Hot wire for diamond film growth device and electrode structure thereof

A diamond film and electrode structure technology, applied in ohmic resistance electrodes, metal material coating process, ohmic resistance heating parts, etc., can solve the problem of waste of radiant energy, improve uniformity, reduce thermal blockage and thermal flow effect of phenomenon

Inactive Publication Date: 2006-10-11
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
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  • Application Information

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Problems solved by technology

Since the high-temperature round wire radiates energy to the surroundings, the effective radiation for the growth of the diamon...

Method used

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  • Hot wire for diamond film growth device and electrode structure thereof
  • Hot wire for diamond film growth device and electrode structure thereof
  • Hot wire for diamond film growth device and electrode structure thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0020] The annealed soft Φ2mmTa wire is pressed into a section of 7×0.45mm 2 Compared with the φ2mm round wire, the flat wire has an outer surface area increased by 2.4 times. It is installed and fixed into a flat wire array. Compared with the Φ2mm round wire array, when other process parameters such as the temperature of the wire are 2400°C and the temperature of the substrate is 800 ℃, reaction pressure 35Torr, total gas flow rate 200SCCM, volume ratio CH4:H2=3:97 and other conditions are the same, the result observation shows that the nucleation density increases by three orders of magnitude up to 2×109 / cm2, the growth rate increases by 1.5 times, from 10um / hr→15um / hr, the power consumption per carat is reduced by 30%.

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Abstract

This invention relates to the heater and electrode structure of diamond film growth device. This invention mainly includes a fixing electrode, a mobile electrode and corresponding heater, the character as follows: the fixing electrode is arranged with a group of electrode poles in equal space; and the mobile electrode is also arranged with a group of electrode poles, and the space is equal to the electrode pole space of the fixing electrode, the electrode pole is half space away from the electrode pole on the fixing electrode; the heater is a flat-shape heater, which is wrapped around the electrode pole of the fixing electrode and mobile electrode to form heater array. Comparing to the circular silk, the flat-shape structure increases the contact area and time of the reaction gas and heater, and improves the reaction gas decomposing rate, and save electric energy to decrease the growth cost of the diamond film.

Description

technical field [0001] The invention relates to a device for growing a diamond film by a hot wire method, in particular to a hot wire and its electrode structure. Background technique [0002] Diamond film technology has been developed for many years, and now its products have begun to be applied in fields such as machining (such as welded thick film tools, coating tools, wire drawing dies, etc.), showing broad application prospects and huge potential markets. There are many methods for depositing diamond films. Usually there are microwave plasma chemical vapor deposition method, direct current plasma jet method and hot wire method. Among them, because the hot wire method has simple equipment, low cost and good film quality, it is more suitable for applications in the mechanical field. [0003] Recent domestic and foreign diamond film tool market surveys show that the market size and development speed of diamond film tools are much lower than the forecast of authoritative ...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/44C23C16/54H05B3/03
Inventor 左敦稳相炳坤黎向锋徐锋卢文壮
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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