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35results about How to "Change the temperature distribution" patented technology

Burner device and industrial furnace

PendingCN121969870AChange operating conditionsChange the heating positionFuel supply regulationIndirect carbon-dioxide mitigationCombustorWaste management
A burner device (X) in which air (Air) ejected from an air ejection port (21) and fuel (G) ejected from a fuel ejection nozzle (30) are mixed and burned, the fuel ejection nozzle (30) being provided with a short-flame fuel ejection nozzle (31) and a long-flame fuel ejection nozzle (32), the short-flame fuel ejection nozzle (31) and the long-flame fuel ejection nozzle (32) being disposed in the short-flame fuel ejection nozzle (31), and the long-flame fuel ejection nozzle (32) being disposed between the short-flame fuel ejection nozzle (31) and the long-flame fuel ejection nozzle (32). The short-flame fuel discharge nozzle (31) mixes and burns the fuel at a position close to the air discharged from the air discharge port, and the long-flame fuel discharge nozzle (32) mixes and burns the fuel at a position away from the air discharged from the air discharge port.
Owner:CHUGAI RO CO LTD

Gallium oxide crystal growing device

The present invention relates to the technical field of crystal growth, and discloses a gallium oxide crystal growth apparatus, which comprises: a thermal insulation cylinder, which comprises a cylinder cavity; the crucible is contained at the bottom of the barrel cavity, and the crucible is used for containing gallium oxide raw material powder; the lifting assembly is configured to extend into the barrel cavity and is used for lifting the gallium oxide crystal; the reflecting screen assembly is arranged in the barrel cavity and is arranged on the periphery of the barrel cavity; and the lifting assembly is configured to enable the reflecting screen assembly to ascend and descend in the direction from the bottom of the barrel cavity to the top of the barrel cavity. The growth device has the beneficial effects that the temperature distribution in the growth device can be adjusted according to the growth process of gallium oxide, and the influence on crystal growth due to large temperature difference at the solid-liquid level of the crystal in the crystal growth process is avoided.
Owner:PIONEER ORIGINAL (SHANGHAI) NEW TECHNOLOGY RESEARCH CO LTD