29 results about "Bridgman method" patented technology

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention relates to the technical field of energy conversion, in particular to a SnSe-based homogeneous thermoelectric device and a preparation method thereof, and the preparation method comprises the following steps: S1, adopting a Bridgman method to grow an n-type SnSe-based crystal material and a p-type SnSe-based crystal material; s2, calculating an optimal single-arm size by adopting a finite element method according to the material performance parameters; s3, cutting the n-type SnSe-based crystal material and the p-type SnSe-based crystal material into single arms confirmed by simulation according to a calculation result of the S2; and S4, the single arm and the electrode plate are welded together by adopting a surface mount technology, and the SnSe-based homogeneous thermoelectric device is prepared. The method is developed on the basis that the mechanical properties of a p-type SnSe-based material (in-plane direction) and an n-type SnSe-based material (out-plane direction) are greatly different, and the room-temperature refrigerating capacity needs to be further improved, and a new thought is provided for preparing the layered thermoelectric material into a high-performance thermoelectric device.

The invention relates to a sulfur-gallium-silver-sodium compound and a sulfur-gallium-silver-sodium infrared nonlinear optical crystal as well as a preparation method and application thereof, the molecular formula of the compound is NaAg3Ga8S14, the molecular weight is 1353.20 g / mol, the compound has an asymmetric center and is crystallized in a Cm space group of a monoclinic system, and the cell parameters are as follows: a is equal to 12.2616 (8), b is equal to 11.0956 (7), c is equal to 9.2131 (6), beta is equal to 114.981 (2) degrees, Z is equal to 2, and the volume is 1136.18 (13) 3. The crystal is prepared by a high-temperature melt method, a chemical vapor transport method or a Bridgman-Stockbarger method. The crystal has the advantages of being high in laser damage resistance, moderate in nonlinear optical effect, wide in light-transmitting wave band, large in hardness, good in mechanical performance, not prone to fragmentation and deliquescence, easy to process and store and the like, and can be used for manufacturing infrared nonlinear optical devices.

The invention provides a double-layer crucible. The double-layer crucible comprises an outer circular tube-shaped container, an inner circular tube-shaped container and a T-shaped cylindrical plug, the double-layer structure can solve the problems of raw material loss and proportion imbalance caused in the process of filling the raw materials into the crucible, and the perovskite crystal which can be used for normal-temperature nuclear radiation detection can be industrially prepared by using the Bridgman method in an economic mode. And a vacuum cavity can be provided as a temperature buffer area, so that the thermal disturbance of a crystal growth interface is reduced. The method can also be used for atmosphere regulation and control, and component segregation caused by element volatilization is relieved. The invention also provides a method for preparing a perovskite polycrystal material and a method for preparing a perovskite single crystal.

The invention discloses a manufacturing method and device of a high-entropy single-crystal thermoelectric material, a medium and a product. The manufacturing method of the high-entropy single-crystal thermoelectric material comprises the following steps: putting a high-entropy raw material into a first container, and vacuumizing and sealing the first container; the sealed first container is smelted, quenched and annealed to generate a high-entropy polycrystalline cast ingot; the high-entropy polycrystalline cast ingot is ground, so that high-entropy single-phase powder of a single-phase structure is obtained; putting the high-entropy single-phase powder into a second container, and vacuumizing and sealing the second container; and performing single-crystal growth on the vacuumized and sealed high-entropy single-phase powder in the second container based on a Bridgman method to obtain the high-entropy single-crystal thermoelectric material. The problem that the integrity, uniformity and quality of the crystal are damaged due to the fact that the second phase is easily separated out in the crystal growth process is solved, and single crystal growth of the high-entropy thermoelectric material is achieved.

The application discloses a gallium oxide crystal growth device and method by the vertical Bridgman method. The gallium oxide crystal growth device comprises a furnace body, a heater and a lifting assembly. A graphite lining cavity assembly and a corundum cavity assembly are arranged in the furnace body to separate the furnace body into three independent cavities, i.e. a crystal growth cavity, a protection cavity and a heating cavity. A platinum-rhodium crucible is arranged in the crystal growth cavity. The heater is arranged in the heating cavity. The preset gas is introduced into the three cavities, and the pressure in the protection cavity is lower than that in the crystal growth cavity and the heating cavity. By controlling the atmosphere type and pressure difference of each cavity, the carbon dioxide and oxygen generated at high temperature in the crystal growth cavity are prevented from escaping outward to corrode the heater, and the reverse diffusion of the external impurity gas into the crystal growth cavity to pollute the gallium oxide crystal is avoided. The crystal growth device can protect the heater, prolong the service life of the device, and significantly improve the purity and quality of the crystal.

The invention provides a praseodymium ion-doped fluorine chloride new wave band laser crystal and a growth method and application thereof, and relates to the technical field of laser materials, the chemical formula of the laser crystal is xPr: MeClF, x ranges from 0.003 to 0.03, Me is one of Mg, Ca, Sr or Ba, the laser crystal is grown by adopting a Bridgman-Stockbarger method, and the method comprises the following steps: weighing PrF3, MeF2 and MeCl2 raw materials according to a stoichiometric ratio, uniformly mixing, and preparing the praseodymium ion-doped fluorine chloride new wave band laser crystal. Then putting the mixture into a crucible; and placing the crucible in an inert atmosphere, heating to melt the material, removing impurities, then descending to grow, and after the growth is finished, cooling to room temperature to obtain the praseodymium ion doped fluorine chloride new wave band laser crystal. Compared with the prior art, the praseodymium ion doped laser crystal shows a new fluorescent band in orange red light and deep red light wave bands, and the new fluorescent band luminescence of the praseodymium ion doped laser crystal can be realized.

The present invention relates to the technical field of cadmium zinc telluride crystal growth quality supervision, and in particular to a cadmium zinc telluride crystal growth quality supervision method and system based on the Internet of Things. The method effectively improves the growth quality of cadmium zinc telluride crystals. The method deploys sensors in a growth furnace based on the Bridgman method to collect temperature data and position data, establishes a temperature field temperature cloud map based on the temperature data and position data, and then establishes a dynamic growth model. The dynamic growth model is used to obtain an ampoule motion trajectory through real-time analysis, and the trajectory is associated with the temperature field temperature cloud map in relative motion to obtain a temperature field relative motion model. The ampoule relative motion temperature data is obtained based on the temperature field relative motion model to obtain a corresponding correction data set. A correction instruction corresponding to the correction data set is set to correct the correction data set.

This invention relates to a series of alkali metal rare earth chalcogenides and a series of alkali metal rare earth chalcogenide nonlinear optical crystals, their preparation methods, and their applications. The general chemical formula for both the series of halides and the nonlinear optical crystals is A3Ln. 11 Ga 19 Q 45 X3, where A = K, Rb, Cs; Ln = La, Pr, Nd; Q = S, Se; X = Cl, Br, I, all belong to the hexagonal crystal system with space group and cell parameter Z = 1. This series of halides is synthesized using a high-temperature solid-state method, while this series of nonlinear optical crystals is grown using a high-temperature solution method or the Bridgman process. This material can be used to manufacture second harmonic generators, up- and down-frequency converters, optical parametric oscillators, etc.

The invention provides a method for inducing directional growth of Sn crystal grains, which belongs to the technical field of brazing and comprises the following steps: preparing a single crystal Co substrate by using a Bridgman method as a substrate for inducing the growth of the Sn crystal grains; carrying out grinding and polishing treatment on the single crystal Co substrate; printing a layer of Sn paste or planting Sn balls on the processed single crystal Co substrate; and carrying out non-pressure reflow soldering on the single crystal Co substrate printed with the layer of Sn paste or implanted with the Sn ball in a reflow furnace. According to the method for inducing the oriented growth of the Sn crystal grains, single crystal Sn with the crystal orientation of [0] can be obtained, and the bonding strength of welding spots can be improved.

The application provides a single crystal ZrCoSb semi-Hassler alloy and a preparation method and application thereof, and belongs to the technical field of alloys. The preparation method comprises the following steps: (1) alloy raw materials are subjected to smelting to obtain a polycrystal ZrCoSb ingot; (2) the polycrystal ZrCoSb ingot obtained in the step (1) is subjected to crystal growth through a Bridgman method to obtain a single crystal ZrCoSb semi-Hassler alloy; and the pulling rate during the crystal growth is 0.5-2 mm / h. According to the application, the polycrystal ingot is first obtained through smelting, then the crystal growth is carried out through the Bridgman method, the pulling rate in the growth process is controlled, and a large-size single crystal ZrCoSb semi-Hassler alloy is slowly grown by using a temperature gradient.

The invention belongs to the technical field of halide semiconductor nuclear detection, and particularly relates to a bipolar charge transfer halide semiconductor single crystal for high-energy radiation detection and a preparation method and application thereof. The general formula of the crystal is Cs1-xAxPb1-yByBr3-zXz, A is one or more of Na, K, Rb, Cu, Tl and H3O, B is one or more of Si, Ge, Sn, Mg, Ca, Sr, Ba, Zn, Cd and Hg, X is one or more of F, Cl, I, BF4, HCOO, OH, CN, SCN, NCS, SH, NO3 and H2POO, 0 < = x < = 1, 0 < = y < = 1, and 0 < = z < = 3. Zone-melting purification is combined with the vertical Bridgman method, the crack-free large-size high-quality single crystal is prepared, the crystal yield and the device uniformity are improved, bipolar charge transfer is achieved, the device structure is simplified, and the method can be widely applied to the field of nuclear detection.

The invention discloses a high-performance bismuth telluride-based thermoelectric material and a preparation method thereof, the chemical formula of the bismuth telluride-based thermoelectric material is XaBi2-xSbxTe3 + y, X is a doped transition metal element, a is more than 0 and less than or equal to 0.1, x is more than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1; the preparation method comprises the following steps: respectively weighing bismuth, antimony, tellurium and X metal simple substance particle raw materials, and sequentially mixing and sintering to obtain a polycrystalline cast ingot; and growing crystals on the cast ingot by adopting a Bridgman method under a certain process condition, and finally performing hot extrusion to obtain the P-type bismuth telluride-based thermoelectric material. The thermoelectric material prepared by the method has excellent thermoelectric performance and mechanical performance.

The invention relates to a selenium-gallium-mercury-magnesium compound and a selenium-gallium-mercury-magnesium infrared nonlinear optical crystal as well as a preparation method and application thereof, the molecular formula of the compound is MgHgGa4Se8, the molecular weight of the compound is 1135.46 g / mol, the molecular formula of the crystal is MgHgGa4Se8, the molecular weight of the crystal is 1135.46 g / mol, the crystal has no symmetry center and belongs to a tetragonal crystal system, the space group is # imgabs0 #, the cell parameters are as follows: # imgabs1 # and # imgabs2 #, alpha = beta = gamma = 90 degrees, Z = 1, and beta = gamma = 90 degrees. And the crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method or a Bridgman-Stockbarger method, wherein the volume of the crystal is # imgabs3 # and # imgabs4 #. The crystal has the advantages of being large in nonlinear optical effect, good in crystal growth habit, good in mechanical performance, large in hardness, not prone to fragmentation and deliquescence, easy to process and store and the like, can be used for manufacturing infrared nonlinear optical devices, and has important application in the fields of photoelectric countermeasure, laser communication, medical treatment and the like.

The invention relates to the field of thermoelectric materials and semiconductor refrigeration, and discloses a thermoelectric refrigeration material based on a P-type diamond-like carbon-based Cu3SbSe4 crystal and a preparation method of the thermoelectric refrigeration material, the material is an Ag solid solution P-type Cu3SbSe4 crystal material, and the molar ratio of Cu to Ag to Sb to Se is (3-x): x: 1: 4; wherein x is more than or equal to 0.03 and less than or equal to 0.24, and a Bridgman method is adopted. The compact Cu3SbSe4 crystal material is successfully prepared by a method of firstly adjusting a slow cooling temperature zone by optimizing a preparation process and then filling nitrogen to adjust pressure. And the crystal quality and mobility are improved through solid solution Ag, meanwhile, the carrier concentration of the material is maintained, and finally the electrical transport performance of the material is optimized. The P-type Cu3SbSe4 crystal provided by the invention has the advantages of rich source materials, low price, high mechanical strength and the like, a thermoelectric refrigeration device constructed by the P-type Cu3SbSe4 crystal realizes an effective refrigeration effect, and the diamond-like thermoelectric material Cu3SbSe4 has a great potential of becoming a thermoelectric refrigeration material.

The invention belongs to the technical field of optical technology and crystal materials, and particularly relates to an alkaline earth metal thiophosphate compound and an alkaline earth metal thiophosphate nonlinear optical crystal as well as a preparation method and application thereof, the chemical formula of the series of compounds and the crystal is [Ba6S] [Ba3X] [Ba2 (PO3S) 3] 3, X is F or Cl, the series of compounds and the crystal belong to a hexagonal system, the space group is P63mc, the cell parameter Z is 2, and the cell parameter Z is 2. The alkaline earth metal thiophosphate compound is synthesized by adopting a vacuum high-temperature solid-phase reaction method, and the alkaline earth metal thiophosphate nonlinear optical crystal grows by adopting a Bridgman method (Bridgman-Stockbarger method). The material can be used for manufacturing second harmonic generators, upper and lower frequency converters, optical parametric oscillators and the like.

The invention discloses a novel crucible for growth of gallium oxide single crystals by a Bridgman method and a growth method, and belongs to the technical field of preparation of gallium oxide single crystals. The substrate comprises a metal layer and an isolation layer, and an opening is formed in the top of the metal layer to form a containing cavity; the isolation layer is arranged on the inner side wall of the metal layer, the thermal expansion coefficient of the isolation layer is gradually reduced inwards from the side close to the metal layer, and the difference value between the thermal expansion coefficient of the face, close to the metal layer, of the isolation layer and the thermal expansion coefficient of the metal layer is not larger than 1 * 10 <-6 > k <-1 >, the thermal expansion coefficient of the side, making contact with the gallium oxide single crystal, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >. The crucible is more suitable for the Bridgman method, and high-quality gallium oxide single crystals can be obtained while the production cost is reduced.

The invention discloses a method for optimizing the growth quality of a cadmium zinc telluride crystal. The method comprises the following steps: acquiring data of growing the cadmium zinc telluride crystal by a historical vertical Bridgman method; relates to the technical field of tellurium-zinc-cadmium crystal preparation, a physical process model for growing tellurium-zinc-cadmium crystals by adopting a vertical Bridgman method is constructed by adopting a neural network algorithm, and in initial parameter generation of the neural network algorithm, partial information exchange is carried out among X coding combinations, so that the initial parameters of the tellurium-zinc-cadmium crystals are obtained. X coding combinations are generated, and part of coding in each coding combination of the X coding combinations is randomly changed to generate a plurality of new coding combinations, so that the probability of finding a globally optimal parameter or a parameter close to the globally optimal parameter is increased; a Gaussian process model is constructed through a Bayesian optimization algorithm to predict mean square errors under different coding combinations, so that unnecessary search steps are reduced, and the global search capability is further enhanced; and calculating an expected improvement value of a new coding combination, and after multiple times of iteration, enabling the expected improvement value to be more likely to approach an optimal parameter, thereby reducing a prediction error.

This application discloses a doped zinc germanate crystal, its preparation method, and its application. The molecular formula of the doped zinc germanate crystal is Zn. 2‑x GeO4:xMn, where Mn is divalent manganese with a valence of 0 ≤ x ≤ 0.5, is a series of crystals prepared as polycrystalline powders using a high-temperature solid-state method. Large crystals are grown using methods such as the Bridgman process, molten salt method, and Czochralski method, but not limited to these methods. This series of crystals exhibits steady-state luminescence characteristics, high light output, excellent radiation stability, and a low detection limit. Furthermore, due to the stable structure of the crystals, they can achieve long-term stable operation under X-ray irradiation. They can be used in many fields such as flawless inspection of electronic components, radiation imaging, and security inspection.

The invention discloses a thermal field structure for vertical Bridgman method crystal growth and a growth method, and relates to the technical field of crystal growth. Comprising a furnace body, the top wall of the furnace body is provided with a pressure relief hole, and the side wall of the furnace body is provided with infrared temperature measurement windows which are symmetrically distributed and provided with air supply ports; the heat preservation cavity is formed in the furnace body, a gap exists between the heat preservation cavity and the inner wall of the furnace body, and a first hole channel is formed in the heat preservation top wall of the heat preservation cavity; the heat preservation side wall of the heat preservation cavity comprises a bottom side wall and a flow guide layer which are stacked from bottom to top, and second hole channels which are symmetrically distributed and are arranged on the same straight line with the infrared temperature measurement window are formed in the bottom side wall; a third hole channel is formed between the bottom side wall and the bottom of the furnace body, and symmetrically-distributed flow guide holes are formed in the flow guide layer. The silicon molybdenum rods are vertically arranged in the heat preservation cavity and evenly installed on the heat preservation top wall in an annular array mode. When the thermal field structure is used for growth of oxide crystals, volatile matters can be prevented from being deposited on the infrared temperature measurement window, and the stability of the thermal field can be ensured.

The invention belongs to the technical field of single crystal growth, and particularly discloses an improved horizontal Bridgman method large-size organic single crystal growth device and a preparation method thereof.The device comprises a horizontal tubular vacuum heating furnace, a crystal growth crucible and a horizontal moving system, and a crystal growth cavity is formed in the horizontal tubular vacuum heating furnace; the crystal growth crucible is obliquely located in the crystal growth cavity, a high-temperature heating area, a temperature gradient area and a low-temperature heating area are arranged outside the horizontal pipe type vacuum heating furnace in the axial direction at intervals, and the crystal growth crucible is designed to be of a double-layer quartz structure. According to the improved device for growing the large-size organic single crystal by the horizontal Bridgman method and the preparation method of the improved device, traditional equipment for growing the single crystal by the horizontal Bridgman method is improved, so that the problems of volatility control, thermal stress elimination and uniformity regulation and control in the growth of the organic single crystal are effectively solved; and an innovative solution is provided for industrial preparation of the photoelectric functional crystal material.

The invention discloses a device and method for growing gallium oxide single crystals through a vertical Bridgman method, the device comprises a furnace body, the furnace body comprises a heat preservation layer, a heater, a corundum cavity assembly and a lifting assembly, the corundum cavity assembly is arranged in the furnace body, the interior of the furnace body is divided into an independent crystal growth cavity and an independent heating cavity by a corundum crucible, and the lifting assembly is arranged in the furnace body. An inner cavity of the corundum crucible is a crystal growth cavity, a heating cavity is formed between the outer side face of the corundum crucible and the heat preservation layer, the heater is installed in the heating cavity, gas of different flows can be introduced in the actual growth process, the pressure difference of the multi-cavity structure is controlled, carbon dioxide gas is prevented from escaping at the high temperature, the graphite resistance heater is protected, and the service life of the graphite resistance heater is prolonged. The crystal quality is improved, and the crystal growth cost is reduced.

The invention discloses a mid-infrared three-wavelength laser crystal material and a preparation method and application thereof, and belongs to the field of inorganic functional crystal materials. The chemical formula of the intermediate infrared three-wavelength laser crystal material is KDyYGdF10. And the crystal is grown by adopting a Bridgman method. The laser crystal material has ultra-wide-band absorption and emission performance, can realize light emission in the middle-infrared band of 2500-3300 nm and the middle-infrared band of 4100-4400 nm under pumping of 1277 nm, and has peak wavelengths of 2849 nm, 4235 nm and 4273 nm respectively. The laser crystal material has the characteristics of low phonon energy, low melting point, same-component melting and the like, the absorption wavelength of the laser crystal material is matched with that of a commercial Nd: YAG laser pumping source, the absorption peak intensity is high, the absorption of pump light by the crystal is facilitated, so that fluorescence emission with peak wavelengths of 2849 nm, 4235 nm and 4273 nm in a middle-infrared band is realized, and the laser crystal material is a middle-infrared laser crystal material with great application potential.

This invention discloses a large-size, high-quality magnetic Weyl half-metal Co3Sn2S2 single crystal and its preparation method. The single crystal has a diameter greater than 1 cm and a length greater than 5 cm, exhibiting high quality, a complete and crack-free appearance, and a smooth surface. X-ray rocking curve analysis confirmed its high quality. l The full width at half maximum (FWHM) of the diffraction peaks is only 0.02°. Furthermore, this crystal exhibits ferromagnetism and a Curie temperature of [missing value]. T c =174 K, exhibiting a significant anomalous Hall effect: the maximum anomalous Hall conductivity is approximately 1250 S / cm, and the anomalous Hall angle is 25%. The preparation method includes controlling the molar ratio of raw materials to synthesize polycrystalline raw materials through a high-temperature solid-state reaction; further, using a modified Bridgman process, optimizing the temperature gradient, controlling the growth rate, rotation rate, and vacuum sealing environment, ultimately preparing a Co3Sn2S2 single crystal. The Co3Sn2S2 single crystal of this invention can be used in novel low-power spintronic devices, topological thermoelectric devices, etc., providing a key material foundation for the practical research of magnetic Weyl half-metals.

The invention relates to the field of II-VI group compound semiconductor material preparation, and discloses a preparation method of a polycompound semiconductor crystal, the polycompound semiconductor crystal is a selenium tellurium magnesium cadmium crystal, the chemical formula is Cd < 0.95 > Mg < 0.05 > Te < 1-x > Se < x >, the preparation method sequentially comprises the following steps: synthesizing a selenium tellurium magnesium cadmium polycrystal material by a high-temperature melting method, carrying out crystal growth by a vertical Bridgman method, and carrying out in-situ annealing treatment. The preparation raw materials comprise basic raw materials of Cd, Mg, Te and Se which are proportioned according to the stoichiometric ratio of Cd0. 95Mg0. 05Te1-xSex, excessive Te is added on the basis of the basic raw materials, and the In element is doped. The selenium tellurium magnesium cadmium single crystal is grown by adopting a three-temperature-zone crystal growth furnace in combination with a vertical Bridgman method, so that the temperature gradient can be accurately regulated and controlled, a smoother solid-liquid interface can be formed, the generation of defects such as dislocation, twin crystal and inclusion in the crystal is effectively reduced, meanwhile, the thermal stress in the crystal growth process is reduced, and the crystal quality is improved. The mechanical stability of the crystal is improved.

The invention discloses an intermediate infrared laser crystal material and a preparation method and application thereof, and belongs to the field of inorganic optical function crystal materials. The chemical formula of the intermediate infrared laser crystal material is KHoLuGdF10. And the crystal is grown by adopting a gradient-variable Bridgman method. The crystal is an excellent laser host crystal, 451 nm pumping is adopted, ultra-wideband fluorescence emission is generated in the wave band of 3850-4150 nm, the peak wavelength is 3980 nm, and the laser crystal material can be used for generating broadband mid-infrared laser.

The present invention belongs to the field of material preparation technology, specifically relating to a large-sized SnSb2Te4 single crystal and its growth method. The present invention provides an improved Bridgman method. This method first weighs appropriate Sn, Sb, and Te particles in an inert gas environment. A temperature ramp is then established. Specifically, the temperature is slowly raised to a first temperature at room temperature at a first rate and held at this temperature for 150 to 200 minutes. Subsequently, the temperature is slowly raised to a second temperature at a second rate. Subsequently, the temperature is lowered to a third temperature at a third rate and held at this temperature for 60 to 180 minutes. The crucible containing the materials is then lowered in a stepwise manner. This method can produce high-quality, large-sized SnSb2Te4 single crystals.