14 results about "Polycrystalline aluminum" patented technology

The invention provides a metal matrix composite microstructure strengthening simulation method and system, and relates to the technical field of composite mechanical property simulation, and the method comprises the following steps: establishing a polycrystalline aluminum matrix atomic model and a spherical silicon nitride particle strengthening phase atomic model unit; embedding the spherical silicon nitride particles into the polycrystalline aluminum matrix according to the target embedding position coordinates, and integrating to generate an atomic scale structure model; according to the method, an embedded atom potential function is adopted to describe interaction among atoms in a polycrystalline aluminum matrix, a Tersoft potential function is adopted to describe covalent bond interaction among atoms in spherical silicon nitride particles, and a Lennard-Jones potential function is adopted to describe interaction among heteroatoms at a Si3N4 / Al interface; based on the interaction potential between atoms, molecular dynamics simulation is adopted for conducting uniaxial stretching simulation on the atomic scale structure model, mechanical property parameters of the particle reinforced metal matrix composite are obtained through calculation, and a visualization method is combined for analyzing the microcosmic strengthening mechanism of the particle reinforced metal matrix composite.

The invention relates to a vacuum ultraviolet detector based on aluminum nitride and a preparation method thereof. The vacuum ultraviolet detector comprises a bottom electrode, a substrate, an aluminum nitride layer, a two-dimensional semiconductor material layer and a top electrode, the bottom electrode is arranged below the substrate, the aluminum nitride layer is arranged above the substrate, the bottom end of the two-dimensional semiconductor material layer is connected with the aluminum nitride layer, and the top end of the two-dimensional semiconductor material layer is connected with the top electrode; the aluminum nitride layer is formed by depositing an amorphous or polycrystalline aluminum nitride film on the upper surface of the substrate through a magnetron sputtering method or depositing a single crystal aluminum nitride film on the upper surface of the substrate through an atomic layer deposition method or a physical vapor transport method. Compared with the prior art, the p-Si / n-AlN / p-2DMs vacuum ultraviolet detector constructed by the invention can be used for detecting laser with wide spectral wavelength and obtaining extremely fast transient response current in a VUV wave band.

The invention discloses an aluminum nitride composite substrate, a preparation method thereof and a semiconductor device. The preparation method comprises the following steps: sequentially forming a sacrificial layer and an aluminum nitride epitaxial layer on a heterogeneous substrate; temporarily bonding a supporting substrate on the aluminum nitride epitaxial layer through bonding glue to obtain a first bonding structure; dissociating the sacrificial layer to separate the heterogeneous substrate of the first bonding structure from the aluminum nitride epitaxial layer to obtain a second bonding structure exposing a first separation surface of the aluminum nitride epitaxial layer; bonding a polycrystalline aluminum nitride ceramic substrate on the first separation surface of the aluminum nitride epitaxial layer to obtain a third bonding structure; dissociating the bonding glue to separate the supporting substrate and the aluminum nitride epitaxial layer in the third bonding structure to obtain a fourth bonding structure exposing a second separation surface of the aluminum nitride epitaxial layer; and growing an aluminum nitride single crystal wafer on the second separation surface of the aluminum nitride epitaxial layer to obtain the aluminum nitride composite substrate. By adopting the scheme, the high-quality aluminum nitride composite substrate can be prepared.

This method comprises the steps: a) using a substrate (1) comprising a surface film (2) made of a dichalcogenide of a transition metal, denoted MX2, where “M” denotes a transition metal and “X” denotes a chalcogen; the surface film (2) comprising a set of monolayers linked together by van der Waals bonds; b) forming a film (3) of polycrystalline aluminum nitride AlN, having grain boundaries, on the surface film (2); c) diffusing metallic elements (E) into the surface film (2), through the grain boundaries of the film (3) of polycrystalline aluminum nitride AlN, the metallic elements (E) being chosen to react chemically with MX2 by an oxidation-reduction reaction so as to transform the van der Waals bonds into covalent bonds; d) forming a crystalline layer on the polycrystalline aluminum nitride AlN film (3) after step c).

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

The invention relates to a measuring device for absorption-spectroscopic gas measurement, the use of spinel, polycrystalline aluminum oxide or aluminum oxynitride and a method for absorption-spectroscopic gas measurement.

A method for preparing an AlN substrate includes: (A) providing a surface-polished polycrystalline aluminum nitride (AlN) substrate; (B) forming a first AlN film via reactive sputtering using magnetron sputtering with an aluminum target, nitrogen, and argon gases to fill surface lattice defect pores; (C) removing the first AlN film by thinning and polishing, leaving filled pore areas to form a planar AlN substrate; (D) sintering the planar substrate at high temperature to enhance adhesion; (E) forming a second AlN film on the sintered AlN substrate; (F) removing the second AlN film by thinning and polishing to achieve a final AlN substrate with high thermal conductivity and low surface pore sizes.

The application provides an aluminum nitride film, which comprises polycrystalline aluminum nitride; the polycrystalline aluminum nitride is doped with 6.5-7.5 at.% tantalum; the crystal face orientation of the polycrystalline aluminum nitride is (002); and the c value in the cell parameter of the polycrystalline aluminum nitride is 0.512 nm. The application further provides a preparation method of the aluminum nitride film, which specifically comprises the following steps: at normal temperature, magnetron sputtering is performed on a substrate by using an AlTa alloy target under a mixed gas atmosphere of inert gas and nitrogen, so as to obtain the aluminum nitride film. The application further provides an application of the aluminum nitride film in the field of thin film bulk acoustic resonators.

The invention discloses a metal organic framework membrane capable of efficiently separating carbon dioxide as well as a preparation method and application of the metal organic framework membrane, and belongs to the technical field of membrane separation. According to the membrane material, Al < 3 + > serves as a central metal node, dicarboxylic acid serves as a ligand, and efficient screening of carbon dioxide / methane is achieved by constructing a polycrystalline aluminum-based metal organic framework membrane of an angstrom-scale hole window structure. The preparation method comprises the following steps: adopting a strategy of inducing secondary solvothermal growth by a low-crystalline nanocrystalline seed, modifying the nanocrystalline seed to the surface of a support body through a dip-coating method, and then self-assembling in a synthetic solution to form a compact defect-free polycrystalline film. When the membrane is used for separating equimolar carbon dioxide / methane mixed gas, the carbon dioxide / methane selectivity is up to 185, the methane loss rate is lower than 0.2%, and the membrane has the characteristics of high permeation rate and low methane escape. The excellent stability and separation performance can be applied to the fields of natural gas decarburization, biogas purification and industrial carbon capture.

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

To provide a method for producing an aluminum nitride substrate having a small surface pore diameter and high thermal conductivity.SOLUTION: A method for manufacturing a polycrystalline aluminum nitride substrate includes: a step (A) of providing a polycrystalline aluminum nitride substrate whose surface is to be polished, causing a plasma formed of nitrogen and argon to act on a first layer aluminum nitride film generated by reaction on the surface of the substrate by a magnetron sputtering apparatus, and filling a gap of a hole generated due to a defect of a crystal lattice on the surface of the substrate; a step (B) of removing the first layer aluminum nitride film on the substrate by a flattening method to leave a filling portion in the hole; a step (C) of sintering the substrate, the surface of which has been flattened, at a high temperature to enhance the adhesion density between the aluminum nitride film in the gap and the substrate; a step (D) of subjecting the substrate, the sintering of which has been completed, to hole-filling sputtering of a second layer aluminum nitride film at a slow sputtering rate; and a step (C) of removing the second layer aluminum nitride film on the substrate by a flattening method to form a second layer aluminum nitride film on the substrate. (E) leaving the filling portion in the hole to complete the manufacture of the substrate.SELECTED DRAWING: Figure 1

The invention provides a preparation method of a polycrystalline aluminum oxide pipe composite structure. The preparation method comprises the steps that a polycrystalline aluminum oxide main pipe layer is sintered and formed, the outer surface of the polycrystalline aluminum oxide main pipe layer is roughened, and a rough attachment surface is formed; preparing a transition layer containing a stepped tooth and stepped groove structure on the outer side of the polycrystalline aluminum oxide main pipe layer; a connecting layer is prepared on the transition layer, and punching positions corresponding to the stepped grooves are marked; a punching position is selected according to the connecting position, a surface hole is machined, and the surface hole goes deep into the stepped groove; and installing a metal riveting piece on the selected surface hole. The method has the advantages of mature and easy-to-implement preparation process, simple device structure, firm connection, stable arrangement of the metal riveting piece, light and thin overall device structure and the like.

This method comprises the steps: a) using a substrate (1) comprising a surface film (2) made of a dichalcogenide of a transition metal, denoted MX2, where “M” denotes a transition metal and “X” denotes a chalcogen; the surface film (2) comprising a set of monolayers linked together by van der Waals bonds; b) forming a film (3) of polycrystalline aluminum nitride AlN, having grain boundaries, on the surface film (2); c) diffusing metallic elements (E) into the surface film (2), through the grain boundaries of the film (3) of polycrystalline aluminum nitride AlN, the metallic elements (E) being chosen to react chemically with MX2 by an oxidation-reduction reaction so as to transform the van der Waals bonds into covalent bonds; d) forming a crystalline layer on the polycrystalline aluminum nitride AlN film (3) after step c). Figure 7