A composition for film formation capable of forming a silica-based
coating film having low water absorption and
dielectric constant of 2.1 or lower and useful as an interlayer insulating
film material in
semiconductor devices, etc. The composition contains: (A) a product of
hydrolysis and condensation obtained by hydrolyzing and condensing at least one
silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water, <
paragraph lvl="0"><in-line-formula>RaSi(OR1)4-a (1) < / in-line-formula>wherein R represents a
hydrogen atom, a
fluorine atom, or a monovalent
organic group, R1 represents a monovalent
organic group, and a is an integer of 1 or 2, <
paragraph lvl="0"><in-line-formula>Si(OR2)4 (2) < / in-line-formula>wherein R2 represents a monovalent
organic group, <
paragraph lvl="0"><in-line-formula>R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (3) < / in-line-formula>wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an
oxygen atom, a
phenylene group, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a
boiling point or
decomposition temperature of from 250 to 450° C.; and (C) an
organic solvent.