Gallium oxide crystal and growth method and growth device thereof

Abstract

The invention discloses a growth method of gallium oxide crystals, which is a horizontal Bridgman method and specifically comprises the following steps: (1) putting gallium and gallium oxide into a crucible, and putting gallium oxide seed crystals into a seed crystal tank of the crucible; (2) putting the crucible into a growth furnace, vacuumizing the growth furnace, introducing inert gas, and heating the crucible to melt gallium oxide, so that the gallium oxide melt is in contact with the seed crystal; (3) after the gallium oxide is completely melted, sequentially carrying out crystal growthprocesses of seed introducing, shoulder forming and isometric growth; and (4) after the crystal growth is finished, cooling the crystal, and taking out the gallium oxide crystal. According to the invention, gallium and gallium oxide are put into the crucible, and gallium oxide floats on a gallium solution and is separated from the crucible in the crystal growth process, so that generated crystalsare prevented from being adhered to the crucible, the quality of the crystals is improved, and the crystals are easy to take out. Due to the existence of gallium, oxygen released in the growth processof the gallium oxide crystal can be absorbed to generate gallium oxide, impurities cannot be introduced, and the crucible is protected from being oxidized.

Description

technical field [0001] The invention relates to the technical field of wide bandgap semiconductor crystals, in particular to a gallium oxide crystal, a growth method and a growth device thereof. Background technique [0002] Gallium oxide crystal is a wide bandgap semiconductor with direct bandgap, its bandgap width is about 4.8-4.9eV, it is transparent in the deep ultraviolet to infrared region, and it is the only wide bandgap semiconductor crystal that can be melted grown crystals. Gallium oxide crystals have many advantages such as wide band gap, high thermal conductivity, high breakdown field strength, fast saturation electron drift and stable chemical properties, and are widely used in high-voltage and high-power devices and other fields. [0003] At present, the preparation methods of gallium oxide crystal mainly include pulling method and guided mode method. Among them, large-sized gallium oxide crystals are mostly grown by the guided mode method. Gallium oxide cry...

AI Technical Summary

Problems solved by technology

Due to the high price of iridium crucible, high melting point, high hardness and difficult processing, the development and industrial production of gallium oxide crystals are also limited.

At the same time, at high temperature, part of the iridium (Ir) metal will enter the gallium oxide melt and form fine iridium particles in the gallium oxide crystal, which seriously affects the performance of the grown gallium oxide crystal.

Images