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39 results about "Bond rupture" patented technology

Bond Rupture and Formation. Chemical reactions involve bond rupture and formation. In covalently bonded carbon molecules, for example, the bonds can be broken in two ways: symmetrically or asymmetrically. In a symmetrical rupture, each atom in the original covalent bond receives one electron.

Domestic refuse suspension-type combustion carbonization pyrolysis system and treatment technique thereof

The invention discloses a domestic refuse suspension-type combustion carbonization pyrolysis system and a treatment technique thereof. The system is sequentially composed of a refuse conveying platform, a suspension-type pyrolysis combustion integrated furnace, a soda lye washer, a honeycomb plasma flue gas treatment device, a power pulse electrochemical photoelectric ion waste gas treatment device, a peculiar smell advanced treatment device containing high-energy oxygen nano water, a deduster and an induced fan. The treatment technique comprises the following steps: carrying out pyrolysis on domestic refuse, combusting, disacidifying by soda lye washing, carrying out plasma ionization to remove dust and tar, carrying out high-power narrow-pulse electron bombardment to promote bond rupture and recombination of stubborn harmful substances, removing flue gas and peculiar smell by using high-energy oxygen water, filtering through the deduster to remove dust, and discharging through the induced fan. The domestic refuse treatment technique disclosed by the invention has the advantages of high decrement degree and higher exhaust emission quality than national standard. The system using the technique has the advantages of low investment, simple operation, high safety and environment friendliness, low carbon and energy saving, and can comprehensively and basically solve the problem in domestic refuse.
Owner:安徽未名科键环境有限公司

Method for subcritical alcohol extrusion stress induced devulcanization of vulcanized rubber powder

The invention relates to a method for subcritical alcohol extrusion stress induced devulcanization of vulcanized rubber powder. The method comprises the following steps: mixing a linear high polymer material accounting for 0 to 30% of the total mass of reactants, waste rubber powder accounting for 65 to 97% of the total mass of the reactants and a devulcanization auxiliary agent accounting for 0.2 to 5% of the total mass of the reactants and subjecting the obtained mixture to a melt extrusion devulcanization reaction in a double-screw extruder with subcritical alcohol extrusion reaction conditions and a high screw speed; and subjecting the reactants to water cooling, striping and drying or to roller calendaring, cooling and sheet formation so as to obtain a devulcanized reclaimed rubber material. According to the invention, the method is an improvement to a conventional method for devulcanization of vulcanized rubber powder under subcritical water extrusion composite induction; solubility and permeability of a devulcanization promoter and the reaction mixture are improved, selectivity of cross bond rupture in devulcanization is further improved, and devulcanization efficiency is improved; reaction process is easy to control, no obvious harmful gas is produced, high yield and low energy consumption are realized, large-scale production of the method can be easily carried out, small pollution is posed to the environment, and a devulcanization product re-vulcanized material has high mechanical properties.
Owner:NANJING UNIV OF TECH +1

Method for synthesizing lapatinib intermediate in microchannel reactor

InactiveCN108285421AIncreased ability to adsorb catalystsWide range of responsesOrganic compound preparationChemical recyclingOrganic synthesisNitrobenzene
The invention provides a method for synthesizing a lapatinib intermediate in a microchannel reactor, and belongs to the field of anticancer drug synthesis in organic synthesis. The method solves the problems that in a traditional synthesis process of a high-temperature high-pressure catalytic hydrogenation reactor, the yield and purity are low, violent explosion easily occurs to generate dangers,dechlorination and ether oxygen bond rupture and degradation are caused when the reaction time under high temperature is long, and the recycling and reusing rate of a catalyst is low. The method for synthesizing the lapatinib intermediate in the microchannel reactor comprises the following steps that 1) 2-chloro-1-(3-fluorobenzyloxy)-4-nitrobenzene is added into an organic solvent, and the activated-carbon-loaded noble metal catalyst is added, serves as a first material and enters a preheating module of the microchannel reactor or a microreactor; 2) the preheated first material and a second material hydrogen are injected into a reaction module set of the microchannel reactor or the microreactor for a reaction respectively, a reaction solution flowing out of a cooling module is collected, and 3-chloro-4-(3-fluorobenzyloxy)aniline is obtained after post-treatment. The method is suitable for the synthesis of the lapatinib intermediate.
Owner:HEILONGJIANG XINCHUANG BIOLOGICAL TECH DEV CO LTD

Preparation method of 2,5-diaminotoluene sulfate

The invention provides a preparation method of 2,5-diaminotoluene sulfate, which mainly relates to effective separation of reaction products 2,5-diaminotoluene and o-toluidine and removal technique of o-toluidine in a 2,5-diaminotoluene sulfate product. The method comprises the following steps: by using 2-aminoazotoluene as the raw material, carrying out reducing metallic iron, zinc or other azo bond rupture reduction one-step reaction or distilling off the byproduct o-toluidine and filtering out the metal sludge, carrying out alkaline extraction, adsorbing and decolorizing to trace amounts of OT, and reacting with sulfuric acid to obtain the high-quality 2,5-TDAS, wherein the yield is 70-86%; or distilling off the byproduct o-toluidine, filtering out the metal sludge, adding sulfuric acid into the filtrate, filtering, taking out the 2,5-TDAS crude product, and repeatedly adsorbing and decolorizing with acidic/alkaline activated carbon to remove the OT in the product, wherein the total yield is 65-76%. The product 2,5-TDAS is preferably used in cosmetics due to high quality and low toxicity, and the o-toluidine content is less than 10 ppm. The alkaline extraction and activated carbon adsorption and decolorization techniques can lower the energy consumption, enhance the productivity and greatly reduce the wastewater amount.
Owner:YANCHENG DRAGON CHEM +1

A suspended combustion carbonization cracking system for domestic waste and its treatment process

The invention discloses a domestic refuse suspension-type combustion carbonization pyrolysis system and a treatment technique thereof. The system is sequentially composed of a refuse conveying platform, a suspension-type pyrolysis combustion integrated furnace, a soda lye washer, a honeycomb plasma flue gas treatment device, a power pulse electrochemical photoelectric ion waste gas treatment device, a peculiar smell advanced treatment device containing high-energy oxygen nano water, a deduster and an induced fan. The treatment technique comprises the following steps: carrying out pyrolysis on domestic refuse, combusting, disacidifying by soda lye washing, carrying out plasma ionization to remove dust and tar, carrying out high-power narrow-pulse electron bombardment to promote bond rupture and recombination of stubborn harmful substances, removing flue gas and peculiar smell by using high-energy oxygen water, filtering through the deduster to remove dust, and discharging through the induced fan. The domestic refuse treatment technique disclosed by the invention has the advantages of high decrement degree and higher exhaust emission quality than national standard. The system using the technique has the advantages of low investment, simple operation, high safety and environment friendliness, low carbon and energy saving, and can comprehensively and basically solve the problem in domestic refuse.
Owner:安徽未名科键环境有限公司

Formation method of semiconductor structure

A method for forming a semiconductor structure, comprising: providing a semiconductor substrate formed with several grooves; forming a first silicon oxide layer on the side walls and bottom surfaces of the grooves and the surface of the semiconductor substrate, and the surface of the first silicon oxide layer Part of the silicon atoms in the silicon oxide layer are connected to the ethoxy group; an inert plasma treatment process is performed to break the bond between the ethyl group and the oxygen atom in the ethoxy group on the surface of the first silicon oxide layer to form a silicon-oxygen dangling bond; perform water vapor treatment process, the oxygen in the silicon-oxygen dangling bond on the surface of the first silicon oxide layer is combined with hydrogen to form a silicon-oxygen-hydrogen bond; an ultraviolet treatment process is performed to remove the hydrogen element in the silicon-oxygen-hydrogen bond on the surface of the first silicon oxide layer to form Silicon-oxygen-silicon bond; perform a second high aspect ratio deposition process to form a second silicon oxide layer on the surface of the first silicon oxide layer; remove the first silicon oxide layer and the second silicon oxide layer on the semiconductor substrate, and place in the trench A shallow trench isolation structure is formed. The compactness of the shallow trench isolation structure of the present invention is increased.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Formation method of semiconductor structure

The invention provides a formation method of a semiconductor structure. The formation method of a semiconductor structure comprises the steps: providing a semiconductor substrate, wherein a plurality of grooves are formed in the semiconductor substrate; forming a first oxygen ambient silica layer on the surface of the side wall and the bottom of the grooves and on the surface of the semiconductor structure, wherein part of silicon atoms on the surface of the first oxygen ambient silica layer are connected with ethoxy; performing an inertia plasma processing technology to realize bond rupture between the ethyl and oxygen atoms in the ethoxy on the surface of the first oxygen ambient silica layer to form a silicon oxygen dangling bond; performing a water vapour processing technology to realize combination of the oxygen and the hydrogen in the silicon oxygen dangling bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen hydrogen bond; performing an ultraviolet processing technology to remove the protium in the silicon oxygen hydrogen bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen silicon bond; performing a second high aspect ratio deposition technology to form a second oxygen ambient silica layer on the surface of the first oxygen ambient silica layer; and removing the first oxygen ambient silica layer and the second oxygen ambient silica layer on the semiconductor substrate, and forming a shallow groove isolation structure in the grooves. The formation method of a semiconductor structure can increase the compactness of the shallow groove isolation structure.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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