KYSiS4 compound, KYSiS4 nonlinear optical crystal, preparation method and application

A nonlinear optics and compound technology, applied in nonlinear optics, silicon compounds, chemical instruments and methods, etc., can solve the problems of slow development of nonlinear crystals, affecting practical use, difficult crystal growth, etc., achieving easy processing and preservation, The effect of fast growth and low cost

Inactive Publication Date: 2015-05-27
SHANGHAI UNIV OF ENG SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the actual use

Method used

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  • KYSiS4 compound, KYSiS4 nonlinear optical crystal, preparation method and application
  • KYSiS4 compound, KYSiS4 nonlinear optical crystal, preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Preparation of powdered KYSiS 4 Compound:

[0036]Using K 2 S+Y 2 S 3 +2SiS 2 =2KYSiS 4 The reaction formula is to prepare KYSiS by solid state reaction method 4 compound;

[0037] The K 2 S is 1.100 g, the Y 2 S 3 2.740 g, the SiS 2 is 1.840 grams; ie K 2 S:Y 2 S 3 :SiS 2 =0.01mol:0.01mol:0.02mol;

[0038] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosage, put them into the mortar, mix and grind them carefully, then put them into a Φ12mm×20mm quartz tube, and evacuate them to 10 -3 After pa, the quartz tube was melted and packaged with an oxyhydrogen flame, put into a muffle furnace, and slowly raised to 800°C, the heating rate was 50°C / hour, and the temperature was kept constant for 72 hours. After cooling, take it out. At this time, the sample is relatively loose. The sample is re-grinded and mixed, then placed in a quartz tube and vacuum-packed, and sintered in a muffle furnace at 800°C for...

Embodiment 2

[0040] Preparation of powdered KYSiS 4 Compound:

[0041] Using K 2 S+2Y+2Si+7S=2KYSiS 4 The reaction formula is to prepare KYSiS by solid state reaction method 4

[0042] compound; the K 2 S is 1.100 grams, the Y is 1.780 grams, the Si is 0.560 grams, and the S is 2.240 grams, namely K 2 S:Y:Si:S=0.01mol:0.02mol:0.02mol:0.07mol;

[0043] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×20mm quartz tube, and vacuum to 10 -3 After pa, melt and package the quartz tube with a flame, put it into a muffle furnace, and slowly raise it to 900°C. The heating rate is 10°C / hour, and the temperature is constant for 72 hours. After cooling, take it out. At this time, the sample is relatively loose. Take out the sample again. Grind and mix well, then put it in a quartz tube and vacuumize it, and sinter it in a muffle furnace at 900°C for 72 hours. At...

Embodiment 3

[0045] Preparation of powdered KYSiS 4 Compound:

[0046] Using K 2 S+Y 2 S 3 +2Si+4S=2KYSiS 4 The reaction formula is to prepare KYSiS by solid state reaction method 4 compound; the K 2 S is 1.100 g, the Y 2 S 3 is 2.740 grams, the Si is 0.560 grams, and the S is 1.280 grams, namely K 2 S:Y 2 S 3 :Si:S=0.01mol:0.01mol:0.02mol:0.04mol;

[0047] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosages, put them into a mortar, mix and carefully grind them, then put them into a Φ12mm×20mm quartz tube, and evacuate them to 10 -3 After pa, melt and package the quartz tube with a flame, put it into a muffle furnace, and slowly raise it to 900°C. The heating rate is 30°C / hour, and the temperature is kept constant for 72 hours. After cooling, take it out. At this time, the sample is relatively loose. Grind and mix well, then put it in a quartz tube and vacuumize it, and sinter it in a muffle furnace at 900°C for 72 hou...

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Abstract

The invention relates to a KYSiS4 compound, a KYSiS4 nonlinear optical crystal, a preparation method and an application. The KYSiS4 compound is prepared by adopting a solid-phase reaction; the KYSiS4 nonlinear optical crystal grows by adopting a high-temperature flux spontaneous crystallization method; during the growth of the KYSiS4 nonlinear optical crystal, crystal parts grow up easily, are transparent without being packaged, and have the advantages that the growth rate is higher, the cost is low, and the crystal in larger in size can be acquired easily; and the obtained KYSiS4 nonlinear optical crystal has the advantages of wider light-transmission wave band, higher hardness, good mechanical property, uneasiness in breaking or air-slaking, easiness in processing and storage, and can be used for manufacturing nonlinear optical devices.

Description

technical field [0001] The present invention relates to a KYSiS 4 Compound, KYSiS 4 The nonlinear optical crystal (KYSiS 4 single crystal) and the KYSiS 4 Single crystal preparation method and the KYSiS 4 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths of laser light, so that the laser can b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/00C30B29/46C30B11/00G02F1/355
Inventor 梅大江吴远东
Owner SHANGHAI UNIV OF ENG SCI
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