Electrochemical method for improving photoelectric performance of nano bismuth vanadate film

A nano-bismuth vanadate, photoelectric performance technology, applied in chemical instruments and methods, solid-state chemical plating, circuits, etc., can solve the problems of low photocatalytic pollutant efficiency, achieve strong controllability, simple equipment, and improve photoelectricity. performance effect

Inactive Publication Date: 2013-06-26
ZHEJIANG UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] BiVO 4 It is a good semiconductor material. Nano-bismuth vanadate thin films are widely used in photoelectric conversion and photocatalytic environmental pollution. Limited by their own characteristics such as oxidation kinetics and stability, the efficiency of both photoelectric conversion and photocatalytic pollutants is relatively low. , for this reason, some scholars use Mo doping, Co-Pi, Ag + Surface Modification, Co 3 o 4 / BiVO 4 , BiVO 4 / SiO 2 Composite materials and other methods to improve the photoelectric performance and photocatalytic performance of nano-bismuth vanadate thin film, but all have great limitations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrochemical method for improving photoelectric performance of nano bismuth vanadate film
  • Electrochemical method for improving photoelectric performance of nano bismuth vanadate film
  • Electrochemical method for improving photoelectric performance of nano bismuth vanadate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1) First, ultrasonically clean the ITO conductive glass with ammonia water and 30% hydrogen peroxide at a volume ratio of 1:1, and then ultrasonically clean with acetone, absolute ethanol and deionized water in sequence;

[0018] 2) Bi(NO at a concentration of 0.2 M 3 ) 3 .5H 2 O-acetic acid solution and vanadyl acetylacetonate-acetylacetone solution with a concentration of 0.03 M are uniformly mixed according to the molar ratio of Bi:V 1:1 to obtain bismuth vanadate colloid;

[0019] 3) Spin-coat bismuth vanadate colloid on the ITO conductive glass on a KW-4A desktop glue homogenizer, then put the colloid-coated ITO conductive glass into a muffle furnace, bake at 500°C for 10 min, and repeat the above method Spin-coating and baking 6 times, the last baking at 500°C for 0.5 h, and natural cooling to obtain nano-bismuth vanadate film;

[0020] 4) Sodium perchlorate is fully dissolved in deionized water, and a sodium perchlorate aqueous solution with a concentration of...

Embodiment 2

[0026] The method is the same as that of Example 1, except that step 5) applies a voltage of -0.3V, and the electrochemical surface treatment time is 5 minutes.

[0027] The photoelectric performance test results are shown in Table 1: Under the condition of an applied bias voltage of 0.6 V, the photocurrent increased by 2.51 times after electrochemical surface treatment.

Embodiment 3

[0029] The method is the same as Example 1, except that the electrolyte concentration is 0.1 M sodium perchlorate aqueous solution, step 5) a voltage of -0.4V is applied, and the electrochemical surface treatment time is 2 minutes.

[0030] The photoelectric performance test results are shown in Table 1: Under the condition of an applied bias voltage of 0.6 V, the photocurrent increased by 2.38 times after electrochemical surface treatment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an electrochemical method for improving the photoelectric performance of a nano bismuth vanadate film. The method comprises the following steps of: spin-coating bismuth vanadate colloid prepared from a Bi(NO3)3.5H2O-acetic acid solution and a vanadyl acetylacetonate-acetylacetone solution on clean indium tin oxide (ITO) conductive glass, and roasting to obtain the nano bismuth vanadate film; preparing an aqueous solution of sodium perchlorate as electrolyte; and putting the nano bismuth vanadate film into the electrolyte, and performing electrochemical surface treatment for 1 to 20 minutes by using the nano bismuth vanadate film as a working electrode, using a platinum electrode as a counter electrode, using a saturated calomel electrode as a reference voltage and applying a voltage of minus 0.2V to minus 0.5V. The method is simple in equipment, convenient to operate, high in controllability and low in cost, can be used for greatly improving the photoelectric performance of the nano bismuth vanadate film, and is expected to be applied in the field of semiconductor photovoltaic and photolysis water.

Description

technical field [0001] The invention relates to the surface modification of thin film materials, in particular to the modification of nanometer bismuth vanadate photoelectric thin film materials by means of electrochemical methods. Background technique [0002] In the 21st century, energy and the environment are still two major problems facing mankind. With the continuous increase of human demand for energy, people began to turn non-renewable energy sources such as fossils and coal to clean and efficient new energy sources. At present, Western countries, especially Europe, are vigorously advocating the photovoltaic industry, and have achieved large-scale production, and have made great progress in solar energy utilization. Limitations and other influencing factors are greatly restricted. Since 1972, Fujishima and Honda in Japan have reported single crystal TiO 2 The electrode can continue to undergo redox reaction of water to produce hydrogen under the irradiation of ultr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08C30B5/00C30B29/30C30B33/00H01L31/18
CPCY02P70/50
Inventor 李海丽李想朱红乔冷文华
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap