Graphite crucible for increasing growth length of silicon-carbide crystal

Abstract

The invention discloses a graphite crucible for increasing the growth length of silicon-carbide crystal. The graphite crucible comprises a graphite cover and a graphite bottom groove, wherein a graphite ring is also arranged between the graphite cover and the graphite bottom groove; the graphite cover is positioned at the upper-part sealing opening of the graphite ring; silicon-carbide seed crystal and silicon-carbide powder source are arranged under the graphite cover in sequence; a graphite connecting ring is added between the graphite ring and the graphite bottom groove; the graphite connecting ring is connected with the graphite ring and the graphite bottom groove by clamping grooves in an embedding manner; the graphite cover, the graphite ring, the graphite bottom groove and the graphite connecting ring are respectively made of high-purity graphite with same materials; the high-purity graphite means graphite with the carbon content being larger than 99.999%; the loading height ofthe silicon-carbide powder source is lower than the position of the graphite connecting ring, so that the crystallization of the silicon-carbide powder is prevented from causing bonding of the graphite connecting ring and the graphite bottom groove and causing difficult disassembly, and the problems of short growing length and overhigh growth cost of the silicon carbide in the prior art are solved.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide crystals, in particular to a graphite crucible for increasing the growth length of silicon carbide crystals. Background technique [0002] Silicon carbide is the third-generation new semiconductor material after the first-generation silicon and the second-generation gallium arsenide. It has excellent properties such as wide band gap, high thermal conductivity, high electron saturation migration rate, and high breakdown electric field. It can not only It is used as the substrate material of GaN-based blue light-emitting diodes, and is especially suitable for the manufacture of high-temperature, high-frequency, high-power, radiation-resistant, and corrosion-resistant electronic devices, and can be widely used in solid-state lighting, aerospace, communications, marine Exploration, earthquake prediction, oil drilling, automotive electronics and other important fields. [0003] At present, the...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a graphite crucible that increases the growth length of silicon carbide crystals, which solves the problems of short growth length and high growth cost of silicon carbide in the prior art

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