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11results about "Eutectic material solidification" patented technology

Spherical seed crystal, spherical seed crystal preparation method and mold shell structure for preparing single crystal blade

The invention provides a spherical seed crystal, a spherical seed crystal preparation method and a mold shell structure for preparing a single crystal blade, and relates to the technical field of single crystal blades. The preparation method of the spherical seed crystal comprises the following steps: S1, preparing a seed crystal string wax mold: preparing a plurality of spherical seed crystal monomer wax molds according to the size of the spherical seed crystal and combining the spherical seed crystal monomer wax molds into the seed crystal string wax mold; s2, a mold shell is prepared, specifically, a chassis wax mold, a crystal selector, a seed crystal string wax mold and a pouring gate are sequentially connected to form a group tree, and the mold shell is prepared; and S3, installing the calibrated initial seed crystal in the mold shell, drawing the seed crystal in a vacuum furnace at a constant speed to obtain a single crystal seed crystal bar generated by directional solidification, cooling, cleaning the shell, marking orientation, cutting and polishing to obtain the spherical seed crystal. According to the spherical seed crystal, the use efficiency of the seed crystal is improved, the universal adaptability of the seed crystal is greatly improved, the seed crystal is spherical, and the shape difference caused by cutting in a specific direction is avoided, so that the preparation of a wax mold and a mold shell is more unified and convenient.
Owner:CHENGDU AEROSPACE SUPERALLOY TECH CO LTD

Method for controlling wall thickness size of single-crystal conjoined guide blade

The invention relates to the technical field of high-temperature alloy investment precision casting, in particular to a method for controlling the wall thickness size of a single-crystal conjoined guide vane. According to the inclination angle of each guide blade in the wax mold combination scheme, a chaplet with the blade basin side and the blade back side different in thickness and with the thickness gradually changing from the air inlet side to the air outlet side is pasted on the blade core; the blade core pasted with the chaplet is put into a mold, wax mold pressing is completed through wax injection, wax mold inspection is conducted, and a wax mold with the wall thickness equal to the thickness of the chaplet is obtained; after blade mold core free end treatment is conducted on the wax mold, wax mold assembling is conducted according to the designed wax mold assembling scheme; and the qualified module is subjected to shell preparation, alloy directional solidification, shelling, core removal and heat treatment to obtain the single-crystal conjoined guide vane casting with the qualified wall thickness size. According to the method, the wall thickness size precision of the casting can be effectively improved, the wall thickness deviation caused in the alloy directional solidification process is reduced, and therefore the percent of pass of the single-crystal conjoined guide blade casting is greatly improved.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Method for growing semi-insulating gallium oxide crystal by using directional solidification method

The invention discloses a method for growing a semi-insulating gallium oxide crystal by using a casting method, which comprises the following steps: treatment of raw materials: putting gallium oxide powder and doped raw material powder into an iraurita crucible, heating to completely melt, increasing the power of a medium-frequency induction coil to increase the temperature of a gallium oxide melt, preserving heat, and cooling to the melting point of gallium oxide; crystal growth: opening an observation window, enabling low-temperature airflow to enter a thermal field area above the iraurita crucible for heat exchange, cooling a cold core on the upper surface of the gallium oxide melt to nucleate and crystallize, and reducing the power of a medium-frequency induction coil to enable the melt to grow from top to bottom until the melt completely grows into crystals; and performing in-situ heat treatment on the crystal: after the crystal growth is finished, closing the observation window, cooling to 1100-1400 DEG C, preserving heat for 2-5 hours, performing stress relief annealing, and cooling to room temperature to obtain the semi-insulating gallium oxide crystal. The method has the advantages that the large-size semi-insulating gallium oxide crystal can be grown by doping different metal elements, any crystal face can be cut, and the method is simple.
Owner:HANGZHOU GAREN SEMICON CO LTD

High-strength gold bonding wire and production process thereof

ActiveCN121620264AAfter-treatment detailsEutectic material solidificationCeriumSingle crystal
The invention relates to the technical field of gold bonding wires, in particular to a high-strength gold bonding wire and a production process thereof, and the production process comprises the following steps: weighing the following raw materials in percentage by weight: 0.002-0.003 wt% of copper, 0.001-0.002 wt% of magnesium, 0.0002-0.0008 wt% of calcium, 0.0005-0.002 wt% of palladium, 0.001-0.002 wt% of cerium-boron additive and the balance of gold; according to the gold bonding wire, copper, magnesium, calcium and other raw materials are blended, meanwhile, the cerium-boron additive is added for synergistic interaction, and the obtained gold bonding wire is remarkable in bonding strength, ductility and resistivity performance effect through smelting, single crystal continuous casting, infiltration treatment in wetting liquid, final multi-pass wire drawing and reheat regulation improvement treatment; meanwhile, the product is excellent in oxidation resistance and corrosion resistance, and the comprehensive coordination of the product is excellent.
Owner:FUJIAN QUANZHOU ZHONGXIN ZHILIAN SEMICON MATERIAL CO LTD

Method for producing a component having a deep black surface

One aspect of the invention relates to a method for manufacturing a black structure of a material (10) comprising at least two phases, of which at least one crystalline phase (1), and at least one other phase, called matrix (2), the method being characterized in that it comprises the following steps: - growing the material along a principal direction (Z) so that the at least one crystalline phase forms several rods aligned with each other and the matrix extends between the rods, - removing at least part of the matrix located between the rods of the at least one crystalline phase, - so as to form a comb-type material structure having rods and light-trapping cavities between said rods.
Owner:THE SWATCH GRP RES & DEVELONMENT LTD

Orthorhombic cspbi3 microwires for sensitive flexible high-resolution x-ray detectors

X-ray detectors are made by growing CsPbI3 on a treated surface of a conductive layer. Growth is controlled by increasing solvent concentration in the atmosphere in which the growth occurs. Columnar crystals grown in a plurality of wells extend between conductive surfaces at least one of which is pixelated to produce a columnar detector array.
Owner:UVIC INDUSTRY PARTNERSHIPS INC

Ultrasonic-assisted method for preparing single crystal alloy

The invention belongs to the technical field of single crystal alloy preparation, and particularly relates to an ultrasonic-assisted method for preparing a single crystal alloy. According to the method, an ultrasonic induced sound field and a flow field are introduced in the directional solidification process, the thickness of a solute boundary layer near a solidification interface is effectively regulated and controlled, controllable transformation of the high-temperature alloy from cellular crystals to steady-state dendritic crystals under the column crystal condition is successfully achieved, and the primary arm spacing of the dendritic crystals is remarkably refined. According to the method, the limitation of traditional directional solidification on the size of a solidification structure is broken through, a new technical path is provided for preparation of the high-performance high-temperature alloy, and the application performance of the metal material is comprehensively improved.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

High-strength bonding alloy wire and process for producing the same

ActiveCN121620264BAfter-treatment detailsEutectic material solidificationCeriumSingle crystal
The application relates to the technical field of bonding gold wires, in particular to a high-strength bonding gold wire and a production process thereof, which comprises the following steps: taking raw materials according to weight percentages: copper 0.002-0.003 wt%, magnesium 0.001-0.002 wt%, calcium 0.0002-0.0008 wt%, palladium 0.0005-0.002 wt%, cerium-boron additive 0.001-0.002 wt%, and the balance being gold. The bonding gold wire of the application adopts copper, magnesium, calcium and other raw materials to be blended, and cerium-boron additive is added to cooperate and synergize, then the bonding gold wire is subjected to melting, single-crystal continuous casting, immersion treatment in a lubricating liquid, multi-pass wire drawing, reheat adjustment and improvement treatment, and finally the bonding strength, elongation rate and resistivity performance of the obtained bonding gold wire are remarkably improved; meanwhile, the product is excellent in oxidation resistance and corrosion resistance, and the comprehensive coordination of the product is excellent.
Owner:FUJIAN QUANZHOU ZHONGXIN ZHILIAN SEMICON MATERIAL CO LTD