Ultraviolet detector manufacturing method

Abstract

The invention belongs to the technical field of photoelectric detection, and particularly discloses an ultraviolet detector manufacturing method which is achieved by gradient assembly of multi-size zinc oxide quantum dots in multiple layers of graphene. According to the ultraviolet detector manufacturing method, structure and performance advantages of the ZnO quantum dots and the graphene are combined, and collochemistry is adopted as the basic method to obtain the ZnO quantum dots with different sizes, and the band gaps of the ZnO quantum dots vary from the near ultraviolet area to the deep ultraviolet area; wet chemistry is adopted to prepare single-layer oxidized graphene, carboxyl functional group modification is then carried out on the surface of the single-layer oxidized graphene so that ZnO quantum dots with a single size can be suitable for being assembled on the surface of the single-layer oxidized graphene, and then the ZnO quantum dots (QD) with different sizes are used as active materials of ultraviolet response to construct a multi-layer sandwich type structure. According to the ultraviolet detector manufacturing method, gold, or platinum or ITO is used as electrode materials, a horizontal distribution type strip-shaped or itnerdigital electrode structure is designed, and then an ultraviolet detector is obtained and inter-band absorption response from near ultraviolet to deep ultraviolet is achieved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, in particular to a preparation method for constructing an ultraviolet detection device by gradient assembly of multi-size zinc oxide quantum dots in multi-layer graphene. Background technique [0002] Ultraviolet detection is an important dual-use photoelectric detection technology for both military and civilian purposes. It has a wide range of applications in flame and missile plume monitoring, space communication, organic pollution and ozone monitoring, chemical and biological analysis, etc. Silicon-based, it needs to filter the incident visible light and infrared light and needs to be equipped with cooling components; compared with this, wide-bandgap semiconductors with band gaps in the ultraviolet region, such as SiC, diamond, GaN and ZnO, etc., naturally avoid silicon These problems of the detector; among them, the band gap of ZnO at room temperature is about 3.37eV, and the ...

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Problems solved by technology

[0003] In the study of ZnO-based ultraviolet detection, the more prominent progress is focused on the design and preparation of thin-film devices. People combine energy band engineering design and use a variety of thin-film technologies to prepare Mg 1-x Zn x O alloy materials, constructing ultraviolet detectors with different structures such as Schottky, p-n, p-i-n, etc., have made a meaningful discussion on the photoelectric response characteristics of the visible blind area and even the solar blind area; although theoretically, Mg x Zn 1-x The bandgap of O can be adjusted from 3.3 to 7.8 eV, which is expected to achieve a wide range of ultraviolet detection from 160 to 380 nm, but Mg 1-x Zn x The phase separation problem in O thin films is serious, the crystal quality needs to be improved, and p-type doping is a well-known bottleneck problem

[0004] At the same time, ZnO nanowires with high specific surface area and excellent crystallinity provide a good material basis for the construction of high-sensitivity ultraviolet detection devices; There are obvious advantages, but the device manufacturing process mostly adopts the "pick and place" method, and the reported detection range is mainly in the visible blind area, and mostly responds to a single wavelength

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