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In-situ characterization method for nano wires

A nanowire and characterization technology, applied in the field of semiconductor material testing, can solve the problems of limiting the practicality of the method and the scarcity of TEM-CL in-situ characterization

Active Publication Date: 2012-07-04
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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Problems solved by technology

[0003] Although TEM-CL in situ characterization is very simple and efficient, TEM-CL in situ characterization is very rare in the world, which greatly limits the practicability of this method

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Embodiment Construction

[0010] The specific implementation of a nanowire in-situ characterization method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0011] figure 1 Shown is a flow chart of the steps of a nanowire in-situ characterization method provided by the present invention, including: step 100, providing a micro-grid; step 101, forming a conductive layer on the surface of the micro-grid; step 102, placing the nanowire on the surface of the conductive layer, and using an adhesive to fix the nanowire on the surface of the conductive layer; step 103, using a scanning electron microscope to select a single nanowire, photographing its specific shape and recording its size; step 104, using The cathodoluminescence testing device records the luminescent properties of different positions of the single nanowire, and uses the line scanning function of the cathodoluminescence testing device to calibrate a second mark on the single nanow...

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Abstract

The invention provides an in-situ characterization method utilizing SEM-CL (Scanning Electron Microscopy-Cathodoluminescence) and a TEM (Transmission Electron Microscope). The method comprises the following steps: 1) providing a micro grid; 2) forming a conducting layer on the surface of the micro grid; 3) placing nano wires on the surface of the conducting layer and fixing the nano wires on the surface of the conducting layer by utilizing an adhesive; 4) utilizing a scanning electronic microscope to select a single nano wire, shooting the specific morphology of the single nano wire and recording the size of the single nano wire; 5) utilizing a cathode fluorescence testing device to record the luminance of different positions of the single nano wire, and utilizing the line scanning function of the cathode fluorescence testing device to calibrate a second mark on the single nano wire; and 6) utilizing a transmission electron microscope to record the structural information of the second mark on the single nano wire. According to the invention, a special fine sampling and testing method is utilized, the structural information obtained by the TEM is directly related with the luminescence obtained by the SEM-CL, and a bridge between a nano structure of a material and the luminescence of the material is constructed.

Description

technical field [0001] The invention relates to the field of semiconductor material testing, in particular to a method for characterizing nanowires in situ by using a scanning electron microscope-cathode fluorescence testing device and a transmission electron microscope. Background technique [0002] With the development of nano-optoelectronic devices and the fabrication of photon-integrated prototype devices, it is particularly important to study the luminescent properties of single nanowires and the corresponding structural information. Microgate (lacey support films) is a special support film for electron microscopy to detect samples, especially the necessary supplies for the detection of nanomaterials. Researchers usually place samples directly on the microgrid for TEM observation. Transmission electron microscope or transmission electron microscope (hereinafter referred to as TEM), TEM is a very powerful tool for studying the nanostructure of materials, but due to the ...

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Application Information

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IPC IPC(8): G01N23/22
Inventor 王志高邱永鑫曾雄辉蔡德敏黄增立王建峰徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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