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Germanium quantum dot growing method, germanium quantum dot composite material and application of germanium quantum dot composite material

A composite material and growth method technology, applied in the field of semiconductor quantum dot preparation, can solve the problems of uncontrollable, uncontrollable, complicated substrate interface cleaning process, etc., and achieve the effect of excellent performance

Active Publication Date: 2015-02-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] Aiming at the shortcomings of the prior art that the preparation process of germanium quantum dots is complex, the cleaning process of the substrate interface is complicated, the self-assembly is poor, and it is not easy to control, the purpose of the present invention is to provide a growth method for germanium quantum dots, which has excellent optoelectronic properties. The graphene layer with characteristic and atomic level smooth interface is used as the substrate, without complex cleaning of the substrate, which solves the problem that the preparation process of germanium quantum dots in the prior art is complicated and difficult to control

Method used

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  • Germanium quantum dot growing method, germanium quantum dot composite material and application of germanium quantum dot composite material
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  • Germanium quantum dot growing method, germanium quantum dot composite material and application of germanium quantum dot composite material

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Embodiment 1

[0083] A kind of growth method of germanium quantum dot comprises the steps:

[0084] (1) Provide a silicon substrate, ultrasonically clean it with tap water for 3 minutes, deionized water for 5 minutes, and acetone for 5 minutes, and repeat the ultrasonic cleaning step twice to remove pollutants on the substrate;

[0085] (2) Place the silicon substrate cleaned in step (1) in the reaction chamber of the tube furnace, seal the reaction chamber, and feed argon to ensure that the tube furnace is in an argon atmosphere, and feed methane gas as the carbon source gas , heating the reaction chamber to 1000° C., and keeping it warm for 20 minutes. After the reaction is completed, cool the reaction chamber under an argon atmosphere to obtain a graphene layer grown on the substrate, and the thickness of the graphene layer is 1 to 15 nm;

[0086] (3) Using the high-purity germanium target as the target material, under the sputtering radio frequency power of 300W and the Ar gas flow rate...

Embodiment 2

[0090] A kind of growth method of germanium quantum dot comprises the steps:

[0091] (1) Provide a silicon substrate, ultrasonically clean it with tap water for 4 minutes, deionized water for 4 minutes, and acetone for 10 minutes, and repeat the ultrasonic cleaning step 4 times to remove pollutants on the substrate;

[0092] (2) Place the silicon substrate cleaned in step (1) in the reaction chamber of the tube furnace, seal the reaction chamber, and feed argon to ensure that the tube furnace is in an argon atmosphere, and feed methane gas as the carbon source gas , heating the reaction chamber to 1200° C., and keeping it warm for 15 minutes. After the reaction is completed, cool the reaction chamber under an argon atmosphere to obtain a graphene layer grown on the substrate, and the thickness of the graphene layer is 1 to 8 nm;

[0093] (3) Using the radio frequency magnetron sputtering method, using the high-purity germanium target as the target material, under the radio fr...

Embodiment 3

[0097] A kind of growth method of germanium quantum dot comprises the steps:

[0098] (1) Provide a silicon substrate, ultrasonically clean it with tap water for 5 minutes, deionized water for 5 minutes, and acetone for 10 minutes, and repeat the ultrasonic cleaning step once to remove pollutants on the substrate;

[0099] (2) Place the silicon substrate cleaned in step (1) in the reaction chamber of the tube furnace, seal the reaction chamber, and inject helium gas to ensure that the tube furnace is in the helium atmosphere, and turn on the precision flow pump to make 99.9% Pure ethanol is injected into the reaction chamber through the capillary at a rate of 18 μL / min, the reaction chamber is heated to 900°C, and kept for 30 minutes. After the reaction is completed, the reaction chamber is cooled under a helium atmosphere to obtain a graphene layer grown on the substrate. The thickness of the graphene layer is 20~30nm;

[0100] (3) Using the high-purity germanium target as t...

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Abstract

The present invention relates to a method for growth of germanium quantum dots. In the method, germanium quantum dots are grown on graphene interfaces with different quantities of layers. In the present invention, ultra-high uniformity graphene interfaces are introduced on a conventional substrate surface, Ge quantum dots are grown on the interfaces, and complicated cleaning processes for obtaining high-quality interfaces are avoided, and process flows are simplified; in addition, the low-matrix element content and the low defect rate of the germanium quantum dots are ensured, a self-organization growth process of the germanium quantum dots is ensured, and germanium quantum dots with good shape and uniformity are formed.

Description

technical field [0001] The invention relates to the field of preparation of semiconductor quantum dots, in particular to a growth method of germanium quantum dots, germanium quantum dot composite materials and applications thereof. Background technique [0002] Quantum Dot (Quantum Dot) is a quasi-zero-dimensional nanomaterial composed of a small number of atoms. Roughly speaking, the size of the three dimensions of quantum dots are all below 100nm, and the appearance is just like a very small point. The movement of electrons in it is restricted in all directions, so the quantum confinement effect (Quantum Confinement Effect) is particularly significant. . [0003] The movement of electrons in the quantum dots in the three-dimensional direction is affected by the quantum confinement effect, so that the distribution of the electronic density of states inside the quantum dots appears as a separation function, and the forbidden band width of the quantum dots (E g , the energy...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/15
CPCH01L21/0259H01L21/02444H01L21/02499H01L21/02532H01L31/028H01L31/035218Y02E10/547
Inventor 李振军白冰杨晓霞王小伟许应瑛戴庆裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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