The present disclosure relates to the technical field of
infrared detection, and particularly relates to an
amorphous silicon infrared detector pixel, a
chip, a movement and equipment, the
amorphous silicon infrared detector pixel comprising an absorption sensing part; the absorption sensing part comprises an
amorphous silicon thermal sensitive layer and a
metal electrode layer; the absorption sensing part comprises a thermal sensitive working area and a non-thermal sensitive working area, the amorphous
silicon thermal sensitive layer is located in the thermal sensitive working area, the amorphous
silicon thermal sensitive layer in the thermal sensitive working area has a target thickness, the thickness of the amorphous
silicon thermal sensitive layer in the non-thermal sensitive working area is zero, the thermal sensitive working area generates resistance change in response to a received thermal
signal; the
metal electrode layer is located in the non-thermal sensitive working area and at least contacts the side surface of the thermal sensitive working area; wherein, an adjacent pair of
metal electrode layers located on the side surface of the thermal sensitive working area form quasi-parallel electrodes. Thus, by setting the thickness of the amorphous silicon thermal sensitive layer in the non-thermal sensitive working area to zero,
noise is greatly reduced,
heat capacity is greatly reduced,
thermal response time is shortened, and device performance is improved.