The invention provides a method for measuring
diamond single crystal dislocation density by using
cathode fluorescence spectrometry, which can be applied to the technical field of
semiconductor material characterization and defect detection. According to the method, a colorimetric method based on
ultraviolet light intensity is used for reference and development, the idea of
single measurement and quantification of different peak position ratios is utilized, a decoupling framework of lossy calibration and lossless measurement is combined, at least five
diamond single crystal calibration samples with gradient distribution of
dislocation density are firstly selected, a
cathode fluorescence spectrum is collected under low temperature and high vacuum, and a
cathode fluorescence spectrum is obtained; extracting an A-band
luminescence peak integral intensity IA and a free
exciton luminescence peak integral intensity IFE related to
dislocation through multi-
peak fitting, and calculating a ratio R = IA / IFE; performing
oxyhydrogen dry etching on the calibration sample, and counting an
etching pit to obtain a surface dislocation density N; and performing
linear fitting by taking N as a
vertical coordinate and R as a horizontal coordinate to obtain a proportionality coefficient k. Collecting spectrums of a to-be-detected sample under the same condition, calculating a specific value R, and substituting the specific value R into the model N = k.R to quantitatively obtain the surface dislocation density of the to-be-detected sample.