250 results about "Zinc selenide" patented technology

An ftheta lens containing a first lens group having an object-side convex positive lens, a second lens group having an object-side concave negative lens, a third lens group having a positive refractive power, the third lens group being a single positive lens, an assembly of a positive lens and a negative lens or another assembly of a positive lens and another positive lens. The lens components satisfy the conditions (a) to (c);where f2 is the focal length of the second lens group, f3 is the focal length of the third lens group, f is the focal length of the whole lens system and d is the distance from the front focus to the image plane. The material of the lens is zinc selenide (ZnSe) or germanium (Ge). Adoption of an aspherical lens facilitates the design of the ftheta lens.

The invention discloses and proposes a high-efficiency quantum dot light emitting diode with a self-assembly polymer hole transmission layer structure. Except a positive electrode and a negative electrode, the high-efficiency quantum dot light emitting diode comprises a three-layer structure: a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer, wherein one end of the quantum dot light emitting layer is connected with the hole transmission layer, the other end of the quantum dot light emitting layer is connected with the electron transmission layer, the electron transmission layer is organic nanoparticles after doped, the hole transmission layer is formed by doping a monomer, a polymer, small-molecule, inorganic oxidized metal nanoparticles or a two-dimensional nanometer material into poly(3,4- ethylenedioxythiophene monomer), a quantum dot is quantum dots of zinc sulfide, zinc selenide, cadmium sulfide, cadmium selenide, cadmium telluride, mercury sulfide, mercury selenide, mercury telluride or core-shell nanometer structured cadmium selenide-zinc sulfide, cadmium sulfide-zinc sulfide, cadmium sulfide-zinc selenide and graphene thereof and the like, and the negative electrode is glass or polyethylene terephthalate (PET) with a layer of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) or graphene.

In a process of forming a capped crystal structure, a precursor solution is heated. The solution comprises a mixture of zinc (Zn) precursor, selenium (Se) precursor, precursor for a dopant, glutathione (GSH), and water. The dopant comprises a transition metal (M). The molar ratio of Zn:Se in the solution may be about 10:3 to about 10:5. The solution is heated for a first period sufficient to allow Zn(M)Se crystal core to form. After the first period of heating, more zinc precursor and GSH are added to the heated solution, and the solution is heated for a second period sufficient to form ZnS crystal shell on the Zn(M)Se crystal core. GSH is added in a sufficient amount to form a GSH layer around the Zn(M)Se / ZnS quantum dot.

The invention belongs to the technical field of material and energy and particularly relates to three-dimensional porous carbon-coated zinc selenide material for lithium ion battery anodes and a preparation method of the material. The preparation method comprises the specific steps of sintering zinc-based zeolite imidazate metal organic framework material (ZIF-8) as a precursor or template with selenium powder under the protection of an inert atmosphere at high temperature for a certain time, and carrying out synchronous selenization and carbonization to finally prepare the carbon-coated zinc selenide composite material. The composite material prepared herein and the preparation method thereof provide effective composition of zinc selenide and graphite carbon, the component ingredients generate great interfacial coupling effect, volume expansion effect of the zinc selenide material during charging and discharging can be effectively relieved and inhibited, the conductivity of the material is improved, and accordingly the composite material has very high specific capacity and excellent cycle stability and rate performance when applied as lithium ion battery anode material. The preparation process is simple, the preparation conditions are mild, and the cost is low.

The invention provides a compound polishing powder of a polishing optical element, a preparation method and a polishing process, belonging to expendable material used for polishing the optical element, the preparation method and the polishing process of the polishing powder; wherein, the polishing powder comprises 0.5-3 of Cr2O3 powder and 1 of Al2O3 according to the weight proportion; the granularity of the Cr2O3 powder is ranging from 0.05 microns to 0.10 microns and the granularity of the Al2O3 powder is ranging from 0.05 microns and 0.10 microns; the polishing process comprises the steps as follows: 1) installing polishing formworks for the optical element; 2) filling the polishing powder; 3) arranging a lens disc; 4) fixing the lens disc; 5) rubbing and polishing. The polishing formwork comprises 500 of polishing asphalt and 20-200 of Al2O3 according to the weight parts; in the polishing process, the polishing powder and the polishing formwork can be used for polishing the optical element which is made of zinc selenide, with the surface smoothness of more than 20-10.

The present invention relates to a method for microwave-aided quickly synthesizing zinc selenide fluorescence quantum point. Said method uses water as solvent, and adopts the following steps: mixing zinc salt or zinc oxide and water-soluble mercaptocompound, injecting soduim hydrogen selenide or potassium hydrogen selenide produced by adopting sodium borohydride or potassium borohydride and zinc powder and making them produce reaction to obtain zinc solenide ZnSe precursor solution, then placing said solution in a closed teflon tank and making reaction in a temperature-controllable and pressure-controllable microwave reactor so as to quickly synthesize ZnSe fluorescence quantum point.

The invention discloses a vacuum system for laser processing, aiming to provide a technical proposal for solving the problem that a plurality of metallic materials can not be processed by laser in the unprotected condition: the system mainly comprises a vacuum tank, a vacuum pumping and gas filling component matched with the vacuum tank and a computer control module (1) used for controlling and connecting the vacuum tank and the component. The vacuum system can realize the laser processing operation on two-dimensional surface in vacuum environment or shielding gas condition and has the advantages of low laser absorptivity, best transmissivity and long service life by adopting the laser window with zinc selenide lens, improved efficiency of the vacuum pumping, enhanced efficiency and quality of the laser processing by adopting the Root's vacuum pump and rotary mechanical pump, convenient operation, high reliability and favorable guarantee of laser processing quality by adopting the vacuum sensor and the vacuum manometer to read the vacuum degree of the vacuum tank, convenient operation, friendly interface, enhanced automation degree, performance stability and reliability of laser processing, thus being also convenient for integration and control with the other systems by adopting the computer control management.

A method for synthesizing cadmium selenide or zinc selenide quantum dots from selenium dioxide is to add the selenium dioxide precursor solution into the fatty acid cadmium or fatty acid zinc precursor solution under stirring, and react at 150-320° C. After the end, it is separated and purified with low carbon alcohol. The method completely does not use alkylphosphine and other environmentally harmful solvents and surfactants, and can obtain high-quality quantum dots with narrow size distribution.

The invention relates to a touch screen cover plate and a manufacturing method thereof. The touch screen cover plate comprises a substrate, a reflecting layer, and an ink layer. The reflecting layer is formed on one surface of the substrate. The reflecting layer is arranged on the periphery of the edge of the substrate. The reflecting layer is a metal elemental film or a compound film. The compound film is one selected from an oxide film, a fluoride film, a zinc sulfide film, a zinc selenide film, a titanium nitride film, a silicon carbide film, a lanthanum titanate film, a barium titanate film, a strontium titanate film, a praseodymium titanate film, and a cadmium sulfide film. The ink layer is on the reflecting layer, and the ink layer can reflect light which passes through the reflecting layer back to the reflecting layer. The touch screen cover plate has relatively high reflectivity, so glossiness of the touch screen cover plate is good.

The invention relates to a medium wave infrared 30 times continuous zooming optical system without a rear fixed group. The optical system consists of a vari-focal objective lens and a repeater group from an object side to an image side; the vari-focal objective lens consists of a front fixed group lens, a variable time group and a compensating group, the focal powers of the three groups of lenses are distributed into a positive structure, a negative structure and a positive structure in sequence, and the zoom function is realized by the axial movement of the variable time group and the compensating group; the repeater group consists of four lenses, the first lens is a double-convex silicon positive lens, the second lens and the third lens are falcate germanium negative lens facing to the image side, and the fourth lens is a zinc selenide positive lens with the convex surface facing to the image side and is used for repeating an image and stabilizing an image surface in a zooming process. According to the optical system, the double-component mechanical compensation zooming without the rear fixed group and the secondary imaging technology are adopted, the 30 times of large zooming ratio is realized, the focal distance can be changed continuously in a range from 17.5mm to 525mm, the maximum stroke of the zooming group is 106mm, the maximum stroke of the compensating group is 50mm, the total optical length of the system is 350mm, and 100% of cold stop efficiency is realized.

The invention discloses a middle-infrared waveband transmission type sub-wavelength metal grating, which belongs to the technical field of function material and device. The metal grating comprises a zinc selenide glass substrate and a metal film which is located on the surface of the zinc selenide glass substrate and is provided with a periodicity hole structure; and in the periodicity hole structure, radius r of single hole is smaller than 1 / 2 of hole period P, and the hole period P is 1-10mu. The middle-infrared waveband transmission type sub-wavelength metal grating uses a sub-wavelength periodicity structure of less than infrared wavelength to realize selective transmission of infrared rays in the middle-infrared waveband of 2.5-25mu, and meanwhile shields the function of microwave millimeter waveband electromagnetic wave. The middle-infrared waveband transmission type sub-wavelength metal grating has the characteristics of simple structure and easy implementation, and can be applied to infrared detection device requiring electromagnetic shielding.

The invention discloses a preparation method of a zinc selenide polycrystalline material for single crystal growth. The zinc selenide polycrystalline material is prepared from blocky zinc and blocky selenium of which the purities are over 99.999 percent as raw materials in an electronic-grade quartz ampoule. The preparation method comprises the following steps: removing impurities on the inner wall of the ampoule; feeding the zinc and the selenium in a molar ratio of (1.0-1.05):1.0 into the ampoule; feeding a reaction promoter of which the volume concentration is 3-12mg.cm<-3> into the ampoule; evacuating the ampoule, sealing the ampoule, horizontally standing the ampoule in a tube furnace, and quickly raising the temperature to between 94 and 1,000 DEG C; and after maintaining the temperature, cooling the ampoule to a room temperature to generate a large amount of high-purity zinc selenide polycrystalline powder. The zinc selenide polycrystalline powdery material prepared by the invention has the components of Zn and Se, with high purity of over 99.999 percent, in a ratio of 1.0:(1.0-1.03), and can be directly used as a growing raw material of a zinc selenide single crystal. The preparation method has the advantages of simple process, low cost and wide application range.

The invention relates to a method for the aqueous phase synthesis of a manganese-doped zinc selenide adjustable-colour fluorescent quantum dot. Firstly, MnSe / ZnSe crystal nucleus is generated; and then, a method of stabilizer coating and the epitaxial growth of a ZnSe shell is used, the separation of crystal nucleation and growth steps is controlled to regulate the shell framework growth mode andthe reaction time, and an MnSe:ZnSe quantum dot is synthesized in the aqueous phase, thus an Mn ion 4T1-6A1 fluorescence emission center is strengthened (Mn / Zn mutual-melting interface) to increase the quantum yield to 4.8%, and the fluorescence launch emission spectrum is controlled and adjusted to 602 nm from 572 nm by prolonging the epitaxial growth time of the ZnSe shell. The invention has simple preparation technology, requires simple production equipment and is easy to realize industrial production.

The invention discloses a back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector. The detector is characterized by comprising a zinc selenide substrate and a mercury cadmium telluride sheet fixed on the substrate by epoxy glue, wherein one face of the mercury cadmium telluride sheet, which is in contact with the substrate, is provided with an anodized layer and a ZnS anti-reflection layer, and the double-layer passivation surface on the surface of the mercury cadmium telluride sheet forms an a photosensitive element area array and a signal extraction electrode area and a common electrode area which are respectively positioned at both ends of a photosensitive element by photoengraving. The signal extraction electrode area and the common electrode area are both extracted from the back side of a light collection surface, an indium bump grows in a specified area, another indium bump grows on a signal reading circuit board, and the indium bumps are interconnected. An indium bump of a chip electrode and an indium bump of an electrode plate are connected together. An indium layer, an aurum layer and indium bumps are orderly grow on the signal electrode area and the common electrode area, thereby forming the back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector.

A housing for a portable electronic device includes a molded base and a nano-particle coating. The nano-particle coating is formed on the molded base. The nano-particle coating has nano-particles comprising a material selected from the group of zinc sulfide (ZnS), cadmium sulfide (CdS), tellurium sulfide (TeS), zinc selenide (ZnSe), cadmium selenide (CdSe), cerium oxide (CeO2), zinc oxide (ZnOx), tin oxide (SnO2), zinc-europium orthosilicate (Eu—ZnSiOx), barium-magnesium-europium aluminate (BaMgAlOx—Eu), and gadolinium-yttrium-europium borate ((Y, Gd)BO3—Eu), the nano-particles have predetermined sizes for producing different color.

Provided is a selenium precursor liquid which is achieved by the preparation of heating and dissolving the elemental selenium in oleoyl morpholine under the protection of inert gas. The process for the preparation of cadmium selenide or zinc selenide quantum dots with the selenium precursor liquid is to generate pyrolytic reaction by stirring and mixing the selenium precursor liquid and fatty acid cadmium or fatty acid zincum precursor liquid under the protection of inert gas at a temperature of 150 DEG C to 330 DEG C, and the last is to separate and purify the mixture with low carbon alcohols. The dissolving capacity of the oleoyl morpholine for the elemental selenium is strong, the compatibility of the oleoyl morpholine with other green common solvents is perfect, which can increase the volume productivity of selenide nanocrystalline, thereby achieving quantum dots with relatively narrower size and higher quality.

The invention provides a compact type double-view-field medium wave infrared athermalization lens. The lens is a one-time imaging lens which is simple in zooming mode, stable in imaging quality and capable of avoiding a heat out-of-focus phenomenon. According to the technical scheme, an infrared optical glass ball cover (2) is arranged between an object plane (1) and a front fixed mirror set (3), the front fixed mirror set is composed of a silicon positive lens and a germanium negative lens, a zooming mirror set (4) which always moves on an optical axis front and back in the zooming process is a biconcave negative lens made of germanium materials, a rear fixed mirror set comprises a biconvex positive lens made of zinc selenide materials and a crescent negative lens made of germanium materials, and the side, close to the object plane, of the biconvex positive lens (501) is an aspheric surface. The ball cover, the front fixed mirror set, the zooming mirror set (4), the rear fixed mirror set and a temperature diaphragm (6) are sequentially arranged through paring combination of the regular lens materials and matching of the linear expansion coefficient alpha L and the length L of lens cone materials, and a complete imaging system is jointly formed.

The invention discloses a long-wave infrared continuous zoom lens comprising a first lens group with positive diopter, a second lens group with negative diopter, a third lens group with positive diopter and a fourth lens group with positive diopter, wherein the first lens group is a fixed group and is formed by a falcate germanium lens with a convex surface which faces to an object side, and a magnification group which can change a system focus is formed by the second lens group and the third lens group; wherein the second lens group comprises a plano-concave zinc selenide negative lens with a concave surface which faces to the object side and a concavoconcave germanium lens; the third lens group comprises a falcate germanium lens with a concave surface which faces to the object side; the fourth lens group is a focus group which comprises a falcate germanium lens with a concave surface which faces to the object side; the focus of the zoom lens is F, the focus of the first lens group is F1, and the F / F1 is larger than 0.25 and is smaller than 0.75. The long-wave infrared continuous zoom lens has simpler structure, is easy to manufacture and process and can effectively reduce production cost.

Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

A technology for machining the non-spherical optical element with Zinc selenide and Zinc sulfide features use of numerally controlled lathe and arc diamond cutter. Its technological steps include blanking, coarse grinding, designing and manufacturing attractive fixture, semi-fine machining, fine machining, testing surface type, and trimming. It has high productivity.

The invention discloses a reflecting type optical isolator and laser machining equipment with the same. The reflecting type optical isolator comprises a birefringent crystal, a first half wave plate, a beam combining shaping lens group, an optical isolation module, a second half wave plate and a 90-degree phase delay mirror which are arrayed in sequence in the optical-axis direction. The birefringent crystal is used for separating P polarized light from S polarized light. The first half wave plate and the second half wave plate are used for carrying out rotating on a linear polarization direction. The beam combining shaping lens group is used for carrying out beam combining shaping on two P polarized light beams to form a P polarized light beam. The optical isolation module comprises a plurality of zinc selenide plane mirrors which are arranged by Brewster angles and is used for refracting the P polarized light and reflecting the S polarized light. The 90-degree phase delay mirror is used for converting linearly-polarized light into circularly-polarized light. According to the reflecting type optical isolator, the service life of a laser device can be prolonged, and the machining quality and the yield of the laser machining equipment are improved.

The invention relates to a polishing mold of an optical element, which belongs to a mold of the optical element which is rubbed and contacted with the surface of a polished substance in the polishing process and a method for preparing the same. The invention in particular relates to a polishing mold of a zinc selenide optical element. The polishing mold consists of 500 portions of polishing asphalt and 20 to 200 portions of alumina powder according to weight percentage; the polishing asphalt is No. 55-No. 82 polishing asphalt; the optimal polishing asphalt is 914CP polishing asphalt, namely No. 64 polishing asphalt, which is produced by American Universal Optical Co., Ltd.; and the granularity of the alumina powder is between 0.50 and 2.00 microns. The method comprises the following preparation steps: the polishing asphalt is heated, melted, evenly mixed, solidified and excavated with a grinding material storage groove. The polishing asphalt provided by the invention can ensure that the finishing degree of the polishing surface of the zinc selenide optical element reaches over 10 / 5 which is obviously higher than the precision requirement of 40 / 20 by US military specification.

The invention discloses a transition metal selenide modified molded demercuration material and a preparation method thereof. The transition metal selenide modified molded demercuration material comprises a molded carrier and an active component loaded on the molded carrier, wherein the active component is a transition metal selenide, and the transition metal selenide is selected from one or more of copper selenide, nickel selenide, zinc selenide or iron selenide. The preparation method comprises the following steps: firmly and uniformly loading a certain amount of a transition metal on the molded carrier by adopting a wet chemical reduction method, and converting the transition metal into the transition metal selenide by adopting an in-situ selenylation method, thereby obtaining the transition metal selenide modified molded demercuration material. The preparation method is simple, the obtained transition metal selenide modified molded demercuration material is large in adsorption capacity, good in mechanical property, fluid property and plasticity, and is suitable for different demercuration application occasions, and the secondary release risk of mercury is reduced.

The present invention discloses a preparation method of pure yellow fluorescence water-soluble doped zinc selenide quantum dots, wherein Mn:ZnSe quantum dots are doped with another impurity Ag<+>, such that the intrinsic fluorescence and the defect fluorescence of the ZnSe quantum dots are inhibited while the original intensity of the impurity fluorescence of Mn is maintained so as to prepare the pure Mn yellow fluorescence doped ZnSe quantum dots, and the prepared quantum dots have good water solubility and good fluorescence stability, and only have the one strong Mn fluorescence emission peak. According to the present invention, the one-step synthesis of the pure yellow fluorescence doped ZnSe quantum dots in the aqueous solution is achieved, and the preparation method has advantages of simple operation, good repeatability, green environmental protection, low cost and the like, and can be used for mass production of the quantum dots.

The invention relates to a method for preparing monodisperse zinc selenide particles, which belongs to the technical field of inorganic material preparation. According to the invention, the monodisperse zinc selenide particles are prepared by using a double-crucible method and combining the electrostatic spinning technique with the selenizing technique. The invention comprises three steps of (1) a spinning solution preparation: adding Zn(NO3)2.6H2O and PVP (polyvinyl pyrrolidone) to a DMF (dimethyl formamide) solvent to form the spinning solution; and (2) preparing composite ZnO nano-fibers by the electrostatic spinning technique, and then carrying out the heat treatment to obtain the composite ZnO nano-fibers; and (3) preparing the monodisperse ZnSe particles: adopting the double-crucible method, carrying out the selenizing process on the ZnO nano-fibers by selenium powder to obtain the monodisperse ZnSe particles with good crystal forms and a diameter of 2.3+ / -0.15 microns. The monodisperse ZnSe particle is an important functional material, and will be applied to solar cells, light-emitting diodes, laser devices, biomedicine, panel display, storage and transmission of information, flashers and catalysis. The preparing method is simple and easy, can be used in mass production, and is wide in application prospect.

The invention discloses a spectral selective radiation infrared stealth material which sequentially comprises a substrate, an aluminum nitride layer and a dielectric layer, the dielectric layer is composed of a plurality of dielectric layers A and dielectric layers B which are arranged alternately; the dielectric layer A is made of any one of germanium, tellurium and silicon, and the dielectric layer B is made of any one of zinc sulfide, zinc selenide, magnesium fluoride, barium fluoride and calcium fluoride. The preparation method of the material comprises the following steps: (1) cleaning and drying the substrate; (2) preparing an aluminum nitride layer on the surface of the substrate by adopting a magnetron sputtering or tape casting method; and (3) adopting magnetron sputtering or electron beam evaporation, depositing a dielectric layer A on the aluminum nitride layer firstly, then depositing a dielectric layer B on the aluminum nitride layer, depositing the dielectric layer A andthe dielectric layer B repeatedly and alternately until the designed number of layers is reached, and completing preparation of the infrared stealth material. The spectral selective radiation infraredstealth material disclosed by the invention considers the requirements of low emissivity and radiation heat dissipation, and has important significance for better realizing infrared stealth.

The invention relates to a double-view-field / double-color infrared thermal difference eliminating optical system based on a harmonic diffractive optical element, in particular to a thermal difference eliminating optical system with cold diaphragm efficiency being approximately 100 percent, belonging to the field of infrared thermal imaging. The working band of the system is 4.4-5.4mum / 7.8-8.8mum, the focal length of the system is 183mm / 61mm, and the operating temperature of the system is minus 40 DEG C to 60 DEG C. The F values of optical systems with a wide view field and a narrow view field are identical (2.68), one double-color infrared focal plane detector is shared, and the cold diaphragm efficiency is approximately 100 percent. The effect of eliminating thermal difference is realized via a micro movement zooming lens group, so that MWIR (medium wave infrared rays) and LWIR (long wave infrared rays) have the same focus for imaging within respective working scopes. The structure comprises an object lens group, a zooming lens group, a relay lens group, double-color infrared detector window glass, a diaphragm and a double-color infrared detector. The system comprises one harmonic diffraction plane and three even non-spherical surfaces, and only three commonly used infrared materials are used as optical materials, i.e. germanium, zinc selenide and calcium fluoride.

The invention discloses a preparation method of a zinc selenide nanometer photocatalyst and application of zinc selenide nanometer photocatalyst. A solvothermal method is adopted for preparing the ZnSe nanometer photocatalyst in a high pressure reactor, and the ZnSe nanometer photocatalyst is obtained through the control of the volume ratio of solvent to deionized water and the filling degree of the high pressure reactor, and then Rhodamin B solution containing the ZnSe nanometer photocatalyst is irradiated by an ultraviolet lamp to be subjected to photocatalytic degradation. The method has the advantages that the operation is simple, the energy consumption is low and the environment pollution is low; besides, the used raw materials and the solvent for preparation are low in cost and have low toxicity, and large-scale production can be realized in the preparation process; the photocatalysis technology is a novel environment-friendly technology, semiconductor photocatalysis has attractive application prospect in the aspects of degradation of organic dyestuffs, wastewater treatment and the like, and great social and economic benefits can be generated.

The invention discloses a two-wave-band infrared optical system which comprises a first lens, a second lens, a third lens, diaphragm, a fourth lens, a fifth lens and a sixth lens which are coaxially arranged in sequence along the light incidence direction, wherein the first lens and the fifth lens are crescent negative lenses; the second lens, the third lens and the fourth lens are crescent positive lenses; the sixth lens is a biconvex lens; the rear surface of the third lens and the front surface of the fourth lens are nonspherical surfaces, and the surfaces of the other lenses are spherical surfaces; the first lens and the second lens are made from germanium; the third lens, the fourth lens and the sixth lens are made from chalcogenide glass; the fifth lens is made from zinc selenide. The system realizes two-wave-band imaging with the chalcogenide glass; meanwhile, the problem of correction of axial chromatic aberration and spherical aberration in medium and long bandwidth wave-band infrared optical system is solved, the identification efficiency of a target is improved, and the false alarm rate is reduced; the system is compact in structure and high in transmittance; an x ray machine is convenient to assemble and adjust; the two-wave-band infrared optical system is suitable for being popularized and applied.

The invention discloses a preparation method of zinc selenide with high optical quality, which belongs to the technical field of inorganic block body material preparation. The method comprises the following steps: putting zinc into a deposition furnace; pumping the vacuum; raising the temperature in a deposition chamber; using argon as carrying gas of reaction raw material gas; introducing H2Se gas and the argon into the deposition chamber through a mass flowmeter (the mol ratio of zinc to H2Se is between 0.8 and 1.2, the deposition reaction is carried out on the inner wall of the deposition chamber, and the zinc selenide begins to grow); maintaining the unchanged mol ratio of zinc to H2Se and the constant pressure in the furnace; carrying out deposition for 15 to 25 days; and then, lowering the temperature to the room temperature to obtain the zinc selenide with high optical quality. The invention effectively solves the problem of powder generation in the process of preparing the zinc selenide through chemical vapor deposition, the impurities mixed in products are eliminated, the materials have high infrared transmission rate and low absorption factor, and the optical quality is greatly improved.