The invention provides a MEMS deep silicon etching method, which belongs to the technical field of deep silicon etching. The technical solution is: a MEMS deep silicon etching method, including deposition steps, cleaning steps, etching steps, purging steps, repeated deposition steps, repeated cleaning steps, repeated etching steps and repeated purging steps, after several The deposition step, cleaning step, etch step and purge step are side-circulated, and the sample is out of vacuum. The beneficial effects of the present invention are: the deep silicon etching method of the present invention can be applied in the industrial manufacturing environment of large-scale integrated circuits, in particular, it can enable the sensor element to maintain the integrity of the device during long-term etching, and It can meet the needs of device design, adding a purge step can reduce the temperature of the vacuum reaction chamber and the sample stage, so that the vacuum reaction chamber can be kept in a constant range, which helps to provide the uniformity of large-scale samples after etching and the roughness of the sidewall of the MEMS device.