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A lead-free double perovskite single crystal ultraviolet light detector and its preparation method

A lead-free double perovskite and double perovskite technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve problems such as instability and high lead toxicity, and achieve good performance and excellent performance. Effects of photoelectric properties and rapid UV response

Active Publication Date: 2021-02-05
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Despite these excellent properties of lead (Pb)-based halide perovskite photodetectors, there are two major problems in the commercial mass production of lead (Pb)-based halide perovskite photodetectors, namely, the high toxicity of lead and the inherent instability. sex

Method used

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  • A lead-free double perovskite single crystal ultraviolet light detector and its preparation method
  • A lead-free double perovskite single crystal ultraviolet light detector and its preparation method
  • A lead-free double perovskite single crystal ultraviolet light detector and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0038] Embodiment 1, preparation Cs 2 AgInCl 6 Single-crystal double perovskite ultraviolet photodetectors

[0039] 1) Configure Cs 2 AgInCl 6 Precursor solution

[0040] Weigh 0.0674g CsCl, 0.0443g InCl 3 Mix with 0.0287g AgCl and dissolve in 4.8mL of hydrochloric acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0041] 2) Preparation of Cs 2 AgInCl 6 single crystal

[0042] The specific steps are: the above Cs 2 AgInCl 6 The precursor solution was cooled and crystallized three times. In the first stage, the temperature was reduced to 110°C at a rate of 2°C / h, and in the second stage, the temperature was reduced to 60°C at a rate of 1°C / h, and then heated at 60°C for 5 hours. Finally, in the third stage, the temperature is rapidly lowered to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0043] 3) Cs 2 AgInCl 6 Fabrication of Single Crystal Devices

...

Embodiment 2

[0048] Embodiment 2, preparation Cs 2 NaInCl 6 Single-crystal double perovskite ultraviolet photodetectors

[0049] 1) Configure Cs 2 NaInCl 6 Precursor solution

[0050] Weigh 0.0674gCsCl, 0.0443gInCl 3 Mix with 0.0117g NaCl and dissolve in 3mL of hydrochloric acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0051] 2) Preparation of Cs 2 NaInCl 6 single crystal

[0052] The specific steps are: the Cs 2 NaInCl 6 The precursor solution was cooled and crystallized three times. In the first stage, the temperature was reduced to 110°C at a rate of 2°C / h, and in the second stage, the temperature was reduced to 60°C at a rate of 1°C / h, and then heated at 60°C for 5 hours. Finally, in the third stage, the temperature is rapidly lowered to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0053] 3) Cs 2 NaInCl 6 Fabrication of Single Crystal Devices

[0054] Cl...

Embodiment 3

[0058] Embodiment 3, prepare MA 2 AgBiI 6 Crystal double perovskite ultraviolet photodetectors

[0059] 1) Configure MA 2 AgBiI 6 Precursor solution

[0060] Weigh 0.0790g MAI, 0.2950g BiI 3 Mix with 0.1175AgI and dissolve in 2mL of hydroiodic acid, heat at 140°C-160°C for 5h until the solution is clear and completely dissolved.

[0061] 2) Preparation of MA 2 AgBiI 6 single crystal

[0062] The specific steps are: put the MA 2 AgBiI 6 The precursor solution was crystallized by cooling down three times. In the first stage, the temperature was lowered to 110°C at a rate of 2°C / h, and in the second stage, the temperature was lowered to 60°C at a rate of 1°C / h, followed by continuous heating at 60°C for 5 hours. , and finally the third stage rapidly lowers to room temperature at a rate of 5 °C / h until a lead-free perovskite single crystal with a size of about 3 mm is produced.

[0063] 3) MA 2 AgBiI 6 Fabrication of Single Crystal Devices

[0064] Clean the surface ...

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Abstract

The invention discloses a lead-free double perovskite single crystal ultraviolet light detector, which comprises from bottom to top: a substrate, a lead-free double perovskite single crystal, an electrode, silver glue and a conductive gold wire. The lead-free The double perovskite single crystal is composed of A, BI, BIII, and X, and the molecular structure formula is A 2 BIBIIIX 6 , wherein A is methylamine (MA) or Cs, BI is Ag or Na, BIII is Bi, Sb or In, and X is Cl or I. The lead-free double perovskite single crystal material is selected from Cs 2 AgInCl 6 、Cs 2 NaInCl 6 、MA 2 AgBiI 6 and MA 2 AgSbI 6 any of these. This type of double perovskite material solves the problems caused by the biological toxicity of lead in traditional perovskite, and has excellent photoelectric properties. Compared with traditional perovskite materials, it has a higher and faster ultraviolet response; in air and humidity It can maintain good performance in an environment with better stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric detection, and in particular relates to a lead-free double perovskite single crystal ultraviolet light detector and a preparation method thereof. Background technique [0002] Lead halide semiconductor with perovskite crystal structure, its general chemical formula is APbX 3 , where A is methylamine (MA), formamidine (FA) or Cs, and X is Cl, Br or I. This type of perovskite semiconductor material has excellent optical and electronic properties, including high light absorption coefficient, direct band Gap, long carrier diffusion length, and high carrier mobility have become the most researched optoelectronic materials. It exhibits unprecedented photoelectric performance as an absorber layer in photovoltaic technology applications, and the currently certified photoelectric conversion efficiency is as high as 23.2%. Despite these excellent properties of lead (Pb)-based halide pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/09H01L31/18H01L51/46H01L51/42H01L51/48
CPCY02E10/549Y02P70/50
Inventor 李闻哲范建东袁伟南王华民冼业铭尹航
Owner JINAN UNIVERSITY
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