1519 results about "Grain structure" patented technology

The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.

Improved aluminum-copper-lithium alloys are disclosed. The alloys may include 3.4-4.2 wt. % Cu, 0.9-1.4 wt. % Li, 0.3-0.7 wt. % Ag, 0.1-0.6 wt. % Mg, 0.2-0.8 wt. % Zn, 0.1-0.6 wt. % Mn, and 0.01-0.6 wt. % of at least one grain structure control element, the balance being aluminum and incidental elements and impurities. The alloys achieve an improved combination of properties over prior art alloys.

A sintered polycrystalline diamond material (PCD) of extremely fine grain size is manufactured by sintering a diamond powder with pre-blended catalyst metal under high pressure/high temperature (HP/HT) processing. The PCD material has an average sintered diamond grain structure of less than 1.0 μm.

The invention has a grain structure with an outer shell and several inner cores. The grain size is from 100 nanometers to 100 microns. The inner cores are compound grain that includes active substance and conducting additive. The outer shell is a carbon layer. The active substance takes 20-95wt% of total cathode active material, and is mixture of one or several transition metallic compound selected from silicon and lithium storage whose thermodynamic equilibrium potential is less than 1.5v. The cathode material can be made by using mechanical process or thermal method, and can be directly used as cathode material or used with other existing cathode material.

The present invention provides a nano-precision sintering system 1 for sintering a nano-sized powder of a material in the pulse energization and pressure sintering process to obtain a highly purified sintered compact having a nano-sized grain structure, said nano-precision sintering system 1 comprising: at least one pre-process chamber 20 defined by at least one sealed housing 21 having at least one glove and designed to be controlled into a predetermined atmosphere; a sintering process chamber 30 defined by a sealed housing 31 having at least one glove and designed to be controlled into a predetermined atmosphere; a shut-off system 26 disposed in a passage providing communication between the pre-process chamber and the sintering process chamber so as to block the communication between the two chambers selectively while keeping it in an air tight condition; and a pulse energization and pressure sintering machine 50 having a vacuum chamber “C” allowing for the sintering process to be carried out under a vacuum atmosphere, wherein the vacuum chamber is disposed in the sintering process chamber such that the former can be isolated from the latter.

A method for obtaining a desired dopant profile of an emitter for a solar cell which includes depositing a first amorphous silicon layer having a first doping level over an upper surface of the crystalline silicon substrate, depositing a second amorphous silicon layer having a second doping level on the first amorphous silicon layer, and heating the crystalline silicon substrate and the first and second amorphous silicon layers to a temperature sufficient to cause solid phase epitaxial crystallization of the first and second amorphous silicon layers, such that the first and second amorphous silicon layers, after heating, have the same grain structure and crystal orientation as the underlying crystalline silicon substrate

A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion of the film sample is irradiated with sufficient intensity to fully melt such section of the sample throughout its thickness, and the beam pulse having a predetermined shape. This portion of the film sample is allowed to resolidify, and the re-solidified at least one portion is composed of a first area and a second area. Upon the re-solidification thereof, the first area includes large grains, and the second area has a region formed through nucleation. The first area surrounds the second area and has a grain structure which is different from a grain structure of the second area. The second area is configured to facilitate thereon an active region of an electronic device.

A method of manufacturing an oxide dispersion strengthened ferritic steel excellent in high-temperature creep strength having a coarse grain structure is provided. This method comprises mixing either element powders or alloy powders and a Y₂O₃ powder, subjecting the mixed powder to mechanical alloying treatment, solidifying the resulting alloyed powder by hot extrusion, and subjecting the resulting extruded solidified material to final heat treatment involving heating to and holding at a temperature of not less than the AC₃ transformation point and slow cooling at a rate of not more than a ferrite-forming critical rate to thereby manufacture an oxide dispersion strengthened ferritic steel which comprises, as expressed by % by weight, 0.05 to 0.25% C, 8.0 to 12.0% Cr, 0.1 to 4.0% W, 0.1 to 1.0% Ti, 0.1 to 0.5% Y₂O₃ with the balance being Fe and unavoidable impurities and in which Y₂O₃ particles are dispersed in the steel. In this method, by using a TiO₂ powder as an element powder of a Ti component to be mixed at the mechanical alloying treatment or by additionally adding an Fe₂O₃ powder, the bonding of Ti with C is suppressed so that the C concentration in the matrix does not decrease. As a result, α to γ transformation during the heat treatment is ensured and it is possible to manufacture an oxide dispersion strengthened ferritic steel having a coarse and equiaxed grain structure effective in improving high-temperature creep strength.

Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.

The present invention is high magnetic induction and high grade non-orientation electrical steel and its making process. The high magnetic induction and high grade non-orientation electrical steel consists of C not more than 0.0050 wt%, N not more than 0.0030 wt%, Si 1.50-2.50 wt%, Al 0.80-1.30 wt%, Mn 0.20-0.50 wt%, P not more than 0.030 wt%, S not more than 0.005 wt%, Sb 0.03-0.10 wt% or Sn 0.05- 0.12 wt%, and B 0.0005-0.0040 wt%, except Fe and inevitable impurities. Its making process includes initial rolling and high temperature winding to obtain ideal hot rolled steel belt structure; cold rolling to provide the energy for crystal grain growth in re-crystallizing annealing, and re-crystallizing annealing in controlled temperature to obtain ideal crystal grain structure. It has excellent surface quality, high magnetic induction and low iron loss, and is suitable for use in high efficiency motor iron core.

A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitirde may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitirde is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.

A sintered polycrystalline diamond material (PCD) of extremely fine grain size is manufactured by sintering under high pressure/high temperature (HP/HT) processing, a diamond powder which is blended with a pre-milled source catalyst metal compound. The PCD material has an average sintered diamond grain structure of less than about 1.0 μm.

A method of processing a billet of metallic material in a continuous manner to produce severe plastic deformation. The billet is moved through a series of CSPD dies in one operation to efficiently produce a billet characterized by a controlled grain structure. The long billets of metal stock are moved along the processing path through the CSPD dies with plural sets of pinch rolls which grip the billet and push it into the entry channel of the dies. Other sets of pinch rolls pull the billet from the exit channel of the dies.

A composite material includes a metallic second phase dispersed in a metallic matrix material. The metallic second phase has a grain structure that is at least partially martensitic. The second phase material is preferably an alloy of nickel and titanium, each present in the range from 48 to 52 atomic %, optionally in combination with further additives. The second phase particles can be present in the form of granular particles, wires, fibers, whiskers, or layers, making up 5 to 60 vol. % of the overall composite material. The matrix material is preferably an aluminum alloy. The composite material has a high damping capacity and a high tensile strength provided by the matrix, and a high damping capacity provided by the second phase. A method of making the composite material involves mixing a powdery matrix material and a powdery second phase material, and then heat and consolidating the mixture at a temperature of 400 to 700 ° C. and a pressure of 100 to 300 MPa.

A coated cutting tool is composed of one or more layers of refractory compounds of which at least one layer is single-phase α-alumina with a pronounced columnar grain-structure and strong texture in the [300]-direction. The alumina layer is preferably deposited by CVD (Chemical Vapor Deposition) and the preferred microstructure and texture are achieved by adding a second metal halide, and a texture modifying agent, to the reaction gas. When coated cemented carbide cutting tools according to the invention are used in the machining of steel or cast iron, several important improvements compared to prior art have been observed, particularly in the machining of nodular cast iron.

The invention relates to a method for preparing a magnesium alloy section through continuous angle rotation shearing, extrusion and shaping and a mould. The method comprises the following steps: (1) a magnesium alloy blank material is subjected to homogenization treatment; (2) a mould of an extrusion mould with a plurality of angle rotation and molding is preheated; and the inside of a mould passage is evenly coated with lube; (3) an extrusion cylinder is heated to a temperature of between 175 and 325 DEG C; and (4) the homogenized blank material is heated to a temperature of between 200 and 350 DEG C; the extrusion ratio of the extrusion mould is between 4 and 100; and the magnesium alloy blank material is subjected to unidirectional extrusion at an extrusion speed of between 3 and 6 m/min so that the magnesium alloy blank material is subjected to compression and extrusion with high extrusion ratio and equal passage extrusion with a plurality of angle rotation. The magnesium alloy material prepared through the method has an ultrafine crystal grain structure, has the advantages of substantially improving the plasticity, low temperature superplasticity and high strain speed of the magnesium alloy material and has high yield stress.

Abstract of the Disclosure The apparatus for operating on a workpiece includes a die defining first and second apertures and an interior therebetween. The first aperture and the interior of the die are structured to receive the workpiece. The interior of the die can be structured to shape the workpiece into a predetermined configuration. The apparatus includes at least one rotatable pin extending at least partially into the interior of the die. The pin is structured to at least partially stir the workpiece as the workpiece moves through the interior of the die to thereby refine the grain structure of the workpiece.