2 results about "Polycrystalline aluminum" patented technology

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

To provide a method for producing an aluminum nitride substrate having a small surface pore diameter and high thermal conductivity.SOLUTION: A method for manufacturing a polycrystalline aluminum nitride substrate includes: a step (A) of providing a polycrystalline aluminum nitride substrate whose surface is to be polished, causing a plasma formed of nitrogen and argon to act on a first layer aluminum nitride film generated by reaction on the surface of the substrate by a magnetron sputtering apparatus, and filling a gap of a hole generated due to a defect of a crystal lattice on the surface of the substrate; a step (B) of removing the first layer aluminum nitride film on the substrate by a flattening method to leave a filling portion in the hole; a step (C) of sintering the substrate, the surface of which has been flattened, at a high temperature to enhance the adhesion density between the aluminum nitride film in the gap and the substrate; a step (D) of subjecting the substrate, the sintering of which has been completed, to hole-filling sputtering of a second layer aluminum nitride film at a slow sputtering rate; and a step (C) of removing the second layer aluminum nitride film on the substrate by a flattening method to form a second layer aluminum nitride film on the substrate. (E) leaving the filling portion in the hole to complete the manufacture of the substrate.SELECTED DRAWING: Figure 1