5 results about "Vanadyl acetylacetonate" patented technology

The invention discloses a synthetic method of a cytochalasin compound curtalasin B. The synthetic method comprises the following steps: reacting a compound 22 with dimethyl ketone peroxide in a solvent at the temperature of-35 to-20 DEG C to generate a compound 23; reacting the compound 23 with boron trifluoride diethyl etherate in a solvent at-78 to 5 DEG C to obtain a compound 24; reacting the compound 24 with vanadyl acetylacetonate and tert-butyl hydroperoxide in a solvent at 15-35 DEG C to obtain a compound 25; dissolving the compound 25 in toluene, adding tri-pentafluorophenyl boron at room temperature, heating to 80 DEG C, and reacting to obtain a compound 26; and dissolving the compound 26 in absolute methanol, adding anhydrous potassium carbonate at 0-35 DEG C, and reacting at room temperature to obtain the curtalasin B. The invention further discloses a preparation method of the curtalasin B. The method is simple to operate, simple in post-treatment, low in product separation and purification cost and high in synthesis efficiency; most of the used reagents are commercially obtained, are low in price and do not need special treatment.

The invention discloses a 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-one-oxygen vanadium complex as well as a preparation method and application of the 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-one-oxygen vanadium complex. The preparation method comprises the following steps: carrying out a reaction on glucose and piperidine to obtain 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone, carrying out a reaction on 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone and vanadyl sulfate or vanadyl acetylacetonate to obtain a 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone-vanadyl complex, and carrying out a reaction on the 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone and vanadyl sulfate or vanadyl acetylacetonate to obtain the 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone-vanadyl complex. Raceme and enantiomer of the compound are shown in the specification. The obtained complex is used as a PTP1B enzyme inhibitor to be applied to preparation of drugs for reducing blood sugar. According to the invention, 2, 3-dihydro-3, 5-dihydroxy-6-methyl-4 (H) pyran-4-ketone with antioxidant activity is used as a ligand to form a complex with vanadium oxide, so that vanadium can play a role in reducing blood sugar, and oxidative stress can be potentially reduced through the antioxidant activity of the ligand.

The invention discloses a method for preparing a bismuth vanadate photo-anode material through oxygen-enriched calcination and application, and belongs to the technical field of photoelectrocatalysis. The method comprises the following steps: step 1, preparing a mixed solution of vanadyl acetylacetonate and dimethyl sulfoxide; 2, dropwise adding a mixed solution of vanadyl acetylacetonate and dimethyl sulfoxide to the surface of the BiOI thin film, transferring the BiOI thin film to an oxygen-enriched atmosphere environment in which the O2 content accounts for 40-80%, heating to a calcination temperature, and maintaining a constant-temperature reaction; and 3, after the constant-temperature reaction is finished, cooling to room temperature, and cleaning to obtain the clean bismuth vanadate photo-anode material. According to the bismuth vanadate photo-anode material prepared through the method, effective separation of photon-generated carriers can be achieved, the photoelectrocatalysis water oxidation performance is remarkably improved, and more possibilities are provided for preparing and storing clean energy in the future.

The present invention relates to a lanthanum, vanadium, and iron co-doped bismuth titanate layered perovskite thin film, a preparation method, and an application. The method includes the following steps: S1. Mix bismuth nitrate pentahydrate, lanthanum nitrate hexahydrate, tetrabutyl titanate, vanadyl acetylacetonate, iron nitrate nonahydrate, ethylene glycol monomethyl ether, acetic acid, and a chelating agent to obtain a Bi 3.25 La 0.75 Ti 3‑2x V x Fe x O 12 (BLTVF) sol, where 0 < x < 0.5; S2. Coat the BLTVF sol on a substrate to obtain a wet film; S3. Perform pyrolysis and annealing treatment on the wet film in air; S4. Repeat steps S2 and S3 to obtain a lanthanum, vanadium, and iron element co-doped Bi 3.25 La 0.75 Ti 3‑2x V x Fe x O 12 thin film. The present invention has significantly improved the energy storage performance and energy storage efficiency of the thin film on the Pt / Ti / SiO2 / Si substrate; the preparation method is extremely simple, the content of the added elements is flexibly controllable, the success rate of thin film preparation is high, and the repeatability is good; only simple processes and low-cost equipment are required, and the environmental requirements are simple, which is suitable for batch production.

A method for semiconductor bridge current protection based on vanadium dioxide thick-film thermistor is provided, which relates to the field of semiconductor bridge current protection technologies. A copper, nickel, or gold interdigitated electrode is deposited on an aluminum oxide ceramic substrate. A vanadyl acetylacetonate methanol solution is sprayed onto a surface of the heated interdigitated electrode to obtain a vanadium dioxide thermistor device. This device is connected in parallel with a semiconductor bridge to achieve thermistor-based semiconductor bridge current protection. By adjusting a synthesis method and process, vanadium dioxide with a relatively single valence state can be synthesized, thereby achieving one-step synthesis of M-phase vanadium dioxide directly on the interdigitated electrode. This preparation method avoids a cumbersome process of first preparing vanadium dioxide powder and then transferring it onto the surface of the interdigitated electrode, and the vanadium dioxide can also be more stably bonded to the interdigitated electrode surface.