65 results about "Zinc selenide" patented technology

The invention relates to a three-waveband medium-long wave infrared optical filter and a preparation method, the three-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, and the substrate is located between the front film system and the back film system; the front film system is formed by alternately overlapping germanium layers and zinc selenide film layers; and the back film system is formed by alternately overlapping germanium layers and zinc selenide film layers. According to the invention, the light energy of three wave bands of 3780-4000 nm, 4500-4900 nm and 7850-9500 nm is improved, the luminous flux of other wave bands is well inhibited, the technical problem of infrared filtering windows in some special infrared spectrum detection systems is solved, and a new scheme is provided for the application of the infrared spectrum detection systems.

The invention relates to a dual-band anti-reflection zinc selenide metallized light window and a preparation method thereof, the dual-band anti-reflection zinc selenide metallized light window comprises a front film system, a zinc selenide substrate, a back film system and edge metallized films, the zinc selenide substrate is located between the front film system and the back film system, and the edge metallized films are located at two ends of the zinc selenide substrate; the front film system and the back film system are formed by alternately overlapping zinc sulfide layers and ytterbium fluoride film layers; the edge metallized film is formed by overlapping a chromium film layer, a copper film layer, a nickel film layer and a gold film layer. According to the invention, the two sides of the zinc selenide substrate are respectively provided with an anti-reflection film system structure, so that the light energy of two wave bands of 3500-5000nm and 8000-12000nm is improved; the zinc sulfide and ytterbium fluoride film layer is adopted, so that the stress is lower, and the dual-band anti-reflection optimization effect is better; by improving the edge metallized film stacking structure, the problem that the soft optical material and the metallized film are not firmly combined is solved, and a new scheme is provided for infrared detector welding.

The invention discloses a high-performance super-hydrophobic coating, and relates to the technical field of coating preparation. The high-performance super-hydrophobic coating comprises a composite resin matrix composed of polyurethane and polyethersulfone, and zinc selenide nanoparticles and hydrophobic modified inorganic micro-nanoparticles used for constructing a super-hydrophobic surface are dispersed in the composite resin matrix. Polyether sulfone has good tolerance, can significantly improve the thermal stability and structural strength of the coating in a high-temperature environment, and can be blended and crosslinked with a polyurethane network to form a more stable multiphase composite system, enhance the crack resistance and peel strength of the coating, and effectively improve the adhesive force; the zinc selenide nanoparticles can effectively absorb ultraviolet rays and protect the organic resin matrix from being damaged by ultraviolet radiation. The high-performance super-hydrophobic coating provided by the invention is suitable for outdoor severe environments with high temperature, strong ultraviolet radiation and chemical corrosion risk, and long-term stable protection can be provided for outdoor equipment by coating the surface of the outdoor equipment with the high-performance super-hydrophobic coating to form a protective coating.

The invention belongs to the technical field of super capacitors, and particularly relates to a super capacitor electrode material and a preparation method thereof. Zinc selenide is tightly compounded on an MXene material to obtain the nano composite material, and the zinc selenide is obtained through in-situ conversion of a ZIF-7 precursor. The material realizes a point-line-surface three-dimensional conductive network in which ZnSe nanoparticles, in-situ derived carbon and MXene nanosheets are tightly coupled, has a high-defect carbon structure and an excellent electron conduction path, realizes ultrahigh specific capacitance, excellent rate capability and excellent long cycle stability, and greatly improves comprehensive electrochemical performance.

The invention discloses a zinc selenide leftover material regeneration method and system and a high-purity zinc selenide evaporation material, and relates to the technical field of semiconductor material cyclic regeneration. The zinc selenide leftover material regeneration method sequentially comprises a pretreatment step, a low-temperature devolatilization step, a medium-temperature impurity removal step, an ultrafine crushing step and a vacuum directional sublimation purification step, and the low-temperature devolatilization step is characterized in that the zinc selenide leftover material is heated to a first preset temperature under a dynamic vacuum condition to remove free selenium and elemental zinc impurities; in the medium-temperature impurity removal step, the zinc selenide leftover materials are heated to a second preset temperature to promote lattice recombination of ZnO impurities, a double-temperature-zone vacuum deposition furnace is adopted in the vacuum directional sublimation purification step, the temperature of an evaporation zone is 1100-1150 DEG C, the temperature of a condensation zone is 400-450 DEG C, the steam transmission distance is smaller than 30 cm, and products in the condensation zone are collected. The technical scheme provided by the invention has the advantages of high recycling rate, high purity of the regenerated zinc selenide evaporation material, low energy consumption and high process safety.

The application discloses a tellurium-selenium-zinc plane target material and a preparation method thereof, and belongs to the technical field of target material processing. The method is characterized in that zinc selenide powder is used to dope zinc telluride powder to prepare a tellurium-zinc-selenium target material, so that the target material can be regulated to a normal temperature band gap of 2.15-2.82 eV, and the material has higher light transmittance than zinc telluride. On the other hand, in order to guarantee the uniformity, compactness and mechanical strength of the target material, the preparation method adopts a double-stage heating and pressurizing method to heat and prepare the powder, so that the prepared tellurium-zinc-selenium plane target material has a relative density of more than 96%, high bending strength and good uniformity.

The present invention discloses a CO2 band ultra-low absorption double-sided anti-reflection film and a preparation method thereof, and a CO2 laser band ultra-low absorption double-sided anti-reflection film, wherein the structure of the film is: Air / qHpL / Sub / pLqH / Air; wherein Sub represents a substrate; H represents a high-refractive-index film material ZnSe film layer; L represents a low-refractive-index film layer, and L is a mixed film layer of two low-refractive-index film materials L1 film layer and L2 film layer. The refractive indices of the two low-refractive-index film materials L1 film layer and L2 film layer are both 1-1.6. The low-refractive-index film material L1 film layer and the low-refractive-index film material L2 film layer are made of different materials. The optical thickness ratio of the low-refractive-index film material L1 film layer: the low-refractive-index film material L2 film layer is controlled within a range of 1:3-1:6. The present invention coats a film system on both sides of the zinc selenide substrate and combines two low-refractive index film materials for mixed plating to achieve 10600nm anti-reflection, reduce absorption, and improve transmittance. The average transmittance is greater than 99.7%, the single-side reflection is less than 0.1%, and the absorption is reduced from the original 0.3% to less than 0.1%. The laser damage threshold is tested from the original 6000W / CM 2 Increased to 10000W / CM 2 .

The application relates to the technical field of optical processing, and provides a zinc selenide aspheric lens and a numerical control polishing process thereof, which is carried out by using a numerical control polishing machine, comprises main steps of rough polishing, fine polishing, finishing and the like, and process parameters are adjusted according to the characteristics of zinc selenide, so that the zinc selenide aspheric lens with a diameter of less than 320 mm can be polished, the global surface type PV of the zinc selenide aspheric lens is controlled to be less than 0.3 microns by means of the numerical control polishing machine, white zinc metal particles generated due to heating of the lens surface in the polishing process are avoided, the surface smoothness of the finished product reaches 60 / 40, and the laser level is reached. The application also has reference significance for polishing the surface of zinc selenide with a diameter of more than 320 mm.

A micro-OLED display includes a substrate with a coating made of IR-transparent material such as Zinc Selenide or Zinc Sulfide to allow a pupil tracking camera, which may include photodiodes, to be mounted directly behind the display. The coating is transparent to near infrared (NIR) radiation but opaque to visible light.

The invention relates to the field of chemical oxygen-iodine lasers, in particular to a mid-infrared wavelength conversion method and device of a chemical oxygen-iodine laser. Firstly, a pair of pulsed magnetic field generators is placed on the upper side and the lower side of a gain area of an original continuous wave chemical oxygen-iodine laser; the hydrogen Raman pool is used as a magnetic gain switch to enable the laser to output laser pulses with higher peak power, then 1315nm wavelength laser output by the oxygen-iodine chemical laser is guided into the hydrogen Raman pool, the original 1315nm wavelength laser is converted into 2900nm wavelength laser through Raman scattering to be output, finally, the 2900nm wavelength laser is guided into the vacuum bin containing the iron-doped zinc selenide crystal, and the iron-doped zinc selenide crystal is obtained. And by pumping the iron-doped zinc selenide crystal, the laser with the wavelength of 2900 nm is further converted into intermediate infrared laser pulses with the wavelength of 4000-5000 nm. On the premise that the original laser structure is not influenced, the oxygen-iodine chemical laser has the possibility of being applied to the middle infrared band.

Provided are a design method and a preparation method of a ZnSe substrate 2-5.5 μm high-transmittance thin film. The design method of the ZnSe substrate 2-5.5 μm high-transmittance thin film comprises the following steps: Sa, a film system is designed with 550 nm as a reference wavelength for optical thin film design, and a film stack formula Sub / 0.6(LHL)^2MK / AIR is used, and the film system is plated on both surfaces of the substrate; wherein, Sub is a ZnSe substrate, and AIR represents air, and in the film stack expression: H represents a 1 / 4 wavelength thickness of a high-refractive-index material ZnSe (zinc selenide), L represents a 1 / 4 wavelength thickness of a low-refractive-index material YbF3 (ytterbium fluoride), K represents a 1 / 4 wavelength thickness of a protective layer material Al2O3 (aluminum oxide), and M represents a 1 / 4 wavelength thickness of a connecting layer material Y2O3 (yttrium oxide); Sb, a film layer structure of Sub / YbF3 / ZnSe / YbF3 / ZnSe / YbF3 / Y2O3 / Al2O3 / Air is generated through the input film stack formula; Sc, the film layer thickness is optimized through a thin film design software, and the best film layer thickness is obtained, and the transmittance of the optimized film layer structure reaches a target in a 2-5.5 μm wave band; and Sd, the optimized best film layer thickness is input into a control computer of a film plating machine.

The application relates to a preparation method of a multi-interface coupling indium phosphide quantum dot and an electroluminescent diode, and belongs to the field of semiconductor light emission, display and nanotechnology. In the application, tri (dimethylamino) phosphine is reacted with an indium halide oleylamine solvent at 160 DEG C to 200 DEG C to generate an indium phosphide nanocrystal core, then the temperature is increased to 300 DEG C to 350 DEG C, zinc oleate, tri-n-octylphosphine-selenium and tri-n-octylphosphine-sulfur are gradually injected, and a polar solvent and a crosslinking agent are injected; 3-5 quantum dots are high-temperature fused through interfaces to realize interface coupling, and a multi-interface coupling core-shell indium phosphide / zinc selenide / zinc sulfide quantum dot is obtained. The quantum dot has a unique coupling structure, can effectively inhibit photo-generated exciton Auger recombination, improve the charge transport performance of a quantum dot film, has higher stability and a higher fluorescence quantum yield, and can be used for preparing a high-efficiency electroluminescent diode with high tube efficiency and good working stability.

The present application relates to a kind of three-waveband middle-long wave infrared filter and preparation method, including front film system, substrate and back film system, the substrate is located between the front film system and back film system;The front film system is composed of germanium layer and zinc selenide film layer alternately superimposed;The back film system is composed of germanium layer and zinc selenide film layer alternately superimposed.The present application realizes the light energy promotion of 3780-4000nm, 4500-4900nm, 7850-9500nm middle-long wave three wavebands, and very good inhibits the light flux of other wavebands, solves the technical problem of infrared filter window in some special infrared spectrum detection system, provides new scheme for the application of infrared spectrum detection system.

The application discloses an infrared large-view-field wide-spectrum multi-spectrum imaging spectrometer optical system, which is coaxially arranged in sequence from an object plane to a focal plane as a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a filter wheel; the first lens and the fourth lens are meniscus positive lenses, the second lens, the third lens and the fifth lens are meniscus negative lenses, and the sixth lens is a double-convex positive lens. The application adopts common chalcogenide and zinc selenide crystal infrared materials, corrects aberration and chromatic aberration by optimizing surface shape parameters of each surface and adopting aspheric surfaces, realizes high-quality imaging in a wide waveband range of 2.5-15 mu m, has the characteristics of large view field, small distortion, athermalization and super-long back intercept, is easy to produce and adjust, has strong versatility, and can be applied to the fields of monitoring of chemical harmful gases, environmental protection, agriculture and food safety, medical treatment and health and judicial identification.

The application discloses a kind of high transmittance 9.2-10.7 μm laser broadband antireflection film and preparation method thereof, a kind of high transmittance 9.2-10.7 μm laser broadband antireflection film, its film system structure is:SUB / k1Lk2H1k3Lk4H2 / AIR, wherein, SUB represents zinc sulfide base, AIR represents air, H1 represents zinc sulfide layer, H2 represents zinc sulfide layer, L represents YB layer, YB layer is the mixed film layer of the volume ratio of aluminum-doped YF3 and calcium-doped BaF2 (2-3):1, k1-k4 represent the coefficient of the optical thickness of quarter reference wavelength of each layer.This application high transmittance 9.2-10.7 μm laser broadband antireflection film, average single-side reflectivity is not more than 0.08%, average double-side transmittance is not less than 99.78%, and by film material selection and collocation, film stress is basically eliminated, improve the adhesion of film layer, and the wear resistance of obtained film layer is strong, and high and low temperature resistance is good.

The invention relates to the technical field of animal breeding biology, and discloses a boar semen cryopreservation solution which comprises a boar semen cryopreservation basic diluent, a cryoprotectant and zinc selenide nano-microspheres. The X-ray diffraction pattern of the zinc selenide nano-microsphere is matched with that of a standard card JCPDS37-1463, and the shape of the zinc selenide nano-microsphere is of a multi-level spherical structure with the surface assembled by nano-level particles. The concentration of the zinc selenide nano microspheres is 1 mmol / L. According to the invention, the zinc selenide nano-microsphere with a specific multi-stage spherical structure is applied to the field of cryopreservation of the boar semen for the first time, and the optimal working concentration of the zinc selenide nano-microsphere is determined through experiments. According to the technical scheme, the freezing oxidative stress is effectively relieved from multiple dimensions and multiple target points through the Zn-Se synergistic effect, the comprehensive quality of the frozen and thawed pig sperms is remarkably improved, and an efficient and stable new strategy with a wide application prospect is provided for optimizing the pig sperm freezing preservation technology.

The invention belongs to the technical field of nano material preparation and printing, and particularly relates to indium phosphide quantum dot ink as well as a preparation method and application thereof. According to the preparation method disclosed by the invention, the indium phosphide quantum dot core is firstly synthesized, and then the acrylic acid / polyacrylic acid / acrylate derivative ligand is used for carrying out surface treatment on the indium phosphide quantum dot, so that the surface passivation and stability improvement of the indium phosphide quantum dot and the optimization of the rheological property of the ink are synchronously realized, and the quantum efficiency is improved; the photoluminescence quantum yield is increased by 80% to 100% compared with that of similar InP / ZnSe quantum dots which are not treated by acrylic acid and the like. Indium phosphide / zinc selenide quantum dots treated by acrylic acid and the like are dispersed in an organic solvent to adjust the adaptive concentration to obtain the quantum dot ink, the ink does not need to be added with an additional rheology modifier or a film-forming polymer, the coffee ring effect can be effectively inhibited during drying, and preparation of high-resolution micro-patterns is achieved. The material can be directly used as a color conversion layer to be integrated with a blue micron light-emitting diode chip to form a display device.

The application provides a kind of bismuth selenide / zinc selenide@nitrogen-carbon composite material, its preparation method and application in sodium ion battery, the application first disperses zinc source, bismuth source and organic ligand in organic solvent, solvent hot reaction is carried out, precursor Bi / Zn-MOF is obtained, and then selenization is carried out to obtain Bi2Se3 / ZnSe@NC nanowire cluster, which is in the form of radial rays.The preparation method of the application has high yield and low cost.The product has a radial structure composed of linear structures, which can provide a large specific surface area;During the charging and discharging process, more active sites are provided, the volume expansion problem is solved, the battery has better stability, and the nanomaterial is safe, environmentally friendly, cheap and has other advantages.The material is applied to the negative electrode material of sodium ion battery, has good cycle performance, high energy density and other advantages.

The invention relates to an indium zinc selenium sulfur phosphide quantum dot material, a preparation method and a photoelectrochemical cell, and belongs to the technical field of solar photoelectric conversion, and the preparation method comprises the following steps: synthesizing indium phosphide quantum dots; synthesizing indium phosphide / zinc selenium sulfur-zinc vacancy quantum dots; synthesizing a series of surface ligand exchanged indium phosphide / zinc selenium sulfur-zinc vacancy quantum dots; preparing a series of novel quantum dot sensitized photo-anodes and assembling the photo-anodes into a photoelectrochemical cell; the invention also comprises an indium phosphide / zinc selenium sulfur-zinc vacancy-chlorine passivation quantum dot material and a photochemical cell using the material as a photoanode. The preparation method has the beneficial effects that the separation / transfer efficiency of photo-generated excitons in the quantum dots is reasonably regulated and controlled by introducing vacancy sites and a surface ligand exchange strategy, and the problems of fast recombination of photo-excited electrons and holes and low photoelectric conversion efficiency of traditional quantum dots are effectively solved.

The application discloses a preparation method of amorphous MOF derived ZIF and application thereof, and the preparation method comprises the following steps: preparing zinc nitrate hexahydrate and cobalt nitrate hexahydrate into solution A, preparing 2,5-dihydroxyterephthalic acid into solution B, carrying out a solvothermal reaction of solution A and solution B to obtain amorphous ZnCo-MOF powder; preparing the amorphous ZnCo-MOF powder into suspension C, dissolving 2-methylimidazole in an ethanol aqueous solution, adding triethylamine to form solution D, adding the suspension C into the solution D to react to obtain ZnCo-ZIF hollow nanosphere powder; placing the ZnCo-ZIF hollow nanosphere powder into argon for annealing treatment to obtain nitrogen-doped porous carbon hollow nanosphere material; uniformly mixing the nitrogen-doped porous carbon hollow nanosphere powder with selenium powder, and then placing the mixture into argon for annealing treatment to obtain zinc selenide / cobalt selenide@nitrogen-doped porous carbon hollow nanosphere material. The zinc selenide / cobalt selenide@nitrogen-doped porous carbon hollow nanosphere prepared by the method is mainly applied to preparation of a negative electrode material of a high-performance sodium ion battery.

The utility model relates to a super-structure surface optical filter based on a ZnSe substrate, comprising a substrate, the material of the substrate is zinc selenide, the front surface of the substrate is provided with a germanium layer, the germanium layer is provided with a micron structure unit, the micron structure unit is formed by etching the germanium layer, the back surface of the substrate is provided with an infrared anti-reflection AR film, and the infrared anti-reflection AR film is provided with a ZnSe layer. An aluminum film is arranged on the upper surface of the micron structure unit, the thickness of the aluminum film is 18-22 nm, a color layer is arranged on the upper surface of the aluminum film, and the problem that the efficiency of the optical filter is low under the complex conditions of high temperature, poisonous and harmful gas and the like is solved by adding the aluminum film and the color layer.

The present invention discloses a wide-spectrum infrared transmission filter window that cuts off ultraviolet and visible light. The window substrate is a zinc selenide crystal, and a broadband cutoff film is designed on one side of the substrate. The main film system adopts a long-wave filter-type film structure, with zinc selenide and ytterbium fluoride as high and low refractive index materials, respectively. Two cutoff film stacks are used to achieve broadband cutoff, and matching layers are added at both ends of the main film system. The infrared band transmittance is improved by optimizing the matching layers; a wide-spectrum anti-reflection film is designed on the other side of the substrate. The optical thin film preparation process of the filter window adopts appropriate deposition temperature, deposition rate, and ion-assisted deposition processes. The window can prevent light in a wide band of 0.20μm to 0.80μm from passing through, and allows light in a wide band of 0.92μm to 15.50μm to pass through and reach the infrared detector response area through the subsequent optical path. The filter window of the present invention has stable performance and good reliability, and is suitable for spectral selection in infrared imaging systems.

The technical field of the application is a device for medical, oral or dental hygiene. The application discloses a hydrogel material and a preparation method and application thereof. The preparation method of the hydrogel material comprises: preparing a ZnSe / rGO heterojunction by a hydrothermal method through ZnSe and rGO, wherein the ZnSe is a semiconductor material zinc selenide, and the rGO is a conductor material reduced graphene oxide; and uniformly dispersing the ZnSe / rGO heterojunction in a GelMA matrix, and loading and fixing the ZnSe / rGO heterojunction on the GelMA to obtain a hydrogel material Z / r@G, wherein Z refers to ZnSe, r refers to rGO, and G refers to GelMA, and the GelMA is methacrylated gelatin. The application develops a preventive strategy capable of delaying or reducing cell aging, which can not only avoid the influence of excessive removal of aged cells on later bone repair, but also widely exert an anti-aging effect.

The invention discloses a room-temperature NO2 gas sensor based on a ZnSe-ZnS heterostructure and a preparation method thereof, and relates to the technical field of gas sensing, the room-temperature NO2 gas sensor comprises an Al2O3 substrate electrode and the ZnSe-ZnS heterostructure, and the ZnSe-ZnS heterostructure is coated on the Al2O3 substrate electrode to form the NO2 gas sensor; the ZnSe-ZnS heterostructure comprises a zinc selenide nanosheet substrate and zinc sulfide nanoparticles modified on the surface of the zinc selenide nanosheet substrate; according to the invention, ZnS nanoparticles are creatively adopted to modify ZnSe nanosheets to construct a heterostructure, and the design has the following advantages: firstly, the ZnS nanoparticles can effectively regulate and control electron distribution on the surface of ZnSe to form more active sites; secondly, energy band matching at a heterogeneous interface is beneficial to charge transfer, and the response sensitivity of the material to target gas is improved; and finally, the common agglomeration problem of the monatomic catalyst can be avoided through nano-particle modification, and the stability of the material is ensured.

This invention belongs to the field of infrared optical material processing and post-processing technology, and more specifically relates to a hot isostatic pressing (HIP) method for zinc selenide that balances optical and mechanical properties. The invention places a ZnSe bulk material prepared by chemical vapor deposition in a hot isostatic pressing furnace and performs non-equilibrium HIP treatment under an inert atmosphere to obtain zinc selenide with balanced optical and mechanical properties. The four-stage heat treatment mechanism with stepwise temperature and pressure response—"pressurizing first and then heating"—prevents brittle cold-pressing fracture, and "isostatic holding and cooling" blocks the elastic rebound of high-temperature healed pores in the early cooling stage, perfectly fixing the densified crystal lattice morphology and achieving the technical effect of balancing optical and mechanical properties.

The application provides a three-dimensional flower-shaped silicon@zinc selenide / cobalt selenide@carbon composite material and a preparation method thereof, a lithium ion battery silicon-based negative electrode and a battery. Compared with the prior art, the silicon particles are first prepared to grow in nanometer flower sheets, then the silicon particles are carbon-coated, and then the silicon particles are put into a tube furnace to be converted into the Si@ZnSe / CoSe@C composite material by using selenium powder. The flower-shaped structure can not only increase a large number of surface active sites but also effectively relieve the volume expansion of the silicon particles, so that the cycle stability of the battery is improved, and the battery obtains an extremely high specific capacity.

This invention discloses a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst: Step 1, a certain amount of ZnCl2, InCl3·4H2O and oleylamine are mixed and subjected to a first deoxygenation treatment. A mixed solution of 1-dodecanethiol and tert-dodecylmercaptan is rapidly injected under nitrogen conditions and reacted at a certain temperature for a certain time to obtain ultrathin zinc indium sulfide nanosheets. After centrifugation and washing, the nanosheets are redissolved in a certain amount of n-hexane. Step 2, zincacetate, oleic acid and 1-octadecene are mixed and subjected to a second deoxygenation treatment. The mixture is then heated to a certain temperature under nitrogen conditions, reacted for a certain time, and cooled. A certain amount of the solution obtained in step S1 is rapidly injected and subjected to a third deoxygenation treatment. The mixture is then heated under nitrogen conditions, and a certain amount of a mixed solution of Se and TOP is slowly injected at a certain rate. The mixture is then kept at a certain temperature and reacted for a certain time. After the injection process is completed, the reaction is allowed to continue. Finally, the solution is cooled to room temperature and centrifuged to obtain ZIS / ZnSeHNSs.

The present invention belongs to the field of catalyst technology, and particularly relates to a preparation method and application of a zinc selenide catalyst for electroreduction of CO2 to formic acid. A preparation method of a zinc selenide catalyst, wherein the raw materials include selenium powder and ZIF‑8; the mass ratio of selenium powder and ZIF‑8 is (0.15‑2.2): 1. When preparing a zinc selenide catalyst for electroreduction of CO2 to formic acid, the present invention adds selenium powder and ZIF‑8, and the mass ratio of selenium powder and ZIF‑8 is (0.15‑2.2): 1, and prepares a zinc selenide material by controlling the amount of reactants and the reaction temperature. The zinc selenide material has the ability to electrochemically reduce CO2 to formic acid, and the catalyst has a high faradaic efficiency and a large current density when electroreducing CO2 to formic acid. The faradaic efficiency exceeds 50%, and the faradaic efficiency even reaches 60.5% at a voltage of ‑1.2V vs.RHE, and the current density is 41.6mA cm ‑2 .

The application provides a kind of copper phosphide modified microspheres type zinc selenide photocatalytic material and its preparation method and application, zinc selenide is microspherical structure, copper phosphide nanoparticles are loaded on the surface of zinc selenide microspheres, and the molar ratio of copper phosphide and zinc selenide is 1:99-5:95.The method comprises preparing ZnSe microsphere precursor and Cu3P nanoparticles;Cu3P nanoparticles and ZnSe microsphere precursor are dispersed in ethanol, after stirring for a certain time, ultrasonic treatment is carried out, and a mixed solution I is obtained;After centrifugation, washing and separation treatment, vacuum drying is carried out for 10-14h, and Cu3P / ZnSe composite photocatalytic material is obtained.Cu3P nanoparticle promoter prepared by phosphatization is used to modify microspherical zinc selenide, to realize low-cost Cu3P as promoter to form high-performance photocatalyst, as efficient photocatalytic or photoelectrocatalytic water splitting hydrogen production catalyst, with very high practical value and application prospect.

The invention discloses a middle and far infrared optical film based on a potassium bromide film and a preparation method thereof, and relates to a far infrared band optical film technology. The anti-reflection film comprises a substrate, a front anti-reflection film system and a back anti-reflection film system, wherein the front anti-reflection film system is located on one side of the substrate, and the back anti-reflection film system is located on the other side of the substrate; the middle and far infrared optical film window is prepared by alternately depositing zinc selenide serving as a high-refractive-index film material and potassium bromide serving as a low-refractive-index film material. The middle and far infrared optical film based on the potassium bromide film provided by the invention can realize the anti-reflection of a wide spectrum with a far infrared band of 5-28 [mu] m, the average transmittance is 87.64%, and the highest value of the transmittance is 91.44%.