The invention discloses a method for synthesizing p type doped silicon carbide by microwave in situ reaction. The steps include: using a group IIIA elementary substance or a compound containing the group IIIA element as the dopant, taking artificial graphite powder, activated carbon, coke or carbon fiber as the carbon source, and employing silicon powder or mixed powder of silicon powder and silicon oxide powder as the silicon source, under a vacuum condition, performing heat preservation for a period of time in a microwave irradiated electromagnetic field so as to obtain the p type doped silicon carbide. The preparation process has no need for raw material pretreatment, a subsequent annealing process or other processes, also has no need for a catalyst, a template and a substrate, etc., and has the characteristics of rapidity, simplicity, high efficiency and good reproducibility. In addition, because of the fast heating speed, uniform heating, small thermal inertia, short production cycle and other advantages unique to microwave irradiation treatment technology itself, the preparation cost is further reduced.