155results about How to "Reduce the cost of growth" patented technology

The invention relates to a biogas residue organic fertilizer and a preparation method thereof. The biogas residue organic fertilizer uses biogas residue as major raw materials (the consumption is higher than 80 percent) to be mixed with humic acid, nitrogenous fertilizers, phosphate fertilizers, potash fertilizers and trace elements. By aiming at two problems that the biogas residue can not be dewatered and solidified easily and the mechanical dewatering has high energy consumption, the invention utilizes a shallow tank natural solidifying and air drying process, and the biogas residue carries out aerobic secondary fermentation, air drying and solidification in a shallow tank to meet the pelletization moisture and physical property requirements. The biogas residue organic fertilizer of the invention can meet the requirement of nutrient required by crop growth, and can also fertilize the soil and improve the yield.

The invention relates to a method for growing crystal by reducing atmosphere Kyropoulos method; the method is characterized in that on the basis of growing crystal by induction heating pulling method, a tungsten, or molybdenum, or tungsten molybdenum alloy crucible is used; graphite felt which is arranged outside the crucible is used as a heat insulator; the reducing atmosphere is formed at high temperature; a hard graphite felt heat cover or a zirconia brick heat cover combined with a tungsten molybdenum after heater are placed above the crucible to preserve heat for fused mass in the crucible and the crystal grows; an observation window is arranged at the upper cover of the heat cover and the upper side of a furnace wall to ensure uniformity and symmetry of temperature field and temperature gradient distribution; the observation window arranged at the upper cover of the heat cover and the upper side of the furnace wall are used to observe the fused mass and the conventional pulling method is used to carry out parallel shouldering on inoculating crystal; then power is reduced at a certain speed, meanwhile, the crystal can be slightly pulled or not pulled, that is the Kyropoulos method; after crystallization is over, power is continued to be reduced to lower the temperature of the crystal. With the method of the invention adopted, large-size and high-quality crystal can be grown at low cost.

The invention discloses a preparing and purifying method of dealing modularization air-float artificial mattress of wastewater, wherein the main frame of bed display member frame structure as cube box; the bottom, angle and side wall connected with pipes; the top open up to the air; the grid plate is set on the bottom of the bed; the planting box is set on the grid plate; planting vegetation through the planting hole; setting several floats on the side wall; counteracting the weigh of bed body with floatage; keeping balance of bed body in the water; installing ports for passing water on the bottom of float bowl with at least 2 float bowl on the holder; inserting gas-filled lamp into float bowl through ports for passing water; equipping inflating gate valve on the other side of gas-filled lamp. The invention possesses rational structure and simply production, which can improve the survival rate of water plant.

The invention discloses a graphite crucible for increasing the growth length of silicon-carbide crystal. The graphite crucible comprises a graphite cover and a graphite bottom groove, wherein a graphite ring is also arranged between the graphite cover and the graphite bottom groove; the graphite cover is positioned at the upper-part sealing opening of the graphite ring; silicon-carbide seed crystal and silicon-carbide powder source are arranged under the graphite cover in sequence; a graphite connecting ring is added between the graphite ring and the graphite bottom groove; the graphite connecting ring is connected with the graphite ring and the graphite bottom groove by clamping grooves in an embedding manner; the graphite cover, the graphite ring, the graphite bottom groove and the graphite connecting ring are respectively made of high-purity graphite with same materials; the high-purity graphite means graphite with the carbon content being larger than 99.999%; the loading height ofthe silicon-carbide powder source is lower than the position of the graphite connecting ring, so that the crystallization of the silicon-carbide powder is prevented from causing bonding of the graphite connecting ring and the graphite bottom groove and causing difficult disassembly, and the problems of short growing length and overhigh growth cost of the silicon carbide in the prior art are solved.

Systems and methods are provided for preparing multi-component ferroelectric crystals (e.g., PMN-PT, amongst others) having piezoelectric properties. The crystals are fabricated using a system that employs multiple heaters and sensors that are located along the length of a crystal growth chamber. The heaters are controlled in concert, via a feedback system, to produce a temperature profile having a gradient that effectively moves along the length of the chamber, to suitably effectuate crystallization throughout the chamber, without need for the chamber to translate relative to the heater(s). During the crystallization process, the contents of the chamber may be mixed and/or homogenized via suitable agitation thereof, resulting in a multi-component ferroelectric crystal of desirable quality.

This invention relates to the heater and electrode structure of diamond film growth device. This invention mainly includes a fixing electrode, a mobile electrode and corresponding heater, the character as follows: the fixing electrode is arranged with a group of electrode poles in equal space; and the mobile electrode is also arranged with a group of electrode poles, and the space is equal to the electrode pole space of the fixing electrode, the electrode pole is half space away from the electrode pole on the fixing electrode; the heater is a flat-shape heater, which is wrapped around the electrode pole of the fixing electrode and mobile electrode to form heater array. Comparing to the circular silk, the flat-shape structure increases the contact area and time of the reaction gas and heater, and improves the reaction gas decomposing rate, and save electric energy to decrease the growth cost of the diamond film.

The invention belongs to a crucible device for a process of equipment for growing polycrystalline silicon by utilizing a directional solidification technology. The device is characterized in that a square high-purity graphite crucible is used for replacing the commonly used square high-purity quartz crucible; the square high-purity quartz crucible is formed by processing a whole graphite blank, and is assisted by relevant process designs (see figure); Si3N4, SiO/SiN or other materials are sprayed on the interior surface of the crucible and cured at high temperature. The square high-purity graphite crucible can be repetitively used in the polycrystalline silicon directional growth solidifying furnace, and then the producing cost of polycrystalline silicon ingots is greatly decreased, thereby reducing the silicon sheet price for the development of photovoltaic industry.

The invention provides a calculating method of growing parameters in a rare earth scintillation crystal growing process and a growing process of rare earth scintillation crystals. The growing process comprises the following steps: firstly, mixing an oxide raw material for preparing the rare earth scintillation crystals to obtain a mixed raw material; then in a vacuum atmosphere or a protective atmosphere, sintering the mixed raw material obtained in the step to obtain a polycrystal material block; and finally, in the vacuum atmosphere or the protective atmosphere, after melting the polycrystal material block, performing crystal growth by means of a pulling method according to the growing parameters calculated by the calculating method guided by seeds with specific growing directions to obtain the rare earth scintillation crystals. From the aspect of a crystal growing theory, the growing parameters such as the fastest growth rate, pulling growth rate and crystal rotating rate thermodynamically permitted through special simulating, deducing and calculating methods are obtained. The growing process is low in energy consumption, little in noble metal loss, short in time of growing process and high in crystal rate of finished products and has an obvious low cost advantage.

The invention discloses a zinc selenide single crystal growing method and a zinc selenide single crystal growing container. The method uses zinc and selenium as raw materials and iodine as a vapour phase reaction promoter, and further completes the growth of a zinc selenide single crystal in an ampoule. The method sequentially comprises the following steps: comprehensively cleaning the ampoule, feeding the materials into the ampoule and evacuating the ampoule, sealing the ampoule, cleaning a growing area of the sealed ampoule with hot water, growing crystals, cooling the crystals, and the like. The ampoule has the basic structure that: a raw material area is easy to mix Zn and Se elementary substances; and the growing area consists of a conical body formed by the tangency of two sections of arcs on the cross section of a middle axis of the ampoule. The technical scheme adopted by the invention can grow zinc selenide single crystals of a diameter of 12 to 20mm, and also can be applied to the preparation of other II-VI group compound semiconductor crystals. The grown zinc selenide single crystals have the characteristics of integral structure, good uniformity, small stress, low cost,and simple process.

The invention relates to a method for epitaxial growth of a gallium nitride (GaN) thin film on a Si substrate, the crack growth of GaN epitaxial thin films is limited, the surface topography is uniform, the process is relatively easy, and the method is easy to realize. According to the technical scheme, the method includes the steps that a metal-organic chemical vapor deposition (MOCVD) system isadopted for epitaxial growth and the epitaxial growth of the GaN thin film is conducted on the Si substrate. The method is characterized in that the epitaxial structure of the GaN thin film sequentially comprises the Si substrate, a pre-buried aluminum layer, a low temperature aluminum nitride (AlN) buffer layer, a high temperature aluminum nitride (AlN) buffer layer, a gallium nitride aluminum (AlxGal-xN) layer and the GaN thin film layer, wherein the low temperature AlN buffer layer is a low temperature AlN three-dimensional nucleating layer, the high temperature AlN buffer layer is a high temperature AlN three-dimensional nucleating layer, the AlxGal-xN layer is an AlxGal-xN stress relief layer, and the GaN thin film layer is a final growth layer.

The invention discloses a passive-drive dustbin capable of changing waste bags automatically. The passive-drive dustbin comprises a dustbin body. An opening used for collecting waste is formed in thetop of the dustbin body. A first cavity used for accommodating the waste bag is formed below the opening. The passive-drive dustbin is characterized in that the passive-dustbin further comprises a waste bag storage box, a waste bag conveying mechanism and a waste bag opening mechanism; the waste bag storage box is mounted on one side of the top of the dustbin body, a second cavity is formed in thewaste bag storage box, a plurality of stacked waste bags can be stored in the second cavity, and the first cavity communicates with the second cavity; the waste bag conveying mechanism is located inthe second cavity and is used for conveying the foremost waste bag to a first specified position; and the waste bag opening mechanism is located in the first cavity and is used for opening the waste bag located at the first specified position, so that an opening of the waste bag is located under the opening in the top of the dustbin body. The passive-drive dustbin capable of changing waste bags automatically is convenient to use, clean, sanitary, environmentally friendly, capable of saving energy, high in automation degree, and capable of greatly reliving the labor intensity.

A culture medium for the Daqiugai mushroom is prepared from the capsules of coffee bean and the saw dust or shavings of broad-leaf tree through mixing, adding water and stirring.

The invention discloses a crucible for growing a cadmium selenide crystal and a growing method of the cadmium selenide crystal. The crucible comprises an inner-layer crucible, an outer-layer crucible and a crucible cover, wherein the outer-layer crucible is sheathed outside the inner-layer crucible, the crucible cover is used for covering the outer-layer crucible, and a clearance is left between the outer-layer crucible and the inner-layer crucible; the inner-layer crucible comprises a tapered tip part and a first column body part for growing the cadmium selenide crystal, and the first column body part is arranged above the tapered tip part; the internal contour of the outer-layer crucible is matched with the external contour of the inner-layer crucible, and the external contour of the outer-layer crucible is columnar; the inner-layer crucible is made of graphite or pyrolytic boron nitride, and the outer-layer crucible is made of at least one of molybdenum, tungsten, iridium and platinum, and alloys thereof. The crucible can buffer pressure from the inner-layer crucible, so as to prevent the inner-layer crucible from having cracking and melt leakage phenomena; the crucible can guarantee that the inner-layer crucible and the outer-layer crucible cannot be cracked due to thermal expansion.

The invention discloses a device and method for growing a nitride monocrystal. The device comprises a reaction kettle, wherein the reaction kettle is filled with a growing solution; a seed crystal template is arranged at the bottom of the reaction kettle; a nitrogen inlet is formed at the top of the reaction kettle; and a pressure regulation valve is arranged in the nitrogen inlet. The device is characterized in that a vortex generation device for enabling the growing solution to form a vortex is arranged in the reaction kettle, and the vortex generation device is a gas flow system, a nitrogen pipeline system or a solution backflow system and enables the growing solution in the reaction kettle to form the vortex. By adopting the device and method disclosed by the invention, the shortcomings of unordered solution convection and insufficient N source supply of traditional reaction devices are effectively overcome, and the crystal quality and uniformity are effectively improved.

The invention provides a method for cultivating young portunid, comprising the following steps of early-stage preparation: soaking a cultivation pond with clean water for 1-2 days, then sterilizing the cultivation pond with 50ppm-100ppm bleaching powder, paving sterilized sea mud on the bottom of the cultivation pond, introducing sea water and adding bdellovibrio solution and nitrifying bacteria; spawning; after-treatment: throwing bacillus solution during the cultivation process. By the adoption of the method provided by the invention, the water can be purified, the water quality can be improved, and the residues caused by a conventional cultivation method can be prevented; meanwhile, as the water is not changed during the cultivation process, the growing cost is reduced; not only is the survival rate of the young portunid improved, but also the immunity of the young portunid can be improved; with the utilization of the method, the abuse of drugs such as antibiotics in production is avoided; the incidence of diseases is lowered; the production yield is improved.

The invention provides a preparation method of an N-type low-defect silicon carbide epitaxial wafer. The method comprises the steps of preparation of a substrate, online substrate etching, growth of a buffer layer and growth of an epitaxial layer, wherein growth of the epitaxial layer includes growth, etching, blowing and re-growth. The method can be used to effectively reduce the dislocation density of the base, reduce deposit in the cavity, reduce the defect density of the surface of the silicon carbide epitaxial wafer, improve the quality of a silicon carbide epitaxial material, and is wide in application range, low in processing cost and suitable for industrial production.

The invention relates to a GaN-base LED epitaxial structure and a growing method of the GaN-base LED epitaxial structure. The growing method of the GaN-base LED epitaxial structure includes the following steps: (1) sequentially growing a GaN nucleating layer, an involuntary doping u-GaN layer and an N-type doping GaN layer on a sapphire substrate, (2) growing an active area MQW layer on the N-type doping GaN layer, when the active area MQW layer grows, enabling the pressure of a reaction chamber during quantum well growth to be smaller than the pressure of the reaction chamber during quantum base growth, keeping a pure N2 atmosphere for set time respectively before the quantum well growth and after the quantum well growth, controlling the growth thickness of a quantum base in the active area MQW layer to be smaller than 6nm, and (3) further growing an electronic barrier layer, a P-type doping GaN layer and a contact layer on the active area MQW layer sequentially. The GaN-base LED epitaxial structure is low in production cost, and a GaN-base LED manufactured by the GaN-base LED epitaxial structure is high in luminous efficiency.

The invention provides a high-performance non-asbestos brake pad, and further provides a method for preparing the high-performance non-asbestos brake pad. The high-performance non-asbestos brake pad is at least prepared from the following components in parts by weight: 40-60 parts of fibers, 10-15 parts of resin and 35-40 parts of frictional powder. The non-asbestos brake pad is free of asbestos and is healthy and environmentally friendly, meanwhile, waste of non-asbestos clutch surface production is used as the frictional powder to turn the waste into treasure, the production cost, and wastedischarge is reduced.

The invention discloses a micro-pulling-down crystal growing furnace. The furnace comprises an upper heat-insulating layer and a bottom heat-insulating layer (13) which are arranged from top to bottom, wherein a tubular observation hole (4) is also formed in the bottom heat-insulating layer (13), and the included angle formed by the central axis of the observation hole (4) and the normal of the top surface of the bottom heat-insulating layer (13) is in a range of 45-60 degrees; each of an inner heat-insulating layer, a middle heat-insulating layer and the bottom heat-insulating layer (13) is formed by pressing and calcining zirconium oxide and aluminium oxide in the mass ratio of 1:9. According to the micro-pulling-down crystal growing furnace, the crystal growing condition of a crystal growing interface can be timely observed via the formed observation hole; besides, the effect caused by the observation hole on the temperature field of the crystal growing furnace is low, and the crystal growing yield can be further increased.

The invention belongs to the technical field of crystal growth, relates to a crucible structure for growing silicon carbide monocrystals by a physical vapor transport technology, and particularly relates to a crucible for growing silicon carbide monocrystals and having multiple growth cavities. According to the crucible provided by the invention, a material cavity structure of the crucible is in design of multiple growth areas and unified material cavity. The crucible provided by the invention is characterized by adopting the design of multiple growth areas and unified material cavity. In the crucible, multiple silicon carbide monocrystals can be grown synchronously in the same growth period. By adopting the crucible design provided by the invention to grow silicon carbide monocrystals, the growth efficiency can be effectively improved, the growth time is saved, and the crystal cost is reduced. Compared with the traditional method, the monocrystal growth efficiency is improved by 2-3 times on the premise of same equipment configuration.