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Method for growing large-area zinc oxide micron wall

A zinc oxide micron, growth solution technology, applied in chemical instruments and methods, zinc oxide/zinc hydroxide, single crystal growth, etc., can solve the problems of high production cost, complex preparation process, low product purity, etc., and achieves easy operation. , the preparation process is simple, the effect of high purity

Inactive Publication Date: 2012-10-10
DALIAN NATIONALITIES UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing micron-sized zinc oxide or the preparation process is complicated, and the required raw material is expensive high-purity metal zinc, which leads to high production costs or low purity of the obtained product.

Method used

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  • Method for growing large-area zinc oxide micron wall
  • Method for growing large-area zinc oxide micron wall
  • Method for growing large-area zinc oxide micron wall

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. The preparation method of ultra-long zinc oxide micron wall:

[0030] 1. First, clean the GaN-on-Si substrate with cracks and dry it for later use.

[0031] 2. Accurately weigh 50mM hexamethylenetetramine (0.7009g) and zinc acetate (1.0975g) with an electronic balance, and put them into a beaker. Then add 100ml of deionized water, stir quickly and evenly.

[0032] 3. Put the gallium nitride substrate in step 1 into the beaker in step 2, wrap the mouth of the beaker with tinfoil, put it in a water bath, and start heating. Set the final heating temperature to 90°C and heat at a constant temperature for 30min.

[0033] 4. After the reaction, the substrate was repeatedly rinsed with deionized water to remove excess ammonium salts and ions, and dried for characterization.

[0034] For the materials grown in the above embodiments, the scanning electron microscope (SEM) and energy spectrum element surface distribution are used for analysis, and the present invention will...

Embodiment 2

[0039] The steps of this example are the same as those of Example 1, except that the reaction time in Example 1 is changed.

[0040] In this example, hexamethylenetetramine and zinc acetate were 50 mM, namely 0.7009 g and 1.0975 g, respectively, and were dissolved in 100 ml of deionized water. In the present embodiment, the reaction time of constant temperature heating in a water bath is 90min.

[0041] See attached image 3 , Prepare the surface topography figure of sample by the method described in example 2. image 3 (a) is a scanning electron microscope low-magnification image of the ultra-long zinc oxide micro-wall prepared in Example 2 of the present invention, and the sample is at a certain inclination angle. It can be seen from the figure that the product morphology is uniform and orderly, all along the direction of the crack grows to hundreds of microns in length. image 3 (b) is a high-magnification image of the scanning electron microscope of the zinc oxide micro...

Embodiment 3

[0043] The steps of this embodiment are the same as those of Examples 1 and 2, except that the amounts and reaction times of the two reactants in Examples 1 and 2 have been changed. The hexamethylenetetramine and zinc acetate in this example were 30 mM, namely 0.4205 g and 0.6585 g, respectively, and were dissolved in 100 ml of deionized water. The medium water bath of the present embodiment was heated at a constant temperature for 90min.

[0044] See attached Figure 4 , Prepare the surface topography figure of the sample according to the method described in example 3. Figure 4 (a) is a low-magnification image of the scanning electron microscope of the zinc oxide micro-wall prepared in Example 1 of the present invention. It can be seen from the figure that the product has a uniform appearance, a longer length, and a higher aspect ratio. Figure 4 (b) is a scanning electron microscope high-magnification image of the ultra-long zinc oxide micro-wall prepared in Example 1 of ...

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Abstract

The invention discloses a zinc oxide micron wall material and a preparation method thereof. A method for obtaining a zinc oxide micron wall on a silica-based gallium nitride substrate with cracks by the low-temperature water bathing method includes utilizing zinc acetate, hexamine and deionized water as raw materials and silica-based gallium nitride with cracks as a substrate, inducing the zinc oxide to preferentially form a core via the cracks and forming the zinc oxide micron wall in self-assembly manner. The method is simple in reaction conditions, and the zinc oxide micron wall grown is large in specific surface area, high in length diameter ratio and purity and controllable in height. The low-temperature preparation of the large-area zinc oxide micron wall controllable in growth is realized. The large-area zinc oxide micron wall can be hopefully and importantly applied in the fields of microelectronics, microelectronic photoelectric devices and sensors. The preparation method has no special requirements for heating environment, is simple and easily controllable to operate, high in repeatability and suitable for industrialized production, and raw materials are easy to obtain and low in cost.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide micro-wall by using a cracked silicon-based gallium nitride film as a substrate, and belongs to the technical field of semiconductor materials and its preparation. Background technique [0002] Zinc oxide (zinc oxide) is a wide bandgap (Eg=3.4eV) direct bandgap semiconductor material with a high melting point and exciton binding energy (60mev), which greatly improves the excitation mechanism of zinc oxide materials and reduces excitation threshold at room temperature. In addition, zinc oxide has a melting point of 1975°C and has high thermal and chemical stability. At the same time, it is also a multifunctional oxide material, which has excellent properties in piezoelectricity, electricity, and optics, and is widely used in the preparation of functional material devices such as gas sensors, ultrasonic oscillators, and transparent electrodes for solar cells. As a light-emitting material, zin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B19/12C30B29/16C01G9/02
Inventor 于乃森杜丽芳吴云峰胡丹扬毛张文王勇
Owner DALIAN NATIONALITIES UNIVERSITY
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