Systematic characterization method for relation between defects of photovoltaic detection materials and performance of devices

Abstract

The invention relates to a systematic characterization method for the relation between the defects of photovoltaic detection materials and the performance of devices, which includes the following steps: according to the variety and characteristics of a photovoltaic detection material, a test chip is designed and packaged to form a test sample; the photoelectric characteristics of the test sample are measured and characterized; on the same test sample, an electron beam-induced current / scanning electron microscope or cathodoluminescence / scanning electron microscope combination-combined method is used for carrying out the measurement, characterization and statistical analysis of performance-related defects; and according to the directly related test characterization result obtained in the previous step, systematic characterization is carried out on the relation between the defects of the material and the performance of the device. The systematic characterization method can prevent the problems of uncertainty and randomness existing in the relation between the performance of the device made from the material and the measured defects of the material.

Description

technical field [0001] The invention relates to the technical field of materials and devices in the fields of optoelectronics, infrared and semiconductor technology, and in particular to a systematic characterization method for photovoltaic detection of the correlation between material defects and device performance. Background technique [0002] So far, semiconductor materials of various systems have been widely used in many fields. In many application fields, people put forward higher and higher expectations for the function and performance of optoelectronic devices, which correspondingly put forward more and more stringent requirements for the composition, structure and quality of semiconductor materials. Take III-V compound semiconductors as an example: with the expansion of the requirements for the operating band of optoelectronic devices, a variety of lattice-mismatched epitaxial material systems have been widely used. The quality of the matching material system puts ...

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Problems solved by technology

These measurement methods themselves also have great limitations, and there are certain applicable conditions

In addition, these measurement methods are destructive, and only a batch of materials can be sampled, or a part of the same material can be sampled, so there is also a lot of correlation between the performance of these materials and the measured material defects. Large uncertainty and randomness affect the reliability of the conclusions obtained

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