614results about How to "Improve growth efficiency" patented technology

It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.

The present invention relates to a method of manipulating the physiological state of algae cultured in raceway ponds by altering one or more environmental parameter to simulate algal bloom forming conditions and to raceway ponds suitable for culturing algae according to the present invention. The alteration of the one or more environmental parameters in a specifically timed manner can be used to induce and maintain synchronous cell division.

The invention relates to improvements in the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of a substrate comprising CO. It more particularly relates to the provision of an inorganic organic sulfur source to a fermentation system such that one or more micro-organisms convert a substrate comprising CO to alcohols. In a particular embodiment, a microbial culture is provided with sodium polysulfide, wherein a substrate comprising CO is converted to products including ethanol and 2,3-butanediol.

The invention discloses an intelligent WIFI household plantation automatic control system based on a mobile phone APP. The intelligent WIFI household plantation automatic control system includes a master control MCU, a sensor, a camera, a light supplement lamp, a relay, a household router, a cloud server, and the mobile phone APP, the sensor, the camera, and the light supplement lamp are arranged at the planted crops and are connected with the master control MCU, the master control MCU generates control orders based on the received environment variables and transmits the control orders to the light supplement lamp and the relay to respectively control illumination, water volume, and nutrient solution delivery, the household router is connected with the master control MCU, the cloud server is connected with the household router, the master control MCU uploads the received environment variables and the video data to the cloud server via the household router, and the mobile phone APP downloads the data via the cloud server. On the basis of the plantation requirement of different vegetables, the intelligent WIFI household plantation automatic control system inducts the current growth environment, controls the environment input, and realizes scientific plantation.

The invention discloses a preparation technique of a photosynthetic bacteria reagent, which comprises rhodopseudomonas palustris strain cultivation steps that include activated strain cultivation with an inclined plane, strain cultivation with a shaking table, cultivation with an aerated fermenting jar and the like, and adopts the culture medium comprising a basic culture medium and a growth promoting agent. The basic culture medium comprises following components by mass: 0.9 to 1.1 percent of glucose, 0.04 to 0.06 percent of carbamide, 0.02 to 0.03 percent of dipotassium hydrogen phosphate, 0.02 to 0.03 percent of monopotassium phosphate, 0.02 to 0.03 percent of magnesium sulfate, 0.20 to 0.30 percent of sodium chloride, 0.03 to 0.05 percent of calcium chloride and 98.40 to 98.77 percent of water. The added growth promoting agent is 0.10 to 0.30 percent of fulvic acid by mass referring to the basic culture medium. The photosynthetic bacteria reagent that is obtained by the preparation technique can reach the lysate concentration of 4000 to 6000 million per milliliter, and can be used in multiple fields of aquiculture, wastewater processing, crop production and the like.

The invention discloses a preparation method for a two-dimensional laminar heterojunction based on graphene. The preparation method includes the following steps that 1, hydrogen and carbon source gas are introduced into a reaction cavity with a metal substrate, and the reaction cavity is heated to make carbon dissolved in the metal substrate; 2, the carbon source gas is stopped from being introduced into the reaction cavity, and the reaction source is heated to grow on the metal substrate; 3, the temperature of the reaction cavity is reduced, carbon dissolved in the metal substrate is separated out and forms graphene, and then the two-dimensional laminar heterojunction based on graphene is obtained. According to the preparation method, a two-dimensional material like boron nitride or molybdenum disulfide is directly deposited on the surface of the transition metal substrate, and the thickness of graphene separated out at the low temperature is controlled with the carbon solubility difference of metal at different temperatures. By means of the preparation method, the growth efficiency is improved, the production cost is lowered, and impurities introduced in the preparation process are reduced.

The invention discloses a traditional herbal medicine feed addictive for preventing and controlling swine high fever syndrome, belonging to the technical field of feed addictives. The addictive is prepared from Chinese angelica, white paeony root, scutellaria, argy wormwood leaf, rhizoma atractylodis, hawthorn, magnolia officinalis, dried orange peel and liquorice as raw materials according to a certain weight part. By using the functions of enhancing the immunity of pigs, improving the success rate of vaccination and the like, the traditional herbal medicine feed addictive achieves the aims of improving the growth speed of commercial pigs and the conversion rate of the feed, reducing the death rate and the mortality of the pigs and improving economic benefits. The traditional herbal medicine feed addictive can be popularized and applied in pig farmers or farms.

The invention provides a nitride high-voltage device on silicon substrate and a manufacturing method thereof. According to the nitride high-voltage device on the silicon substrate, a high-voltage tolerance layer is led into a drain electrode region, and the thickness of a partial epitaxial layer is thickened to bear higher voltage reduction, so that high punch through voltage resistant device is achieved. Via the method of partial generation, the high punch through voltage resistant device is achieved, the problems of warping and chap of nitride epitaxial layer, which are caused by a whole material with over thickness, are avoided, therefore, material generation quality is ensured, material generation efficiency is improved, and the cost is lowered.

The invention is broadly in the agricultural field, more precisely in the field of industrial plant growth facilities. In particular, the invention concerns an industrial plant growing facility (100) for growing a variety of plants using predetermined growth conditions. Also, the invention concerns methods for growing plants in industrial plant growth facilities (100).

The invention discloses a crystal pulling furnace with a replaceable furnace cavity. The crystal pulling furnace comprises the furnace cavity, a rotating pulling weighing unit, a heat-preservation heat field and a crucible. The heat-preservation heat field is arranged in the furnace cavity, the crucible is put into the heat-preservation heat field, the rotating pulling weighing unit is arranged on the furnace cavity, and a seed rod is arranged in the furnace cavity and connected with the a rotating pulling weighing unit; the furnace cavity comprises an upper flange disc, a lower flange disc and a cavity body, the cavity body is arranged between the upper flange disc and the lower flange disc, a heating device is arranged inside the cavity body or arranged on the periphery, and sealing devices are arranged between the cavity and the upper flange disc and the lower flange disc. A lifting device is arranged in the furnace cavity and fixed on the lower flange disc, and the heat-preservation heat field and the crucible are arranged on the lifting device. The crystal pulling furnace can be adjusted and replaced and can be suitable for growth of more size crystals, and is simple in structure, convenient to assemble and maintain and low in energy dissipation. In addition, the crucible can be located in the best temperature filed through lifting device, and the crystal growing efficiency and quality are improved.

The invention provides a method for growing gem crystals by way of vacuum induction heating and a device realizing the method. The method includes the following steps: an inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body is utilized to heat alumina material in a crucible until the alumina material is melted, the convection of the melt and the linear velocity of flow are observed, an appropriate seeding temperature is chosen by adjusting the relative positional relation between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body and the crucible,and after seeding, crystallization, equal-diameter growth and separation between crystals and the crucible, crystal growth is finished. An adjustable gap exists between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13), so that the relative positional relation between the inductivetungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13) can be adjusted. The method and the device canbe adopted to produce large-dimension sapphires, the process can be conveniently and automatically controlled, energy consumption is reduced, and the cost is saved.

The invention provides a feed for loach seedlings, the feed is composed of following components: corn flour, sorghum flour, paddy flour, fodder soybean grass flour, soybean protein flour, sunflower flour, fish flour, bone flour, composite vitamins, composite minerals and a core addictive, wherein the core addictive is composed of following components: Chinese yam rhizome, radix astragali, fleece-flower root, bitter organe, cordate houttuynia, fruit of negundo, garlic and licorice. The feed can provide basic nutrition materials for the loach seedlings, and can promote the loach seedlings to grow fast. The core addictive not only can improve the growing efficiency of the loaches seedlings, but also can provide self-immunities to the loaches seedlings. The feed has the advantages of high safety, wide raw material sources and low price.

The invention discloses a device and method for preparing single crystal diamonds by laser enhanced plasma CVD. The device comprises plasma CVD equipment and laser equipment, wherein more than 1 set of laser equipment is respectively positioned on the outside of a cylindrical cavity of the plasma CVD equipment, laser emitted by the laser equipment can irradiate onto a substrate table positioned inthe cavity of the plasma CVD equipment; the substrate table is positioned in the middle of the cavity of the plasma CVD equipment, a cooling water circulation system is arranged at the lower part ofthe substrate table and comprises a cooling water inlet and a cooling water outlet; and a raw material gas inlet and an extraction opening are formed in the bottom of the cavity of the plasma CVD equipment. The method combines microwave energy (or electric energy) with laser energy and improves the energy of plasma and the gas dissociation rate in a diamond synthesizing process by using low-cost high-energy laser, thereby improving the synthetic rate of the diamonds and effectively solving the problem of high-speed mass preparation of diamonds.

A preparation method of stichopus japonicus fermented feed capable of replacing alga is prepared by taking water caltrop, hydrilla varticillata, water hyacinth, aggregation of grass, alfalfa and common seepweed herb as the alga replacing raw material and additionally adding four, sea mud, multi-vitamin, fish meal, mussel powder, bean pulp, earthworm powder and zeolite powder with the steps of: drying all materials till the water content is less than 12%, and crushing to be 60 meshes, so as to obtain a fermentation substrate; mixing water, brown sugar, table salt and flour, adding rhizopus, trichoderma, saccharomyces cerevisiae, bacillus subtilis and lactic acid bacteria, mixing uniformly, standing and fermenting for 2h, so as to obtain a feed fermenting bacteria solution; and inoculating the fermentation substrate according to the ratio of 0.4% to 0.5% at the environment temperature of 25 DEG C to 30 DEG C, carrying out solid fermentation, and then drying and crushing, thereby obtaining the stichopus japonicus fermented feed. The preparation method has the advantages that the raw material source is stable, the cost is low, the process is simple and east to operate, and a great significance is provided in reducing culture cost of stichopus japonicas, maintaining an ecological environment, reasonably using idle resource and prompting the health sustainable development of stichopus japonicu culture industry.

The invention discloses equipment for quickly preparing graphene and a preparation method of graphene. The equipment comprises a pipe furnace, a sample loading cabin, a vacuum valve and a plurality of sample loading boats, wherein the pipe furnace comprises a quartz pipe, one end of the quartz pipe is the heating end, the other end of the quartz pipe is connected with the sample loading cabin through the vacuum valve, and a heating device is arranged at the outer part of the heating end of the quartz pipe; a first air inlet and a first air outlet are formed in the quartz pipe of the pipe furnace; a second air inlet, a second air outlet and a sample loading opening are formed in the sample loading cabin; a position-changing device and a shifting device are arranged in the sample loading cabin; the sample loading boats are arranged above the position-changing device of the sample loading cabin; the relative positions of the sample loading boats and the shifting device are changed through the position-changing device; the shifting device drives the sample loading boat corresponding to the shifting device in position to move between the shifting device and the heating end of the quartz pipe. According to the invention, the growth efficiency of the pipe furnace is greatly improved, and the energy loss and waste are reduced.

The invention discloses an N surface yellow-light LED material based on a c-surface sapphire substrate and a manufacturing method thereof. The method comprises the following growing steps:1) carrying out thermal treatment on the c-surface sapphire substrate; 2) growing a low-temperature nucleating layer, the thickness of which is 10-200 nm, on the substrate obtained after thermal treatment; 3) growing a high-temperature n-type GaN active layer, of which the thickness is 0.2-100 mum, the Si doping concentration is 5*10<17>cm<-3>-5*10<19>cm<-3>, and the C doping concentration is 1*10<17>cm<-3>-4*10<19>cm<-3>, on the nucleating layer; 4) growing an AlGaN barrier layer, the thickness of which is 5-200 nm, on the active layer; and 5) growing a high-temperature p-type GaN layer, of which the thickness is 0.01-10 mum, and the Mg doping concentration is 1*10<17>cm<-3>-5*10<19>cm<-3>. The N surface yellow-light LED material based on the c-surface sapphire substrate and the manufacturing method thereof are simple in process and low in cost, and can be used for preparing an N surface GaN yellow-light light-emitting diode.