19results about "Eutectic material solidification" patented technology

The invention provides a spherical seed crystal, a spherical seed crystal preparation method and a mold shell structure for preparing a single crystal blade, and relates to the technical field of single crystal blades. The preparation method of the spherical seed crystal comprises the following steps: S1, preparing a seed crystal string wax mold: preparing a plurality of spherical seed crystal monomer wax molds according to the size of the spherical seed crystal and combining the spherical seed crystal monomer wax molds into the seed crystal string wax mold; s2, a mold shell is prepared, specifically, a chassis wax mold, a crystal selector, a seed crystal string wax mold and a pouring gate are sequentially connected to form a group tree, and the mold shell is prepared; and S3, installing the calibrated initial seed crystal in the mold shell, drawing the seed crystal in a vacuum furnace at a constant speed to obtain a single crystal seed crystal bar generated by directional solidification, cooling, cleaning the shell, marking orientation, cutting and polishing to obtain the spherical seed crystal. According to the spherical seed crystal, the use efficiency of the seed crystal is improved, the universal adaptability of the seed crystal is greatly improved, the seed crystal is spherical, and the shape difference caused by cutting in a specific direction is avoided, so that the preparation of a wax mold and a mold shell is more unified and convenient.

To provide a method for manufacturing a component having a dark surface. [Solution] One aspect of the present invention relates to a method for producing a black structure of a material (10) comprising at least two phases, each having at least one crystalline phase (1) and at least one other phase, wherein the method is: - The steps include: forming multiple rods in which at least one of the crystalline phases is aligned with one another, and growing the material in the principal direction (Z) such that the matrix extends between the rods; - The step of removing at least a portion of the matrix between rods of at least one crystalline phase to form a comb-shaped material structure having rods and light-confining cavities between the rods. It is characterized by including.

The invention discloses a preparation method of a transition metal ion doped eutectic crystal, and relates to the technical field of eutectic crystals. Doping the transition metal ions into the eutectic crystal for growth; wherein the transition metal ions are chromium ions or cobalt ions, and the eutectic crystal body is a binary eutectic crystal body Al2O3-Y3Al5O12 or a ternary eutectic crystal body Al2O3-Y3Al5O12-ZrO2; transition metal ion chromium or cobalt is doped in Al2O3-Y3Al5O12 or Al2O3-Y3Al5O12-ZrO2 to respectively form red and blue colored eutectic crystals, and the color gradient from light red and blue color to dark red and blue color is formed by regulating and controlling the ion concentration of chromium or cobalt.

The invention relates to the technical field of high-temperature alloy investment precision casting, in particular to a method for controlling the wall thickness size of a single-crystal conjoined guide vane. According to the inclination angle of each guide blade in the wax mold combination scheme, a chaplet with the blade basin side and the blade back side different in thickness and with the thickness gradually changing from the air inlet side to the air outlet side is pasted on the blade core; the blade core pasted with the chaplet is put into a mold, wax mold pressing is completed through wax injection, wax mold inspection is conducted, and a wax mold with the wall thickness equal to the thickness of the chaplet is obtained; after blade mold core free end treatment is conducted on the wax mold, wax mold assembling is conducted according to the designed wax mold assembling scheme; and the qualified module is subjected to shell preparation, alloy directional solidification, shelling, core removal and heat treatment to obtain the single-crystal conjoined guide vane casting with the qualified wall thickness size. According to the method, the wall thickness size precision of the casting can be effectively improved, the wall thickness deviation caused in the alloy directional solidification process is reduced, and therefore the percent of pass of the single-crystal conjoined guide blade casting is greatly improved.

To simplify a single crystal manufacturing method.SOLUTION: A single crystal manufacturing method comprises preparing a pedestal fitted with a seed crystal substrate for growing silicon carbide single crystal and a graphite crucible having a raw material housing space. The method includes: a crucible preparation process; a raw material feeding process of feeding carbon raw material and silicon raw material to be heated for synthesis into the raw material housing space; a heating preparation process of closing the graphite crucible with a lid with a graphite sheet arranged to partition off the raw material housing space and the space where the seed crystal substrate is arranged, and making heating preparations for the graphite crucible; and a heating process of heating the graphite crucible to heat and synthesize a silicon carbide precursor in the graphite crucible from the carbon raw material and the silicon raw material, and subliming the heat-synthesized silicon carbide precursor to grow the silicon carbide single crystal, the graphite sheet being thin enough to be opened in the middle of the heating process.SELECTED DRAWING: Figure 2A

The invention discloses a method for growing a semi-insulating gallium oxide crystal by using a casting method, which comprises the following steps: treatment of raw materials: putting gallium oxide powder and doped raw material powder into an iraurita crucible, heating to completely melt, increasing the power of a medium-frequency induction coil to increase the temperature of a gallium oxide melt, preserving heat, and cooling to the melting point of gallium oxide; crystal growth: opening an observation window, enabling low-temperature airflow to enter a thermal field area above the iraurita crucible for heat exchange, cooling a cold core on the upper surface of the gallium oxide melt to nucleate and crystallize, and reducing the power of a medium-frequency induction coil to enable the melt to grow from top to bottom until the melt completely grows into crystals; and performing in-situ heat treatment on the crystal: after the crystal growth is finished, closing the observation window, cooling to 1100-1400 DEG C, preserving heat for 2-5 hours, performing stress relief annealing, and cooling to room temperature to obtain the semi-insulating gallium oxide crystal. The method has the advantages that the large-size semi-insulating gallium oxide crystal can be grown by doping different metal elements, any crystal face can be cut, and the method is simple.

The invention relates to the technical field of gold bonding wires, in particular to a high-strength gold bonding wire and a production process thereof, and the production process comprises the following steps: weighing the following raw materials in percentage by weight: 0.002-0.003 wt% of copper, 0.001-0.002 wt% of magnesium, 0.0002-0.0008 wt% of calcium, 0.0005-0.002 wt% of palladium, 0.001-0.002 wt% of cerium-boron additive and the balance of gold; according to the gold bonding wire, copper, magnesium, calcium and other raw materials are blended, meanwhile, the cerium-boron additive is added for synergistic interaction, and the obtained gold bonding wire is remarkable in bonding strength, ductility and resistivity performance effect through smelting, single crystal continuous casting, infiltration treatment in wetting liquid, final multi-pass wire drawing and reheat regulation improvement treatment; meanwhile, the product is excellent in oxidation resistance and corrosion resistance, and the comprehensive coordination of the product is excellent.

A method for manufacturing a black structure of a material (10) including at least two phases, with at least one crystalline phase (1) and at least one other phase, referred to as the matrix (2). The steps include growing the material in a main direction (Z) so that the at least one crystalline phase forms a plurality of rods aligned with each other and the matrix extends between the rods; and removing at least part of the matrix between the rods of the at least one crystalline phase, so as to form a comb-type material structure with rods and light entrapment cavities between said rods.

One aspect of the invention relates to a method for manufacturing a black structure of a material (10) comprising at least two phases, of which at least one crystalline phase (1), and at least one other phase, called matrix (2), the method being characterized in that it comprises the following steps: - growing the material along a principal direction (Z) so that the at least one crystalline phase forms several rods aligned with each other and the matrix extends between the rods, - removing at least part of the matrix located between the rods of the at least one crystalline phase, - so as to form a comb-type material structure having rods and light-trapping cavities between said rods.

The subject of the invention is a method for obtaining eutectic material in the form of microspheres, characterised in that it comprises the following steps: (a) melting of a eutectic mixture of metal oxides of eutectic composition or of a eutectic mixture of metal oxide-metal composition in which the metal oxide constitutes the topological phase and the precipitating phase is the metal oxide or metal, which are prepared in molar proportions of 0.01-99.99% of the topological phase and 0.01-99.99% of the precipitating phase, in proportion to 100%; (b) Grinding the eutectic material of dielectric-dielectric or metal-dielectric eutectic material obtained in step (a) into powder; (c) Obtaining microspheres by rapid melting of the powder material, at 600-1700 °C in an atmosphere of nitrogen, argon or helium, or rapid crystallisation of droplets of previously melted powder material, at 600-2000 °C in an atmosphere of nitrogen, argon or helium.

X-ray detectors are made by growing CsPbI3 on a treated surface of a conductive layer. Growth is controlled by increasing solvent concentration in the atmosphere in which the growth occurs. Columnar crystals grown in a plurality of wells extend between conductive surfaces at least one of which is pixelated to produce a columnar detector array.

The utility model discloses a single-crystal blade directional solidification device, which relates to the technical field of single-crystal high-temperature alloy blades, and comprises a shell, a cooling area and at least two heating areas, the mold shell moves from the heating areas to the cooling area, all the heating areas are distributed in the moving direction of the mold shell, and every two adjacent heating areas are isolated through a first baffle, so that all the heating areas conduct heating independently; the cooling area and the heating area are isolated through a second baffle. According to the single crystal blade directional solidification device, even if a large-size blade is large in length and low in directional solidification speed, the heating time of the large-size blade at the high temperature can be remarkably shortened, the precision of the size and the shape of the blade is improved, the surface reaction of a shell and alloy is reduced, and meanwhile due to effective temperature control, the production efficiency is improved. High-temperature directional solidification at the solid-liquid front edge during solidification can be realized, and a temperature gradient is formed, so that the qualification rate of large-size blade single crystals is improved.

The present invention discloses a eutectic material based on a tetraaryl adamantane crystallization co - former, its preparation method, and its application in molecular eutectics and structure identification. The eutectic material of the present invention is a host - guest complex formed by a tetraaryl adamantane crystallization co - former and an oily guest molecule. The eutectic material is prepared by mixing the tetraaryl adamantane crystallization co - former, the oily guest molecule, and chlorobenzene, and heating the mixture on a heating plate to obtain a mixed solution; then placing the mixed solution in a constant - temperature water - bath device and controlling its temperature to decrease to room temperature along with the water - bath temperature, thereby obtaining the eutectic material based on the tetraaryl adamantane crystallization co - former. The eutectic material prepared by the present invention is a material with stable structure, and the preparation method is simple to operate and has good repeatability, providing a good basis for the application of this method in molecular eutectics and structure and absolute configuration identification.

One aspect of the invention relates to a method for producing a black structure of a material (10), said material (10) comprising at least two phases, namely at least one crystalline phase (1) and at least one further phase (2), referred to as a matrix, said method being characterized in that it comprises the following steps: growing said material in a main direction (Z); the at least one crystalline phase forms a plurality of bars aligned with each other and the matrix extends between the bars,-removing at least a portion of the matrix between the bars of the at least one crystalline phase to form a comb-shaped material structure having bars and light trapping cavities between the bars.

The present invention relates to a series of fluorine-containing rare earth borate compounds, a series of fluorine-containing rare earth borate nonlinear optical crystals, and their preparation methods and uses. The general crystal chemical formula of the series of compounds and their crystals is all A2REB3O6F2, where A = Rb, Cs, NH4, RE = Sc, Y, La, the molecular weight is 247.46 - 571.14, the series of crystals belong to the orthorhombic system, the space group is Amm2, the cell parameters are a = 2.7182(4)-4.9617(8) Å, b = 7.7013(5)-9.9742(6) Å, c = 10.2634(1)-12.904(3) Å, Z = 2, the series of fluorine-containing rare earth borate compounds are synthesized by a solid-state reaction method or a hydrothermal method, and the series of nonlinear optical crystals grow by a high-temperature melt method, a hydrothermal method or a solution method. The series of materials can be used in the manufacture of second harmonic generators, up and down frequency converters, optical parametric oscillators, etc.

The invention belongs to the technical field of single crystal alloy preparation, and particularly relates to an ultrasonic-assisted method for preparing a single crystal alloy. According to the method, an ultrasonic induced sound field and a flow field are introduced in the directional solidification process, the thickness of a solute boundary layer near a solidification interface is effectively regulated and controlled, controllable transformation of the high-temperature alloy from cellular crystals to steady-state dendritic crystals under the column crystal condition is successfully achieved, and the primary arm spacing of the dendritic crystals is remarkably refined. According to the method, the limitation of traditional directional solidification on the size of a solidification structure is broken through, a new technical path is provided for preparation of the high-performance high-temperature alloy, and the application performance of the metal material is comprehensively improved.

X-ray detectors are made by growing CsPbI3 on a treated surface of a conductive layer. Growth is controlled by increasing solvent concentration in the atmosphere in which the growth occurs. Columnar crystals grown in a plurality of wells extend between conductive surfaces at least one of which is pixelated to produce a columnar detector array.

The invention relates to the technical field of high-temperature alloy investment precision casting, and discloses a preparation method for accurately controlling the secondary orientation of a single-crystal high-temperature alloy bicrystal plate, which comprises the following steps: cutting two cylindrical seed crystals from a complete single-crystal test bar, and grinding and polishing the surfaces of the two cylindrical seed crystals; pressing a plurality of simple wax molds in a wax injection press, and combining and connecting the plurality of simple wax molds with the cylindrical seed crystals to obtain a double-crystal plate module structure; after coating, sand hanging and drying are conducted on the bicrystal plate module structure, dewaxing and roasting are conducted, and a bicrystal plate module shell is obtained; carrying out a directional solidification process on the double-crystal-plate module shell to obtain a double-crystal-plate sample; and determining the small-angle grain boundary angle of the double-crystal plate sample after macroscopic corrosion. According to the method, the secondary orientation angle of the small-angle grain boundary in the nickel-based single-crystal high-temperature alloy twin-crystal plate can be accurately controlled, so that the influence of the small-angle grain boundary on the performance of the nickel-based single-crystal high-temperature alloy under a certain service condition can be quantitatively evaluated, and the qualification rate of the single-crystal high-temperature alloy blade is improved.

The application relates to the technical field of bonding gold wires, in particular to a high-strength bonding gold wire and a production process thereof, which comprises the following steps: taking raw materials according to weight percentages: copper 0.002-0.003 wt%, magnesium 0.001-0.002 wt%, calcium 0.0002-0.0008 wt%, palladium 0.0005-0.002 wt%, cerium-boron additive 0.001-0.002 wt%, and the balance being gold. The bonding gold wire of the application adopts copper, magnesium, calcium and other raw materials to be blended, and cerium-boron additive is added to cooperate and synergize, then the bonding gold wire is subjected to melting, single-crystal continuous casting, immersion treatment in a lubricating liquid, multi-pass wire drawing, reheat adjustment and improvement treatment, and finally the bonding strength, elongation rate and resistivity performance of the obtained bonding gold wire are remarkably improved; meanwhile, the product is excellent in oxidation resistance and corrosion resistance, and the comprehensive coordination of the product is excellent.