43results about How to "Unified appearance" patented technology

The invention discloses a method for preparing magnesium hydrate through ammonia spray method. The method comprises the following steps: by using caustic calcined magnesite and ammonium salt as raw materials, carrying out ammonia stilling reaction to obtain an ammonium and magnesium salt solution, wherein the ammonium and magnesium salt are contacted in a spray type reactor and magnesium hydrate precipitation reaction is performed, aging product mother liquor for a proper time, filtering, returning filtrate containing ammonium salt to an ammonia stilling system, washing and drying filter cake to obtain magnesium hydrate product with uniform particle shape and good dispersion state. The process disclosed by the invention is used for preparing magnesium hydrate through one-step reaction, is simple in operation step, mild in reaction condition, uniform in product particle shape, and the particle shape can be regulated by changing the reaction condition. The ammonium slat is circulated with the ammonia in the reaction process, the production cost is low, the pollution is less, and the scale production is realized, the product can be used as production raw material of high-pure magnesium oxide and inflaming retarding additive of polymer material.

The invention discloses a preparing method for controllably synthesizing monodisperse active metal nanoparticles through lasers. The method comprises the steps that pure-metal target materials serve as raw materials, the processed target materials are placed into a laser radiating device, the laser radiating device is inflated with argon, cyclohexane and oleic acid are added into the laser radiating device, and then the volume solubility of the oleic acid is larger than 0.05 percent but smaller than 0.12 percent; the target materials are ablated through a nanosecond focus pulse laser to prepare a pure-metal nanometer colloid solution; the colloid solution is transferred to the other laser radiating device, and the volume concentration of the oleic acid in the cyclohexane is adjusted to range from 0.14 percent to 0.17 percent; a nanosecond parallel pulse laser is utilized for irradiating the metal nanometer colloid solution to prepare the monodisperse active metal nanoparticles with the diameter ranging from 5 nm to 20 nm. According to the preparing method, the active metal nanoparticles uniformed in appearance under the normal-temperature and normal-pressure liquid phase condition are controllably synthesized, and the size distribution of the active nanometer particles is smaller than 10 percent. The method is simple in technology, convenient to operate, free of by-products and impurities and suitable for synthesizing most active metal nanometer particles, and is an environmental-friendly synthesizing technology.

The present invention relates to a method for growth of germanium quantum dots. In the method, germanium quantum dots are grown on graphene interfaces with different quantities of layers. In the present invention, ultra-high uniformity graphene interfaces are introduced on a conventional substrate surface, Ge quantum dots are grown on the interfaces, and complicated cleaning processes for obtaining high-quality interfaces are avoided, and process flows are simplified; in addition, the low-matrix element content and the low defect rate of the germanium quantum dots are ensured, a self-organization growth process of the germanium quantum dots is ensured, and germanium quantum dots with good shape and uniformity are formed.

The invention discloses a zinc oxide micron wall material and a preparation method thereof. A method for obtaining a zinc oxide micron wall on a silica-based gallium nitride substrate with cracks by the low-temperature water bathing method includes utilizing zinc acetate, hexamine and deionized water as raw materials and silica-based gallium nitride with cracks as a substrate, inducing the zinc oxide to preferentially form a core via the cracks and forming the zinc oxide micron wall in self-assembly manner. The method is simple in reaction conditions, and the zinc oxide micron wall grown is large in specific surface area, high in length diameter ratio and purity and controllable in height. The low-temperature preparation of the large-area zinc oxide micron wall controllable in growth is realized. The large-area zinc oxide micron wall can be hopefully and importantly applied in the fields of microelectronics, microelectronic photoelectric devices and sensors. The preparation method has no special requirements for heating environment, is simple and easily controllable to operate, high in repeatability and suitable for industrialized production, and raw materials are easy to obtain and low in cost.