Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bottom heater for pulling monocrystal

A heating element and single crystal technology, applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of polysilicon melting taking a long time, increasing radial temperature difference, increasing the diameter of germanium single crystal, etc. , to achieve the effect of shortening the complete melting time of polycrystalline raw materials, speeding up complete melting and increasing production

Inactive Publication Date: 2005-05-04
GRINM SEMICONDUCTOR MATERIALS CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Because in the single crystal furnace that is used to pull single crystal in the prior art, especially the silicon single crystal furnace that pulls single crystal silicon is all a heating element, is installed in the quartz crucible supporter 14 that graphite makes and heat preservation tube 18 In between, the diameter of silicon single crystal and germanium single crystal increases, which causes the radial temperature difference of the thermal field and the vertical temperature difference of the thermal field to increase, so that it takes a long time to completely melt the polysilicon, and the production efficiency is reduced. The melting time of polysilicon has become an urgent technical problem to be solved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bottom heater for pulling monocrystal
  • Bottom heater for pulling monocrystal
  • Bottom heater for pulling monocrystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The melting method of single crystal silicon is quickened when drawing single crystal silicon of the present embodiment, adds polysilicon 120Kg in quartz crucible, closes furnace chamber, and vacuumizes to 2.66 * 103 Pa, to the main heating element 7 installed between the quartz crucible supporter made of graphite and the heat preservation cylinder in the silicon single crystal furnace, feed direct current, its voltage is 30 volts, current 2900 amperes, power is 87Kw, from the quartz crucible Side heated quartz crucible. Bottom heating element (disk-shaped heating element) is housed at the bottom of silicon single crystal furnace, feeds direct current in the bottom heating element (disc heating element 22), and its voltage is 20 volts, and electric current 650 amps, power 13Kw, from The bottom of the quartz crucible is heated to completely melt the polysilicon for 5.5 hours.

[0034] The heating element device at the bottom of the present embodiment, which is used to sp...

Embodiment 2

[0038] Its operation method and equipment are basically the same as embodiment 1, only difference is that the bottom heating element (disc-shaped heating element) feeds direct current, its voltage is 60 volts, and current 883 amperes, add main heating element power, total power is 100KW, 120kg polysilicon complete melting time is 4.5 hours.

Embodiment 3

[0040] Its operation method and equipment are completely the same as embodiment 1, only difference is heating and melting 120kg polycrystalline germanium, and the time of complete melting is 1 hour.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The present invention relates to a method of speeding melting of polycrystalline raw material and the bottom heater for pulling monocrystal. The method comprises leading DC current to bottom heater while leading DC current to the main heater, so that the quartz crucible is heated from both lateral side and bottom. The bottom heater comprises one disc heating body and two electrodes. The present invention can short the melting time of polycrystalline material and save electric power, and thus increase the yield of monocrystal silicon or germanium.

Description

(1) Technical field [0001] The invention relates to a device for accelerating the melting method of polycrystalline raw materials when pulling single crystals, more specifically, when pulling single crystals of silicon and germanium, accelerating the melting method of polycrystalline silicon and polycrystalline germanium and the heat generated at the bottom of the single crystal furnace body. (2) Background technology [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/14
Inventor 屠海令周旗钢张果虎吴志强方锋戴小林
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com