2results about How to "Suitable for large area preparation" patented technology

This invention discloses a solution-based epitaxial growth method for perovskite thin films and its preparation method, belonging to the field of perovskite optoelectronic device technology. Addressing the difficulty of achieving high-quality multilayer structures and crystal orientation control using existing solution methods, this invention first prepares a perovskite template layer with a preferred orientation on a substrate, and then uses thermal shock treatment to induce rapid crystallization of a second precursor solution under the guidance of the template layer's lattice structure. This method utilizes a solvent with inverse temperature solubility (such as 2-methoxyethanol), effectively solving the solvent orthogonality problem and achieving epitaxial growth of perovskite crystals. The resulting thin film exhibits a (001) preferred orientation throughout its thickness direction, with a Herman orientation factor as low as −0.36 and a trap state density as low as 1.62 × 10⁻⁶. 15 cm −3 The perovskite solar cells prepared using this method achieve a photoelectric conversion efficiency of 25.58% and exhibit excellent stability under high temperature and high humidity conditions. This invention features a simple and low-cost process, and is suitable for large-area fabrication and various perovskite material systems.

This invention belongs to the technical fields of optoelectronic devices, spin optoelectronics, and organic-inorganic hybrid semiconductor materials. Specifically, it relates to a circularly polarized electroluminescent device based on a one-dimensional / three-dimensional perovskite heterostructure and its implementation method. The circularly polarized electroluminescent device includes a substrate, a bottom electrode layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a top electrode stacked sequentially. The light-emitting layer is a one-dimensional / three-dimensional perovskite heterostructure formed in situ by chiral one-dimensional perovskite and three-dimensional perovskite. This invention constructs a one-dimensional / three-dimensional perovskite heterostructure within the light-emitting layer, utilizing the chiral properties of the one-dimensional perovskite to induce lattice distortion in adjacent three-dimensional perovskite at the heterostructure interface. This results in intrinsic structural chirality and excited-state chirality in the three-dimensional perovskite light-emitting region, achieving stable circularly polarized electroluminescence without the need for an external magnetic field or spin injection, thus enabling the device to simultaneously achieve high luminous efficiency and good stability.