Method for preparing semi-conducting material nano structure aluminum nitride

Abstract

The invention discloses a method for quickly preparing a semiconductor material nano-belt, which comprises: firstly, grinding aluminum powder until the particle diameter is between 50 and 1,000 nanometers, and placing the ground powder into a reaction tube; secondly, blowing dried nitrogen into the reaction tube; and thirdly, heating the reaction tube, making aluminum react with the nitrogen at a temperature of between 700 and 1,200 DEG C, and collecting products in situ to obtain a large quantity of aluminum nitride nano-belts. The method uses the nitrogen instead of ammonia as a source to generate an aluminum nitride nano structure for the first time, and has short reaction time, low temperature, low cost and no environmental pollution. The nano structure has wider application scope due to the special shape. Compared with commercial aluminum nitride, nanophase materials prepared by the method have strong ultraviolet cathodoluminescence. The invention is a method for preparing the nanophase materials with great economic value and use value, and has wide market prospect.

Description

technical field [0001] The invention relates to a method for preparing semiconductor nanometer materials, in particular to a nanometer material for preparing aluminum nitride by using nitrogen gas as a nitrogen source. Background technique [0002] With the rapid development of electronic technology, the application range of nanomaterials is becoming wider and wider, among which nanobelts are the key materials for making nanodevices. The nanoribbon has a higher surface area ratio, and aluminum nitride has a band gap as high as 6.2ev and a large exciton binding energy, so the nanoribbon of aluminum nitride is used in elastic pulse wave sensors, nanomechanical resonators and field emission Diodes have good application prospects. At present, there are many methods for producing aluminum nitride nanomaterials, such as: chloride decomposition method, carbon high temperature reduction method, gas reduction nitriding method and vapor deposition method. Among them, the carbon high...

AI Technical Summary

Problems solved by technology

Among them, the carbon high-temperature reduction method requires a very high temperature; the meteorological deposition method has high requirements on the base for collecting the product, and cannot be formed in large quantities; the chloride decomposition method and the gas reduction nitriding method require ammonia as a nitrogen source. This kind of test has a certain risk, and also has great pollution to the environment.

Therefore, existing preparation methods all need very high production cost

Images