Gallium oxide crystal and growth method and growth device thereof

A growth method and crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high price, high melting point, high hardness, etc., and achieve the goal of reducing growth cost, avoiding adhesion, and improving quality Effect

Active Publication Date: 2019-11-22
昆明先导新材料科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high price of iridium crucible, high melting point, high hardness and difficult processing, the development and industrial production of gallium oxide crystals are also limited.
At the same time, at high

Method used

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  • Gallium oxide crystal and growth method and growth device thereof
  • Gallium oxide crystal and growth method and growth device thereof
  • Gallium oxide crystal and growth method and growth device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] This embodiment 1 provides a growth device for gallium oxide crystals, such as Figure 1~4 As shown, it includes a growth furnace 1, a crucible 2, a heater 3 and a transmission device. Wherein, the crucible 2 is a boat-shaped PBN crucible, and one end of the crucible 2 is provided with a seed crystal tank 4 . During crystal growth, the crucible 2 is placed in the growth furnace 1 and heated by the heater 3 to raise the temperature, and the transmission device is used to drive the crucible 2 or the heater 3 to move horizontally. In addition, the heating method of the growth furnace is medium frequency induction or resistance heating. The growth device of this embodiment mainly involves improving the structure of the crucible, and the growth furnace adopts an existing crystal growth furnace, which is provided with a heater capable of heating the crucible and a transmission device for driving the crucible or the heater to move horizontally. Those skilled in the art shoul...

Embodiment 2

[0033] The gallium oxide crystal growth device of Example 1 is used to prepare gallium oxide crystals. The heating method of the growth furnace is medium-frequency induction heating. The specific operation is as follows: 1 kg of gallium oxide raw material and 5 kg of gallium are loaded into a PBN crucible, and placed in a seed crystal tank. into the gallium oxide seed crystal. Put the PBN crucible into the growth furnace, and evacuate the growth furnace to 10 -5 Pa, filled with high-purity argon as a protective gas. Raise the temperature to 1740°C, melt the gallium oxide raw material, make the gallium oxide melt contact with the seed crystal, and complete the seeding. Move the PBN crucible horizontally along the direction of the seed crystal to start crystal growth, and the horizontal moving speed of the PBN crucible is 0.5mm / h. After the crystal growth is finished, open the furnace door, take out the PBN crucible and cool it down, then heat the PBN crucible to 35°C in an ov...

Embodiment 3

[0036] The gallium oxide crystal growth device of Example 1 is used to prepare gallium oxide crystals. The heating method of the growth furnace is medium-frequency induction heating. The specific operation is as follows: 3 kg of gallium oxide raw material and 3 kg of gallium are loaded into a PBN crucible, and placed in a seed crystal tank. into the gallium oxide seed crystal. Put the PBN crucible into the growth furnace, and evacuate the growth furnace to 10 -5 Pa, filled with high-purity argon as a protective gas. Raise the temperature to 1740°C, melt the gallium oxide raw material, make the gallium oxide melt contact with the seed crystal, and complete the seeding. Move the heater horizontally along the direction away from the seed crystal to start crystal growth, and the horizontal moving speed of the heater is 10mm / h. After the crystal growth is finished, open the furnace door, take out the PBN crucible and cool it down, then use an oven to heat the PBN crucible to 50°C...

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PUM

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Abstract

The invention discloses a growth method of gallium oxide crystals, which is a horizontal Bridgman method and specifically comprises the following steps: (1) putting gallium and gallium oxide into a crucible, and putting gallium oxide seed crystals into a seed crystal tank of the crucible; (2) putting the crucible into a growth furnace, vacuumizing the growth furnace, introducing inert gas, and heating the crucible to melt gallium oxide, so that the gallium oxide melt is in contact with the seed crystal; (3) after the gallium oxide is completely melted, sequentially carrying out crystal growthprocesses of seed introducing, shoulder forming and isometric growth; and (4) after the crystal growth is finished, cooling the crystal, and taking out the gallium oxide crystal. According to the invention, gallium and gallium oxide are put into the crucible, and gallium oxide floats on a gallium solution and is separated from the crucible in the crystal growth process, so that generated crystalsare prevented from being adhered to the crucible, the quality of the crystals is improved, and the crystals are easy to take out. Due to the existence of gallium, oxygen released in the growth processof the gallium oxide crystal can be absorbed to generate gallium oxide, impurities cannot be introduced, and the crucible is protected from being oxidized.

Description

technical field [0001] The invention relates to the technical field of wide bandgap semiconductor crystals, in particular to a gallium oxide crystal, a growth method and a growth device thereof. Background technique [0002] Gallium oxide crystal is a wide bandgap semiconductor with direct bandgap, its bandgap width is about 4.8-4.9eV, it is transparent in the deep ultraviolet to infrared region, and it is the only wide bandgap semiconductor crystal that can be melted grown crystals. Gallium oxide crystals have many advantages such as wide band gap, high thermal conductivity, high breakdown field strength, fast saturation electron drift and stable chemical properties, and are widely used in high-voltage and high-power devices and other fields. [0003] At present, the preparation methods of gallium oxide crystal mainly include pulling method and guided mode method. Among them, large-sized gallium oxide crystals are mostly grown by the guided mode method. Gallium oxide cry...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/16
CPCC30B11/002C30B29/16
Inventor 狄聚青朱刘刘运连黄幸蔚薛帅崔博
Owner 昆明先导新材料科技有限责任公司
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