The invention belongs to the technical field of back contact cells, and particularly relates to a back contact
cell capable of reducing LID, a preparation method of the back contact
cell and a
cell assembly. The back contact cell capable of reducing the LID comprises a
silicon wafer, and a light-receiving surface
passivation layer and an anti-reflection layer which are sequentially arranged on a light-receiving surface of the
silicon wafer, and the light-receiving surface
passivation layer comprises a first tunneling
oxide layer and a
hydrogen-doped and carbon-doped
silicon layer which are sequentially arranged; the silicon layer is
amorphous silicon or
polycrystalline silicon; the anti-reflection layer comprises a
hydrogen-doped
silicon carbide film layer, the
hydrogen-doped
silicon carbide film layer comprises a first hydrogen-doped
silicon carbide layer and a second hydrogen-doped silicon
carbide layer which are sequentially arranged, the
carbon doping concentration of the first hydrogen-doped silicon
carbide layer is smaller than that of the second hydrogen-doped silicon
carbide layer, the thickness of the first hydrogen-doped silicon carbide layer is 10-30 nm, and the thickness of the second hydrogen-doped silicon carbide layer is 50-100 nm. According to the invention, the
passivation effect, the optical effect and the LID anti-attenuation capability can be considered, the LID is reduced, the battery stability is improved, and the battery reliability is improved.