44 results about "Cathodoluminescence" patented technology

An α-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

This invention discloses a method for identifying the origin of quartz based on multimodal signal fusion using scanning electron microscopy (SEM). It utilizes only one SEM equipped with an energy dispersive spectroscopy (EDS) probe, a cathodoluminescence (CAT) probe, and a backscattered electron diffraction (BSE) probe. By comprehensively employing multiple indicators, including the coefficient of variation of CL band width (a), the Al-Ti influence coefficient (b), the lattice orientation difference influence coefficient (c), and the relative gravity coefficient of inclusion type (d), the method determines whether a quartz sample is of hydrothermal or metamorphic origin. This invention achieves rapid and accurate identification of the origin of quartz.

The purpose of one aspect of the present invention is to provide a hexagonal boron nitride powder having high crystallinity and improved thermal conductivity of a resin. In order to solve the above-mentioned problem, one aspect of the present invention relates to a hexagonal boron nitride powder in which the ratio of the spectral intensity at a wavelength of 227 nm to the spectral intensity at a wavelength of 330 nm as measured by the cathodoluminescence (CL) method is 1.0 or more.

The invention belongs to the technical field of reliability analysis of devices, and particularly relates to a quantitative analysis method for migration characteristics of an indium component in an epitaxial wafer. Comprising the following steps: providing epitaxial wafers with consistent initial characteristics, and carrying out uniform cleavage; taking one small block as a reference sample, and performing external disturbance treatment on other small blocks; the method comprises the following steps: respectively carrying out non-destructive structure characterization treatment on a reference sample and a sample subjected to external disturbance treatment, including high-resolution X-ray diffraction test, photoluminescence and cathode fluorescence combined test and time-resolved photoluminescence spectrum measurement; comprising high-resolution transmission electron microscope and EDS energy spectrum combined imaging and secondary ion mass spectrum; finally, FP lasers are prepared respectively, and electrical characterization processing is carried out. And quantitatively analyzing the influence of indium component migration on the electrical properties of the FP laser according to the result. The method has the advantages that the migration of indium atoms is analyzed according to a method for changing the microstructure in the quantum well and changing the dynamic behavior of a carrier.

The present invention realizes a hexagonal boron nitride powder having a good thermal conductivity. This hexagonal boron nitride powder contains aggregated particles of primary particles, has an average particle size of 15-80 µm, and exhibits a ratio (second intensity / first intensity) of not more than 1.0 for a second intensity indicating the maximum emission intensity at a wavelength of 250-440 nm with respect to a first intensity indicating the maximum emission intensity at a wavelength of not more than 235 nm, when being subjected to a cathodoluminescence measurement. The average area circularity of the aggregated particles having an area circle equivalent diameter of 20-40 µm is 0.20-0.50.

The invention belongs to the technical field of scanning electron microscopes, and particularly relates to a scanning electron microscope sample preparation method applied to a wafer sample with poor conductivity, which comprises the following steps: cleaning the wafer sample; fixing the cleaned wafer sample on a loading disc of a spin coater, dropwise adding a conductive adhesive on the surface of the wafer sample, and uniformly coating the surface of the wafer sample with the conductive adhesive through spin coating of the spin coater to obtain a sample for observation of the scanning electron microscope; wherein the conductive adhesive is a polyaniline solution. By utilizing the method, the charge effect on the surface of the non-conductive wafer can be effectively eliminated, so that the non-conductive wafer has clear surface appearance under a scanning electron microscope, the initial state of the wafer sample can be reduced after the test is finished, and the original components and original properties of the sample are not changed, so that the subsequent process and test links are not influenced. In addition, the method has a smaller shielding effect on the CL light emitting amount of the wafer sample, and has a gain effect in a cathode fluorescence test link of the wafer sample.

The application provides a sample detection method, a detection device and a charged particle optical detection system. The sample detection method comprises the following steps: acquiring a surface topography image and cathodoluminescence data of a to-be-detected sample having a dark spot defect; extracting a region in which the cathodoluminescence intensity is lower than a set intensity threshold in each cathodoluminescence image to obtain a dark spot region; and determining failure information of the to-be-detected sample based on the surface topography image, the dark spot region, the corresponding electrical stress of the dark spot region and the corresponding time of the dark spot region. Through the application, dynamic defect detection of a blue-green laser chip is realized.

Provided is an AlN monocrystal substrate exhibiting a high transmittance (i.e., a low absorption constant) in the ultraviolet region (e.g., a wavelength of 265 nm). This AlN monocrystal substrate is composed of AlN monocrystals and measures at least 100 μm in thickness. In a cathodoluminescence (CL) spectrum measured at a temperature of 30K, the ratio IB / IA of the peak intensity IB observed at 270-370 nm to the peak intensity IA observed at 200-230 nm is less than 4300. When a Raman spectrum corresponding to a depth position relative to the surface of the AlN monocrystal substrate is acquired by laser Raman spectroscopy, the difference between the wave number at which the E2 H peak is given in the Raman spectrum at a position 40 μm deep from the surface of the AlN monocrystal substrate and the wave number at which the E2 H peak is given in the Raman spectrum at a position 5 μm deep from the surface of the AlN monocrystal substrate is 0.40 cm-1 or less.

This invention provides a method for determining the dislocation density of diamond single crystals using cathodoluminescence spectroscopy, which can be applied to the field of semiconductor material characterization and defect detection. This method draws upon and develops upon colorimetric methods based on ultraviolet light intensity, utilizing the idea of ​​single measurement and quantitative analysis based on different peak ratios. It also incorporates a decoupled architecture of "destructive calibration + non-destructive measurement." First, at least five diamond single crystal calibration samples with gradient dislocation densities are selected. Cathodoluminescence spectra are acquired under low temperature and high vacuum conditions. The integrated intensity I of the A-band emission peak related to dislocations is extracted through multi-peak fitting. A and the integral intensity I of the free exciton emission peak FE Calculate the ratio R=I A / I FE Subsequently, the calibration sample was subjected to hydrogen-oxygen dry etching, and the surface dislocation density N was obtained by statistically analyzing the etching pits. The proportionality coefficient k was obtained by linear fitting with N as the ordinate and R as the abscissa. For the sample to be tested, the spectrum was collected under the same conditions and the ratio R was calculated. Substituting this value into the model N=k·R, the surface dislocation density can be quantitatively obtained.

The present invention provides a method for measuring the oxygen concentration of an oxygen atomic layer of an epitaxial wafer in which the oxygen atomic layer and a single crystal silicon epitaxial layer on the oxygen atomic layer are formed on a silicon single crystal substrate. The method includes: creating in advance a calibration curve between the oxygen concentration of the oxygen atomic layer of an epitaxial wafer for a preliminary test and the band edge emission intensity of the epitaxial wafer for the preliminary test as determined by a photoluminescence method or a cathode luminescence method; and measuring the oxygen concentration of an oxygen atomic layer of an epitaxial wafer to be measured from the measurement result of the band edge emission intensity of the epitaxial wafer to be measured using the calibration curve. As a result, there is provided a method for measuring the oxygen concentration of an oxygen atomic layer in an epitaxial wafer in a stable and simple way in a non-destructive manner.

The invention discloses a gem and jade output and mineralization condition analysis method, and relates to the technical field of mineral exploration and mineral spectroscopy analysis. The method comprises the following steps: grading and sampling primary ore and secondary ore; performing high-pressure closed digestion and element analysis to obtain the content of a target element; calculating chemical mineralization indexes, establishing a spectrum and diffraction spectrum library, and extracting a characteristic peak area ratio as a spectroscopic standard variable; acquiring a cathode luminescence image and a spectrum and determining an intensity ratio; integrating a chemical metallogenic index, a spectroscopic standard variable, a cathode luminescence intensity ratio and a regional geological variable into a target feature vector, and modeling based on a machine learning model and an interpretation algorithm to obtain a metallogenic analysis model; and outputting a mineralization probability index and performing grading judgment according to a threshold value. According to the method, through multi-source geology-geochemistry-spectroscopy information fusion and machine learning modeling, the accuracy and efficiency of gem and jade metallogenic condition recognition and prospective area / target area judgment are improved.

The present invention discloses a method for rapidly determining the type of a tin deposit using cassiterite. The method comprises collecting cassiterite markers from the deposit, obtaining cathodoluminescence image characteristics, chronological characteristics from U-Pb dating, trace element characteristics, and Sn isotope characteristics of the markers, and determining the type of the tin deposit based on these characteristics. This method can directly invert the mineral geochemical characteristics of cassiterite to determine the deposit type, eliminating issues such as external interference and ambiguity in elemental analysis, and significantly improving the efficiency of mineral exploration.

A cathodoluminescence spectrometer is provided. The cathodoluminescence spectrometer (100) includes an electron gun (10), a mirror (20), a standard element (30), a detector (40), and a control device (50). The standard element (30) includes a first half mirror and a second half mirror. The second half mirror is disposed at a position facing the first half mirror. The first half mirror reflects a portion of cathodoluminescence (CL2) that has been converged by the mirror (20) and transmits a portion thereof. The second half mirror reflects a portion of cathodoluminescence that has been transmitted through the first half mirror and transmits a portion thereof. The first half mirror and the second half mirror cause cathodoluminescence between the first half mirror and the second half mirror to interfere, thereby causing cathodoluminescence (CL3) of a specific wavelength to be transmitted through the second half mirror. The detector (40) detects the intensity of cathodoluminescence (CL3) that has been transmitted through the second half mirror.

The invention discloses a novel Gd2O2S: Tb < 3 + >-coated CaF2 core / shell structure composite fluorescent material and a preparation method thereof. According to the composition of the material, Gd2O2S: Tb < 3 + > serves as a core, CaF2 is deposited on the surface of Gd2O2S: Tb < 3 + > fluorescent powder to serve as a shell, and the thickness of the shell is about 5-80 nm. The preparation technology of the fluorescent material comprises the following steps: preparing Gd2O2S: Tb < 3 + > fluorescent powder by a high-temperature solid-phase method, then adding the fluorescent powder into an absolute ethyl alcohol solution containing CaCl2 and NH4F, and heating and stirring for 3-4 hours in a water bath environment of 60-90 DEG C so as to finish coating treatment of CaF2. Finally, the Gd2O2S: Tb < 3 + > and CaF2 core / shell structure fluorescent material is successfully prepared through the steps of ultrasonic dispersion, deionized water washing, drying and the like. According to the Gd2O2S: Tb < 3 + > CaF2 core / shell structure fluorescent material prepared by the invention, the photoluminescence intensity and cathode ray luminescence intensity of Gd2O2S: Tb < 3 + > fluorescent powder are greatly improved.

The application provides a high-purity quartz raw material evaluation and purification process prediction method and system. The method collects fluid and mineral inclusion data, uses micron-level physical reference marks to realize cross-scale registration of cathodoluminescence and in-situ micro-area scanning, accurately quantifies lattice impurities and total content, calculates a weighted occurrence state index combined with impurity hazard factors, fuses mineralogical characteristics to construct a purification difficulty index, and finally inputs a process knowledge graph, matches historical data to deduce and generate predicted process parameters. The application breaks through the bottleneck of quantitatively evaluating lattice impurities, accurately quantifies and classifies the purification potential of raw materials, can predict the processing limit, intelligently recommends the optimal roasting and pickling scheme, replaces the traditional trial-and-error mode, significantly reduces the research and development cost and cycle, and improves the scientificity and stability of high-purity quartz production.

The invention belongs to the field of geological mineral exploration, and particularly relates to a method for indicating granite type uranium mineralization by using quartz elements and cathode luminescence characteristics, which comprises the following steps: step 1, collecting and selecting samples; step 2, sample preparation and chemical analysis; step 3, carrying out cathode luminescence CL analysis; and step 4, data processing and model construction. According to the method provided by the invention, through systematic analysis on the quartz sample, especially research on the trace element content and cathode luminescence structure characteristics of the quartz sample, geochemical indexes capable of effectively identifying and predicting the uranium mineralization area are established, and the efficiency and accuracy of granite type uranium deposit exploration can be effectively improved.

The invention discloses a carbonate U-Pb dating method and device, and the method comprises the steps: determining a carbonate to-be-detected region formed in a single period according to lithofacies and cathode luminescence results; performing line scanning analysis in the carbonate to-be-detected area, and determining a first area of the U content and the U / Pb ratio; performing surface scanning analysis in the first area to obtain surface scanning data; the surface scanning data are calculated, and the ratio of 208Pb / 238U to 207Pb / 235U is obtained; and screening and recombining the ratio data of the 208Pb / 238U and the 207Pb / 235U, and determining the age of the carbonate U-Pb.

An apparatus for collecting upstream and downstream transmission electron microscope (TEM) cathodoluminescence (CL) emitted from a sample exposed to an electron beam is described. A first fiber optic cable carries first CL light emitted from a first TEM sample surface into a spectrograph. A second fiber optic cable carries second CL light emitted from a second TEM sample surface into a spectrograph. The first and second fiber optic cables are positioned so that the spectrograph produces a first spectrum for the first fiber optic cable and a separate spectrum for the second fiber optic cable. The described embodiments allow for the collection of TEM CL data in a manner that allows the upstream and downstream TEM CL signals to be analyzed separately and simultaneously using an imaging spectrograph.

This invention provides a method for determining the controlling factors of cathodoluminescence intensity based on laser surface scanning. The method includes: sampling and preparing thin sections; observing and identifying key areas using polarizing microscopy and cathodoluminescence microscopy; in-situ laser surface scanning of micro-areas using LA-ICP-MS; combining the cathodoluminescence microscopy images with the LA-ICP-MS in-situ laser surface scanning imaging results to determine representative line segments and points; quantitatively correcting the elemental content using relative sensitivity factors to obtain the corrected elemental content at the representative line segments and points; obtaining the quantitative relationship between cathodoluminescence intensity and the type and content of elements, and determining the controlling factors of cathodoluminescence intensity. This method can obtain the quantitative relationship between the cathodoluminescence intensity of diagenetic minerals and the type and content of multiple elements, thereby determining the controlling factors of cathodoluminescence intensity. It has the advantages of simplicity, efficiency, and wide applicability.

The invention belongs to the technical field of single crystal material preparation, and provides a barium-magnesium bimetal boron nitride compound-based solvent (Ba-Mg DMB), which significantly improves the yield of hexagonal boron nitride (h-BN) single crystals under high temperature and high pressure (HPHT) conditions, and further improves the crystal quality. Compared with the yield of about 12% of a barium-based solvent, the yield of the Ba-Mg DMB solvent is increased by 4.8 times, and the stable yield of about 57.3% is achieved. Researches find that under the HPHT condition, the magnesium element in Ba-Mg DMB can effectively remove carbon and oxygen impurities, which plays a key role in promoting the obtaining of h-BN single crystals with excellent quality. The high-quality characteristic is verified through detailed characterization of Raman spectrum, X-ray diffraction, X-ray photoelectron spectroscopy and the like, and is particularly reflected in photoluminescence and cathode luminescence characteristics. Through the high carrier mobility shown in the single-layer graphene, it is directly proved that the h-BN single crystal derived from Ba-Mg DMB can be used as an ideal packaging material of a two-dimensional device.

A scanning electron microscope having an electron column positioned to direct an electron beam onto a sample the electron column having a vacuum enclosure; an electron source; and an electromagnetic objective lens positioned within the vacuum enclosure, the electromagnetic objective lens including a housing having an entry aperture at top surface thereof and an exit aperture at bottom thereof; an electromagnetic coil radially positioned within the housing; a light objective positioned within the housing and comprising a concave minor having a first axial aperture and a convex minor having a second axial aperture; an electron beam deflector positioned within the housing and comprising a first set of deflectors and a second set of deflectors positioned below the first set of deflectors, wherein the second set of deflectors is positioned below the first axial aperture and the first set of deflectors is positioned above the second set of deflectors.

The present invention provides a method, an apparatus, an electronic device and a storage medium for predicting the age of zircon. The method includes: collecting and organizing the cathodoluminescence (CL) images of zircon, where the zircon characteristic information in the CL images at least includes the growth zoning characteristics of zircon; performing prediction processing on the zircon CL images by using a preset target zircon age prediction model, and obtaining an age prediction result of zircon; the target zircon age prediction model includes a zoning extraction module, a multi-scale feature fusion module and an age prediction module, the zoning extraction module is used for extracting the growth zoning characteristics in the CL image information, the multi-scale feature fusion module is used for performing multi-scale feature extraction and fusion on the growth zoning characteristics to obtain multi-scale spatial information, and the age prediction module is used for obtaining a final zircon age prediction result based on the multi-scale spatial information.

The application provides a method for determining the content of aluminum impurities in alloy raw materials for smelting silicon-manganese deoxidized steel, and belongs to the technical field of iron and steel metallurgy. In the method, high-temperature laser confocal microscopy is used to float and gather inclusions in a steel sample to the surface of the sample; a cathodoluminescence instrument is used to obtain a cathodoluminescence image of the inclusions on the surface of the sample; and whether the content of aluminum impurities in the form of alloy impurities in the silicon-manganese deoxidized steel exceeds a threshold value affecting the performance of the steel is determined according to the gathering morphology of the inclusions and the color characteristics of the cathodoluminescence in the image. The method has good universality, can be applied to the determination of the quality of alloy raw materials for smelting silicon-manganese deoxidized steel, and can improve the accuracy of the determination of the content of aluminum in the alloy.

This invention belongs to the field of scanning electron microscopy and cathodoluminescence analysis technology, specifically relating to a method for determining the maximum uniform imaging range of a cathodoluminescence detector. This method is simple to operate and provides objective results in determining the maximum uniform imaging range of a cathodoluminescence detector. By calculating the standard deviation of image grayscale, this invention transforms the assessment of imaging uniformity from subjective judgment to objective data. The assessment results are accurate and reproducible, providing clear sample selection criteria, test locations, and data processing procedures. It is easy to promote and apply in laboratories. By determining the maximum uniform imaging range, it guides users to conduct large-field observations while ensuring image quality, effectively reducing analytical errors caused by imaging non-uniformity.

The invention provides a cathode fluorescence detection system and method based on a superconducting nanowire single-photon detector, and relates to the technical field of cathode fluorescence detection.The system comprises a cathode fluorescence spectrum processing unit used for receiving a cathode fluorescence CL signal generated by an electron microscope, preprocessing the CL signal and sending the preprocessed CL signal to an electron microscope; transmitting the processed signal to a superconducting nanowire single-photon detector for detection; the superconducting nanowire single-photon detector is used for detecting the processed signal and inputting the generated detection signal into the data acquisition and processing unit for post-processing; and the data acquisition and processing unit is used for post-processing the received detection signal and generating a processing result. According to the cathode fluorescence detection system and method based on the superconducting nanowire single-photon detector, the superconducting nanowire single-photon detector is applied to cathode fluorescence detection, so that the detection sensitivity, waveband coverage and detection time resolution of cathode fluorescence are greatly improved.

The application discloses a sample preparation method of a TEM sample and a method for detecting a single dislocation in a gallium nitride single crystal, and the sample preparation method comprises the following steps: performing SEM-CL scanning on a substrate sample surface containing a gallium nitride single crystal, and obtaining a first SEM image and a corresponding cathodoluminescence image; marking a target single dislocation from the first SEM image based on the cathodoluminescence image; marking a first target region where the target single dislocation is located in the first SEM image; performing SEM scanning on the first target region of the substrate sample surface, and obtaining a second SEM image of carbon deposition around the target single dislocation; performing scanning on the second SEM image by using FIB-SEM, and marking a second target region where the carbon deposition is located; and performing etching on the second target region of the substrate sample surface after the carbon deposition, so that a TEM sample is prepared. The single dislocation can be accurately positioned from the substrate sample containing the gallium nitride single crystal, the TEM sample containing the single dislocation is prepared, and then the dislocation type of the single dislocation is determined.

This application discloses a method for analyzing the occurrence and mineralization conditions of gemstones, relating to the fields of mineral exploration and mineral spectroscopic analysis. The method includes: graded sampling of primary and secondary ore deposits; high-pressure sealed digestion and elemental analysis to obtain the content of target elements; calculation of chemical mineralization indicators and establishment of a spectral and diffraction spectrum library, extracting characteristic peak area ratios as spectroscopic modeling variables; acquisition of cathodoluminescence images and spectra and determination of intensity ratios; integration of chemical mineralization indicators, spectroscopic modeling variables, cathodoluminescence intensity ratios, and regional geological variables into a target feature vector; modeling a mineralization analysis model based on machine learning models and interpretation algorithms; outputting a mineralization probability index and classifying it according to thresholds. This application improves the accuracy and efficiency of gemstone mineralization condition identification and prospective / target area determination by fusing multi-source geological, geochemical, and spectroscopic information and using machine learning modeling.

The invention provides a method for preparing a high-quality hexagonal boron nitride single crystal on the basis of high-temperature and high-pressure conditions, which comprises the following step: heating and pressurizing a strontium-based precursor and hexagonal boron nitride powder to prepare the hexagonal boron nitride single crystal. In the aspect of economic cost, strontium nitride has relatively low cost (30 RMB / g) which is only 1 / 10 of that of a barium nitride system. Therefore, compared with a Ba-BN system, the Sr-hBN system has a huge cost advantage. In the aspect of crystal quality, Raman characterization, X-ray diffraction spectrum, cathode luminescence spectrum and X-ray photoelectron spectroscopy characterization result analysis proves that the hexagonal boron nitride single crystal which is comparable to or even superior to that prepared by a barium nitride system is obtained by the method disclosed by the invention.

The present invention belongs to the research fields of geochemistry and structural geology, and discloses a stress gradient analysis method based on the directional change of brine inclusions in FIP. The present invention systematically collects and quantitatively analyzes the size, morphology and distribution characteristics of brine inclusions in FIP in different directions, constructs a stress gradient evolution model, and thus reveals the spatial variation of the local tectonic stress field. Compared with the traditional stress analysis method mainly based on macroscopic structures, the present invention focuses on the stress response behavior at the microscopic scale, combines various precise testing means such as microscopic observation, pressure measurement, and cathodoluminescence, and realizes the technical path of directly inverting the tectonic stress gradient from the microscopic structure. This method can be widely applied to geological research in tectonic environments such as fault zones and shear zones, provides a new technical means for crustal stress field analysis, and has important research value and broad application prospects.

The application discloses a kind of physical constraint optimization device, method and system based on semiconductor material defect in-situ monitoring, belongs to semiconductor epitaxial manufacturing technical field.The present application includes twin growth chamber, sample transmission component, in-situ cathodoluminescence monitoring unit, multi-source in-situ monitoring system, data collector and edge computing node.First chamber integrated CL unit is used for dynamic monitoring and process exploration, and second chamber is used for lag batch production.Edge computing node deploys physical constraint neural network and double-cavity collaborative control module, processes double-cavity data in real time and issues optimization instructions to deposition execution unit, and constructs millisecond-level closed-loop regulation and control link.By physical equation constraint and double-cavity timing cooperation, millisecond-level accurate regulation and control of low dislocation density epitaxial layer is realized, and traditional epitaxial process monitoring lag and pure AI model prediction distortion defects are effectively overcome.