35 results about "Zinc selenide" patented technology

The invention belongs to the technical field of super capacitors, and particularly relates to a super capacitor electrode material and a preparation method thereof. Zinc selenide is tightly compounded on an MXene material to obtain the nano composite material, and the zinc selenide is obtained through in-situ conversion of a ZIF-7 precursor. The material realizes a point-line-surface three-dimensional conductive network in which ZnSe nanoparticles, in-situ derived carbon and MXene nanosheets are tightly coupled, has a high-defect carbon structure and an excellent electron conduction path, realizes ultrahigh specific capacitance, excellent rate capability and excellent long cycle stability, and greatly improves comprehensive electrochemical performance.

The application relates to the technical field of optical processing, and provides a zinc selenide aspheric lens and a numerical control polishing process thereof, which is carried out by using a numerical control polishing machine, comprises main steps of rough polishing, fine polishing, finishing and the like, and process parameters are adjusted according to the characteristics of zinc selenide, so that the zinc selenide aspheric lens with a diameter of less than 320 mm can be polished, the global surface type PV of the zinc selenide aspheric lens is controlled to be less than 0.3 microns by means of the numerical control polishing machine, white zinc metal particles generated due to heating of the lens surface in the polishing process are avoided, the surface smoothness of the finished product reaches 60 / 40, and the laser level is reached. The application also has reference significance for polishing the surface of zinc selenide with a diameter of more than 320 mm.

Provided are a design method and a preparation method of a ZnSe substrate 2-5.5 μm high-transmittance thin film. The design method of the ZnSe substrate 2-5.5 μm high-transmittance thin film comprises the following steps: Sa, a film system is designed with 550 nm as a reference wavelength for optical thin film design, and a film stack formula Sub / 0.6(LHL)^2MK / AIR is used, and the film system is plated on both surfaces of the substrate; wherein, Sub is a ZnSe substrate, and AIR represents air, and in the film stack expression: H represents a 1 / 4 wavelength thickness of a high-refractive-index material ZnSe (zinc selenide), L represents a 1 / 4 wavelength thickness of a low-refractive-index material YbF3 (ytterbium fluoride), K represents a 1 / 4 wavelength thickness of a protective layer material Al2O3 (aluminum oxide), and M represents a 1 / 4 wavelength thickness of a connecting layer material Y2O3 (yttrium oxide); Sb, a film layer structure of Sub / YbF3 / ZnSe / YbF3 / ZnSe / YbF3 / Y2O3 / Al2O3 / Air is generated through the input film stack formula; Sc, the film layer thickness is optimized through a thin film design software, and the best film layer thickness is obtained, and the transmittance of the optimized film layer structure reaches a target in a 2-5.5 μm wave band; and Sd, the optimized best film layer thickness is input into a control computer of a film plating machine.

The application relates to a preparation method of a multi-interface coupling indium phosphide quantum dot and an electroluminescent diode, and belongs to the field of semiconductor light emission, display and nanotechnology. In the application, tri (dimethylamino) phosphine is reacted with an indium halide oleylamine solvent at 160 DEG C to 200 DEG C to generate an indium phosphide nanocrystal core, then the temperature is increased to 300 DEG C to 350 DEG C, zinc oleate, tri-n-octylphosphine-selenium and tri-n-octylphosphine-sulfur are gradually injected, and a polar solvent and a crosslinking agent are injected; 3-5 quantum dots are high-temperature fused through interfaces to realize interface coupling, and a multi-interface coupling core-shell indium phosphide / zinc selenide / zinc sulfide quantum dot is obtained. The quantum dot has a unique coupling structure, can effectively inhibit photo-generated exciton Auger recombination, improve the charge transport performance of a quantum dot film, has higher stability and a higher fluorescence quantum yield, and can be used for preparing a high-efficiency electroluminescent diode with high tube efficiency and good working stability.

The application discloses an infrared large-view-field wide-spectrum multi-spectrum imaging spectrometer optical system, which is coaxially arranged in sequence from an object plane to a focal plane as a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a filter wheel; the first lens and the fourth lens are meniscus positive lenses, the second lens, the third lens and the fifth lens are meniscus negative lenses, and the sixth lens is a double-convex positive lens. The application adopts common chalcogenide and zinc selenide crystal infrared materials, corrects aberration and chromatic aberration by optimizing surface shape parameters of each surface and adopting aspheric surfaces, realizes high-quality imaging in a wide waveband range of 2.5-15 mu m, has the characteristics of large view field, small distortion, athermalization and super-long back intercept, is easy to produce and adjust, has strong versatility, and can be applied to the fields of monitoring of chemical harmful gases, environmental protection, agriculture and food safety, medical treatment and health and judicial identification.

The invention relates to the technical field of animal breeding biology, and discloses a boar semen cryopreservation solution which comprises a boar semen cryopreservation basic diluent, a cryoprotectant and zinc selenide nano-microspheres. The X-ray diffraction pattern of the zinc selenide nano-microsphere is matched with that of a standard card JCPDS37-1463, and the shape of the zinc selenide nano-microsphere is of a multi-level spherical structure with the surface assembled by nano-level particles. The concentration of the zinc selenide nano microspheres is 1 mmol / L. According to the invention, the zinc selenide nano-microsphere with a specific multi-stage spherical structure is applied to the field of cryopreservation of the boar semen for the first time, and the optimal working concentration of the zinc selenide nano-microsphere is determined through experiments. According to the technical scheme, the freezing oxidative stress is effectively relieved from multiple dimensions and multiple target points through the Zn-Se synergistic effect, the comprehensive quality of the frozen and thawed pig sperms is remarkably improved, and an efficient and stable new strategy with a wide application prospect is provided for optimizing the pig sperm freezing preservation technology.

The invention belongs to the technical field of nano material preparation and printing, and particularly relates to indium phosphide quantum dot ink as well as a preparation method and application thereof. According to the preparation method disclosed by the invention, the indium phosphide quantum dot core is firstly synthesized, and then the acrylic acid / polyacrylic acid / acrylate derivative ligand is used for carrying out surface treatment on the indium phosphide quantum dot, so that the surface passivation and stability improvement of the indium phosphide quantum dot and the optimization of the rheological property of the ink are synchronously realized, and the quantum efficiency is improved; the photoluminescence quantum yield is increased by 80% to 100% compared with that of similar InP / ZnSe quantum dots which are not treated by acrylic acid and the like. Indium phosphide / zinc selenide quantum dots treated by acrylic acid and the like are dispersed in an organic solvent to adjust the adaptive concentration to obtain the quantum dot ink, the ink does not need to be added with an additional rheology modifier or a film-forming polymer, the coffee ring effect can be effectively inhibited during drying, and preparation of high-resolution micro-patterns is achieved. The material can be directly used as a color conversion layer to be integrated with a blue micron light-emitting diode chip to form a display device.

The application discloses a preparation method of amorphous MOF derived ZIF and application thereof, and the preparation method comprises the following steps: preparing zinc nitrate hexahydrate and cobalt nitrate hexahydrate into solution A, preparing 2,5-dihydroxyterephthalic acid into solution B, carrying out a solvothermal reaction of solution A and solution B to obtain amorphous ZnCo-MOF powder; preparing the amorphous ZnCo-MOF powder into suspension C, dissolving 2-methylimidazole in an ethanol aqueous solution, adding triethylamine to form solution D, adding the suspension C into the solution D to react to obtain ZnCo-ZIF hollow nanosphere powder; placing the ZnCo-ZIF hollow nanosphere powder into argon for annealing treatment to obtain nitrogen-doped porous carbon hollow nanosphere material; uniformly mixing the nitrogen-doped porous carbon hollow nanosphere powder with selenium powder, and then placing the mixture into argon for annealing treatment to obtain zinc selenide / cobalt selenide@nitrogen-doped porous carbon hollow nanosphere material. The zinc selenide / cobalt selenide@nitrogen-doped porous carbon hollow nanosphere prepared by the method is mainly applied to preparation of a negative electrode material of a high-performance sodium ion battery.

The technical field of the application is a device for medical, oral or dental hygiene. The application discloses a hydrogel material and a preparation method and application thereof. The preparation method of the hydrogel material comprises: preparing a ZnSe / rGO heterojunction by a hydrothermal method through ZnSe and rGO, wherein the ZnSe is a semiconductor material zinc selenide, and the rGO is a conductor material reduced graphene oxide; and uniformly dispersing the ZnSe / rGO heterojunction in a GelMA matrix, and loading and fixing the ZnSe / rGO heterojunction on the GelMA to obtain a hydrogel material Z / r@G, wherein Z refers to ZnSe, r refers to rGO, and G refers to GelMA, and the GelMA is methacrylated gelatin. The application develops a preventive strategy capable of delaying or reducing cell aging, which can not only avoid the influence of excessive removal of aged cells on later bone repair, but also widely exert an anti-aging effect.

The invention discloses a room-temperature NO2 gas sensor based on a ZnSe-ZnS heterostructure and a preparation method thereof, and relates to the technical field of gas sensing, the room-temperature NO2 gas sensor comprises an Al2O3 substrate electrode and the ZnSe-ZnS heterostructure, and the ZnSe-ZnS heterostructure is coated on the Al2O3 substrate electrode to form the NO2 gas sensor; the ZnSe-ZnS heterostructure comprises a zinc selenide nanosheet substrate and zinc sulfide nanoparticles modified on the surface of the zinc selenide nanosheet substrate; according to the invention, ZnS nanoparticles are creatively adopted to modify ZnSe nanosheets to construct a heterostructure, and the design has the following advantages: firstly, the ZnS nanoparticles can effectively regulate and control electron distribution on the surface of ZnSe to form more active sites; secondly, energy band matching at a heterogeneous interface is beneficial to charge transfer, and the response sensitivity of the material to target gas is improved; and finally, the common agglomeration problem of the monatomic catalyst can be avoided through nano-particle modification, and the stability of the material is ensured.

This invention belongs to the field of infrared optical material processing and post-processing technology, and more specifically relates to a hot isostatic pressing (HIP) method for zinc selenide that balances optical and mechanical properties. The invention places a ZnSe bulk material prepared by chemical vapor deposition in a hot isostatic pressing furnace and performs non-equilibrium HIP treatment under an inert atmosphere to obtain zinc selenide with balanced optical and mechanical properties. The four-stage heat treatment mechanism with stepwise temperature and pressure response—"pressurizing first and then heating"—prevents brittle cold-pressing fracture, and "isostatic holding and cooling" blocks the elastic rebound of high-temperature healed pores in the early cooling stage, perfectly fixing the densified crystal lattice morphology and achieving the technical effect of balancing optical and mechanical properties.

The application provides a three-dimensional flower-shaped silicon@zinc selenide / cobalt selenide@carbon composite material and a preparation method thereof, a lithium ion battery silicon-based negative electrode and a battery. Compared with the prior art, the silicon particles are first prepared to grow in nanometer flower sheets, then the silicon particles are carbon-coated, and then the silicon particles are put into a tube furnace to be converted into the Si@ZnSe / CoSe@C composite material by using selenium powder. The flower-shaped structure can not only increase a large number of surface active sites but also effectively relieve the volume expansion of the silicon particles, so that the cycle stability of the battery is improved, and the battery obtains an extremely high specific capacity.

This invention discloses a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst: Step 1, a certain amount of ZnCl2, InCl3·4H2O and oleylamine are mixed and subjected to a first deoxygenation treatment. A mixed solution of 1-dodecanethiol and tert-dodecylmercaptan is rapidly injected under nitrogen conditions and reacted at a certain temperature for a certain time to obtain ultrathin zinc indium sulfide nanosheets. After centrifugation and washing, the nanosheets are redissolved in a certain amount of n-hexane. Step 2, zincacetate, oleic acid and 1-octadecene are mixed and subjected to a second deoxygenation treatment. The mixture is then heated to a certain temperature under nitrogen conditions, reacted for a certain time, and cooled. A certain amount of the solution obtained in step S1 is rapidly injected and subjected to a third deoxygenation treatment. The mixture is then heated under nitrogen conditions, and a certain amount of a mixed solution of Se and TOP is slowly injected at a certain rate. The mixture is then kept at a certain temperature and reacted for a certain time. After the injection process is completed, the reaction is allowed to continue. Finally, the solution is cooled to room temperature and centrifuged to obtain ZIS / ZnSeHNSs.

The invention discloses a middle and far infrared optical film based on a potassium bromide film and a preparation method thereof, and relates to a far infrared band optical film technology. The anti-reflection film comprises a substrate, a front anti-reflection film system and a back anti-reflection film system, wherein the front anti-reflection film system is located on one side of the substrate, and the back anti-reflection film system is located on the other side of the substrate; the middle and far infrared optical film window is prepared by alternately depositing zinc selenide serving as a high-refractive-index film material and potassium bromide serving as a low-refractive-index film material. The middle and far infrared optical film based on the potassium bromide film provided by the invention can realize the anti-reflection of a wide spectrum with a far infrared band of 5-28 [mu] m, the average transmittance is 87.64%, and the highest value of the transmittance is 91.44%.

The invention provides a broadband telecentric short wave infrared lens. The lens is composed of six lenses from an object side to an image side: a first lens which is a positive meniscus lens with a convex surface facing the object side and is made of chalcogenide glass; the second lens is a positive lens of which the convex surface faces the object side and is made of zinc selenide; the third lens is a negative lens of which the convex surface faces the object side and is made of chalcogenide glass; the fourth lens is a positive lens of which the convex surface faces the object side and is made of zinc selenide; the fifth lens is a thick negative lens with the convex surface facing the image space and is made of fused quartz; and the sixth lens is a thick positive lens with a convex surface facing the object side and is made of zinc selenide. According to the scheme of the invention, the broadband, small-F-number and telecentric targets are realized based on the combination of a small number of spherical lenses, and the optical processing and adjustment difficulty of the lens is reduced.

The application relates to a linear-method-based semiconductor laser, in particular to a high-efficiency all-solid-state mid-infrared 2-micron and 4-micron dual-wavelength continuous laser, which is used for solving the problem that although 2-micron waveband solid continuous laser output is obtained by utilizing a 1.15-micron laser to pump a holmium-doped crystal, and 4-micron waveband solid continuous laser output is obtained by utilizing a 3-micron waveband continuous laser to pump a zinc selenide crystal doped with iron, the laser can only obtain single-wavelength output of the 2-micron or 4-micron waveband. The high-efficiency all-solid-state mid-infrared 2-micron and 4-micron dual-wavelength continuous laser comprises a resonant cavity, a cryostat, a pumping laser, a collimating and focusing system and a laser gain medium; the application firstly proposes that high-power 1-micron waveband laser is utilized to pump a holmium-iron co-doped crystal to realize simultaneous output of 2-micron and 4-micron laser, and the 4-micron laser efficiency can be greatly improved while the 2-micron laser output is obtained.

The application belongs to the technical field of energy storage batteries, and discloses a preparation method of a zinc ion battery negative electrode. The steps include zinc sulfide foil, drying, setting a processing pattern, laser direct writing, heating and cooling. The negative electrode material prepared by the application is covered with a zinc sulfide layer and a zinc selenide layer, is highly stable in an aqueous electrolyte, and effectively avoids the occurrence of zinc negative electrode side reactions.

The invention belongs to the technical field of infrared optics, and discloses a medium-wave refrigeration athermalization infrared lens and a lens module. The lens is provided with three lenses with focal power, namely a first lens, a second lens and a third lens which are sequentially arranged on the same optical axis from an object side to an image side. The first lens is a positive meniscus lens of which the convex surface faces the object side, the second lens is a plano-concave lens of which the concave surface faces the object side, and the third lens is a biconvex lens; the image side surface of the first lens, the object side surface of the second lens and the object side surface of the third lens are aspheric surfaces; the object side surface of the third lens is a binary surface; the first lens and the third lens are made of chalcogenide glass, and the second lens is made of zinc selenide. The focal length of the lens is 25 mm, and the working wave band of the lens is 3.2 [mu] m-3. 5 [mu] m. The lens is simple in structure, only three lenses with focal power are adopted, and the number of the lenses is small; the lens is high in thermal stability and can meet the requirement of working temperature from-40 DEG C to 80 DEG C; the device is especially suitable for gas detection.

The invention belongs to the technical field of photocatalytic hydrogen evolution, and particularly relates to a method for synthesizing a zinc selenide / copper molybdenum sulfide photocatalyst by a solvothermal method. The preparation method comprises the following steps: firstly synthesizing necessary cuprous oxide, then synthesizing copper molybdenum sulfide by taking the cuprous oxide as a template, and finally synthesizing the zinc selenide / copper molybdenum sulfide heterojunction photocatalyst by taking the copper molybdenum sulfide as a cocatalyst. Compared with pure zinc selenide, the zinc selenide / copper molybdenum sulfide photocatalyst has richer hydrogen evolution active sites and lower hydrogen evolution overpotential; and the carrier separation efficiency of the zinc selenide / copper molybdenum sulfide photocatalyst is obviously superior to that of pure zinc selenide, so that the photocatalytic hydrogen evolution activity of the zinc selenide can be obviously improved by introducing copper molybdenum sulfide. Experimental results show that zinc selenide / 1wt% of copper molybdenum sulfide shows optimal hydrogen production performance, and the average hydrogen production rate is 4.14 times that of pure zinc selenide.

The utility model discloses a refrigeration medium wave infrared optical system based on a binary surface, and belongs to the technical field of infrared optical systems. The optical system comprises an outer optical system and six coaxial lenses installed in an optical-mechanical structure, the six lenses comprise a first lens made of silicon, a second lens made of zinc sulfide, a third lens made of germanium, a fourth lens made of silicon, a fifth lens made of germanium and a sixth lens made of zinc selenide which are sequentially arranged from the object space to the image space, the third lens is a plano-concave lens, and the fifth lens is a plano-concave lens. The sixth lens is a plano-convex lens, and the rest lenses are meniscus lenses; the two surfaces of the fifth lens are even-order aspheric surfaces, the surface, facing the image space, of the sixth lens is a binary surface, and the surfaces of the other lenses are standard surfaces. The maximum aperture of the optical system is 110mm, and the total length of the system is 180mm. The optical system provided by the utility model has the advantages of good imaging quality, high transmittance, no obvious stray light and compact structure, meets the requirements of various technical indexes, and realizes the comprehensive improvement of the comprehensive performance.

The present disclosure provides a method for treating surface defects of zinc selenide lenses, comprising the steps of: placing the polished zinc selenide lens in an ultrasonic cleaning basket in a pure water tank with a resistivity of ≥15 MΩ·cm, and the pure water level submerging the top of the lens; immediately placing the zinc selenide lens immersed in pure water into a citric acid cleaning solution, and wiping the surface of the lens with cotton; placing the wiped zinc selenide lens into AK191 cleaning agent, and wiping the surface of the lens with cotton; placing the wiped zinc selenide lens into an ultrasonic cleaning basket immersed in pure water with a resistivity of ≥15 MΩ·cm, and then placing the ultrasonic cleaning basket into a strong alkali stock solution for immersion; placing the ultrasonic cleaning basket with the zinc selenide lens immersed into flowing pure water with a resistivity of ≥15 MΩ·cm for rinsing; and cleaning and drying the ultrasonic cleaning basket with the zinc selenide lens according to the ultrasonic cleaning process after rinsing with pure water. The above method can solve the problems of scratches during wiping before coating and white marks after coating of the zinc selenide lens.

The invention discloses an optical system. The optical system comprises a low-distortion infrared lens and a detector for receiving an image formed by the low-distortion infrared lens. The effective focal length of the low-distortion infrared lens is 60 mm, the F number is 1.0, the low-distortion infrared lens is composed of a first lens, a second lens and a third lens which are sequentially arranged from the object side to the image side, the first lens is a meniscus positive lens with the convex face facing the object side, the second lens is a meniscus negative lens with the convex face facing the image side, and the third lens is a biconvex lens. The first lens and the third lens are made of chalcogenide glass, and the second lens is made of zinc selenide. When the temperature of the low-distortion infrared lens is 20 DEG C, the air interval between the first lens and the second lens is 10.986 mm, and the air interval between the second lens and the third lens is 24.186 mm. The low-distortion infrared lens is small in number of lenses, simple in structure and clear in imaging, temperature compensation can be achieved through cooperation of various optical materials with different characteristics and the lens arrangement structure, and the stability of the optical axis in the temperature changing process is ensured.

The application relates to the technical field of optical lenses, and particularly discloses a large-aperture long-wave athermal infrared lens, which comprises a first lens, a second lens, a third lens and a fourth lens; the first lens, the second lens, the third lens and the fourth lens are sequentially arranged along the light incidence direction and on the same optical axis; the first lens is a positive focal power meniscus lens; the second lens is a negative focal power meniscus lens; the third lens is a positive focal power meniscus lens; the fourth lens is a positive focal power meniscus lens; and the first lens, the second lens, the third lens and the fourth lens are all aspherical lenses; the application realizes optical passive athermalization in a wide temperature range without a mechanical focusing mechanism through specific focal power distribution and complementary combination of a chalcogenide glass and a zinc selenide material; the long-wave infrared diffraction limit is broken; the structure is compact, the weight is light, the cost is low, and the application can perfectly adapt to a new generation of high-performance infrared detectors.

A micro-OLED display includes a substrate with a coating made of IR-transparent material such as Zinc Selenide or Zinc Sulfide to allow a pupil tracking camera, which may include photodiodes, to be mounted directly behind the display. The coating is transparent to near infrared (NIR) radiation but opaque to visible light.

The preparation method of the zinc selenide 900-1700nm reflecting film system comprises the steps that S0, the surfaces of an accompanying plating sheet and a product are cleaned, the accompanying plating sheet and the product serve as lenses and are zinc selenide substrates, the accompanying plating sheet is a wafer with the same thickness and a wedge-shaped sheet, the first face of the wedge-shaped sheet is a polished plane, and the second face of the wedge-shaped sheet is a rough face; s1, putting into an oven for baking; s2, loading a tool clamp, and hanging the tool clamp into a vacuum coating machine; s3, vacuumizing and cleaning the Hall ion source; s4, sequentially plating on the first surface of the lens according to a film system Sub / 75nm YbF3 / 43.6 nm ZnSe / 212.29 nm YbF3 / 35.23 nm ZnSe / 92.65 nm YbF3 / 305.33 nm ZnSe / 33.23 nm YbF3 / 335.35 nm ZnS / 136.98 nm YbF3 / 10nm ZnS / 20nm Y2O3 / Air, the Sub is a zinc selenide substrate, the Air is air, and each film layer is assisted by an ion source; s5, after the first surface is plated with the film system, the cavity is cooled and taken out; and S6, the step S0 to the step S5 are repeated, the second face is plated with the same film system, and the wedge-shaped piece is not cleaned, not baked and not placed into a tool clamp.

The invention relates to the technical field of optical lenses, and particularly discloses a large-aperture long-wave athermalization infrared lens which comprises a first lens, a second lens, a third lens and a fourth lens which are sequentially arranged on the same optical axis in the light incidence direction. The first lens is a meniscus lens with positive focal power, the second lens is a meniscus lens with negative focal power, the third lens is a meniscus lens with positive focal power, the fourth lens is a meniscus lens with positive focal power, and the first lens, the second lens, the third lens and the fourth lens are all aspheric lenses; through specific focal power distribution and complementary combination of chalcogenide glass and a zinc selenide material, optical passive athermalization in a wide temperature range is realized without a mechanical focusing mechanism; the infrared detector breaks through the long-wave infrared diffraction limit, is compact in structure, is light in weight, is low in cost, and can be perfectly matched with a new-generation high-performance infrared detector.

A method for preparing a dual-band antireflection coating on a zinc selenide substrate includes the following steps: S1, cleaning the surfaces of the zinc selenide substrate (used as a lens) and the product; S2, placing the lens into a fixture, and then inserting the fixture into the cavity of a vacuum coating machine; S3, starting the vacuum coating machine, evacuating the vacuum, and cleaning the ion source; S4, maintaining the aforementioned vacuum level, depositing a first YF3 film layer on the first surface of the lens; S5, depositing a first ZnS film on the deposited first YF3 film layer. S6, deposit a second YF3 film on the deposited first ZnS film layer; S7, deposit a second ZnS film on the deposited second YF3 film layer; S8, deposit a third YF3 film on the deposited second ZnS film layer; S9, deposit a third ZnS film on the deposited third YF3 film layer; S10, after the deposition is completed, wait for the vacuum chamber to cool to below 60°C and take out the lens with the first deposited side; S11, repeat steps S1 to S10 to deposit the second side of the lens in sequence.

The invention discloses a preparation method of a nickel selenide-zinc selenide composite material for treating uranium-containing wastewater, and particularly relates to the field of photocatalytic materials. Comprising the following steps: S1, adding a nickel source, a zinc source and a selenium source into a reaction container, adding 30-60 mL of a solvent into the reaction container, stirring at room temperature for 10-30 min, and fully and uniformly mixing to obtain a first mixed solution; s2, adding 5-15 mL of an acidic solvent into the solution obtained in the step S1, and stirring for 5 min to obtain a second mixed solution; s3, carrying out heat preservation on the second mixed solution at 160-220 DEG C for 8-24 hours, and then cooling to room temperature to obtain a mixture; and S4, carrying out centrifugal treatment on the mixture obtained in the step S3, washing the centrifuged precipitate with deionized water and ethanol, and carrying out vacuum drying at 40-80 DEG C for 4-12 h to prepare the nickel selenide / zinc selenide composite photocatalyst. According to the technical scheme, the problem that an existing photocatalyst is low in uranium catalytic reduction capacity is solved, and the uranium treatment effect is improved.

The invention belongs to the technical field of infrared optical material preparation, and particularly relates to a device for preparing polycrystalline zinc selenide through pure solid feeding and a growth method, and the device comprises a furnace body, a main dust collection system and a secondary dust collection system; the furnace body, the main dust collection system and the secondary dust collection system are sequentially communicated in series through an air guide pipe, and pneumatic ball valves and butterfly valves are arranged on the air guide pipe at intervals; the furnace body comprises a water-cooling furnace body, a furnace body heat preservation cylinder, a heater, a first vacuum gauge, a thermocouple, a lower thermal field sleeve, an air inlet pipe and a graphite tower; the water-cooling furnace body comprises a water-cooling upper furnace cover and a water-cooling lower furnace cover, and the water-cooling upper furnace cover covers the water-cooling lower furnace cover to jointly form a closed cavity of the furnace body. Pure solid zinc and selenium are adopted as raw materials, hydrogen selenide highly toxic gas does not need to be used, and the risk of toxic gas leakage is reduced from the source; no hydrogen is generated in the production process, the occurrence probability of safety accidents is reduced, meanwhile, no hydrogen selenide cooling device needs to be additionally arranged, and the equipment structure is simplified.

The application discloses a mid-far infrared optical film based on potassium bromide film and a preparation method thereof, and relates to far infrared waveband optical film technology. The mid-far infrared optical film comprises a substrate, a front anti-reflection film system and a back anti-reflection film system. The front anti-reflection film system is located on one side of the substrate, and the back anti-reflection film system is located on the other side of the substrate. The mid-far infrared optical film window is prepared by alternately depositing zinc selenide as a high-refractive-index film material and potassium bromide as a low-refractive-index film material. The mid-far infrared optical film based on potassium bromide film provided by the application can realize wide-spectrum anti-reflection in the far infrared waveband of 5-28 microns, the average transmittance is 87.64%, and the highest transmittance is 91.44%.