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Infrared transparent conductive film and preparation method thereof

A transparent conductive thin film and thin film technology, applied in the field of material science, can solve the problems of not being able to significantly improve the optical performance and anti-electromagnetic interference performance of infrared detector window/hood materials

Inactive Publication Date: 2010-06-23
NANTONG ZHONGLING INSULATION MATERIALS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the optical performance and anti-electromagnetic interference performance of the infrared detector window / hood material cannot be significantly improved

Method used

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  • Infrared transparent conductive film and preparation method thereof
  • Infrared transparent conductive film and preparation method thereof
  • Infrared transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The technical solution described in this embodiment is that a Cu thin film and a CuAlO thin film are sequentially covered on a sapphire substrate. The Cu thin film has a thickness of 300 nm and a refractive index of 1.07; the CuAlO thin film has a thickness of 170 nm and a refractive index of 1.70.

[0019] The concrete preparation process of this embodiment is:

[0020] Step 1, using radio frequency magnetron sputtering method to deposit Cu thin film on sapphire substrate; the deposition process conditions are: sputtering power is 90W, Ar gas flow rate is 17.0SCCM, substrate temperature is 150°C, target base distance is 6.2 cm, the sputtering pressure is 0.5Pa, and the deposition time is 2.5h.

[0021] Step 2, annealing the sapphire with the Cu thin film deposited on the surface; the annealing process conditions are: the annealing temperature is 450°C, the annealing protective atmosphere is Ar gas, and the annealing time is 0.6h.

[0022] Step 3, using radio frequenc...

Embodiment 2

[0025] The technical solution described in this embodiment is that a Cu thin film and a CuAlO thin film are sequentially covered on a sapphire substrate. The Cu thin film has a thickness of 330 nm and a refractive index of 1.10; the CuAlO thin film has a thickness of 140 nm and a refractive index of 1.80.

[0026] The concrete preparation process of this embodiment is:

[0027] Step 1, using radio frequency magnetron sputtering method to deposit Cu thin film on sapphire substrate; the process conditions of deposition are: sputtering power is 80W, Ar gas flow rate is 19.0SCCM, substrate temperature is 200°C, target base distance is 6.5 cm, the sputtering pressure is 0.4Pa, and the deposition time is 3.0h.

[0028] Step 2, annealing the sapphire with the Cu thin film deposited on the surface; the annealing process conditions are: the annealing temperature is 500°C, the annealing protective atmosphere is Ar gas, and the annealing time is 0.5h.

[0029] Step 3, using radio frequ...

Embodiment 3

[0032] The technical solution described in this embodiment is that a Cu thin film and a CuAlO thin film are sequentially covered on a sapphire substrate. The Cu thin film has a thickness of 360 nm and a refractive index of 1.11; the CuAlO thin film has a thickness of 110 nm and a refractive index of 1.85.

[0033] The concrete preparation process of this embodiment is:

[0034] Step 1. Deposit a Cu thin film on a sapphire substrate by radio frequency magnetron sputtering; the deposition process conditions are: sputtering power is 73W, Ar gas flow is 21.0SCCM, substrate temperature is 240°C, and target base distance is 6.7 cm, the sputtering pressure is 0.3Pa, and the deposition time is 3.3h.

[0035]Step 2, annealing the sapphire with the Cu film deposited on the surface; the annealing process conditions are: the annealing temperature is 550°C, the annealing protective atmosphere is Ar gas, and the annealing time is 0.5h.

[0036] Step 3, using radio frequency magnetron sput...

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Abstract

The invention discloses an infrared transparent conductive film and a preparation method thereof. The infrared transparent conductive film is prepared by covering Cu film and CuAlO film on sapphire substrate in turn. The thickness of the Cu film is 300-360nm, the refractive index is 1.07-1.13; and the thickness of the CuAlO film is 100-170nm and the refractive index is 1.70-2.00. During preparation, the radio frequency magnetron sputtering method is used to deposit Cu film on sapphire substrate, then annealing is performed, then the radio frequency magnetron sputtering method is used again to deposit CuAlO film on the sapphire with Cu film and then the annealing is performed. The prepared infrared transparent conductive Cu / CuAlO film of the invention has good infrared transmitting performance and conductivity, and can be used for improving the optical property and anti-electromagnetic interference performance of the infrared detector window / hood material.

Description

technical field [0001] The invention relates to the field of material science, in particular to an infrared transparent conductive film and a preparation method thereof. Background technique [0002] At present, infrared detection and guidance technology has been applied to almost all kinds of military combat platforms. The infrared detector window / hood separates the infrared sensing / imaging system from the external environment and protects the system. Materials that can be used as detector windows / hoods in the 3-5um mid-wave infrared band include yttrium oxide, spinel, aluminum oxynitride, sapphire, etc. The development of modern military and space technology requires that the infrared detector window / hood material should not only be able to withstand the impact of high temperature, high pressure, thermal shock, free dust and hail in the atmosphere, but also have the performance of anti-electromagnetic interference. However, these infrared detector window / hood materials a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00C23C14/35C23C14/58
Inventor 冯丽萍刘正堂李阳平
Owner NANTONG ZHONGLING INSULATION MATERIALS
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