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BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and preparation method and application

A nonlinear optics, compound technology, applied in nonlinear optics, silicon compounds, chemical instruments and methods, etc., can solve the problems of low light damage threshold, affecting practical use, slow development of nonlinear crystals, etc.

Active Publication Date: 2013-04-10
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

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  • BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and preparation method and application
  • BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and preparation method and application

Examples

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Effect test

Embodiment 1

[0043] Embodiment 1, prepare powdery BaGa 2 SiSe 6 Compound:

[0044] Using BaSe+Ga 2 Se 3 +SiSe 2 =BaGa 2 SiSe 6 Reaction formula to prepare BaGa by solid state reaction method 2 SiSe 6 Compound; The BaSe is 4.326 grams, the Ga 2 Se 3 7.527 g, the SiSe 2 It is 3.720 grams; namely BaSe: Ga 2 Se 3 : SiSe 2 =0.02mol:0.02mol:0.02mol;

[0045] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a quartz tube of Φ12mm×16mm, and evacuate them to 10 -3 After pa, the quartz tube is melted and packaged with a hydrogen-oxygen flame, put into a muffle furnace, slowly raised to 800°C, and kept at a constant temperature for 48 hours. After cooling, take it out, take out the sample and re-grind and mix it, and then put it in the quartz tube for vacuum packaging. , sintered in a muffle furnace at 700 ° C for 24 hours, at this time, take it out, put it in ...

Embodiment 2

[0046] Embodiment 2, prepare powdery BaGa 2 SiSe 6 Compound:

[0047] Adopt BaSe+2Ga+Si+5Se=BaGa 2 SiSe 6 Reaction formula to prepare BaGa by solid state reaction method 2 SiSe 6 Compound; the BaSe is 4.326 grams, the Ga is 2.789 grams, the Si is 0.562 grams, and the Se is 7.896 grams, i.e. BaSe: Ga: Si: Se=0.02mol: 0.04mol: 0.02mol: 0.10mol ;

[0048] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and vacuumize to 10 -3 After pa, the quartz tube is melted and packaged with a flame, put into a muffle furnace, and slowly raised to 950°C, the heating rate is 10°C / hour, and the temperature is kept constant for 48 hours. After cooling, take it out, put it into a mortar, mash and grind it to obtain Preparation of powdered BaGa 2 SiSe 6 Compound products.

Embodiment 3

[0049] Embodiment 3, prepare powdery BaGa 2 SiSe 6 Compound:

[0050] Using BaSe+Ga 2 Se 3 +Si+2Se=BaGa 2 SiSe 6 ; Reaction formula prepares BaGa by solid state reaction method 2 SiSe 6 Compound; The BaSe is 4.326 grams, the Ga 2 Se 3 is 7.527 grams, the Si is 0.562 grams, and the Se is 3.158 grams, namely BaSe: Ga 2 Se 3 :Si:Se=0.02mol:0.02mol:0.02mol:0.04mol;

[0051] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosage, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and evacuate them to 10 -3 After pa, melt and seal the quartz tube with a flame, put it into a muffle furnace, raise it to 750°C, the heating rate is 60°C / hour, keep the temperature for 48 hours, take it out after cooling, put it in a mortar, smash and grind it to get a powder BaGa 2 SiSe 6 Compound products.

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Abstract

The present invention relates to a BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and a preparation method and application. The BaGa2SiSe6 compound is prepared by a solid state reaction. The BaGa2SiSe6 nonlinear optical crystal grows by the high-temperature melt spontaneous crystallization method or the Bridgman-Stockbarger method. In the growth of the BaGa2SiSe6 nonlinear optical crystal, the crystal is easy to grow up and transparent without inclusions. The preparation method has the advantages of fast growth rate, low growth temperature, low cost, and easily available large size crystals. The BaGa2SiSe6 nonlinear optical crystal has the advantages of relatively wide light transmission band, high hardness, good mechanical properties, easy fragmentation and deliquescence, easy processing and preservation, etc. The BaGa2SiSe6 nonlinear optical crystal can be used for the production of non-linear optical devices.

Description

technical field [0001] The present invention relates to a kind of BaGa 2 SiSe 6 Compound, BaGa 2 SiSe 6 nonlinear optical crystals (BaGa 2 SiSe 6 single crystal) and the BaGa 2 SiSe 6 Single crystal preparation method and the BaGa 2 SiSe 6 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/00G02F1/355
Inventor 姚吉勇尹文龙冯凯梅大江傅佩珍吴以成
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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