78results about How to "High infrared transmittance" patented technology

The invention relates to a Y2O3-MgO nano-composite ceramic and a preparation method thereof. The Y2O3-MgO nano-composite ceramic is shown as xY2O3.(1-x)MgO, wherein x is the percentage of the mole number of Y2O3 to the total mole number of Y2O3 and MgO; the value of x is more than or equal to 0.01 and less than or equal to 0.99. The method comprises the following steps: preparing Y2O3-MgO nano-composite powder by adopting a sol-gel method; sintering the sieved composite powder by virtue of discharge plasma sintering or hot isostatic pressing sintering to obtain the infrared transparent Y2O3-MgO nano-composite ceramic.

A flat glass panel for use in applications requiring high visible and infrared transmittance (such as a solar panel) is made using lower cost batch materials containing iron oxide impurities. Iron oxide is known as an additive for decreasing infrared/visible transmittance of glass. Removal of iron oxide impurities from batch materials is very expensive. This invention uses common batch materials having iron oxide impurities to produce a glass with high transmittance by adding a clarifier comprised of 0.05 to 0.4 weight percent of manganese dioxide (MnO₂). The optional addition of vanadium pentoxide (V₂O₅) enhances ultraviolet blocking of the glass for protecting coatings within a solar panel from ultraviolet-induced damage.

In a multi-layer metal net grid electromagnetic shielding optical window employing femtosecond laser etching, a plurality of transparent dielectric plates etched with metal net grids are laminated, and a conductive metal net grid layer and a ferromagnetic metal net grid layer are etched on a surface of each transparent dielectric substrate from top to bottom. By a femtosecond laser direct-writingdeep-etching processing technology, metal net grid patterns such as lattices, round rings, diamonds and hexagonal shapes are etched on the surfaces of the transparent dielectric substrate coated withphotoresist, a layer of metal nickel or iron ferromagnetic metal thin film is plated on the etched substrate, a layer of gold or silver excellent conductive metal thin film is plated on the nickel layer, the conductive metal thin film is placed in an organic solvent to remove the photoresist and a metal part which is not needed to obtain a metal net grid. The fabricated metal net grid is difficultto scratch and fall off and is long in service lifetime. The ferromagnetic material and the conductive metal material are combined, a shielding effect can be developed at a wide band from a low-frequency electromagnetic band to a high-frequency electromagnetic band, and the multi-layer metal net grid electromagnetic shielding optical window has the characteristics of high electromagnetic shielding and high transmission of visible light and infrared light.

The invention discloses erbium neodymium ion co-doped tellurium fluoride glass for emitting 2.7 microns of intermediate infrared light. The glass comprises the following components in the range of mole percent: 55-65% of TeO2, 10-20% of GeO2, 0-20% of ZnO, 0-5% of Na2O, 0-20% of ZnF2, and 0-5% of NaF, and 0.5-1% of RE2O3, (RE is rare earth elements Er and Nd). The glass is prepared by a melting method of a corundum crucible and a silicon carbide rod electric furnace. The glass is transparent, not easy to devitrify, high in near infrared transmittance near 2708nm, and excellent in physical and chemical properties; the stability parameter delta T is greater than or equal to 140 DEG C; a strong 2.7 microns of intermediate infrared fluorescence can be obtained under pumping of a laser diode with 808nm of wavelength; and the glass is suitable for preparation and application of special glass doped with erbium ion for emitting 2.7 microns of intermediate infrared light and an optical fiber material.

The invention relates to a method of preparing gamma-La2S3 infrared transparent ceramic having a high infrared transmittance. The gamma-La2S3 infrared transparent ceramic which is in a cubic phase at a temperature ranging from room temperature to 1300 DEG C and is stable in structure can be prepared under conditions of a low preparing temperature, a low vacuum degree, low pressure and short temperature maintaining time. Technical problems that a liquid phase is difficult to generate, ceramic microstructure uniformity is poor and optical transmittance in the prior art is low are overcome. The gamma-La2S3 infrared transparent ceramic the average transmittance of which in a waveband of 8-14 [mu]m is not less than 50% can be prepared. Compared with the prior art, the prepared gamma-La2S3 hot-press infrared transparent ceramic has characteristics of good thermal stability, a simple process and the high infrared transmittance.

The invention provides a copper sulphide-doped cubic crystal zinc sulfide material and a preparation method thereof. According to the invention, a small amount of CuS is doped in ZnS, CuS is uniformly dispersed in ZnS particles, and the mass percentage of CuS is 0.02 to 1.0%. The infrared transmittance of the material is more than 85% in a wavelength range of 2.5 to 25 mu m (400 to 4000/cm); after the material is roasted at a temperature of 800 to 1000 DEG C for 1 to 2 h, the infrared transmittance of the material reaches 95% in a same range, and the crystal form of ZnS/CuS maintains unchanged after roasting. A nucleation/crystallization isolation method is used for preparation of the material, and the preparation method has the advantages of simple process, low cost and easily practicable reactions. CuS doped in the ZnS/CuS material is uniformly dispersed in the Zns particles, so an effect of stabilizing the crystal form of ZnS is produced, it is ensured that ZnS maintains a cubic phase crystal form after high temperature roasting, and infrared transmission performance of ZnS is not influenced.

The invention discloses a South Pole infrared telescope sealing window capable of preventing and removing frost and a manufacturing method thereof. An optical medium film system is arranged on a substrate of sealing window glass; the optical medium film system contains a transparent conductive film layer; the South Pole infrared telescope sealing window is characterized in that the transparent conductive film layer is divided into two layers, namely a planar transparent conductive film and a linear transparent conductive film; an insulating dielectric antireflective film layer is arranged between the planar transparent conductive film and the linear transparent conductive film; two electrodes are arranged on the edge of the upper surface of the transparent conductive film layer; the linear transparent conductive film and the planar transparent conductive film are connected in parallel. The invention is applicable to sealing window defrosting of a sealing window-type South Pole infrared telescope; the problem that the conventional transparent conductive film cannot be applied to an infrared spectral zone is solved; the infrared transmittance of the sealing window is improved to a great extent.

The invention discloses a preparation method of zinc selenide with high optical quality, which belongs to the technical field of inorganic block body material preparation. The method comprises the following steps: putting zinc into a deposition furnace; pumping the vacuum; raising the temperature in a deposition chamber; using argon as carrying gas of reaction raw material gas; introducing H2Se gas and the argon into the deposition chamber through a mass flowmeter (the mol ratio of zinc to H2Se is between 0.8 and 1.2, the deposition reaction is carried out on the inner wall of the deposition chamber, and the zinc selenide begins to grow); maintaining the unchanged mol ratio of zinc to H2Se and the constant pressure in the furnace; carrying out deposition for 15 to 25 days; and then, lowering the temperature to the room temperature to obtain the zinc selenide with high optical quality. The invention effectively solves the problem of powder generation in the process of preparing the zinc selenide through chemical vapor deposition, the impurities mixed in products are eliminated, the materials have high infrared transmission rate and low absorption factor, and the optical quality is greatly improved.

The embodiment of the invention discloses a radiation heat exchange board assembly which comprises a veneer and a heat exchange component and further comprises supporting pieces arranged between the veneer and the heat exchange component. A hollow layer is formed between the veneer and the heat exchange component through the supporting pieces, or a heat exchange base of the heat exchange component is of a box-type structure with a hollow layer. According to the radiation heat exchange board assembly, the hollow layer is formed between the veneer and the heat exchange component, or the hollow layer is directly formed in the heat exchange base of the heat exchange component. The hollow layer replaces a nonmetal heat conducting layer in the prior art, the infrared transmittance of the hollow layer is higher than that of a PVC crystal board, and the radiation heat exchange effect is more obvious; the PVC material is omitted, cost can be lowered, the mass can be reduced, and deformation cannot happen along with changing of temperature.

The invention discloses an infrared optical window with a double-sided anti-reflection structure, belonging to the technical field of infrared optical windows. The infrared optical window with the double-sided anti-reflection structure comprises an infrared optical window, wherein anti-reflection structures are etched on an incidence face and an exit face of the infrared optical window. By utilizing the structure, the transmissivity of the infrared window can be significantly increased, and the sensitivity of an infrared device can be improved. According to the infrared optical window disclosed by the invention, the average transmissivity measured in a wave band range of 8-14 um achieves 65 percent and is improved by 20 percent, wherein the maximum transmissivity achieves 73 percent.

The invention relates to intermediate infrared 2.7 mum luminous erbium ion-doped gallium germanium bismuthate glass. The molar percentage composition range of the glass is shown as follows: 43-48 percent of Bi2O3, 22-27 percent of GeO2, 17-23 percent of Ga2O3, 0-10 percent of MgO, 0-10 percent of Na2O and 0.2-3 percent of Er2O3. The glass is prepared by adopting a corundum crucible and silicon carbide rod electric furnace melting method. The glass has high infrared transmittance nearby intermediate infrared 2.7 mum and excellent physical and chemical property, and the stability parameter delta t is more than or equal to 160 DEG C; and strong intermediate infrared 2.7 mum fluorescent light can be obtained under the pumping of a laser diode with a wavelength of 980 nm. The glass is suitable for the preparation and the application of intermediate infrared 2.7 mum luminous erbium ion-doped heavy metal oxide glass and optical fiber materials.

The invention discloses a temperature-adjustable fabric based on a carbon nano tube and a preparing method of the fabric. The temperature-adjustable fabric comprises an inner structure layer and an outer structure layer. The inner structure layer comprises a carbon nano tube layer and a metal layer covering the carbon nano tube layer, and the infrared ray emitting rate of the metal layer is lowerthan that of the carbon nano tuber layer; the outer structure layer at least covers a first surface and a second surface of the inner structure layer, the first surface and the second surface are oppositely arranged in the thickness direction of the inner structure layer, and the outer structure layer has a pore structure and can allow infrared rays to pass through. The preparing method comprisesthe steps of depositing the metal layer on the surface of a carbon nano tube thin film to form the inner structure layer; at least covering the first surface and the second surface of the inner structure layer with the outer structure layer. According to the temperature-adjustable fabric, no other energy sources are consumed, the difference of the infrared emitting rates of the front and reverse directions of the inner structure layer is utilized, the temperature can be automatically adjusted according to the changes of the environment temperature, and meanwhile, the effect of heat preservation or cooling is achieved.

The invention discloses a high-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns. The glass comprises the following components by molar percent: 58-70% of TeO2, 15-25% of WO3, 0-15% of La2O3, 0-15% of LaF3 and 2-4% of Er2O3. The glass is prepared by adopting an electric furnace melting method of a corundum crucible and a silicon carbide rod. The glass is high in doping concentration of erbium ion, high in infrared transmittance near to the mid-infrared 2.7 microns and good in physicochemical properties; and the stability parameter delta T is not less than 180 DEG C. Strong mid-infrared 2.7 microns fluorescence is obtained under pumping of a laser diode with a wavelength of 980 nm; and the glass is suitable for preparation and application of erbium ion doped special glass and optical fiber materials capable of emitting light at mid-infrared 2.7 microns.

The invention discloses a window with an infrared transparent conductive function, and belongs to the field of infrared optical materials and the field of electronic materials. The invention aims to solve the technical problem that an existing window with an infrared transparent conductive function cannot give consideration to electromagnetic shielding and high infrared transmittance. The window with the infrared transparent conductive function is composed of a substrate, a transparent conductive layer and an infrared anti-reflection layer, wherein the transparent conductive layer and the infrared anti-reflection layer sequentially grow on the substrate. The transmittance of the window with the infrared transparent conductive function is not lower than 80% within the wavelength range of 0.78 mu m to 2.5 mu m; the transmittance is not lower than 75% within the wavelength range of 2.5-5 microns, the square resistance is not larger than 100 ohm/sq, and the shielding efficiency for 1GHz-18GHz electromagnetic waves is larger than 10dB. The preparation method is applied to preparation of the window with the infrared transparent conductive function.

The invention discloses an HJT battery and a preparation method thereof. The battery comprises an N-type silicon wafer, wherein intrinsic noncrystalline silicon layers are arranged on the illuminatedface and shady face of the N-type silicon wafer respectively; a P-type doped noncrystalline silicon layer and an N-type doped noncrystalline silicon layer are arranged on the intrinsic noncrystallinesilicon layers respectively; an IMO layer and an ITO layer are arranged on the P-type doped noncrystalline silicon layer in sequence; an ITO conducting film layer is arranged on the N-type doped noncrystalline silicon layer; and metal gate electrodes are arranged on the ITO layer and the ITO conducting film layer respectively. The preparation method comprises the following steps: carrying out texturing cleaning on the N-type silicon wafer; and carrying out deposition/preparation of the intrinsic noncrystalline silicon layers, the P-type doped noncrystalline silicon layer, the N-type doped noncrystalline silicon layer, the IMO layer, the ITO layer, the ITO conducting film layer and the metal gate electrodes. The HJT battery has excellent electrochemical performance, and has extremely important meanings for improving the application range of heterojunction batteries, and the preparation method has the advantages of simple technology, low volume production threshold, low preparation cost,high production efficiency and the like.

The invention belongs to the technical field of infrared optical thin films and particularly relates to novel transitional metal Zr and Hf nitride optical thin films, use thereof and a preparation method thereof. The infrared window protective film material consists of transitional metal Zr and Hf nitrides and can be expressed as (Zr, Hf)Nx, wherein x represents the nitrogen content; and the value of the x ranges from 1.0 to 1.5. The material is particularly suitable to be used for manufacturing far-infrared band ZnS and ZnSe infrared window protective films which have high transmissivity, high hardness and low internal stress. The films can be made by various methods such as physical gas-phase deposition or chemical gas-phase deposition and have a promising prospect.

An infrared transmission photosensitive resin composition includes (A) a pigment dispersion composition including a coloring agent (a1); (B) an alkaline soluble resin; (C) a photo-polymerizable compound; (D) a photo-polymerization initiator; and (E) a solvent, wherein the coloring agent (a1) includes a blue pigment, a red pigment and a yellow pigment. Thereby, the infrared transmission photosensitive resin composition may form an infrared transmission pixel which exhibits a high transmittance in an infrared region while having a very low transmittance in a visible light region, so as to be used in an image sensor for obtaining an image having excellent image quality at a place where the quantity of light is insufficient.

The invention discloses an intelligent B-pillar trim panel assembly of an automobile and an identity recognition method. The intelligent B-pillar trim panel assembly comprises an infrared recognitionmodule, a base, a trim panel body which is used for being connected with a B pillar and has high infrared transmittance, and a hidden layer which is matched with the trim panel body and has high infrared transmittance; the hidden layer and the base are sequentially arranged on one side of the trim panel body so that the hidden layer can cover the base; and the infrared recognition module is arranged on the side, facing the trim panel body, of the base and electrically connected with a BCM of the automobile. According to the intelligent B-pillar trim panel assembly of the automobile and the identity recognition method, the appearance integration of the B-pillar trim panel assembly of the automobile is achieved, and the B-pillar trim panel assembly has functionality.

The invention discloses a hollow-core composite glass optical fiber and a preparation method thereof. The cladding of the hollow-core composite glass optical fiber is phosphate glass. The fiber core is composed of a thin high-refractive-index sulfur-based semiconductor layer and a central air hole. The optical fiber consists sequentially from the outer layer to the inner layer of the phosphate glass cladding, the sulfur-based semiconductor layer and the air hole. The hollow-core composite glass optical fiber of the invention has the characteristics of being high in infrared transmittance, large in non-linear coefficient, large in photoconductivity, capable of producing a mid-infrared supercontinuum, and low in loss in the mid- and far-infrared, and stably supports vortex optical transmission. The preparation method of the invention fully utilizes the wettability of the phosphate glass and the sulfur-based semiconductor fiber core material, and obtains the hollow-core composite glass optical fiber by hot-melting the sulfur-based semiconductor core material in the non-through hole in the phosphate glass under high temperature conditions to spontaneously form a ring-shaped fiber coreand, then, using a simple traditional drawing method.

The invention provides a preparation method of a ZnS polycrystal. The preparation method comprises the following steps: putting zinc sulfide into a tubular heating furnace; after introducing hydrogensulfide for 20min to 30min, raising the temperature; after raising the temperature to first temperature of 500 DEG C to 600 DEG C, keeping heat for 2h to 4h; after raising the temperature to the firsttemperature, adjusting an introducing speed; then cooling to obtain pre-treated zinc sulfide, wherein the ratio of the mass of the zinc sulfide to the introducing starting speed of the hydrogen sulfide to the adjusted introducing speed of the hydrogen sulfide is (0.0001kg to 15kg) to (1.5L/min to 2.3L/min) to (0.5L/min to 1L/min); mixing the pre-treated zinc sulfide and Al2S3 according to the mass ratio of 100 to (0.3 to 0.8) to obtain a mixture; after pre-pressing the mixture to 50MPa to 55MPa, vacuumizing; after raising the vacuum degree to 4Pa to 10Pa and raising the temperature to secondtemprature of 800 DEG C to 1000 DEG C, keeping the heat for 6h to 8h; after raising the temperature to the second temprature for 3h to 5h, pressurizing to 70MPa to 90MPa; keeping the pressure until the temperature is 10 DEG C to 40 DEG C to obtain the ZnS polycrystal.