Hot wire for diamond film growth device and electrode structure thereof

Abstract

This invention relates to the heater and electrode structure of diamond film growth device. This invention mainly includes a fixing electrode, a mobile electrode and corresponding heater, the character as follows: the fixing electrode is arranged with a group of electrode poles in equal space; and the mobile electrode is also arranged with a group of electrode poles, and the space is equal to the electrode pole space of the fixing electrode, the electrode pole is half space away from the electrode pole on the fixing electrode; the heater is a flat-shape heater, which is wrapped around the electrode pole of the fixing electrode and mobile electrode to form heater array. Comparing to the circular silk, the flat-shape structure increases the contact area and time of the reaction gas and heater, and improves the reaction gas decomposing rate, and save electric energy to decrease the growth cost of the diamond film.

Description

technical field

[0001] The invention relates to a device for growing a diamond film by a hot wire method, in particular to a hot wire and its electrode structure. Background technique

[0002] Diamond film technology has been developed for many years, and now its products have begun to be applied in fields such as machining (such as welded thick film tools, coating tools, wire drawing dies, etc.) showing broad application prospects and huge potential markets. Deposited diamond film There are many methods. Usually there are microwave plasma chemical vapor deposition method, DC plasma jet method and hot wire method. Among them, the hot wire method is more suitable for applications in the mechanical field because of its simple equipment, low cost, and good film quality.

[0003] Recent domestic and foreign diamond film tool market surveys show that the market size and development speed of diamond film tools are much lower than the forecast of authoritative international resourc...

Examples

Embodiment

[0020] The annealed soft Ф2mmTa wire is pressed into a flat hot wire with a cross-section of 7×0.45mm2. Compared with the φ2mm round wire, the outer surface area is increased by 2.4 times, and it is installed and fixed into a flat hot wire array. Compared with the Ф2mm round wire array, the comparison test, When other process parameters such as filament temperature 2400°C, substrate temperature 800°C, reaction pressure 35Torr, total gas flow rate 200SCCM, volume ratio CH4:H2=3:97 and other conditions are the same, the observation results show that the nucleation density increases by three orders of magnitude Up to 2×109 / cm2, the growth rate is increased by 1.5 times, from 10um / hr→15um / hr, and the power consumption per carat is reduced by 30%.

technical field

[0001] The invention relates to a device for growing a diamond film by a hot wire method, in particular to a hot wire and its electrode structure. Background technique

[0002] Diamond film technology has been developed for many years, and now its products have begun to be applied in fields such as machining (such as welded thick film tools, coating tools, wire drawing dies, etc.) showing broad application prospects and huge potential markets. Deposited diamond film There are many methods. Usually there are microwave plasma chemical vapor deposition method, DC plasma jet method and hot wire method. Among them, the hot wire method is more suitable for applications in the mechanical field because of its simple equipment, low cost, and good film quality.

[0003] Recent domestic and foreign diamond film tool market surveys show that the market size and development speed of diamond film tools are much lower than the forecast of authoritative international resourc...

Examples

Embodiment

[0020] The annealed soft Ф2mmTa wire is pressed into a flat hot wire with a cross-section of 7×0.45mm2. Compared with the φ2mm round wire, the outer surface area is increased by 2.4 times, and it is installed and fixed into a flat hot wire array. Compared with the Ф2mm round wire array, the comparison test, When other process parameters such as filament temperature 2400°C, substrate temperature 800°C, reaction pressure 35Torr, total gas flow rate 200SCCM, volume ratio CH4:H2=3:97 and other conditions are the same, the observation results show that the nucleation density increases by three orders of magnitude Up to 2×109 / cm2, the growth rate is increased by 1.5 times, from 10um / hr→15um / hr, and the power consumption per carat is reduced by 30%.

Images