GaN-base LED epitaxial structure and growing method thereof

Abstract

The invention relates to a GaN-base LED epitaxial structure and a growing method of the GaN-base LED epitaxial structure. The growing method of the GaN-base LED epitaxial structure includes the following steps: (1) sequentially growing a GaN nucleating layer, an involuntary doping u-GaN layer and an N-type doping GaN layer on a sapphire substrate, (2) growing an active area MQW layer on the N-type doping GaN layer, when the active area MQW layer grows, enabling the pressure of a reaction chamber during quantum well growth to be smaller than the pressure of the reaction chamber during quantum base growth, keeping a pure N2 atmosphere for set time respectively before the quantum well growth and after the quantum well growth, controlling the growth thickness of a quantum base in the active area MQW layer to be smaller than 6nm, and (3) further growing an electronic barrier layer, a P-type doping GaN layer and a contact layer on the active area MQW layer sequentially. The GaN-base LED epitaxial structure is low in production cost, and a GaN-base LED manufactured by the GaN-base LED epitaxial structure is high in luminous efficiency.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to an epitaxial structure of a GaN-based LED and a growth method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) has the advantages of small size, sturdy and durable, strong controllability of luminous band, high luminous efficiency, low heat loss, low light decay, energy saving, environmental protection, etc., and has been widely used. In recent years, LEDs have been widely used in display screens, instrument backlights, traffic signal displays, automobile taillights, interior instrument display and decoration, and lighting. However, the popularization of LED lighting needs further improvement of its brightness and further reduction of production cost. [0003] At present, traditional GaN-based LEDs are made of sapphire (chemical formula Al 2 o 3 , aluminum oxide) substrate using MOCVD (Metal-Organic Chemical Vapor Deposition, metal organic ...

AI Technical Summary

Problems solved by technology

This growth method takes a long time to raise and lower the temperature between the well and the barrier and grow the barrier, and the cost is high. The contradiction between the temperature difference between the well and the barrier and the crystal quality of the active region is prominent.

[0004] Usually in the MQW of GaN-based LEDs, the thickness of QW (Quantum Wells, quantum well) is about 3nm (nano), the thickness of the quantum barrier is 10nm to 15nm, and the quantum barrier is usually a mixed atmosphere of H2 (hydrogen gas) and N2 (nitrogen gas), The growth temperature is 80 degrees Celsius (°C) to 150°C higher than that of the quantum well, and the heating and cooling time is too long and the thickness of the quantum barrier is too large, which will inevitably increase the production cost of the material

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