BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application

A technology of nonlinear optics and compounds, applied in nonlinear optics, selenium/tellurium compounds, chemical instruments and methods, etc., can solve problems affecting practical use, low optical damage threshold, slow development of nonlinear crystals, etc.

Active Publication Date: 2010-07-07
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

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  • BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application
  • BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application
  • BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application

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Experimental program
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Embodiment l

[0044] Embodiment 1, prepare powdery BaGa 4 Se 7 Compound:

[0045] Using BaSe+2Ga 2 Se 3 =BaGa 4 Se Reaction Formula Prepares BaGa by Solid State Reaction 4 Se 7 compound;

[0046] The BaSe is 2.163 g, the Ga 2 Se 3 It is 7.526 grams; namely BaSe: Ga 2 Se 3 =0.01mol:0.02mol;

[0047] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosage, put them into the mortar, mix and grind them carefully, then put them into a Φ12mm×20mm quartz tube, and evacuate them to 10 -3 After pa, the quartz tube was melted and packaged with a hydrogen-oxygen flame, put into a muffle furnace, and slowly raised to 800°C, the heating rate was 50°C / hour, and the temperature was kept constant for 48 hours. After cooling, take it out. At this time, the sample is relatively loose, so take it out The sample is re-ground and mixed, then placed in a quartz tube and vacuum-packed, and sintered in a muffle furnace at 800°C for 24 hours. At thi...

Embodiment 2

[0048] Embodiment 2, prepare powdery BaGa 4 Se 7 Compound:

[0049] Adopt Ba+4Ga+7Se=BaGa 4 Se 7 Reaction formula to prepare BaGa by solid state reaction method 4 Se 7 Compound; the Ba is 1.373 grams, the Ga is 2.788 grams, and Se is 5.527 grams, i.e. Ba: Ga: Se=0.01mol: 0.04mol: 0.07mol;

[0050] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×20mm quartz tube, vacuumize to 10-3Pa and use The flame melts and encapsulates the quartz tube, puts it into a muffle furnace, and slowly raises it to 900°C. The heating rate is 10°C / hour, and the temperature is kept constant for 48 hours. Take it out after cooling. At this time, the sample is relatively loose. Take out the sample and grind it again. , then placed in a quartz tube and vacuum-packed, and sintered in a muffle furnace at 900°C for 24 hours. At this time, the sample shrank into a bloc...

Embodiment 3

[0051] Embodiment 3, prepare powdery BaGa 4 Se 7 compound.

[0052] Adopt BaSe+4Ga+6Se=BaGa 4 Se 7 Reaction formula to prepare BaGa by solid state reaction method 4 Se 7 Compound; said BaSe is 2.163 grams, Ga is 2.788 grams, and Se is 4.73 grams; i.e. BaSe: Ga: Se=0.01mol: 0.04mol: 0.06mol;

[0053] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosages, put them into a mortar, mix and carefully grind them, then put them into a Φ12mm×20mm quartz tube, and evacuate them to 10 -3 After pa, melt and package the quartz tube with a flame, put it into a muffle furnace, and slowly raise it to 950°C, the heating rate is 30°C / hour, keep the temperature for 48 hours, take it out after cooling, at this time the sample is relatively loose, take out the sample again Grind and mix well, then put it in a quartz tube and vacuum seal it, and sinter it in a muffle furnace at 950°C for 24 hours. At this time, the sample shrinks into ...

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Abstract

The invention relates to a BaCa4Se7 compound, a BaCa4Se7 nonlinear optical crystal, a preparation method and application. The BaCa4Se7 compound is prepared by adopting a solid-phase reaction, and the BaCa4Se7 nonlinear optical crystal is grown by adopting a high-temperature melt spontaneous crystallization method, a flux growth method or a Bridgman method. In the growth of the BaCa4Se7 nonlinear optical crystal, the crystal is easy to grow and transparent and has no package and the advantages of higher growing speed, low cost, easy obtaining of a crystal in a larger size, and the like. The obtained BaCa4Se7 nonlinear optical crystal has the advantages of wider optical transparency range, larger hardness, good mechanical property, difficult cracking and deliquescence, easy processing and storage, and the like. The BaCa4Se7 nonlinear optical crystal can be used for preparing a nonlinear optical device.

Description

technical field [0001] The present invention relates to a kind of BaGa 4 Se 7 Compound, BaGa 4 Se 7 nonlinear optical crystals (BaGa 4 Se 7 single crystal) and the BaGa 4 Se 7 Single crystal preparation method and the BaGa 4 Se 7 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths of laser ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C30B29/46C30B9/12C30B11/02C30B33/02G02F1/355
Inventor 姚吉勇梅大江傅佩珍吴以成陈创天
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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