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7 results about "Zinc selenide" patented technology

Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se). It is an intrinsic semiconductor with a band gap of about 2.70 eV at 25 °C (77 °F). ZnSe rarely occurs in nature, and is found in the mineral that was named after Hans Stille called "stilleite."

Zinc selenide aspherical lens and numerical control polishing process thereof

The application relates to the technical field of optical processing, and provides a zinc selenide aspheric lens and a numerical control polishing process thereof, which is carried out by using a numerical control polishing machine, comprises main steps of rough polishing, fine polishing, finishing and the like, and process parameters are adjusted according to the characteristics of zinc selenide, so that the zinc selenide aspheric lens with a diameter of less than 320 mm can be polished, the global surface type PV of the zinc selenide aspheric lens is controlled to be less than 0.3 microns by means of the numerical control polishing machine, white zinc metal particles generated due to heating of the lens surface in the polishing process are avoided, the surface smoothness of the finished product reaches 60 / 40, and the laser level is reached. The application also has reference significance for polishing the surface of zinc selenide with a diameter of more than 320 mm.
Owner:安徽光智科技有限公司

Hydrogel materials, methods of making and uses thereof

The technical field of the application is a device for medical, oral or dental hygiene. The application discloses a hydrogel material and a preparation method and application thereof. The preparation method of the hydrogel material comprises: preparing a ZnSe / rGO heterojunction by a hydrothermal method through ZnSe and rGO, wherein the ZnSe is a semiconductor material zinc selenide, and the rGO is a conductor material reduced graphene oxide; and uniformly dispersing the ZnSe / rGO heterojunction in a GelMA matrix, and loading and fixing the ZnSe / rGO heterojunction on the GelMA to obtain a hydrogel material Z / r@G, wherein Z refers to ZnSe, r refers to rGO, and G refers to GelMA, and the GelMA is methacrylated gelatin. The application develops a preventive strategy capable of delaying or reducing cell aging, which can not only avoid the influence of excessive removal of aged cells on later bone repair, but also widely exert an anti-aging effect.
Owner:SICHUAN UNIV

A method for hot isostatic pressing of zinc selenide with consideration of optical and mechanical properties

PendingCN122358171AZinc selenideChemical vapor deposition
This invention belongs to the field of infrared optical material processing and post-processing technology, and more specifically relates to a hot isostatic pressing (HIP) method for zinc selenide that balances optical and mechanical properties. The invention places a ZnSe bulk material prepared by chemical vapor deposition in a hot isostatic pressing furnace and performs non-equilibrium HIP treatment under an inert atmosphere to obtain zinc selenide with balanced optical and mechanical properties. The four-stage heat treatment mechanism with stepwise temperature and pressure response—"pressurizing first and then heating"—prevents brittle cold-pressing fracture, and "isostatic holding and cooling" blocks the elastic rebound of high-temperature healed pores in the early cooling stage, perfectly fixing the densified crystal lattice morphology and achieving the technical effect of balancing optical and mechanical properties.
Owner:YANSHAN UNIV

Preparation method and application of ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst

ActiveCN118218002BZinc selenideSulfide
This invention discloses a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst: Step 1, a certain amount of ZnCl2, InCl3·4H2O and oleylamine are mixed and subjected to a first deoxygenation treatment. A mixed solution of 1-dodecanethiol and tert-dodecylmercaptan is rapidly injected under nitrogen conditions and reacted at a certain temperature for a certain time to obtain ultrathin zinc indium sulfide nanosheets. After centrifugation and washing, the nanosheets are redissolved in a certain amount of n-hexane. Step 2, zincacetate, oleic acid and 1-octadecene are mixed and subjected to a second deoxygenation treatment. The mixture is then heated to a certain temperature under nitrogen conditions, reacted for a certain time, and cooled. A certain amount of the solution obtained in step S1 is rapidly injected and subjected to a third deoxygenation treatment. The mixture is then heated under nitrogen conditions, and a certain amount of a mixed solution of Se and TOP is slowly injected at a certain rate. The mixture is then kept at a certain temperature and reacted for a certain time. After the injection process is completed, the reaction is allowed to continue. Finally, the solution is cooled to room temperature and centrifuged to obtain ZIS / ZnSeHNSs.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Preparation method of double-band antireflection film plated on zinc selenide substrate

A method for preparing a dual-band antireflection coating on a zinc selenide substrate includes the following steps: S1, cleaning the surfaces of the zinc selenide substrate (used as a lens) and the product; S2, placing the lens into a fixture, and then inserting the fixture into the cavity of a vacuum coating machine; S3, starting the vacuum coating machine, evacuating the vacuum, and cleaning the ion source; S4, maintaining the aforementioned vacuum level, depositing a first YF3 film layer on the first surface of the lens; S5, depositing a first ZnS film on the deposited first YF3 film layer. S6, deposit a second YF3 film on the deposited first ZnS film layer; S7, deposit a second ZnS film on the deposited second YF3 film layer; S8, deposit a third YF3 film on the deposited second ZnS film layer; S9, deposit a third ZnS film on the deposited third YF3 film layer; S10, after the deposition is completed, wait for the vacuum chamber to cool to below 60°C and take out the lens with the first deposited side; S11, repeat steps S1 to S10 to deposit the second side of the lens in sequence.
Owner:安徽光智科技有限公司

A high-power laser beam shaping system based on a double-plate hybrid structure

PendingCN122110529AImprove uniformityImprove machining accuracyOptical elementsZinc selenideBeam collimation
The application discloses a Gaussian beam flattening and shaping system based on a double-piece hybrid structure, which comprises a first optical module L1 and a second optical module L2 arranged in sequence along an optical axis; the first optical module L1 is a silicon substrate plate, the back surface of which is integrated with a dielectric metasurface structure for phase modulation of an incident Gaussian beam; the second optical module L2 is made of zinc selenide (ZnSe) material, and the light output surface thereof is a non-spherical curved surface for assisting in correcting wavefront aberration to realize beam collimation. The system of the application realizes miniaturization of a traditional large-volume shaping system through a double-piece hybrid structure of a silicon-based metasurface and a non-spherical surface. The system can convert an input Gaussian beam into a beam with flat-top distribution characteristics, and realize energy uniformity of more than 95% on an output plane, and the edge is steeply cut off. The application is particularly suitable for portable laser processing and precision measurement equipment with strict requirements on volume, weight and spot quality.
Owner:NANJING UNIV

Attenuating sheet, method of making, attenuating sheet wheel assembly, test system and test method

PendingCN122172365AFinal product manufactureOptical filtersPhototestingZinc selenide
The application relates to the fields of infrared optical film technology and precise photoelectric testing technology, and provides an attenuating piece, a preparation method, an attenuating piece wheel assembly, a testing system and a testing method. The application utilizes a first attenuating piece group and a second attenuating piece group to form an attenuating piece, each first attenuating piece in the first attenuating piece group adopts a zinc selenide base material and a nickel film and has high spectral transmittance; each second attenuating piece in the second attenuating piece group adopts a silicon base material, a gold film and a chromium adhesion layer and has high spectral transmittance; the attenuating piece is applied to an infrared detector nonlinearity testing system, different first attenuating pieces and second attenuating pieces can be combined to construct an attenuating assembly with a large dynamic range. The testing system using the attenuating piece can realize automatic scanning of incident photon flux density across more than four orders of magnitude, solves the problems of preparation and system integration of a mid-wave large dynamic range attenuating device, and improves the efficiency and reliability of infrared detector response nonlinearity testing.
Owner:SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES