An epitaxially grown layer III-V solar cell is separated from the growth substrate by propagating a crack close to the epi/wafer interface. The crack is driven by the elastic strain energy built up due to thermal stresses between GaAs and polyimide by cooling below room temperature. A GaAs wafer is bonded to a polyimide substrate on the epi-side and scribed on the opposite side. The crack is initiated from the scratch and guided along the interface using an epitaxially grown sacrificial layer with lower fracture toughness under the solar cell. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new cells, resulting in savings in raw materials and grinding and etching costs amounting to up to 30% of the cost of the cell. Several cells are integrated on a common blanket polyimide sheet and interconnected by copper plating. The blanket is covered with a transparent spray-on polyimide that replaces the cover glass. The solar cell is stress-balanced to remain flat on orbit.
Wide bandgap materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are very promising for light-emitting diodes (LEDs) and power electronics. These materials are extremely hard and difficult to machine and very expensive. The lack of good quality bulk GaN substrates with a smooth surface at a reasonable price is hampering the development of vertical devices.
A rapid thinning technique is presented by lifting-off a 20-70 μm thick layer from the surface within a fraction of a second, which leaves the surface shiny and smooth. The savings in lapping and polishing add up to 60%, when this technique is incorporated in the crystal manufacturing process. This technology also has application for backside thinning where the savings are even larger.