614results about How to "Improve growth efficiency" patented technology

A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the susceptor and the tapered channel flow block. Gaseous species introduced are forced by the tapered channel block to flow toward the susceptor to enhance the efficiency of reactions between the gases species and a wafer on the susceptor.

It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.

The present invention relates to a method of manipulating the physiological state of algae cultured in raceway ponds by altering one or more environmental parameter to simulate algal bloom forming conditions and to raceway ponds suitable for culturing algae according to the present invention. The alteration of the one or more environmental parameters in a specifically timed manner can be used to induce and maintain synchronous cell division.

The invention discloses a microarc oxidation solution of a titanium alloy wear-resistant coating and application thereof. The microarc oxidation solution comprises solutes and a solvent, wherein the solutes are KOH, Na2SiO3, NaF, triethanolamine and Na2B407, and the solvent is deionized water. The microarc oxidation solution of the titanium alloy wear-resistant coating is used for carrying out the microarc oxidation on the surface of a titanium alloy sample so as to obtain the titanium alloy with the wear-resistant coating, i.e. the application comprises four steps of: the preparation of the microarc oxidation solution of the titanium alloy wear-resistant coating, the oil removing and washing of the surface of the titanium alloy sample, the microarc oxidation, and the washing and drying of the surface of the titanium alloy subjected to microarc oxidation. The microarc oxidation solution of the titanium alloy wear-resistant coating forms films quickly at higher voltage and current, thereby obviously improving the growth efficiency of an oxidation film; the wear-resistant coating formed after the microarc oxidation has high hardness of more than HV700; and the technology is superiorto the traditional microarc oxidation technology in terms of the growth efficiency of the coating and the hardness and abrasive resistance of the coating.

The invention provides a feed used for crayfish in growing period. The feed comprises following ingredients: corn flour, sorghum flour, rice powder, peanut powder, yeast powder, algae powder, fish meal, silkworm pupa powder, composite vitamin, composite multi mineral and a core additive. The core additive comprises common yam rhizome, radix astragali, radix polygoni multiflori, angelica sinensis, cordate houttuynia, motherwort, pericarpium citri reticulatae and licorice. The feed is capable of providing basic nutrient substances for crayfish in growing period, and promoting rapid growth of crayfish in growing period. The addition of algae powder and the core additive is capable of increasing growth efficiency of crayfish in growing period, and improving self immunity of crayfish in growing period. Mortality is reduced greatly, safety of the feed is high, raw materials are widely available, and cost is low.

The invention provides a preparation method of a carbon quantum dot fluorescent material. The method involves an ignitable plant leaf material, a combustion supporting substance, a solid fiber adsorption material layer, and a combustion furnace body. The method is characterized in that: the combustion furnace body is composed of an air inlet, a combustion chamber, and an exhaust gas outlet, and the solid fiber adsorption material layer is arranged at the exhaust gas outlet; when the plant leaf material combusts, the carbon quantum dot fluorescent material can be generated, is carried by gas and is adsorbed in the solid fiber adsorption material layer, when the solid fiber adsorption material is placed in water or a solvent, the carbon quantum dot fluorescent material can separate and precipitate out by itself. The method provided in the invention can directly use urban waste fallen leaves to prepare the carbon quantum dot fluorescent material and does not employ any chemical means to extract. The carbon quantum dot fluorescent material adsorbed in the solid fiber adsorption material layer is convenient for transportation and carrying, is pollution-free and nonhazardous, can be released by an aqueous solvent or static electricity, so that the carbon quantum dot fluorescent material can be taken out directly.

The invention relates to improvements in the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of a substrate comprising CO. It more particularly relates to the provision of an inorganic organic sulfur source to a fermentation system such that one or more micro-organisms convert a substrate comprising CO to alcohols. In a particular embodiment, a microbial culture is provided with sodium polysulfide, wherein a substrate comprising CO is converted to products including ethanol and 2,3-butanediol.

The invention discloses a method for growing silicon carbide mono-crystals through a multi-crucible physical vapor transport technology, and a device thereof. The device is characterized in that the multi-crucible growth technology is adopted in the growth process of the silicon carbide mono-crystals, two graphite crucibles arrayed in a top-bottom manner are simultaneously placed in the graphite heating unit of a hearth, the upper crucible is suspended on a lifting rod, the lower crucible is inversely placed on a falling rod, two seed crystals are positioned at two ends of the graphite heating unit in a low temperature zone, a raw material is positioned in the middle of the graphite heating unit in a high temperature zone, and the temperatures of the upper crucible and the lower crucible are determined by a master temperature controller and a secondary temperature controller. The silicon carbide crystals growing though adopting the method have the advantages of high production efficiency and low production cost, so the method is suitable for the large-scale growth of the mono-crystals.

The invention provides an AlGaInP system LED with the electron hole dual limitation and a preparation method thereof. An upper electrode, an ITO conductive light transmission layer, a GaP window layer, an upper limiting layer, an active region, a lower limiting layer, a Bragg reflecting layer, a buffer layer, a substrate and a lower electrode vertically and sequentially grow in a laminated way on a chip structure of the LED from top to bottom, wherein the ITO conductive light transmission layer extends from the GaP window layer to the upper surface of the upper limiting layer, and both sides of the Bragg reflecting layer are provided with oxidizing insulation regions. The preparation method comprises the following steps: (1) growing epitaxial materials; (2) etching current baffle regions; (3) carrying out vapor deposition on ITO transparent conductive films; (4) manufacturing the upper electrode and the lower electrode; (5) carrying out oxidization; and (6) separating pipe cores and carrying out encapsulation. The invention forms the Schottky contact with the upper limiting layer through the ITO transparent conductive films, so the current baffle layer is formed. The process is simple, the repetitiveness is high, and in addition, the cost is low, so the luminous efficiency and the light extraction efficiency of the LED are improved.

The invention discloses an intelligent WIFI household plantation automatic control system based on a mobile phone APP. The intelligent WIFI household plantation automatic control system includes a master control MCU, a sensor, a camera, a light supplement lamp, a relay, a household router, a cloud server, and the mobile phone APP, the sensor, the camera, and the light supplement lamp are arranged at the planted crops and are connected with the master control MCU, the master control MCU generates control orders based on the received environment variables and transmits the control orders to the light supplement lamp and the relay to respectively control illumination, water volume, and nutrient solution delivery, the household router is connected with the master control MCU, the cloud server is connected with the household router, the master control MCU uploads the received environment variables and the video data to the cloud server via the household router, and the mobile phone APP downloads the data via the cloud server. On the basis of the plantation requirement of different vegetables, the intelligent WIFI household plantation automatic control system inducts the current growth environment, controls the environment input, and realizes scientific plantation.

The invention discloses a preparation technique of a photosynthetic bacteria reagent, which comprises rhodopseudomonas palustris strain cultivation steps that include activated strain cultivation with an inclined plane, strain cultivation with a shaking table, cultivation with an aerated fermenting jar and the like, and adopts the culture medium comprising a basic culture medium and a growth promoting agent. The basic culture medium comprises following components by mass: 0.9 to 1.1 percent of glucose, 0.04 to 0.06 percent of carbamide, 0.02 to 0.03 percent of dipotassium hydrogen phosphate, 0.02 to 0.03 percent of monopotassium phosphate, 0.02 to 0.03 percent of magnesium sulfate, 0.20 to 0.30 percent of sodium chloride, 0.03 to 0.05 percent of calcium chloride and 98.40 to 98.77 percent of water. The added growth promoting agent is 0.10 to 0.30 percent of fulvic acid by mass referring to the basic culture medium. The photosynthetic bacteria reagent that is obtained by the preparation technique can reach the lysate concentration of 4000 to 6000 million per milliliter, and can be used in multiple fields of aquiculture, wastewater processing, crop production and the like.

The invention discloses a preparation method for a two-dimensional laminar heterojunction based on graphene. The preparation method includes the following steps that 1, hydrogen and carbon source gas are introduced into a reaction cavity with a metal substrate, and the reaction cavity is heated to make carbon dissolved in the metal substrate; 2, the carbon source gas is stopped from being introduced into the reaction cavity, and the reaction source is heated to grow on the metal substrate; 3, the temperature of the reaction cavity is reduced, carbon dissolved in the metal substrate is separated out and forms graphene, and then the two-dimensional laminar heterojunction based on graphene is obtained. According to the preparation method, a two-dimensional material like boron nitride or molybdenum disulfide is directly deposited on the surface of the transition metal substrate, and the thickness of graphene separated out at the low temperature is controlled with the carbon solubility difference of metal at different temperatures. By means of the preparation method, the growth efficiency is improved, the production cost is lowered, and impurities introduced in the preparation process are reduced.

The invention discloses a traditional herbal medicine feed addictive for preventing and controlling swine high fever syndrome, belonging to the technical field of feed addictives. The addictive is prepared from Chinese angelica, white paeony root, scutellaria, argy wormwood leaf, rhizoma atractylodis, hawthorn, magnolia officinalis, dried orange peel and liquorice as raw materials according to a certain weight part. By using the functions of enhancing the immunity of pigs, improving the success rate of vaccination and the like, the traditional herbal medicine feed addictive achieves the aims of improving the growth speed of commercial pigs and the conversion rate of the feed, reducing the death rate and the mortality of the pigs and improving economic benefits. The traditional herbal medicine feed addictive can be popularized and applied in pig farmers or farms.

The invention provides a nitride high-voltage device on silicon substrate and a manufacturing method thereof. According to the nitride high-voltage device on the silicon substrate, a high-voltage tolerance layer is led into a drain electrode region, and the thickness of a partial epitaxial layer is thickened to bear higher voltage reduction, so that high punch through voltage resistant device is achieved. Via the method of partial generation, the high punch through voltage resistant device is achieved, the problems of warping and chap of nitride epitaxial layer, which are caused by a whole material with over thickness, are avoided, therefore, material generation quality is ensured, material generation efficiency is improved, and the cost is lowered.

The invention provides a high-light-output bismuth silicate scintillation crystal. A bismuth silicate crystal is doped with Ta<5+> in the doping form of Ta2O5, doping quantity being 0.2-4 mol% / mol. The invention also provides a preparation method of the high-light-output bismuth silicate scintillation crystal. The preparation method includes the steps of: a) synthesizing a doped bismuth silicate polycrystal powder material through a solid phase sintering method, and compressing the doped bismuth silicate polycrystal powder material into compact cylindrical material bulks; b) fixing a seed crystal on a seed crystal position on the bottom of a crucible, and placing the polycrystal material bulks in the crucible and sealing the crucible, placing the crucible in a crystal growing furnace, and controlling temperature to be 1050-1200 DEG C, wherein the growth speed of the crystal is 0.2-0.6 mm / h. Because of doping of the Ta<5+>, light output of the BSO crystal is greatly increased. The preparation method achieves high-light-output and high-quality growth of the bismuth silicate monocrystal, is simple in technical equipment, can grow a plurality of crystal rods simultaneously, and greatly improves the growth efficiency and application of the bismuth silicate scintillation crystal.

The invention is broadly in the agricultural field, more precisely in the field of industrial plant growth facilities. In particular, the invention concerns an industrial plant growing facility (100) for growing a variety of plants using predetermined growth conditions. Also, the invention concerns methods for growing plants in industrial plant growth facilities (100).

The invention discloses a crystal pulling furnace with a replaceable furnace cavity. The crystal pulling furnace comprises the furnace cavity, a rotating pulling weighing unit, a heat-preservation heat field and a crucible. The heat-preservation heat field is arranged in the furnace cavity, the crucible is put into the heat-preservation heat field, the rotating pulling weighing unit is arranged on the furnace cavity, and a seed rod is arranged in the furnace cavity and connected with the a rotating pulling weighing unit; the furnace cavity comprises an upper flange disc, a lower flange disc and a cavity body, the cavity body is arranged between the upper flange disc and the lower flange disc, a heating device is arranged inside the cavity body or arranged on the periphery, and sealing devices are arranged between the cavity and the upper flange disc and the lower flange disc. A lifting device is arranged in the furnace cavity and fixed on the lower flange disc, and the heat-preservation heat field and the crucible are arranged on the lifting device. The crystal pulling furnace can be adjusted and replaced and can be suitable for growth of more size crystals, and is simple in structure, convenient to assemble and maintain and low in energy dissipation. In addition, the crucible can be located in the best temperature filed through lifting device, and the crystal growing efficiency and quality are improved.

The invention provides a method for growing gem crystals by way of vacuum induction heating and a device realizing the method. The method includes the following steps: an inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body is utilized to heat alumina material in a crucible until the alumina material is melted, the convection of the melt and the linear velocity of flow are observed, an appropriate seeding temperature is chosen by adjusting the relative positional relation between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body and the crucible,and after seeding, crystallization, equal-diameter growth and separation between crystals and the crucible, crystal growth is finished. An adjustable gap exists between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13), so that the relative positional relation between the inductivetungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13) can be adjusted. The method and the device canbe adopted to produce large-dimension sapphires, the process can be conveniently and automatically controlled, energy consumption is reduced, and the cost is saved.

The invention provides a feed for loach seedlings, the feed is composed of following components: corn flour, sorghum flour, paddy flour, fodder soybean grass flour, soybean protein flour, sunflower flour, fish flour, bone flour, composite vitamins, composite minerals and a core addictive, wherein the core addictive is composed of following components: Chinese yam rhizome, radix astragali, fleece-flower root, bitter organe, cordate houttuynia, fruit of negundo, garlic and licorice. The feed can provide basic nutrition materials for the loach seedlings, and can promote the loach seedlings to grow fast. The core addictive not only can improve the growing efficiency of the loaches seedlings, but also can provide self-immunities to the loaches seedlings. The feed has the advantages of high safety, wide raw material sources and low price.

A microbial fermentation bed large-fence pig house environment monitor system comprises a fermentation bed, a sensor unit, a PLC controller, a relay and an execution mechanism. The bottom surface of the fermentation bed is paved with a padding layer; the sensor unit comprises a temperature sensor, an air humidity sensor, a first padding humidity sensor, a carbon dioxide sensor and an ammonia gas sensor, wherein the temperature sensor, the air humidity sensor, the first padding humidity sensor, the carbon dioxide sensor and the ammonia gas sensor are connected with the PLC controller, and the first padding humidity sensor is arranged on the padding layer; the PLC controller is connected with the relay; and the execution mechanism comprises an aluminium alloy curtain, a draught fan water curtain, an axial flow fan, a sprinkler system and a spraying system, wherein the aluminium alloy curtain, the draught fan water curtain, the axial flow fan, the sprinkler system and the spraying system are connected with the relay. The monitor system helps to improve the growth efficiency and disease-resistant capability of pigs, reduce the feed consumption and solve the problem of pig manure pollution.

The invention discloses a device and method for preparing single crystal diamonds by laser enhanced plasma CVD. The device comprises plasma CVD equipment and laser equipment, wherein more than 1 set of laser equipment is respectively positioned on the outside of a cylindrical cavity of the plasma CVD equipment, laser emitted by the laser equipment can irradiate onto a substrate table positioned inthe cavity of the plasma CVD equipment; the substrate table is positioned in the middle of the cavity of the plasma CVD equipment, a cooling water circulation system is arranged at the lower part ofthe substrate table and comprises a cooling water inlet and a cooling water outlet; and a raw material gas inlet and an extraction opening are formed in the bottom of the cavity of the plasma CVD equipment. The method combines microwave energy (or electric energy) with laser energy and improves the energy of plasma and the gas dissociation rate in a diamond synthesizing process by using low-cost high-energy laser, thereby improving the synthetic rate of the diamonds and effectively solving the problem of high-speed mass preparation of diamonds.

The invention discloses a culture medium and a propagation method for tissue culture rapid propagation of leaves of heuchera micrantha. Through selection on an explants, selection on a basic culture medium and hormone combination in proper dosage, high-effective regeneration of a plant of the heuchera micrantha during the tissue culture is achieved. The propagation method is simple operation and low pollution rate, is high in success rate of regeneration of the plant, and is short in production period of grown-up seedlings.

A preparation method of stichopus japonicus fermented feed capable of replacing alga is prepared by taking water caltrop, hydrilla varticillata, water hyacinth, aggregation of grass, alfalfa and common seepweed herb as the alga replacing raw material and additionally adding four, sea mud, multi-vitamin, fish meal, mussel powder, bean pulp, earthworm powder and zeolite powder with the steps of: drying all materials till the water content is less than 12%, and crushing to be 60 meshes, so as to obtain a fermentation substrate; mixing water, brown sugar, table salt and flour, adding rhizopus, trichoderma, saccharomyces cerevisiae, bacillus subtilis and lactic acid bacteria, mixing uniformly, standing and fermenting for 2h, so as to obtain a feed fermenting bacteria solution; and inoculating the fermentation substrate according to the ratio of 0.4% to 0.5% at the environment temperature of 25 DEG C to 30 DEG C, carrying out solid fermentation, and then drying and crushing, thereby obtaining the stichopus japonicus fermented feed. The preparation method has the advantages that the raw material source is stable, the cost is low, the process is simple and east to operate, and a great significance is provided in reducing culture cost of stichopus japonicas, maintaining an ecological environment, reasonably using idle resource and prompting the health sustainable development of stichopus japonicu culture industry.

The invention discloses equipment for quickly preparing graphene and a preparation method of graphene. The equipment comprises a pipe furnace, a sample loading cabin, a vacuum valve and a plurality of sample loading boats, wherein the pipe furnace comprises a quartz pipe, one end of the quartz pipe is the heating end, the other end of the quartz pipe is connected with the sample loading cabin through the vacuum valve, and a heating device is arranged at the outer part of the heating end of the quartz pipe; a first air inlet and a first air outlet are formed in the quartz pipe of the pipe furnace; a second air inlet, a second air outlet and a sample loading opening are formed in the sample loading cabin; a position-changing device and a shifting device are arranged in the sample loading cabin; the sample loading boats are arranged above the position-changing device of the sample loading cabin; the relative positions of the sample loading boats and the shifting device are changed through the position-changing device; the shifting device drives the sample loading boat corresponding to the shifting device in position to move between the shifting device and the heating end of the quartz pipe. According to the invention, the growth efficiency of the pipe furnace is greatly improved, and the energy loss and waste are reduced.

The invention discloses a high-yield disease-resistant loach breeding feed and a making method thereof. The high-yield disease-resistant loach breeding feed comprises the following raw materials in parts by weight:10-15 parts of peanut meal, 10-15 parts of soybean meal, 8-10 parts of carrot root powder, 8-10 parts of powder of radix rosae multiflorae, 5-7 parts of spirulina powder, 10-12 parts of powder of radix et rhizoma rhei, radix scutellariae and cortex phellodendri, 15-20 parts of corn flour, 13-15 parts of sorghum flour, 13-15 parts of unhulled rice powder, 10-12 parts of peanut powder, 7-9 parts of soybean protein powder, 7-8 parts of rapeseed meal powder, 20-25 parts of fish meal, 18-20 parts of shrimp powder, 15-17 parts of silkworm chrysalis meal, 5-8 parts of pig's blood powder, 8-10 parts of fly larva powder, 5-8 parts of a nutritive mixture, 5-7 parts of composite multi-minerals, 8-10 parts of a Chinese herbal medicine additive, and 3-5 parts of table salt. In a formula of the loach breeding feed, materials are pollution-free substances, and are green and environmental-friendly, so that the loach breeding feed is an ecological environmental-friendly green feed. According to loaches fed with the feed, the disease resistance is obviously improved, the survival rate is greatly increased, the loaches are high in reproduction speed, the yield is also increased, the discharge of hazardous substances is reduced, and stability of water quality is maintained, favorable water body environment of the loaches is guaranteed, and the healthy growth of the loaches is promoted.

The invention discloses a planting method of camphor trees with a high survival rate and a high quality. The method comprises the following steps: S1, digging holes to plant camphor tree seedlings, applying a base fertilizer into each of the planting holes, then filling the planting holes with nutritional soil and planting soil of an original nursery stock planting land, and sufficiently watering rooting water; S2, applying an organic compound fertilizer in March to April for maiden trees which are planted 1-2 years ago, fertilizing the maiden trees in the first ten days and middle ten days of May separately with 45% potassium sulphate compound fertilizer every time, applying urea in the middle ten days of June and July, applying the 45% potassium sulphate compound fertilizer in the last ten days of August, digging deep holes in October to fertilize farmyard manure and calcium magnesium phosphate fertilizer; applying a germinating fertilizer before germination for adult trees in the middle ten days of February, and applying an organic release control fertilizer; and S3, leaving four main branches for every adult tree which is 2-3m high, carving sprouts on the tops of the branches in spring, primarily pinching in summer if being branched at 4cm, and pinching for the second time if being branched at 10cm, and starting to stretch the branches in June. According to the planting method of camphor trees, disclosed by the invention, the quality and the survival rate of the camphor trees can be effectively improved.

The invention discloses an ecological planting method of red Chinese pears. The planting method includes the following steps of field selection, soil preparation, planting, management of water and fertilizer, management of flowers and fruits, prevention and treatment of diseases and pests and shaping and pruning. According to the planting method, by using a plant extract as pesticide and adoptingdecomposed organic fertilizer as fertility supplement, investment of pesticide and fertilizer is effectively avoided, ecological planting of the red Chinese pears is achieved, no pressure is caused tosoil, the problems such as soil caking and pesticide residues are avoided, and the obtained pears are high in safety and yield, large in size, great in coloring, endurable to preservation and transportation and remarkable in economic benefit. By pruning in spring, growth of branches is facilitated, and illumination is improved. By pruning in winter, tree crowns expand appropriately, and early fruiting is facilitated. Through comprehensive management of the red Chinese pears, the quality of the pears is effectively improved, and the excellent quality and high yield of fruits are achieved.

The present invention relates to a novel method for microalgae circulation breeding and biological oil co-production, wherein additional nutrition substances are not required to be added, and the method can be provided for low cost microalgae culture and biological oil co-production. The method mainly comprises a novel microalgae circulation breeding manner and application of the circulation breeding process to co-produce the biological oil, wherein the microalgae collected from each generation breeding is subjected to hydrolysis to obtain a water phase and an oil phase, the water phase is adopted as a microalgae circulation breeding nutrition liquid to be added to a microalgae breeding system so as to provide a carbon source, a nitrogen source, a phosphorus source and inorganic salts, and achieve a purpose of circulation breeding, and fatty acids contained in the oil phase are the products. The method for microalgae breeding has characteristics of high efficiency, rapid microalgae growth, no requirement of additional nitrogen source, phosphorus source and inorganic salts, biological oil co-production, high economic values and high industrial application prospects.

The invention belongs to the technical field of microelectronics, and discloses a memristor with a two-dimensional material heterojunction and a preparation method of the memristor. The memristor comprises a substrate, a bottom electrode layer, a two-dimensional material heterojunction layer and a top electrode layer from bottom to top, wherein the two-dimensional material heterojunction layer serves as an intermediate dielectric layer and is of a two-layer laminated structure composed of two different metal sulfur compounds, and each layer in the laminated structure corresponds to one metal sulfur compound. Compared with the prior art, the novel memristor is constructed completely based on a two-dimensional material by improving a key functional layer material adopted by the device, the overall structural design of the device and the like, the traditional MIM structure is overturned, and the memristor has the characteristics of low working voltage, fatigue resistance and cycling stability. In addition, the memristor shows high similarity with synapses in information transmission on the aspect of simulating information transmission of neuron, and has a great application prospect onthe development of brain-like structures in the future.

The invention discloses an N surface yellow-light LED material based on a c-surface sapphire substrate and a manufacturing method thereof. The method comprises the following growing steps:1) carrying out thermal treatment on the c-surface sapphire substrate; 2) growing a low-temperature nucleating layer, the thickness of which is 10-200 nm, on the substrate obtained after thermal treatment; 3) growing a high-temperature n-type GaN active layer, of which the thickness is 0.2-100 mum, the Si doping concentration is 5*10<17>cm<-3>-5*10<19>cm<-3>, and the C doping concentration is 1*10<17>cm<-3>-4*10<19>cm<-3>, on the nucleating layer; 4) growing an AlGaN barrier layer, the thickness of which is 5-200 nm, on the active layer; and 5) growing a high-temperature p-type GaN layer, of which the thickness is 0.01-10 mum, and the Mg doping concentration is 1*10<17>cm<-3>-5*10<19>cm<-3>. The N surface yellow-light LED material based on the c-surface sapphire substrate and the manufacturing method thereof are simple in process and low in cost, and can be used for preparing an N surface GaN yellow-light light-emitting diode.