The invention provides a deep
silicon etching method for an MEMS, and belongs to the technical field of deep
silicon etching. According to the technical scheme, the deep
silicon etching method of theMEMS comprises a deposition step, a cleaning step, an etching step, a purging step, a repeated deposition step, a repeated cleaning step, a repeated etching step and a repeated purging step, and is characterized in that side circulation is carried out through the deposition step, the cleaning step, the etching step and the purging step for multiple times, and a sample is vacuumized. The beneficialeffects of the deep
silicon etching method are as follows: the deep
silicon etching method disclosed by the invention can be applied to a large-scale
integrated circuit industrial manufacturing environment; particularly, the integrity of sensing elements can be kept during long-time etching, the device design requirement can be met, the purging step is added, the temperature of the vacuum
reaction chamber and the temperature of the sample table can be reduced, the vacuum
reaction chamber is kept within a constant range, and the uniformity of large-size samples after being etched and the roughness of the side wall of the MEMS device can be easily provided.