194 results about "Aluminum oxynitride" patented technology

A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxynitride or aluminum oxynitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR₁R₂)(NR₃R₄)(NR₅R₆); where each of R₁, R₂, R₃, R₄, R₅ and R₆ is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R₁-R₆ groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.

A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.

Nanoparticles of amorphous aluminum oxynitride or silicon oxynitride having a very high aspect ratio are used to fill polymeric materials to provide products that have an extremely low WVTR/OTR. Such products are particularly effective for incorporation into organic light-emitting devices or the like which are susceptible to degradation from moisture and/or oxygen. Pressure sensitive and/or thermosetting adhesives filled with such particles create excellent sealants. Polymeric sheets or films made from resin in which these nanoparticles are dispersed, or intimately associated with, before extrusion exhibit very low WVTR/OTR.

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.

A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80nm and at most 1000nm. Here, the thickness of the first coat film is preferably at least 6nm and at most 200nm.

Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

The invention concerns glass panels comprising thin layers in particular for providing them with solar protective or low-emissive properties, and also comprising other thin layers for correcting rainbow effects induced by the former. The invention is characterized in that said glass panels comprise a glass substrate coated with an aluminum oxynitride layer, deposited by gas phase pyrolysis, and whereof the characteristics of thickness and refractive index are selected so as to attenuate colors reflected by the layer providing the glass panel with low-emissive and/or solar protective properties, layer which is deposited on the aluminum oxynitride layer.

A transparent aluminum oxynitride product is produced by a first heat treating step wherein a combination of Al₂O₃ and AlN at a temperature within the solid-liquid phase and a second step of sintering the heat treated combination at a temperature at least 50° C. less than the heat treating temperature. The method introduces a small fraction of liquid that aids in pore elimination and densification. In a single step, the material is shifted from the liquid/solid region into a solid AlON solution region, wherein the liquid is fully reacted with the solid AlON phase, with further sintering occurring. The procedure is sufficient to eliminate voids and other imperfections which often result in a reduction in optical clarity.

A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlO_xN_y or Me_zAlO_xN_y where Me_z symbolizes Ti_z, Si_z or Cr_z and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein

• • the aluminum oxynitride layer has a threading dislocation density of 6.3×10⁷/cm² or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.

This invention pertains to a composite of AlON and a germanate glass, and to a process for bonding AlON to the glass. The composite includes AlON and glass bonded together and having transmission in the visible and mid-infrared wavelength region. The process includes the step of heating them together above the softening temperature of the glass, the composite having excellent, i.e., typically in excess of about 60%, transmission in the 0.4-5 wavelength region.

The invention relates to a method for preparing an aluminum oxynitride transparent ceramic through gel casting. The method comprises the following steps: (1) ball-milling and mixing aluminum oxynitride powder, a dispersing agent and absolute ethyl alcohol, adding a hydration-resisting agent, performing hydration-resisting treatment, drying and sieving to obtain aluminum oxynitride powder processed by the hydration-resisting treatment, wherein the mass ratio of the aluminum oxynitride powder, the dispersing agent and the hydration-resisting agent is 100:(0.1-5):(0.1-5); (2) mixing the aluminum oxynitride powder processed by the hydration-resisting treatment, a water-soluble isobutene polymer and water to obtain a water-base slurry, wherein the mass ratio of the aluminum oxynitride powder processed by the hydration-resisting treatment, the water-soluble isobutene polymer and the water is (10-80):(0.1-5):100; (3) performing vacuum degassing on the base-base slurry, injecting the degassed base-base slurry into a mold, performing self-gel curing to obtain a biscuit, and drying the biscuit; (4) presintering the dried biscuit, and performing pressure-less sintering to obtain the aluminum oxynitride transparent ceramic.

The invention discloses a method for preparing aluminum oxynitride transparent ceramic. The method comprises the following steps: performing ball-milling mixing of aluminum oxide powder, aluminum nitride powder and a sintering aid, and then drying and sieving to obtain mixed powder; putting the mixed powder in a graphite mould; spark plasma sintering: putting the prepared mould in a SPS sintering furnace and sintering quickly; putting AlON ceramic in a graphite sintering furnace; preserving heat for 2-4 hours at sintering temperature of 1,650-1,800 DEG C in a nitrogen atmosphere; removing carbon permeating in SPS to further improve the transmittance of AlON. According to the method disclosed by the invention, AlON transparent ceramic with high transmittance is obtained when the sintering temperature is lower than that of a common pressureless sintering technology.

A process for fast preparing the transparent gamma-aluminum oxynitride ceramic powder includes such steps as proportionally mixing aluminum nitride powder with alpha-Al2O3 powder, drying, loading it into a graphite reactor containing N2 or N contained gas mixture, high-current heating to 1600-1850 deg.C at 50-500 deg.C/min, holding the temp for 0-60 min, and grinding.

The invention discloses a refractory castable material special for tertiary air duct gates, comprising the following components according to the weight percentage: 70-75% of mullite M70, 5-10% of aluminum oxynitride (AlON), 6-7% of pure calcium aluminate cement, 3-4% of a-Al2O3, 3-5% of silica fume and 5-7% of water. During preparation, dodecacalcium heptaluminate (C12A7) with mass being 2% of the total mass of the mixed six components is additionally added. The refractory castable material special for tertiary air duct gates of the invention has extremely high wear-resisting property and thermal shock resistance. By adding AlON nano fine powder as an antioxidant, high thermal resistance and high temperature resistance to chemical erosion of products are improved; by increasing low temperature oxide of sodium oxide and reducing the sintering temperature of the castable material, the strength and wear-resisting property of products are improved; by adding C12A7 to adjust stripping time of the castable material, different requirements on the construction time and customers are met.

The invention relates to a solar control glass panel comprising, on at least one of the surfaces of a glass substrate, a multilayer stack including at least one solar radiation absorption layer, and dielectric coatings surrounding said solar radiation absorption layer. According to the invention, the solar radiation absorption layer is a metal alloy layer made from zirconium and chromium. The multilayer stack includes, between the substrate and the solar radiation absorption layer, as well as on top of the solar radiation absorption layer, at least one coating made of a dielectric material made from a compound selected from among silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, mixed aluminum/silicon nitrides, silicon oxynitride, and aluminum oxynitride. The invention is particularly useful as a motor vehicle glass panel, particularly for the roof, as a building glass panel, or as a household stove door.