402results about "From melt solutions" patented technology

The invention discloses a series of alkali metal borate compounds and alkali metal borate crystals as well as a preparation method and application thereof, and belongs to the technical field of photoelectric functional crystal materials. The chemical general formula of the series of compounds and crystals thereof is A3RE (B3O6) 2, wherein A is K, Rb, Cs or NH4; rE = Sc and Y, the molecular weight is 355.93-744.48, the series of crystals belong to a trigonal system, the space group is P321, the cell parameters a = b = 10.5237 (13)-135237 (13), and # imgabs0 # Z = 3. The series of alkali metal borate compounds are synthesized by adopting a solid-phase reaction method or a hydrothermal method, and the series of crystals grow by adopting a high-temperature melt method or a hydrothermal method or a solution method. The series of materials can be used for manufacturing second harmonic generators, upper and lower frequency converters, optical parametric oscillators, polarizing prisms and the like.

A method for realizing single-crystalline regeneration of a spent positive electrode material by using a vacuum cracking method. The method comprises: fully mixing a spent polycrystalline ternary positive electrode material of a lithium ion battery with nickel stearate and a lithium salt, melting same, and then calcining same in vacuum so as to obtain a regenerated single-crystalline ternary positive electrode material. The present method not only compensates the loss of lithium of a spent single-crystalline ternary positive electrode material, but also converts insoluble residual Ni on the surface of the single-crystalline material during the "cracking" process of nickel stearate into LiNiO2 capable of providing discharge capacity, thus allowing the regenerated positive electrode material to exhibit more excellent electrochemical properties, and further reducing costs. The method is simple and easy to operate, and has modest requirements on regeneration reaction temperature, and while not needing long-time high-temperature calcination, the method can be used for simultaneously carrying out two processes polycrystalline cracking into single crystalline and lithium replenishment, thus involving low energy consumption, and being easy to popularize.

The invention discloses a method for preparing a gallium nitride nanowire array by a flux method. The method comprises the following steps: providing a liquid phase system of an alloy catalytic material containing Ga and a transition metal element with a catalytic property, and a Ga-Na liquid phase alloy; under the condition of isolating water and oxygen, enabling the liquid phase system to be in contact with the gallium nitride single crystal substrate, under the atmosphere of high-pressure nitrogen, enabling the metal sodium to dissociate nitrogen at high temperature, and realizing c-direction growth of the gallium nitride nanowire array on the gallium nitride single crystal substrate under the catalytic action of the alloy catalytic material. The preparation of the raw materials only needs to be completed at one time, the substrate does not need to be specially treated, only gallium, sodium, nickel and nitrogen are used as the raw materials, and the cost is low; compared with a traditional sodium fluxing agent method for growing gallium nitride single crystals, the method has the advantages that a sodium-gallium-transition metal melt liquid-phase system with the catalytic property of the sodium fluxing agent is utilized, and the high-density gallium nitride nanowire is innovatively prepared.

The present application provides a high-nickel single-crystal cathode material, a preparation method thereof, a cathode electrode sheet, a secondary battery, and an electrical device. The chemical formula of the high-nickel single-crystal cathode material is Li 1+δ Ni x M y Q 1‑x‑y O 2+ε A α R β X γ , 0.8 ≤ x < 1, 0 < y ≤ 0.2, 0 ≤ δ ≤ 0.15, 0 < ε ≤ 0.2, 0 < α ≤ 0.04, 0 < β ≤ 0.04, 0 ≤ γ ≤ 0.04. The M element and the Q element each independently include one or more of Mn, Co, Al, Ta, Ti, Nb, Ge, Y, Nb, W, Zr, Ce, Ca, Sr, Sc, V, Cr, and Mo; the A element includes one or more of Mg, Ca, Sr, Ba, Ti, Zr, V, Nb, Ta, Mo, W, La, Ce, Sc, and Cr; the R element includes one or more of B and P; the X element includes one or more of Na, K, Mn, Mg, Ca, Sr, and Al; the molar ratio of Ni 3+ on the surface of the high-nickel single-crystal cathode material is 38% - 55%, and the molar ratio of lattice oxygen on the surface is 7% - 15%. The structural defects of the material are significantly reduced, thereby improving its specific capacity and enhancing its cycling performance.

The invention discloses a low-resistance N-type gallium oxide crystal and a growth method thereof. The growth method comprises the following steps: pretreatment of raw materials: sintering a doped gallium oxide material block formed by mixing gallium oxide powder and doped raw material powder; crystal growth: heating the iraurita crucible to melt the doped gallium oxide material block, increasing the power of the medium-frequency induction coil to raise the temperature of the gallium oxide melt, keeping the temperature, cooling to the melting point of gallium oxide, keeping the melt state, firstly reducing the power of the medium-frequency induction coil to spontaneously nucleate at the cold core of the upper surface of the melt and realize the transverse growth of the nucleated crystal; reducing the power of the lower medium-frequency induction coil to enable the gallium oxide melt to grow from top to bottom until the gallium oxide melt completely grows into crystals; after crystal growth is finished, the temperature is reduced to 1200-1400 DEG C, heat preservation is conducted, cooling is conducted to the room temperature, and the low-resistance N-type gallium oxide crystals are obtained.The growth method is simple in process, the crystal growth speed is conveniently controlled, the crystal forming rate is increased, and large-scale mass production is achieved.

The invention provides a method for synthesizing a nanoscale single crystal lithium-rich manganese-based positive electrode material by a molten salt method. The method comprises the following steps: 1, sequentially pouring deionized water and a complexing agent aqueous solution into a continuous stirred tank reactor; 2, pumping a mixed metal salt solution of a nickel source, a cobalt source and a manganese source and a precipitator, continuously stirring at a certain temperature, aging, and carrying out suction filtration, washing and drying to obtain a carbonate precursor; and 3, mixing the carbonate precursor and a lithium source according to a certain stoichiometric ratio, adding molten salt, and calcining and washing the powdery mixture to obtain the nano-scale single-crystal lithium-rich manganese-based positive electrode material. According to the method, the nanoscale single crystal particles can be directly formed, so that the Li < + > diffusion distance is effectively shortened, the influence of a grain boundary on lithium ion diffusion is avoided, and the electrochemical reaction active area is increased; and the material also has a more favorable microstructure, and material structure deterioration caused by an electrochemical-mechanical effect in a battery cycle process is relieved.

The invention discloses a low ferromagnetic resonance linewidth BaFe12O19 single crystal and a preparation method thereof, and belongs to the technical field of magnet materials. According to the method, growth of the BaFe12O19 single crystal is realized mainly through multiple times of temperature rising and falling and multiple times of temperature oscillation. Compared with direct cooling, the single crystal grown by the method provided by the invention has higher Curie temperature and saturation magnetization and narrower ferromagnetic resonance line width. Through collaborative optimization of high Curie temperature, high saturation magnetization and low ferromagnetic resonance line width, the BaFe12O19 single crystal can be better applied to the frontier fields of high-frequency electronic devices, high-temperature permanent magnet systems, quantum technologies and the like. The improvement of the performance of the device can promote the development of the device in the directions of high frequency, miniaturization and high energy efficiency, and has strategic significance for new-generation communication, energy and information technologies.

The invention relates to a rare earth magnetic single crystal material and a preparation method and application thereof, the chemical formula of the rare earth magnetic single crystal material is HoAuSi2, the rare earth magnetic single crystal material has a hexagonal crystal system structure, the lattice constants of the rare earth magnetic single crystal material are a = b = 4.09 and c = 4.03, the electric transport shows metallic property, and the Curie temperature of the rare earth magnetic single crystal material is 8K. The rare earth magnetic single crystal material HoAuSi2 provided by the invention has a unique hexagonal system structure, and shows the Curie temperature of 8K and the resistance characteristic of metal behavior at low temperature; and a new possibility and a new research direction are provided for further exploring potential application of a novel functional material in the frontier fields of quantum calculation, low-temperature electronics, spintronics, novel magnetic sensors and the like.

The invention relates to the technical field of semiconductor crystal materials, and provides a low-thermal-conductivity Mg-Ag-Sb ternary compound single crystal material and a preparation method thereof. The preparation method comprises the following steps: a raw material weighing step: weighing Mg, Ag, Sb and Bi raw materials according to a set stoichiometric ratio; a packaging step: packaging the raw materials weighed in the raw material weighing step into a packaging container; a single crystal growth step: placing the packaging container in a temperature control device for temperature control, completely melting the raw materials in the packaging container to form a melt, then cooling the melt, forming a crystal blank in the melt, and growing the crystal blank into a single crystal; and a centrifugation step: the temperature of the melt in the packaging container is reduced to a set range, the packaging container is placed in centrifugal equipment for centrifugal treatment, single crystals in the melt are separated, and the Mg-Ag-Sb ternary compound single crystal thermoelectric material is obtained. The preparation method is high in controllability, and the prepared material is high in purity and uniformity and extremely low in heat conductivity.

The present invention relates to the field of capacitor materials, and provides a high-performance single-layer ceramic capacitor material and a preparation method thereof. The material comprises surface-modified zirconium oxide whiskers, strontium titanate nanobelts, barium titanate nanoparticles, barium nitrate, tetraisopropyl titanate, tetramethylammonium hydroxide, ammonium polyacrylate, lanthanum oxide, niobium oxide, manganese dioxide, nano-silicon dioxide and an ethanol-water mixed solution. The zirconium oxide whiskers are modified with a KH-550 silane coupling agent to improve the dispersibility and interfacial bonding force of the reinforcing phase. The introduction of strontium titanate nanobelts optimizes the coherent interface of barium titanate / strontium titanate, and improves the dielectric properties and mechanical strength of the material. Ultrasonic dispersion, ball milling mixing, doping tape casting and gradient sintering processes are adopted to enable the material to achieve high density, low dielectric loss and excellent temperature stability. The present invention overcomes the deficiencies of existing single-layer ceramic capacitor materials in dielectric properties and mechanical strength, and is suitable for the field of high-reliability electronic component manufacturing.

The invention discloses an Mg / Nb / Al co-doped and coated single crystal LiNi0. 9Mn0. 1O2 positive electrode material, and the cycling stability is obviously enhanced. The formed high-entropy layer enables lattice oxygen to be highly reversible, precipitation and release of oxygen are effectively inhibited, formation of oxygen vacancies is slowed down, and transition metal ions are anchored. In the lithium removal / intercalation process, reversibility of H2-H3 phase change is improved, crystal face slippage is relieved, accumulation and release of anisotropic lattice strain are relieved, and Li < + > dynamic diffusion is promoted. Meanwhile, an Al2O3 / LiAlO2 interface formed on the surface induces formation of thin and stable CEI, HF attack and dissolution of metal ions are improved, and the material has rapid charging and discharging capacity and high-voltage stability. Therefore, the high-entropy single-crystal positive electrode material plays a crucial role in effectively improving the rate capability and the cycling stability of the ultrahigh-nickel cobalt-free negative electrode material.

The invention belongs to the technical field of crystal growth, and particularly relates to a P-type crystal, a liquid phase growth device and a liquid phase growth method. The P-type crystal comprises silicon carbide, the Al element doping concentration is larger than or equal to 5E19 cm <-3 >, the N element doping concentration is smaller than or equal to 1E19 cm <-3 >, the doping non-uniformity of the P-type crystal in the radial direction and the axial direction is smaller than 10%, and the resistivity is smaller than or equal to 0.1 omega.cm. The baffle is arranged in the liquid phase growth device, the evaporation space is reduced, effective internal circulation is achieved in the crucible, the outer water cooling shaft is arranged to provide the temperature gradient, evaporation is effectively inhibited, meanwhile, growth speed reduction caused by evaporation inhibition is avoided, and growth crystal doping and uniform distribution of resistivity are achieved.

The invention relates to a fluxing agent for gallium oxide crystal growth and a growth method. The fluxing agent for growth of the gallium oxide crystal comprises vanadium pentoxide or a mixture composed of vanadium pentoxide and boron oxide. The fluxing agent does not contain toxic and harmful components such as lead oxide and lead fluoride, gallium oxide crystals can grow at a moderate temperature, volatilization and decomposition reactions of gallium oxide during high-temperature growth are effectively inhibited, and component segregation of the crystals in the growth process is improved; the gallium oxide crystal has relatively low viscosity, is beneficial to solute transportation in a crystal growth process, and can effectively reduce or even eliminate inclusion defects in the gallium oxide crystal; the method has a wide crystallization temperature interval, can improve the stability of crystal growth, and is beneficial to obtaining large-size and high-quality gallium oxide crystals.

The present invention belongs to the technical field of two-dimensional material preparation, and relates to a preparation method and application of a two-dimensional molybdenum disulfide material. Using molybdenum source and sulfur powder as raw materials, and inert gas as carrier gas, the raw materials are transported to the molten glass surface through an intermediate evaporation process to be deposited as solid molybdenum sulfide, and in the subsequent etching-spreading-sulfurization-precipitation process, an ultra-high-quality and ultra-large-area molybdenum disulfide single crystal domain grown at normal pressure and without hydrogenation is obtained. The single crystal domain size of the prepared two-dimensional molybdenum disulfide material can reach 1.5 cm, and then grow into a wafer-level two-dimensional molybdenum disulfide material with a size of 2 inches, and the thickness can be 1-2 layers.

The invention discloses a method for preparing hexagonal boron nitride by adding seed crystals, and relates to the field of boron nitride materials, the hexagonal boron nitride with two scales of nanoscale and micron scale is prepared at a relatively low temperature of 1100-1600 DEG C by adopting a molten salt method and adding the seed crystals, and the method has important significance for producing high-quality h-BN single crystals with different sizes. The operation difficulty is low, the energy consumption is low, the cost is saved, and large-scale production is easy.

The invention provides a crystal pulling method for reducing the head resistivity of a heavily arsenic-doped silicon single crystal, and belongs to the technical field of doped silicon single crystal production. Comprising the following steps: S1, sequentially carrying out a primary doping process, a primary temperature testing process, a primary seeding process, a re-melting process, a supplementary doping process, a secondary temperature testing process, a secondary seeding process, a shouldering process and an equal-diameter process; s2, if NG appears in the guiding and releasing process or the equal-diameter process, re-melting the crystal bar and carrying out supplementary doping, and then sequentially carrying out a temperature testing process, a crystal guiding process, a shouldering process and an equal-diameter process; s3, when the sum of the first doping multiple and the supplementary doping multiple reaches the total doping multiple, supplementary doping is stopped. By controlling the doping interval time and the total doping multiple, the head resistivity can be reduced and controlled within the upper limit of the specification, and impurities can be doped more uniformly, so that the crystallization rate is increased, the drawing and discharging times are reduced, and the quality of the drawn monocrystalline silicon is ensured.

The invention relates to an M-type barium ferrite single crystal material and a preparation method and application thereof.The preparation method comprises the steps that metal source mixed powder and a fluxing agent are evenly mixed and subjected to primary sintering, and the metal source mixed powder comprises a barium source and an iron source; and carrying out secondary sintering on the obtained intermediate powder to obtain the M-type barium ferrite single crystal material. Wherein the secondary sintering comprises a heating stage, a heat preservation stage and a cooling stage, and the cooling stage comprises first-stage cooling, second-stage cooling and third-stage cooling which are sequentially carried out. According to the invention, the fluxing agent and the raw materials are added to form a eutectic system, melting can be realized at a temperature far lower than the melting point of the raw materials, and the cooling process is accurately controlled to slowly separate out the target M-type barium ferrite single crystal from the supersaturated molten liquid and reduce thermal stress and defects, so that the M-type barium ferrite single crystal material with high integrity and high purity is obtained. And moreover, the preparation method disclosed by the invention is simple, low in cost and easy for large-scale industrial production.

The invention discloses a method for low-temperature synthesis of an ultra-high nickel single crystal positive electrode material based on a molten salt fluxing agent method, which comprises the following steps: mixing an ultra-high nickel precursor with the nickel content of more than or equal to 90% with a lithium source according to a stoichiometric ratio, then adding a certain mass of sodium chloride (NaCl) as a fluxing agent medium, and fully grinding; the mixed material is subjected to temperature programming sintering in an oxygen-containing atmosphere, and the highest sintering temperature is controlled between 700 DEG C and 850 DEG C; and cooling, washing, drying and sieving the sintered product to finally obtain the small-size ultrahigh-nickel single-crystal positive electrode material with good dispersity. By introducing the low-melting-point molten salt fluxing agent, the growth temperature of the single crystal is remarkably reduced, lithium volatilization and abnormal growth and agglomeration of crystal grains are effectively inhibited, and the obtained single crystal particles are uniform in size (2 microns) and have a good layered structure and electrochemical performance. The method is simple in process, low in cost and suitable for large-scale production of the ultrahigh-nickel single-crystal positive electrode material for the high-performance lithium ion battery.

The invention belongs to the technical field of silicon carbide crystal growth, and particularly relates to a low-defect-density silicon carbide crystal, a substrate, a growth device and a growth method. The small pits or cavities on the low-defect-density silicon carbide crystals are round or hexagonal under an optical microscope, and the diameter of the small pits or cavities is less than 10 microns; the number of the small pits or holes is smaller than or equal to 0.5 cm <-2 > within the radius range from the center of the crystal and the center of the substrate as the circle center to the wafer, and the number of the small pits or holes is smaller than or equal to 1 cm <-2 > in the annular area from the outside of the radius range to the edge of the wafer. The low-defect-density silicon carbide crystal provided by the invention is obtained through growth of the growth device provided with the partition plate, and the partition plate blocks contact between steam and the seed crystal in the heating stage, so that erosion damage of the steam to the seed crystal and formation of liquid drops on the surface of the seed crystal are prevented, and the defect that the silicon carbide crystal forms high density in the initial growth stage is avoided.

The invention provides a method for preparing a uranium dioxide single crystal by using a molten salt method and the obtained uranium dioxide single crystal, aiming at solving the problem that the growth of different crystal faces cannot be controlled when the uranium dioxide single crystal is prepared by using an existing fluxing agent method. The method comprises the following steps: in the presence of a reducing agent and a surface active substance, heating U3O8 powder in molten salt to a heat preservation temperature, preserving heat, and then cooling and growing to obtain the uranium dioxide single crystal, wherein the surface active substance is SiO2 (silicon dioxide), GeO2 (germanium dioxide), V2O5 (vanadium pentoxide) or Na2WO4 (titanium dioxide). According to the method, U3O8 is taken as a raw material, a molten salt fluxing agent is combined, the reducing agent is used for reducing U3O8 and growing the UO2 crystal, and the preferred crystal face of UO2 in the nucleation and growth processes is effectively controlled by selecting a proper surface active substance and changing the surface energy of UO2 in the nucleation and growth processes, so that the UO2 single crystal with the preferred crystal face and an ordered structure is obtained.

The invention discloses a high-quality P-type silicon carbide crystal and a silicon carbide substrate, and belongs to the technical field of silicon carbide material preparation. The density of bubbles or cavities in the 2 / 3 radius area of the silicon carbide crystal is lower than 0.1 / cm < 2 >, the diameter of a single bubble or cavity is smaller than 10 microns, the density of bubbles or cavities outside the 2 / 3 radius area of the silicon carbide crystal is lower than 1 / cm < 2 >, and the diameter of a single bubble or cavity is smaller than 100 microns. The overall bubble and cavity density of the silicon carbide crystal is lower than that of a P-type silicon carbide crystal prepared by an existing liquid phase method, the bubble or cavity density in the 2 / 3 radius area of the silicon carbide crystal is lower, the diameter is smaller, the crystal utilization rate can be increased, formation of microdefects is inhibited, and therefore the crystal quality is improved.

The invention discloses a method for growing a large-size CLBO crystal by using a new fluxing agent, and belongs to the field of nonlinear optical crystals. The adopted new fluxing agent is Cs2O-Li2O-B2O3-YF3, and the large-size CLBO crystal can be obtained through growth by a high-temperature solution top oriented seed crystal growth method. According to the novel fluxing agent, the solution viscosity can be effectively reduced, and crystal defects are reduced; and the grown large-size CLBO crystal has the advantages of high transmittance, strong deliquescence resistance and the like, and can be used as a frequency doubling device of an ultraviolet laser.

The invention relates to a novel second-order nonlinear optical crystal-potassium cadmium germanate (K4Cd3Ge4O13), and belongs to the field of optical crystal materials. The crystal is prepared by adopting a high-temperature solid-phase method and a high-temperature solution method, belongs to an orthorhombic crystal system and a C2 space group, is accurate in measurement of cell parameters, and shows excellent nonlinear optical characteristics and a wide light transmission range. The ultraviolet cut-off edge of the crystal is 261 nm, the infrared spectrum permeability is not obviously reduced in the range of 4000-714 cm <-1 >, the transmission range of the crystal can effectively cover a key atmosphere transmission window of 3-5 microns, and the crystal has powder frequency doubling response equivalent to that of a KDP crystal and can be applied to an all-solid-state laser as a mid-infrared nonlinear optical crystal.

Semiconductor substrate of a nitride of a group III element, comprising: a first surface; and a second surface where the distortion of a crystal plane of the first surface exhibits a multitude of extremes.

The application discloses a zinc oxide whisker heating furnace and a control method thereof, and belongs to the field of zinc oxide whisker production equipment. The zinc oxide whisker heating furnace comprises a furnace body, a whisker collecting groove and a lifting mechanism connected with a furnace cover. A zinc wire winding mechanism is rotatably connected to the furnace cover. The top end of a connecting rod of the whisker collecting groove is provided with a clamping groove, and the middle part is provided with an annular groove. A silicon carbide connecting rod is connected to the zinc wire winding mechanism, and the silicon carbide connecting rod is matched with the clamping groove. A rotating table is fixedly connected to a supporting frame. The rotating table is fixedly provided with a first electric telescopic mechanism extending towards the furnace body. The first electric telescopic mechanism is fixedly connected with a second electric telescopic mechanism. The second electric telescopic mechanism is connected with a clamping jaw matched with the annular groove. A controller is connected with the lifting mechanism, the rotating table, the first electric telescopic mechanism and the second electric telescopic mechanism. The scheme can realize automatic taking out and installation of the whisker collecting groove, and manual taking out with the aid of tools or waiting for the whisker collecting groove to cool down is not needed, so that the safety of zinc oxide whisker production is ensured.

The invention relates to the technical field of cold storage, and particularly discloses a cold storage material and a preparation method and application thereof. Wherein the cold storage material comprises a Gd2O2Se crystal. The cold storage material comprises the Gd2O2Se crystal, and the Gd2O2Se crystal has phase transformation near 6.22 K, has relatively large specific heat in a temperature range of 1-10 K, has a remarkable magnetothermal effect and can be used as a cold storage material at a liquid helium temperature.

A method for synthesizing a nitrogen-containing material includes mixing a nitrogen-containing lithiated precursor with at least one element other than lithium and nitrogen to yield a mixed composition, placing the mixed composition in an apparatus, supplying nitrogen gas into the apparatus, and heating the apparatus to an elevated temperature at an elevated pressure for a predetermined period of time to yield the nitrogen-containing material.

The invention belongs to the technical field of nonlinear optical crystals, and particularly relates to a zeolite-like structure nitrogen oxide silicate nonlinear optical crystal and a preparation method and application thereof, the chemical general formula of the crystal is Ba3Si3N5OCl, the crystal belongs to a hexagonal system, the cell parameters of the crystal are as follows: a is 9.5147 (6), c is 5.5002 (4), V is 431.22 (6) 3, Z is 2, the space group is P-62c, and the crystal has a non-centrosymmetric structure. The Ba3Si3N5OCl crystal provided by the invention is used as a novel zeolite-like structure nitrogen oxide silicate, successfully integrates nonlinear optical activity and phase matching capability, can generate frequency doubling response which is about 0.2 times of KDP (potassium dihydrogen phosphate) under 1064 nm laser pumping, and can realize phase matching, so that the Ba3Si3N5OCl crystal becomes a nonlinear optical material with practical device application potential.

The invention relates to the technical field of heat-insulating and demagnetizing refrigeration, and discloses a heat-insulating and demagnetizing refrigeration material based on a Trellis crystal lattice and a preparation method and application of the heat-insulating and demagnetizing refrigeration material. The chemical formula of the heat insulation and demagnetization refrigeration material based on the Trellis crystal lattice is Gd2GeB2O8. A magnetic test result of the Gd2GeB2O8 crystal shows that the magnetic anisotropy of the crystal material is relatively weak and tends to magnetic isotropy, and a long-range magnetic orderliness phenomenon is not observed above 1.8 K. And when adiabatic demagnetization is carried out under initial conditions that T is equal to 3K and B is equal to 7T, the material can reach the maximum negative magnetic entropy difference of 51.68 J * kg <-1 > * K <-1 >, which shows that the Gd2GeB2O8 has a better application prospect in a 3-17K temperature zone and a sub-Kelvin temperature zone.

The present invention relates to a method for growing a gallium oxide single crystal and an apparatus for growing a single crystal, and according to one aspect of the present invention, the method includes providing a gallium oxide raw material in a crucible containing iridium, injecting carbon dioxide so that a preset carbon dioxide partial pressure is formed to suppress the loss of iridium, melting the gallium oxide raw material provided in the crucible, and producing a gallium oxide single crystal from the melt.