The invention discloses a 
laser preparation method for large-area patterned 
graphene. The preparation method comprises the following steps: (1) a 
solid carbon source is dispersed in an 
organic solvent to obtain a dispersion liquid, and the surface of a 
metal substrate is coated with the dispersion liquid in a 
spinning manner to obtain a uniform 
carbon coating; (2) under the condition of the protection of 
inert gas, a 
high power density laser beam is adopted to irradiate the 
carbon coating, and carbon atoms in the 
solid carbon source and 
metal atoms in the 
metal substrate are formed into a 
solid solution under function of 
irradiation; the 
high power density laser beam is moved away or the 
irradiation operation is stopped, when the 
metal substrate is cooled, the oversaturated 
solid solution is formed, and the carbon atoms are separated out of the oversaturated 
solid solution and formed on the surface of the substrate to form 
graphene. The invention provides a novel method which is convenient, fast, low in cost and high in efficiency and prepares the large-area patterned 
graphene. The product obtained through the method can be applied to the following fields: next generation microcomputers, flat-panel displays, super-capacitors, transparent conductive electrodes, sensors, solar batteries, micro-nano electronic devices, photoelectronic devices, self-
spinning quantum devices, novel compound materials and so on.