Resistance heating body for adjusting temperature distribution inside high-temperature and high-pressure synthesis cavity body

Abstract

The invention discloses a resistance heating body for adjusting a temperature distribution inside a high-temperature and high-pressure synthesis cavity body. The resistance heating body comprises a heating-body barrel body. The resistance heating body is characterized in that the barrel body consists of at least three heating bodies which are different in resistivity up and down; the resistivity of all the heating bodies from a center to two ends is gradually increased. According to the resistance heating body, as the heating-body barrel body is designed to be of a structure which consists of at least three heating bodies which are different in resistivity up and down, in comparison with the prior art, through dividing the barrel-shaped resistance heating body into multiple parts, which are different in resistance, at different positions along the axial direction, the temperature distribution inside a high-temperature and high-pressure synthesis reaction chamber is changed; the pressure gradient inside the reaction chamber is adapted; an area, which is suitable for the growth of cubic boron nitride and an artificial diamond, inside the reaction chamber is broadened; high-quality cubic boron nitride and artificial diamond products are synthesized more easily.

Description

technical field [0001] The invention relates to high-pressure synthesis processing equipment for superhard materials, in particular to a resistance heating body for adjusting the temperature distribution inside a high-temperature and high-pressure synthesis cavity. Background technique [0002] At present, the synthesis of cubic boron nitride and synthetic diamond is completed under high temperature and high pressure conditions. The external ultra-high pressure is sealed and transmitted by the pressure transmission medium to generate ultra-high pressure in the reaction chamber. The resistance heating body on the inner wall of the reaction chamber is provided by the outside The electric current generates heat to generate high temperature, so that the reaction chamber generates high temperature and high pressure to meet the conditions for growing cubic boron nitride and artificial diamond. Since the temperature and pressure suitable for growth conditions are realized through c...

AI Technical Summary

Problems solved by technology

The characteristics of pressure and temperature conduction cause the pressure and temperature distribution in the existing reaction chamber to be unreasonable. As far as the synthesis of cubic boron nitride and artificial diamond is concerned, the heating body currently used is a monolithic structure, and the resistivity of each part is the same. The heat is the same, resulting in low pressure at high temperature and high pressure at low temperature, which is not conducive to the growth of materials. This temperature distribution is not suitable for the pressure distribution and becomes more and more obvious with the expansion of the size of the high temperature and high pressure reaction chamber.

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