Micro-pulling-down crystal growing furnace

A technology of a crystal growth furnace and a seed rod, which is applied in the field of micro-pulling crystal growth furnaces, can solve the problems of uneven temperature field control, inability to accurately adjust the temperature gradient, etc., and achieve stable internal temperature field, good observation effect, Easy-to-control effects

Inactive Publication Date: 2015-05-13
HUAZHONG UNIV OF SCI & TECH
View PDF9 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above defects or improvement needs of the prior art, the object of the present invention is to provide a micro-down pull crystal growth furnace, wherein by improving the structure of its key components and its arrangement, materials and internal structure, it is compatible with Compared with the existing technology, it can effectively solve the problem of uneven temperature field control of the existing micro-downward pull method crystal growth furnace and the inability to accurately adjust the temperature gradient at the crystal growth interface position, and the crystal growth furnace is provided with an observation window, which can Real-time crystal growth can be observed at any time to achieve the technical effect of adjusting crystal growth parameters in time, controlling crystal growth, and improving crystal yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-pulling-down crystal growing furnace
  • Micro-pulling-down crystal growing furnace
  • Micro-pulling-down crystal growing furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] figure 1 Shown is the structure diagram of the crystal growth furnace by pulling down slightly, in which: the outer insulating cover 1 and the outer insulating wall 5 are made of asbestos, the middle insulating cover 7, the middle insulating wall 8, the inner insulating layer 9 and the bottom insulation Layer 13 is made of zirconia and aluminum oxide with a mass ratio of 1:9 by pressing and calcining. The bottom insulation support 11 is made of tungsten; the central axis of the observation hole and the normal line of the top surface of the bottom insulation layer are at 45°.

[0034] figure 2 It is the top view of the crucible, the protruding design of the upper part of the crucible can make the crucible easily supported on the inner insulation layer. image 3 A schematic top view of the bottom insulation layer.

[0035] The inner thermal insulation layer can be used to support the crucible, which requires that the material of the inner thermal insulation layer not only has ...

Embodiment 2

[0040] The arrangement of the second embodiment is basically the same as that of the first embodiment. The difference between the two is that the bottom insulation support 11 uses molybdenum, and the central axis of the observation hole is 60° with the normal line of the top surface of the bottom insulation layer.

[0041] The arrangement of multiple water cooling pipes 12 is as Figure 4 As shown, 12-A has both a cooling water input port and a cooling water output port, and the input port and the output port are intersected (for example, if the first 12-A port is the cooling water input port, the second 12-A Port A is the cooling water output port, and the third 12-A port is the cooling water input port, and so on); correspondingly, 12-B has both cooling water input and output ports.

Embodiment 3

[0043] The configuration of the third embodiment is basically the same as that of the second embodiment. The difference between the two is that the bottom insulation support 11 is made of tungsten-molybdenum alloy; and, the outer insulation layer (including the outer insulation cover 1 and the outer insulation wall 5) and the middle insulation layer are removed (Including the middle insulation cover 7 and the middle insulation wall 8), it is possible to grow crystal materials with a low melting point. At this time, the internal heat insulation layer 9 can be arranged in a position parallel to the bottom of the crucible, and 3-6 observation holes can be evenly arranged, and the observation holes can be directly observed through the quartz round tube 2. The observation window in the bottom insulation layer 13 can be closed to improve the operability of the system.

[0044] An outer shell can also be arranged outside the micro-lifting crystal growth furnace to enhance the sealing ef...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a micro-pulling-down crystal growing furnace. The furnace comprises an upper heat-insulating layer and a bottom heat-insulating layer (13) which are arranged from top to bottom, wherein a tubular observation hole (4) is also formed in the bottom heat-insulating layer (13), and the included angle formed by the central axis of the observation hole (4) and the normal of the top surface of the bottom heat-insulating layer (13) is in a range of 45-60 degrees; each of an inner heat-insulating layer, a middle heat-insulating layer and the bottom heat-insulating layer (13) is formed by pressing and calcining zirconium oxide and aluminium oxide in the mass ratio of 1:9. According to the micro-pulling-down crystal growing furnace, the crystal growing condition of a crystal growing interface can be timely observed via the formed observation hole; besides, the effect caused by the observation hole on the temperature field of the crystal growing furnace is low, and the crystal growing yield can be further increased.

Description

Technical field [0001] The invention belongs to the field of crystal growth, and more specifically, relates to a micro-downward pulling crystal growth furnace. Background technique [0002] The micro pulling down method, that is, the Micro pulling down method, is a currently popular preparation technology for small-sized crystals, such as optical fiber single crystals. Due to its simple structure, extremely low consumption of raw materials, and easy operation, it is in the new It is widely used in the research and development of crystal materials. The raw materials are melted in the small crucible, and the molten liquid forms a thin layer on the bottom of the crucible under the combined action of gravity and surface tension. A seed crystal is installed on the top of the seed rod, and a cylindrical crystal with a diameter of less than 1 mm can be pulled down by contacting the thin layer with seeding techniques. However, due to the extremely thin melt layer, the flow caused by th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00
Inventor 方海生蒋志敏刘胜王梦莹张舟
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap