Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal

A heating element and melting method technology, which is applied in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of polysilicon melting taking a long time, radial temperature difference increasing, germanium single crystal diameter increasing, etc. , to shorten the complete melting time of polycrystalline raw materials, speed up the complete melting, and increase the output.

Inactive Publication Date: 2003-05-14
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Because in the single crystal furnace that is used to pull single crystal in the prior art, especially the silicon single crystal furnace that pulls single crystal silicon is all a heating element, is installed in the quartz crucible supporter 14 that graphite makes and heat preservation tube 18 In between, the diameter of silicon single crystal and germanium single crystal increases, which causes the radial temperature difference of the thermal field and the vertical temperature difference of the thermal field to increase, so that it takes a long time to completely melt the polysilicon, and the production efficiency is reduced. The melting time of polysilicon has become an urgent technical problem to be solved

Method used

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  • Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal
  • Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal
  • Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal

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Embodiment 1

[0032] The melting method of single crystal silicon is quickened when drawing single crystal silicon of the present embodiment, adds polysilicon 120Kg in quartz crucible, closes furnace chamber, and vacuumizes to 2.66 * 10 3Pa, to the main heating element 7 installed between the quartz crucible supporter made of graphite and the heat preservation cylinder in the silicon single crystal furnace, feed direct current, its voltage is 30 volts, current 2900 amperes, power is 87Kw, from the quartz crucible Side heated quartz crucible. Bottom heating element (disk-shaped heating element) is housed at the bottom of silicon single crystal furnace, feeds direct current in the bottom heating element (disc heating element 22), and its voltage is 20 volts, and electric current 650 amps, power 13Kw, from The bottom of the quartz crucible is heated to completely melt the polysilicon for 5.5 hours.

[0033] The heating element device at the bottom of the present embodiment, which is used to s...

Embodiment 2

[0036] Its method of operation and equipment are basically the same as in Example 1, except that the bottom heating element (disc-shaped heating element) is fed with direct current, its voltage is 30 volts, and the current is 400 amperes. Adding the power of the main heating element, the total power is 100KW , 120kg polysilicon complete melting time is 6 hours.

Embodiment 3

[0038] Its method of operation and equipment are basically the same as embodiment 1, only difference is that the bottom heating element (disc-shaped heating element) feeds direct current, its voltage is 60 volts, current 883 amperes, add main heating element power, total power is 100KW, 120kg polysilicon complete melting time is 4.5 hours.

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Abstract

The present invention relates to a method of speeding melting of polycrystalline raw material and the bottom heater for pulling monocrystal. The method comprises leading DC current to bottom heater while leading DC current to the main heater, so that the quartz crucible is heated from both lateral side and bottom. The bottom heater comprises one disc heating body and two electrodes. The present invention can short the melting time of polycrystalline material and save electric power, and thus increase the yield of monocrystal silicon or germanium.

Description

(1) Technical field [0001] The present invention relates to a method and a device for accelerating the melting of polycrystalline raw materials when pulling single crystals, more specifically, when pulling single crystals of silicon and germanium, the method of accelerating the melting of polycrystalline silicon and germanium and its installation at the bottom of the single crystal furnace heating stuff. (2) Background technology [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14
Inventor 屠海令周旗钢张果虎吴志强方锋戴小林
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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