photosensitive resin composition comprising an alkali-soluble resin having a phenolic hydroxyl group as an end group (A); a radiation-polymerizable compound (B); and a photoinitiator (C), a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, and a semiconductor device using the photosensitive resin composition.

The invention relates to an organic electroluminescent material and an application thereof. The electroluminescent material has a molecular structure as shown in a formula (I), has relatively good thin film stability and suitable molecular energy level, can serve as a hole-transport material, and is applied to the field of organic electroluminescent.

The invention relates to an aromatic amine compound and an organic light-emitting device (OLED) containing the compound. The structural formula of the aromatic amine compound is as shown in the following description. The aromatic amine compound involved in the invention has relatively high refractive index, and can improve the light extraction efficiency of a top-emitting organic photoelectronic device when used as the capping layer of an organic light-emitting display device. The aromatic amine compound involved in the invention has relatively small extinction coefficient, and barely absorbs blue light, thereby facilitating the improvement of the luminous efficiency; meanwhile, the aromatic amine compound can effectively block water and oxygen in an external environment, and protects an OLED display panel from being eroded by the water and the oxygen, and the OLED can achieve high efficiency and long life. Compared with a known OLED, the OLED involved in the invention can greatly improve the light extraction efficiency because a material for an organic EL element with high refractive index, and excellent film stability and durabilityis used as a material for the covering layer. The organic light-emitting device involved in the invention can achieve high efficiency and long life.

The invention discloses an organic compound with xanthene as a core and a use thereof. The organic compound has a general structural formula (1). The compound has a high glass transition temperature and molecular thermal stability, is suitable for HOMO and LUMO energy levels, has high Eg, and can effectively prolong the photoelectric performances of an OLED device and a service life of the OLED device through device structure optimization.

We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.

The present invention provides a method for preparing an emulsion type adhesive material for an aqueous paint, containing a core-shell structured copolymer having a dual layer with a core comprising a starch-based copolymer, a natural polymer, and a shell comprising a hydrophobic polymer. The adhesive material for an aqueous pain obtained through the preparation method of the present invention has particularly excellent water-resisting qualities, film characteristics, and viscosity characteristics.

The invention discloses a method for preparing a super-hydrophobic surface with an ultra-critical CO2 rapid expansion method. The method comprises the following steps of: activating nano-silica with hydrochloric acid, filtering, drying, adding absolute ethanol, adding distilled water, adding two kinds of coupling agents containing fluorine and double bonds, washing a product, filtering and dryingto obtain nano-silica particles containing double bonds; adding the nano-silica particles containing double bonds into an ultra-critical CO2 reaction kettle, stirring, and spraying onto a water-basedpolyurethane paint surface which is end-capped with double bonds and is added with an initiator; and drying, grafting the nano-silica particles onto a polyurethane coating surface to form a stable structure to obtain a super-hydrophobic surface. A process used in the method is environmentally-friendly, the ultra-critical CO2 is a nontoxic, non-flammable and environmentally-friendly solvent, the solvent which quickly expands in a fluid and solute particles are easy to separate rapidly and completely, and no solvent is left in the particles; and the preparation efficiency is high, the method issuitable for large-area preparation, and high film coating stability and high scratch resistance are achieved.

A process for manufacturing of an asymmetric hollow fibre membrane, comprising the steps of extruding a polymer solution through the outer ring slit of a hollow fibre spinning nozzle, simultaneously extruding a centre fluid through the inner bore of the hollow fibre spinning nozzle, into a precipitation bath, whereby the polymer solution contains 10 to 26 wt-% of polysulfone (PSU), polyethersulfone (PES) or polyarylethersulfone (PAES), 8 to 15 wt-% polyvinylpyrrolidone (PVP), 55 to 75 wt-% N-alkyl-2-pyrrolidone (NAP) and 3 to 9 wt-% w ater the centre fluid contains 70 to 90 wt-% N-alkyl-2-pyrrolidone (NAP) and 10 to 30 wt-% water, and the precipitation bath contains 0 to 20 wt-% N-alkyl-2-pyrrolidone (NAP) and 80 to 100 wt-% water.

A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CH_x)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

Density modulated thin film electrodes, methods of making the same, and applications of the same. The density modulated thin film electrode includes a substrate formed of a current collecting material, and a thin film formed of an electrode material on the substrate. The thin film has a first surface and an opposite, second surface, and a density that is changed with a distance defined from the first surface to a plane in the thin film, the plane being parallel to the first surface. The method includes depositing the electrode material on the substrate to form the thin film, where, during deposition of the electrode material, a pressure of an operating gas is controlled and changed to a predetermined pressure value according to a deposited thickness of the electrode material, so as to make the density of the thin film changed with the distance.

An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

The invention discloses a heterocyclic compound with xanthone as a core and a preparation method and applications thereof, and belongs to the technical field of semiconductors. The structure of the compound provided by the invention is represented by a general formula (I) shown in the description. The invention also discloses the preparation method and the applications of the compound. The compound of the invention has high glass transition temperature and molecular thermal stability and has a suitable HOMO and LUMO energy leves, has a singlet-triplet energy level difference ([delta]Est), andcan be used as a doping material of a light emitting layer of an organic electroluminescent device, thereby improving the luminous efficiency and service life of the device.

The invention relates to the technical field of organic electroluminescent display, particularly discloses an organic material of an SO2 polyheterocyclic structure compound, and also discloses application of the organic material in an organic electroluminescent device. The SO2 polyheterocyclic structure compound provided by the invention is shown as a general formula (I), can be applied to the field of organic electroluminescence, and can be used as an electron transport material. The compound with the structure provided by the invention is applied to an OLED device, the driving voltage of thedevice can be reduced, and the light emitting efficiency of the device is improved.

In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

The invention relates to the technical field of organic light-emitting display, particularly discloses an organic material of a compound containing a multi-heterocyclic structure, and also discloses application of the organic material in an organic light-emitting device. The compound containing the multi-heterocyclic structure is shown as general formula (I), can be applied to the field of organicelectroluminescence, and can be used as an electron transport material. The compound with the structure provided by the invention is applied to an OLED device, and the device has the advantages of low driving voltage and high luminous efficiency.

The invention relates to the technical field of organic electroluminescence display, particularly discloses an organic material of a compound containing an SO2 multi-heterocyclic structure, and also discloses application of the organic material in an organic electroluminescence device. The compound containing the SO2 multi-heterocyclic structure provided by the invention is shown as a general formula (I), can be applied to the field of organic electroluminescence, and is used as an electron transport material. The compound with the structure provided by the invention is applied to an OLED device, the driving voltage of the device can be reduced, and the light emitting efficiency of the device is improved.