Ultraviolet light detector of lead-free double perovskite single crystal and manufactruing method thereof

A lead-free double perovskite and double perovskite technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve problems such as instability and high lead toxicity, and achieve good performance and excellent performance. Effects of photoelectric properties and rapid UV response

Active Publication Date: 2019-05-31
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite these excellent properties of lead (Pb)-based halide perovskite photodetectors, there are two major problems in the commercial mass production of lead (Pb)-based halide perovskite photodetectors, namely, the high toxicity of lead and the inherent instability. sex

Method used

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  • Ultraviolet light detector of lead-free double perovskite single crystal and manufactruing method thereof
  • Ultraviolet light detector of lead-free double perovskite single crystal and manufactruing method thereof
  • Ultraviolet light detector of lead-free double perovskite single crystal and manufactruing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, preparation Cs 2 AgInCl 6 Single crystal double perovskite ultraviolet photodetectors

[0039] 1) Configure Cs 2 AgInCl 6 Precursor solution

[0040] Weigh 0.0674g CsCl, 0.0443g InCl 3 Mix with 0.0287g AgCl and dissolve in 4.8mL of hydrochloric acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0041] 2) Preparation of Cs 2 AgInCl 6 single crystal

[0042] The specific steps are: the above Cs 2 AgInCl 6 The precursor solution was cooled and crystallized three times. In the first stage, the temperature was lowered to 110°C at a rate of 2°C / h, and in the second stage, the temperature was lowered to 60°C at a rate of 1°C / h, followed by continuous heating at 60°C for 5 hours. Finally, in the third stage, the temperature is rapidly lowered to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0043] 3) Cs 2 AgInCl 6 Fabrication of Single Cry...

Embodiment 2

[0048] Embodiment 2, preparation Cs 2 NaInCl 6 Single-crystal double perovskite ultraviolet photodetectors

[0049] 1) Configure Cs 2 NaInCl 6 Precursor solution

[0050] Weigh 0.0674gCsCl, 0.0443gInCl 3 Mix with 0.0117g NaCl and dissolve in 3mL of hydrochloric acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0051] 2) Preparation of Cs 2 NaInCl 6 single crystal

[0052] The specific steps are: the Cs 2 NaInCl 6 The precursor solution was cooled and crystallized three times. In the first stage, the temperature was reduced to 110°C at a rate of 2°C / h, and in the second stage, the temperature was reduced to 60°C at a rate of 1°C / h, and then heated at 60°C for 5 hours. Finally, in the third stage, the temperature is rapidly lowered to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0053] 3) Cs 2 NaInCl 6 Fabrication of Single Crystal Devices

[0054] Cl...

Embodiment 3

[0058] Embodiment 3, prepare MA 2 AgBiI 6 Crystal double perovskite ultraviolet photodetectors

[0059] 1) Configure MA 2 AgBiI 6 Precursor solution

[0060] Weigh 0.0790g MAI, 0.2950g BiI 3 Mix with 0.1175AgI and dissolve in 2mL of hydroiodic acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0061] 2) Preparation of MA 2 AgBiI 6 single crystal

[0062] The specific steps are: put the MA 2 AgBiI 6 The precursor solution was crystallized by cooling down three times. In the first stage, the temperature was lowered to 110°C at a rate of 2°C / h, and in the second stage, the temperature was lowered to 60°C at a rate of 1°C / h, followed by continuous heating at 60°C for 5 hours. , and finally the third stage rapidly lowers to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0063] 3) MA 2 AgBiI 6 Fabrication of Single Crystal Devices

[0064] Clean the surface ...

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Abstract

The invention discloses an ultraviolet light detector of a lead-free double perovskite single crystal. The detector successively comprises a substrate, the lead-free double perovskite single crystal,an electrode, a silver colloid and a conductive gold wire from bottom to top. The lead-free double perovskite single crystal is formed by A, BI, BIII, and X. A molecular structural formula is A2BIBIIIX6, wherein the A is methylamine (MA) or Cs, the BI is Ag or Na, the BIII is Bi, Sb or In, and the X is Cl or I. A lead-free double perovskite single crystal material is selected from any one of Cs2AgInCl6, Cs2NaInCl6, MA2AgBiI6, and MA2AgSbI6. The type of double perovskite material solves a problem caused by biotoxicity of lead in traditional perovskite and has excellent photoelectric performance. Compared with a traditional perovskite material, the perovskite material of the invention has a high and rapid ultraviolet response. Good performance can be maintained in an air and humidity environment and good stability is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric detection, and in particular relates to a lead-free double perovskite single crystal ultraviolet light detector and a preparation method thereof. Background technique [0002] Lead halide semiconductor with perovskite crystal structure, its general chemical formula is APbX 3 , where A is methylamine (MA), formamidine (FA) or Cs, and X is Cl, Br or I. This type of perovskite semiconductor material has excellent optical and electronic properties, including high light absorption coefficient, direct band Gap, long carrier diffusion length, and high carrier mobility have become the most researched optoelectronic materials. It exhibits unprecedented photoelectric performance as an absorber layer in photovoltaic technology applications, and the currently certified photoelectric conversion efficiency is as high as 23.2%. Despite these excellent properties of lead (Pb)-based halide pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/09H01L31/18H01L51/46H01L51/42H01L51/48
CPCY02E10/549Y02P70/50
Inventor 李闻哲范建东袁伟南王华民冼业铭尹航
Owner JINAN UNIVERSITY
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